公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
---|---|---|---|---|---|---|
2008 | Breakdown Behavior of 40-nm PD-SOI NMOS Device Considering STI-Induced Mechanical Stress Effect | I. S. Lin; V. C. Su; D. Chen; C. S. Yeh; C. T. Tsai; M. Ma; JAMES-B KUO | IEEE Electron Device Letters | 7 | 3 | |
2007 | Influence of STI-induced mechnical stress in kink effect of 65nm PD SOI CMOS devices | I. Lin; V. Su; J. Kuo; R. Lee; G. Lin; D. Chen; C. Yeh; C. Tsai; M. Ma; JAMES-B KUO | Electron Devices and Solid State State Circuits (EDSSC) Conf | 1 | 0 | |
2008 | Shallow-trench-isolation (STI)-induced mechanical-stress-related kink-effect behaviors of 40-nm PD SOI NMOS device | I. S. Lin; V. C. Su; J. B. Kuo; R. Lee; G. S. Lin; D. Chen; C. S. Yeh; C. T. Tsai; M. Ma; JAMES-B KUO | IEEE Transactions Electron Devices | 3 | 1 | |
2007 | STI Mechanical Stress Induced Subthreshold Kink Effect of 40nm PD SOI NMOS Devices | I. Lin; V. Su; J. B. kuo; M. Ma; C. T. Tsai; C. S. Yeh; D. Chen; JAMES-B KUO | IEEE International Semicondcutor Device Research Symp (ISDRS) | 3 | 0 | |
2008 | STI Mechanical-Stress Induced Small-Geometry Effect on Hysteresis Phenomenon of 40nm PD SOI NMOS Device | H. J. Hung; J. I. Lu; J. B. Kuo; G. S. Lin; C. S. Yeh; C. T. Tsai; M. Ma; JAMES-B KUO | IEDMS | |||
2008 | STI-Induced Mechanical Stress-Related Breakdown Behavior of 40nm PD SOI NMOS Devices | J. B. Kuo; D. Chen; C. S. Yeh; C. T. Tsai; M. Ma; JAMES-B KUO | ICSICT | |||
2008 | STI-Induced Mechanical-Stress-Related Kink Effect of 40nm PD SOI NMOS Devices | I. S. Lin; V. C. Su; J. B. Kuo; D. Chen; C. S. Yeh; C. T. Tsai; M. Ma; JAMES-B KUO | European SOI Conference |