Skip navigation
中文
English
DSpace
CRIS
首頁
單位
研究人員
研究成果檢索
分類瀏覽
單位
研究人員
研究成果檢索
學術出版
幫助
登入
中文
English
NTU Scholars
研究成果檢索
瀏覽 的方式: 作者
S. C. Lin
或是輸入前幾個字:
跳到:
0-9
A
B
C
D
E
F
G
H
I
J
K
L
M
N
O
P
Q
R
S
T
U
V
W
X
Y
Z
排序方式:
升冪
降冪
結果/頁面
5
10
15
20
25
30
35
40
45
50
55
60
65
70
75
80
85
90
95
100
作者/紀錄:
全部
1
5
10
15
20
25
30
35
40
45
50
顯示 1 到 18 筆資料,總共 18 筆
公開日期
標題
作者
來源出版物
scopus
WOS
全文
2008
A Stable Self-Learning Optimal Fuzzy Control System
S. C. Lin; Y. Y. Chen; YUNG-YAW CHEN
Asian Journal of Control
0
0
2001
An intelligent fuzzy sliding mode control system with application on precision table positioning
S. C. Lin; P. Y. Huang; YUNG-YAW CHEN
International Journal of Intelligent Systems
1
1
2002
Closed-form analytical drain current model considering energy transport and self-heating for short-channel fully-depleted SOI NMOS devices with lightly-doped drain structure biased in strong inversion
S. C. Lin; J. B. Kuo; JAMES-B KUO
IEEE Transactions on Electron Devices
3
1
2002
Closed-Form Breakdown Voltage Model for PD SOI NMOS Devices Considering Impact Ionization of Both Parasitic BJT and Surface MOS Channel Simultaneously
S. C. Lin; JAMES-B KUO
IEEE Transactions on Electron Devices
1
1
2002
Compact Breakdown Model for PD SOI NMOS Devices Considering BJT/MOS Impact Ionization for SPICE Circuits Simulation
J. B. Kuo; S. C. Lin; JAMES-B KUO
IEDMS
2002
Compact LDD/FD SOI CMOS Device Model Considering Energy Transport and Self Heating for SPICE Circuit Simulation
J. B. Kuo; S. C. Lin; JAMES-B KUO
IEDMS
1999
Compact MOS/Bipolar Charge-Control Model of Partially-Depleted SOI CMOS Devices for VLSI Circuit Simulation---SOI-Technology (ST)-SPICE
J. B. Kuo; K. W. Su; S. C. Lin; JAMES-B KUO
European Solid State Device Research Conference (ESSDERC)
2002
Compact threshold-voltage model for short-channel partially-depleted (PD) SOI dynamic-threshold MOS (DTMOS) devices
J. B. Kuo; K. H. Yuan; S. C. Lin; JAMES-B KUO
IEEE Transactions on Electron Devices
7
6
2013
Effect of Plasma Pretreatment on Amyloid Fibril Formation of Lysozyme
C. K. Chang; W. A. Chen; C. Y. Sie; S. C. Lin; C. C; Hsu; S. S.-S. Wang
2014
The Effect of the Electrode Diameter on the Behavior of Plasmas in Saline Solution
S. C. Lin; C. C. Hsu
2002
Fringing-Induced Barrier Lowering (FIBL) Effects of 100nm FD SOI NMOS Devices with High Permittivity Gate Dielectrics and LDD/Sidewall Oxide Spacer
S. C. Lin; J. B. Kuo; JAMES-B KUO
IEEE SOI Conference Proc
2
0
2004
Low-Voltage SOI CMOS VLSI Devices and Circuits
J. B. Kuo; S. C. Lin; JAMES-B KUO
2001
Low-Voltage SOI CMOS VLSI Devices and Circuits
J. B. Kuo; S. C. Lin; JAMES-B KUO
2001
Modeling of Single-Transistor Latch Behavior in Partially-Depleted (PD) SOI CMOS Devices Using a Concise SOI-SPICE Model
J. B. Kuo; S. C. Lin; JAMES-B KUO
International Conference on Semiconductor IC Technology (ICSICT)
1
0
2003
Modeling the Fringing Electric Field Effect on the Threshold Voltage of FD SOI NMOS Devices with the LDD/Sidewall Oxide Spacer Structure
S. C. Lin; J. B. Kuo; JAMES-B KUO
IEEE Transactions on Electron Devices
74
64
2004
PD SOI-Technology SPICE Models
J. B. Kuo; S. C. Lin; JAMES-B KUO
Wiley's Texbook by J. B. Kuo: SOI CMOS VLSI Devices
0
0
2013
Strategies to Tailor Discharge Behavior of Solution Plasma via Different Power Types
H. W. Chang; S. C. Lin; C. Y. Chou; F. H. Huang,; C. C. Hsu
2002
The Fringing Electric Field Effect on the Short-Channel Effect Threshold Voltage of FD SOI NMOS Devices with LDD/Sidewall Oxide Spacer Structure
J. B. Kuo; S. C. Lin; JAMES-B KUO
Hong Kong Electron Devices Meeting
2
0