公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
2015 | The ?3 กั 10 20 cm -3 Electron Concentration and Low Specific Contact Resistivity of Phosphorus-Doped Ge on Si by In-Situ Chemical Vapor Deposition Doping and Laser Annealing | CHEE-WEE LIU ; Huang, S.-H.; Lu, F.-L.; Huang, W.-L.; Huang, C.-H.; CHEE-WEE LIU | IEEE Electron Device Letters | | | |
2019 | First Vertically Stacked, Compressively Strained, and Triangular Ge<inf>0.91</inf>Sn<inf>0.09</inf> pGAAFETs with High ION of 19.3£gA at VOV=VDS=-0.5V, Gm of 50.2£gS at VDS=-0.5V and Low SSlin of 84mV/dec by CVD Epitaxy and Orientation Dependent Etching | CHEE-WEE LIU ; Huang, Y.-S.; Ye, H.-Y.; Lu, F.-L.; Liu, Y.-C.; Tu, C.-T.; Lin, C.-Y.; Lin, S.-H.-Y.; Jan, S.-R.; CHEE-WEE LIU | Digest of Technical Papers - Symposium on VLSI Technology | | | |
2020 | Infrared Response of Stacked GeSn Transistors | CHEE-WEE LIU ; Liu, H.-H.; Huang, Y.-S.; Lu, F.-L.; Ye, H.-Y.; Liu, C.W.; CHEE-WEE LIU | 2020 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2020 | | | |
2016 | Low contact resistivity (1.5×10-8 Ω-cm2) of phosphorus-doped Ge by in-situ chemical vapor deposition doping and laser annealing | CHEE-WEE LIU ; Huang, S.-H.; Lu, F.-L.; CHEE-WEE LIU | 2016 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2016 | | | |
2020 | Low Contact Resistivity to Ge Using In-Situ B and Sn Incorporation by Chemical Vapor Deposition | CHEE-WEE LIU ; Tsai, C.-E.; Lu, F.-L.; Liu, Y.-C.; Ye, H.-Y.; CHEE-WEE LIU | IEEE Transactions on Electron Devices | | | |
2019 | Ni, Pt, and Ti stanogermanide formation on Ge<inf>0.92</inf>Sn<inf>0.08</inf> | CHEE-WEE LIU ; Galluccio, E.; Petkov, N.; Mirabelli, G.; Doherty, J.; Lin, S.-V.; Lu, F.-L.; Liu, C.W.; Holmes, J.D.; Duffy, R.; CHEE-WEE LIU | 2019 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2019 | | | |
2019 | Novel Vertically-Stacked Tensily-Strained Ge<inf>0.85</inf>Si<inf>0.15</inf> GAA n-Channels on a Si Channel with SS=76mV/dec, DIBL=36mV/V, and I<inf>on</inf>/I<inf>off</inf>=1.2E7 | CHEE-WEE LIU ; Huang, Y.-S.; Lu, F.-L.; Ye, H.-Y.; Tsou, Y.-J.; Liu, Y.-C.; Tu, C.-T.; CHEE-WEE LIU | 2019 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2019 | | | |
2020 | Optical Detection of Parasitic Channels of Vertically Stacked Ge0.98Si0.02nGAAFETs | Lin, S.-Y.; Liu, H.-H.; Tu, C.-T.; Huang, Y.-S.; Lu, F.-L.; Liu, C.W.; CHEE-WEE LIU | IEEE Transactions on Electron Devices | 2 | 2 | |
2019 | Record Low Contact Resistivity (4.4¡?10<sup>-10</sup> £[-cm<sup>2</sup>) to Ge Using In-situ B and Sn Incorporation by CVD with Low Thermal Budget (?400¢XC) and Without Ga | CHEE-WEE LIU ; Lu, F.-L.; Tsai, C.-E.; Huang, C.-H.; Ye, H.-Y.; Lin, S.-Y.; CHEE-WEE LIU | Digest of Technical Papers - Symposium on VLSI Technology | | | |
2020 | Thermoelectric transport of the half-filled lowest Landau level in a p-type Ge/SiGe heterostructure | Liu, X.; Lu, T.-M.; Harris, C.T.; Lu, F.-L.; Liu, C.-Y.; JIUN-YUN LI ; CHEE-WEE LIU ; Du, Rui-Rui | Physical Review B | 1 | 0 | |