公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
2010 | A complete Raman mapping of phase transitions in Si under indentation | Das, C.R.; Hsu, H.C.; Dhara, S.; Bhaduri, A.K.; Raj, B.; Chen, L.C. ; Chen, K.H.; Albert, S.K.; Ray, A.; Tzeng, Y. | Journal of Raman Spectroscopy | 17 | 15 | |
2010 | Direct observation of amophization in load rate dependent nanoindentation studies of crystalline Si | Das, C.R.; Dhara, S.; Jeng, Y.-R.; Tsai, P.-C.; Hsu, H.C.; Raj, B.; Bhaduri, A.K.; Albert, S.K.; Tyagi, A.K.; Chen, L.C. ; Chen, K.H. | Applied Physics Letters | 22 | 22 | |
2010 | Focused ion beam induced nanojunction and defect doping as a building block for nanoscale electronics in GaN nanowires | Dhara, S.; Lu, C.Y.; Wu, C.T.; Hsu, C.W.; Tu, W.S.; Chen, K.H.; Wang, Y.L.; Chen, L.C. ; Raj, B. | Journal of Physical Chemistry C | 7 | 7 | |
2008 | Mechanism of bright red emission in Si nanoclusters | Dhara, S.; Lu, C.-Y.; Nair, K.G.M.; Chen, K.-H.; Chen, C.-P.; Huang, Y.-F.; David, C.; Chen, L.-C. ; Raj, B. | Nanotechnology | 23 | 19 | |
2009 | The mechanism of the recrystallization process in epitaxial GaN under dynamic stress field: Atomistic origin of planar defect formation | Das, C.R.; Dhara, S.; Hsu, H.C.; Chen, L.C. ; Jeng, Y.R.; Bhaduri, A.K.; Raj, B.; Chen, K.H.; Albert, S.K. | Journal of Raman Spectroscopy | 8 | 7 | |
2008 | Recrystallization of epitaxial GaN under indentation | Dhara, S.; Das, C.R.; Hsu, H.C.; Raj, B.; Bhaduri, A.K.; Chen, L.C. ; Chen, K.H.; Albert, S.K.; Ray, A. | Applied Physics Letters | 13 | 14 | |