公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
1995 | In-situ Ga 2 O 3 process for GaAs inversion/accumulation device and surface passivation applications | Passlack, Matthias; Hong, Minghwei; Mannaerts, Joseph P; Chu, SNG; Opila, Robert L; Moriya, Netzer; MINGHWEI HONG | International Electron Devices Meeting 1995 | | | |
1993 | Method of making an article comprising a periodic heteroepitaxial semiconductor structure | Chen, Young-Kai; Hong, Minghwei; Mannaerts, Joseph P; Wu, Ming-Chiang; MINGHWEI HONG | | | | |
1994 | Process for removing surface contaminants from III-V semiconductors | Choquette, Kent D; Freund, Robert S; Hong, Minghwei; Mannaerts, Joseph P; MINGHWEI HONG | | | | |
1996 | Thermodynamic and photochemical stability of low interface state density Ga2O3-GaAs structures fabricated by insitu molecular beam epitaxy | Passlack, Matthias; Hong, Minghwei; Mannaerts, Joseph P; Opila, Robert L; Ren, Fan; MINGHWEI HONG | Applied Physics Letters | | | |
1990 | Vertical-cavity surface-emitting lasers with semitransparent metallic mirrors and high quantum efficiencies | Tu, Li-Wei; Schubert, E Fred; Kopf, Rose F; Zydzik, George J; Hong, Minghwei; Chu, SN George; Mannaerts, Joseph P; MINGHWEI HONG | Applied Physics Letters | | | |