公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
2008 | 1 nm equivalent oxide thickness in Ga 2 O 3 (Gd 2 O 3)/In 0.2 Ga 0.8 As metal-oxide-semiconductor capacitors | Shiu, KH; Chiang, TH; Chang, P; Tung, LT; Hong, M; Kwo, J; Tsai, W; MINGHWEI HONG | Applied Physics Letters | | | |
2008 | Approaching Fermi level unpinning in oxide-In0. 2Ga0. 8As | Chiang, TH; Lee, WC; Lin, TD; Lin, Dennis; Shiu, KH; Kwo, J; Wang, WE; Tsai, W; Hong, M; MINGHWEI HONG | IEEE International Electron Devices Meeting, 2008 | | | |
2008 | Inversion n-channel GaN MOSFETs with atomic-layer-deposited A1 2 O 3 as gate dielectrics | Chang, YC; Chang, WH; Chiu, HC; Shiu, KH; Lee, CH; Hong, M; Kwo, J; Hong, JM; Tsai, CC; MINGHWEI HONG | 2008 Device Research Conference | | | |
2008 | Inversion-channel GaN metal-oxide-semiconductor field-effect transistor with atomic-layer-deposited Al 2 O 3 as gate dielectric | Chang, YC; Chang, WH; Chiu, HC; Tung, LT; Lee, CH; Shiu, KH; Hong, M; Kwo, J; Hong, JM; Tsai, CC; MINGHWEI HONG | Applied Physics Letters | | | |
2008 | Oxide scalability in Al [sub 2] O [sub 3]/Ga [sub 2] O [sub 3](Gd [sub 2] O [sub 3])/In [sub 0.20] Ga [sub 0.80] As/GaAs heterostructures | Shiu, KH; Chiang, CH; Lee, YJ; Lee, WC; Chang, P; Tung, LT; Hong, M; Kwo, J; Tsai, W; MINGHWEI HONG | Journal of Vacuum Science Technology B: Microelectronics and Nanometer Structures | | | |
2008 | Oxide scalability in Al2O3/Ga2O3 (Gd2O3)/In0. 20Ga0. 80As/GaAs heterostructures | Shiu, KH; Chiang, CH; Lee, YJ; Lee, WC; Chang, P; Tung, LT; Hong, M; Kwo, J; Tsai, W; MINGHWEI HONG | Journal of Vacuum Science & Technology B | | | |