公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
1997 | A Ga 2 O 3 passivation technique compatible with GaAs device processing | Hong, M; Passlack, M; Mannaerts, JP; Harris, TD; Schnoes, ML; Opila, RL; Krautter, HW; MINGHWEI HONG | Solid-State Electronics | | | |
1995 | Ga203 films for electronic and optoelectronic ap | Passlack, M; Schubert, EF; Hobson, WS; Hong, M; Moriya, N; Chu, SNG; Konstadinidis, K; Mannaerts, JP; Schnoes, ML; Zydzik, GJ; MINGHWEI HONG | Journal of Applied Physics | | | |
1995 | Ga2O3 films for electronic and optoelectronic applications | Passlack, M; Schubert, EF; Hobson, WS; Hong, M; Moriya, N; Chu, SNG; Konstadinidis, K; Mannaerts, JP; Schnoes, ML; Zydzik, GJ; MINGHWEI HONG | Journal of Applied Physics | | | |
1998 | Insulator passivation of In 0.2 Ga 0.8 As-GaAs surface quantum wells | Passlack, M; Hong, M; Harris, TD; Mannaerts, JP; Vakhshoori, D; Schnoes, ML; MINGHWEI HONG | IEEE Journal of Quantum Electronics | | | |