公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
2014 | Assessing structural, free-charge carrier, and phonon properties of mixed-phase epitaxial films: The case of InN | Xie, M.-Y.; Schubert, M.; Lu, J.; Persson, P.O.A.; Stanishev, V.; Hsiao, C.L.; Chen, L.C. ; Schaff, W.J.; Darakchieva, V. | Physical Review B - Condensed Matter and Materials Physics | 16 | 15 | |
2009 | Electron accumulation at nonpolar and semipolar surfaces of wurtzite InN from generalized infrared ellipsometry | Darakchieva, V.; Schubert, M.; Hofmann, T.; Monemar, B.; Hsiao, C.-L.; Liu, T.-W.; Chen, L.-C. ; Schaff, W.J.; Takagi, Y.; Nanishi, Y. | Applied Physics Letters | 26 | 24 | |
2010 | Hydrogen in InN: A ubiquitous phenomenon in molecular beam epitaxy grown material | Darakchieva, V.; Lorenz, K.; Barradas, N.P.; Alves, E.; Monemar, B.; Schubert, M.; Franco, N.; Hsiao, C.L.; Chen, L.C. ; Schaff, W.J.; Tu, L.W.; Yamaguchi, T.; Nanishi, Y. | Applied Physics Letters | 38 | 37 | |
2008 | Unravelling the free electron behavior in InN | Darakchieva, V.; Hofmann, T.; Schubert, M.; Sernelius, B.E.; Giuliani, F.; Xie, M.-Y.; Persson, P.O.Å.; Monemar, B.; Schaff, W.J.; Hsiao, C.-L.; Chen, L.-C. ; Nanishi, Y. | Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD | 0 | 0 | |