公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
2009 | Electron accumulation at nonpolar and semipolar surfaces of wurtzite InN from generalized infrared ellipsometry | Darakchieva, V.; Schubert, M.; Hofmann, T.; Monemar, B.; Hsiao, C.-L.; Liu, T.-W.; Chen, L.-C. ; Schaff, W.J.; Takagi, Y.; Nanishi, Y. | Applied Physics Letters | 26 | 24 | |
2010 | Hydrogen in InN: A ubiquitous phenomenon in molecular beam epitaxy grown material | Darakchieva, V.; Lorenz, K.; Barradas, N.P.; Alves, E.; Monemar, B.; Schubert, M.; Franco, N.; Hsiao, C.L.; Chen, L.C. ; Schaff, W.J.; Tu, L.W.; Yamaguchi, T.; Nanishi, Y. | Applied Physics Letters | 38 | 37 | |
2013 | Nucleation of single GaN nanorods with diameters smaller than 35 nm by molecular beam epitaxy | Chen, Y.-T.; Araki, T.; Palisaitis, J.; Persson, P.O.Å.; Chen, L.-C. ; Chen, K.-H.; Olof Holtz, P.; Birch, J.; Nanishi, Y. | Applied Physics Letters | 7 | 5 | |
2010 | Structural anisotropy of nonpolar and semipolar InN epitaxial layers | Darakchieva, V.; Xie, M.-Y.; Franco, N.; Giuliani, F.; Nunes, B.; Alves, E.; Hsiao, C.L.; Chen, L.C. ; Yamaguchi, T.; Takagi, Y.; Kawashima, K.; Nanishi, Y. | Journal of Applied Physics | 18 | 21 | |
2011 | Unintentional incorporation of hydrogen in wurtzite InN with different surface orientations | Darakchieva, V.; Lorenz, K.; Xie, M.-Y.; Alves, E.; Hsiao, C.L.; Chen, L.C. ; Tu, L.W.; Schaff, W.J.; Yamaguchi, T.; Nanishi, Y. | Journal of Applied Physics | 3 | 3 | |
2008 | Unravelling the free electron behavior in InN | Darakchieva, V.; Hofmann, T.; Schubert, M.; Sernelius, B.E.; Giuliani, F.; Xie, M.-Y.; Persson, P.O.Å.; Monemar, B.; Schaff, W.J.; Hsiao, C.-L.; Chen, L.-C. ; Nanishi, Y. | Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD | 0 | 0 | |