公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
1998 | Article comprising a gallium layer on a GaAs-based semiconductor, and method of making the article | Hong, Minghwei; Kwo, Jueinai Raynien; Mannaerts, Joseph Petrus; Passlack, Matthias; Ren, Fan; Zydzik, George John; MINGHWEI HONG | | | | |
1999 | Article comprising an oxide layer on GAN | Hobson, William Scott; Hong, Minghwei; Lothian, James Robert; Mannaerts, Joseph Petrus; Ren, Fan; MINGHWEI HONG | | | | |
1998 | Ga2O3 (Gd2O3) as a dielectric insulator for GaAs device applications | Lay, Tsong S; Hong, Minghwei; Mannaerts, JP; Liu, CT; Kwo, Jueinai R; Ren, Fan; Marcus, MA; Ng, KK; Chen, Young-Kai; Chou, Li-Jen; others; MINGHWEI HONG | Asia Pacific Symposium on Optoelectronics' 98 | | | |
1999 | Gallium-gadolinium oxide gate oxide etch stop layer | Cho, Alfred Yi; Hong, Minghwei; Lothian, James Robert; Mannaerts, Joseph Petrus; Ren, Fan; MINGHWEI HONG | | | | |
1996 | Thermodynamic and photochemical stability of low interface state density Ga2O3-GaAs structures fabricated by insitu molecular beam epitaxy | Passlack, Matthias; Hong, Minghwei; Mannaerts, Joseph P; Opila, Robert L; Ren, Fan; MINGHWEI HONG | Applied Physics Letters | | | |
2001 | Transistor | Chen, Young-Kai; Cho, Alfred Yi; Hobson, William Scott; Hong, Minghwei; Kuo, Jenn-Ming; Kwo, Jueinai Raynien; Murphy, Donald Winslow; Ren, Fan; MINGHWEI HONG | | | | |