公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
1997 | A Ga 2 O 3 passivation technique compatible with GaAs device processing | Hong, M; Passlack, M; Mannaerts, JP; Harris, TD; Schnoes, ML; Opila, RL; Krautter, HW; MINGHWEI HONG | Solid-State Electronics | | | |
1997 | Advancing metal-oxide-semiconductor theory: Steady-state nonequilibrium conditions | Passlack, M; Hong, M; Schubert, EF; Zydzik, GJ; Mannaerts, JP; Hobson, WS; Harris, TD; MINGHWEI HONG | Journal of Applied Physics | | | |
1996 | C-V and G-V characterization of in-situ fabricated Ga 2 O 3 GaAs interfaces for inversion/accumulation device and surface passivation applications | Passlack, M; Hong, M; Mannaerts, JP; MINGHWEI HONG | Solid-State Electronics | | | |
1995 | Capacitance-voltage and current-voltage characterization of AlxGa1- xAs-GaAs structures | Passlack, M; Hong, M; Mannaerts, JP; Chiu, TH; Mendonca, CA; Centanni, JC; MINGHWEI HONG | Journal of Applied Physics | | | |
1994 | Dielectric properties of electron-beam deposited Ga2O3 films | Passlack, M; Hunt, NEJ; Schubert, EF; Zydzik, GJ; Hong, M; Mannaerts, JP; Opila, RL; Fischer, RJ; MINGHWEI HONG | Applied Physics Letters | | | |
1995 | Ga203 films for electronic and optoelectronic ap | Passlack, M; Schubert, EF; Hobson, WS; Hong, M; Moriya, N; Chu, SNG; Konstadinidis, K; Mannaerts, JP; Schnoes, ML; Zydzik, GJ; MINGHWEI HONG | Journal of Applied Physics | | | |
1995 | Ga2O3 films for electronic and optoelectronic applications | Passlack, M; Schubert, EF; Hobson, WS; Hong, M; Moriya, N; Chu, SNG; Konstadinidis, K; Mannaerts, JP; Schnoes, ML; Zydzik, GJ; MINGHWEI HONG | Journal of Applied Physics | | | |
1995 | GA2O3 FILMS FOR INSULATOR/III-V SEMICONDUCTOR INTERFACES | Passlack, M; Hong, M; Schubert, EF; Mannaerts, JP; HOBSON, WS; MORIYA, N; LOPATA, J; ZYDZIK, GJ; MINGHWEI HONG | Compound Semiconductors, 1994 | | | |
1996 | GaAs surface passivation using in-situ oxide deposition | Passlack, M; Hong, M; Opila, RL; Mannaerts, JP; Kwo, JR; MINGHWEI HONG | Applied Surface Science | 19 | 18 | |
1995 | In situ fabricated Ga2O3-GaAs structures with low interface recombination velocity | Passlack, M; Hong, M; Schubert, EF; Kwo, JR; Mannaerts, JP; Chu, SNG; Moriya, N; Thiel, FA; MINGHWEI HONG | Applied Physics Letters | | | |
1998 | Insulator passivation of In 0.2 Ga 0.8 As-GaAs surface quantum wells | Passlack, M; Hong, M; Harris, TD; Mannaerts, JP; Vakhshoori, D; Schnoes, ML; MINGHWEI HONG | IEEE Journal of Quantum Electronics | | | |
1997 | Low D it, thermodynamically stable Ga 2 O 3-GaAs interfaces: fabrication, characterization, and modeling | Passlack, M; Hong, M; Mannaerts, JP; Opila, RL; Chu, SNG; Moriya, N; Ren, F; Kwo, JR; MINGHWEI HONG | IEEE Transactions on Electron Devices | | | |
1996 | Low interface state density oxide-GaAs structures fabricated by in-situ molecular beam epitaxy | Passlack, M; Hong, M; MINGHWEI HONG | MRS Proceedings | 6 | | |
1996 | Low interface state density oxide-GaAs structures fabricated by insitu molecular beam epitaxy | Hong, M; Passlack, M; Mannaerts, JP; Kwo, J; Chu, SNG; Moriya, N; Hou, SY; Fratello, VJ; MINGHWEI HONG | Journal of Vacuum Science & Technology B | | | |
1997 | Novel Ga 2 O 3 (Ga 2 O 3) passivation techniques to produce low D it oxide-GaAs interfaces | Hong, M; Mannaerts, JP; Bower, JE; Kwo, J; Passlack, M; Hwang, W-Y; Tu, LW; MINGHWEI HONG | Journal of Crystal Growth | | | |
1996 | Observation of inversion layers at Ga 2 O 3-GaAs interfaces fabricated by in-situ molecular-beam epitaxy | Passlack, M; Hong, M; Mannaerts, JP; MINGHWEI HONG | Electronics Letters | | | |
1996 | Quasistatic and high frequency capacitance-voltage characterization of Ga2O3-GaAs structures fabricated by insitu molecular beam epitaxy | Passlack, M; Hong, M; Mannaerts, JP; MINGHWEI HONG | Applied Physics Letters | | | |
1996 | Recombination velocity at oxide-GaAs interfaces fabricated by in situ molecular beam epitaxy | Passlack, M; Hong, M; Mannaerts, JP; Kwo, JR; Tu, LW; MINGHWEI HONG | Applied Physics Letters | 60 | 63 | |