公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
---|---|---|---|---|---|---|
1995 | High-breakdown-voltage Ga0.51In0.49P/GaAs I-HEMT and I2HEMT with a GaInP passivation layer grown by gas source molecular beam epitaxy | Sun, T.P.; Huang, C.L.; Lu, S.S. | Solid State Electronics | 17 | 16 | |
1996 | A study of the dark currents of InSb charge injection devices | Sun, T.P.; Liao, R.H.; Wang, C.H.; Hong, H.M.; Chang, H.; Wu, C.W.; Liu, J.S.; Lin, H.H.; HAO-HSIUNG LIN | Optical and Quantum Electronics | 0 | 0 |