| Issue Date | Title | Author(s) | Source | scopus | WOS | Fulltext/Archive link |
| 1993 | Alloy scattering limited transport of two-dimensional carriers in strained Si<inf>1-x</inf>Ge<inf>x</inf> quantum wells | Venkataraman, V.; Liu, C.W.; Sturm, J.C.; CHEE-WEE LIU | Applied Physics Letters | 31 | 29 | |
| 2009 | Bandgap dependence of band-to-band tunneling and defect-mediated excess currents in SiGe/Si heterojunction tunnel diodes grown by RTCVD | Li, J.-Y.; Sturm, J.C.; JIUN-YUN LI | Device Research Conference | 5 | 0 | |
| 1995 | Defect-free band-edge photoluminescence and band gap measurement of pseudomorphic Si<inf>1-x-y</inf>Ge<inf>x</inf>C<inf>y</inf> alloy layers on Si (100) | St. Amour, A.; Liu, C.W.; Sturm, J.C.; Lacroix, Y.; Thewalt, M.L.W.; CHEE-WEE LIU | Applied Physics Letters | 108 | 96 | |
| 1995 | Defect-free band-edge photoluminescence in SiGeC strained layers grown by rapid thermal chemical vapor deposition | Liu, C.W.; Amour, A.St.; Sturm, J.C.; Lacroix, Y.R.J.; Thewalt, M.L.W.; CHEE-WEE LIU | Materials Research Society Symposium | | | |
| 2013 | Electronic Materials | Sturm, J.C.; Rim, K.; Harris, J.S.; Wu, C.-C.; CHUNG-CHIH WU | Guide to State-of-the-Art Electron Devices | 0 | 0 | |
| 1995 | Erratum: Defect-free band-edge photoluminescence and band gap measurement of pseudomorphic Si<inf>1-x-y</inf>Ge<inf>x</inf>C<inf>y</inf> alloy layers on Si (100)" (Appl. Phys. Lett. (1995) 67 (3915)) | Amour, A.St.; Liu, C.W.; Sturm, J.C.; Lacroix, Y.; Thewalt, M.L.W.; CHEE-WEE LIU | Applied Physics Letters | 0 | | |
| 1995 | Erratum: Defect-free band-edge photoluminescence and band gap measurement of pseudomorphic Si<inf>1-x-y</inf>Ge<inf>x</inf>C<inf>y</inf> alloy layers on Si (100)" (Appl. Phys. Lett. (1995) 67 (3915)) | Amour, A.St.; Liu, C.W.; Sturm, J.C.; Lacroix, Y.; Thewalt, M.L.W.; CHEE-WEE LIU | Applied Physics Letters | | | |
| 2013 | Extremely high electron mobility in isotopically-enriched 28Si two-dimensional electron gases grown by chemical vapor deposition | Li, J.-Y.; Huang, C.-T.; Rokhinson, L.P.; Sturm, J.C.; JIUN-YUN LI | Applied Physics Letters | 18 | 17 | |
| 2012 | Extremely low electron density in a modulation-doped Si/SiGe two-dimensional electron gases by effective schottky gating | Li, J.Y.; Huang, C.T.; Rokhinson, L.P.; Sturm, J.C.; JIUN-YUN LI | ECS Transactions | 3 | 0 | |
| 2012 | Extremely sharp phosphorus turn-off slope and effect of hydrogen on phosphorus surface segregation in epitaxially-grown relaxed Si0.7Ge0.3 by RTCVD | Li, J.-Y.; Huang, C.-T.; Sturm, J.C.; JIUN-YUN LI | 2012 International Silicon-Germanium Technology and Device Meeting, ISTDM 2012 | 0 | 0 | |
| 2008 | Fracture mechanisms of sink thin-films on compliant substrates | Kattamis, A.Z.; Cherenack, K.H.; Cheng, I.C.; Long, K.; Sturm, J.C.; Wagner, S.; I-CHUN CHENG | Materials Research Society Symposium | | | |
| 1994 | Growth and band gap of strained 〈110〉 Si<inf>1-x</inf>Ge <inf>x</inf> layers on silicon substrates by chemical vapor deposition | Liu, C.W.; Sturm, J.C.; Lacroix, Y.R.J.; Thewalt, M.L.W.; Perovic, D.D.; CHEE-WEE LIU | Applied Physics Letters | 27 | 25 | |
| 1996 | Growth and photoluminescence of high quality SiGeC random alloys on silicon substrates | Liu, C.W.; St. Amour, A.; Sturm, J.C.; Lacroix, Y.R.J.; Thewalt, M.L.W.; Magee, C.W.; Eaglesham, D.; CHEE-WEE LIU | Journal of Applied Physics | | | |
| 1994 | Growth and photoluminescence of strained 〈 110 〉 Si/Si<inf>1-x</inf>Ge<inf>x</inf>/Si quantum wells grown by rapid thermal chemical vapor deposition | Liu, C.W.; Sturm, J.C.; Lacroix, Y.R.J.; Thewalt, M.L.W.; Perovic, D.D.; CHEE-WEE LIU | Materials Research Society Symposium | | | |
| 1997 | Growth of β-SiC on Si and poly-Si on β-SiC by rapid thermal chemical vapor deposition | Liu, C.W.; Sturm, J.C.; CHEE-WEE LIU | Materials Research Society Symposium | | | |
| 2012 | High breakdown voltage schottky gating of doped Si/SiGe 2DEG systems enabled by suppression of phosphorus surface segregation | Huang, C.-T.; Li, J.-Y.; Sturm, J.C.; JIUN-YUN LI | 2012 International Silicon-Germanium Technology and Device Meeting, ISTDM 2012 | 0 | 0 | |
| 1996 | High field drift velocity of 2DEG in Si/SiGe heterostructures as determined by magnetoresistance techniques | Madhavi, S.; Venkataraman, V.; Liu, C.W.; Sturm, J.C.; CHEE-WEE LIU | Annual Device Research Conference Digest | | | |
| 2006 | High mobility nanocrystalline silicon transistors on clear plastic substrates | Kattamis, A.Z.; Holmes, R.J.; Cheng, I.-C.; Long, K.; Sturm, J.C.; Forrest, S.R.; Wagner, S.; I-CHUN CHENG | IEEE Electron Device Letters | 35 | 30 | |
| 2005 | High-temperature (250°C) amorphous-silicon TFT's on clear plastic substrates | Long, K.; Kattamis, A.; Cheng, I.-C.; Gao, Y.X.; Gleskova, H.; Wagner, S.; Sturm, J.C.; I-CHUN CHENG | SID International Symposium | 5 | 0 | |
| 2013 | Implant isolation of silicon two-dimensional electron gases at 4.2 K | Huang, C.-T.; Li, J.-Y.; Sturm, J.C.; JIUN-YUN LI | IEEE Electron Device Letters | 1 | 2 | |
