公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
1981 | Characterization of FaAs epitaxial layers by low pressure MOVPE using TEG as Ga source | Chang, C.Y.; Su, Y.K.; Lee, M.K.; Chen, L.G.; Houng, M.P.; LIANG-GEE CHEN | Journal of Crystal Growth | 36 | 36 | |
2017 | GaAs metal-oxide-semiconductor push with molecular beam epitaxy Y<inf>2</inf>O<inf>3</inf> ??In comparison with atomic layer deposited Al<inf>2</inf>O<inf>3</inf> | Wan, H.W.; Lin, K.Y.; Cheng, C.K.; Su, Y.K.; Lee, W.C.; Hsu, C.H.; Pi, T.W.; Kwo, J.; MINGHWEI HONG ; CHIA-KUEN CHENG | Journal of Crystal Growth | 8 | 6 | |
1981 | GROWTH AND PROPERTIES OF GaP/Si DEVICE BY MOCVD. | Su, Y.K.; Chang, C.Y.; Wu, T.S.; Lee, M.K.; Houng, M.P.; Chen, L.G.; LIANG-GEE CHEN | Proceedings of the Electrochemical Society | | | |
2015 | Influence of tunneling barrier width on the forward current characteristics of InAs-based microwave p-n diode | Yang, C.C.; Su, Y.K.; Lin, H.H.; HAO-HSIUNG LIN | Microelectronics Journal | | | |
1983 | Numerical analysis of an injection laser with stripe geometry | Chen, L.G.; Chang, C.Y.; Su, Y.K.; Wu, T.S.; LIANG-GEE CHEN | Optics and Lasers in Engineering | 0 | 0 | |
1994 | P-N Double Quantum Well Resonant Interband Tunneling Diode with Peak-to-Valley Current Ratio of 144 at Room Temperature | Tsai, H.H.; Su, Y.K.; Wang, R.L.; Lin, H.H.; Lee, T.L.; HAO-HSIUNG LIN | IEEE Electron Device Letters | | | |
1998 | Study and application of reactive ion etching on GaInP/InGaAs/GaInP quantum-well HEMTs | Kuo, C.W.; Su, Y.K.; Tsia, C.Y.; HAO-HSIUNG LIN | Solid-State Electronics | 7 | 7 | |