公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
---|---|---|---|---|---|---|
2009 | A comparative study of GaAsSbN epilayers grown by gas-source molecular-beam epitaxy with different plasma nitrogen species | Y. T. Lin; T. C. Ma; HAO-HSIUNG LIN | 2009 International electron devices and materials symposia | |||
2009 | Ambient light sensor utilizing combination of filter layer and absorption layer to achieve similar sensitivity to the light as the human eye | H. H. Lin; T. C. Ma; Y. R. Lin; J. P. Wang; C. H. Huang; HAO-HSIUNG LIN | ||||
2008 | Band structure of dilute nitride GaAsSbN | Y. T. Lin; T. C. Ma; S. P. Wang; HAO-HSIUNG LIN | 2008 International electron devices and materials symposia | |||
2009 | Characterization of a nitrogen radio-frequency plasma source for growing dilute nitride GaAsSbN | T. C. Ma; HAO-HSIUNG LIN | MBE Taiwan 2009 | |||
2009 | Comparision of annealing effects on the electrical and optical properties of GaAsN, GaAsSb, and GaAsSbN | Y. T. Lin; T. C. Ma; S. P. Wang; HAO-HSIUNG LIN | MBE Taiwan 2009 | |||
2008 | Design and fabrication of AlGaAs ambient light detectors | T. C. Lin; T. C. Ma; HAO-HSIUNG LIN | IEEE Photonics Technology Letters | |||
2007 | Dilute nitride GaAs0.852Sb0.117N0.031/ GaAs PIN detector with a cut-off wavelength>1.5m | C. K. Chen; T. C. Ma; Y. T. Lin; HAO-HSIUNG LIN | International electron devices and materials symposia | |||
2008 | Dilute nitride GaAsSbN grown by gas source molecular beam epitaxy | H. H. Lin; T. C. Ma; Y. T. Lin; C. K. Chen; T. Y. Chen; HAO-HSIUNG LIN | MBE Taiwan 2008 | |||
2008 | Effect of annealing on the electrical and optical properties of dilute nitride GaAsSbN | S. P. Wang; T. C. Ma; Y. T. Lin; HAO-HSIUNG LIN | 2008 International electron devices and materials symposia | |||
2010 | Effect of thermal annealing on the blue shift of energy gap and nitrogen rearrangement in GaAsSbN | Y. T. Lin; T. C. Ma; H. H. Lin; J. D. Wu; Y. S. Huang; HAO-HSIUNG LIN | Applied Physics Letters | 12 | ||
2007 | Effect of thermal annealing on the optical properties of GaAsSbN | Y. T. Lin; T. C. Ma; S. P. Wang; HAO-HSIUNG LIN | International electron devices and materials symposia | |||
2009 | Effects of annealing on the electrical and optical properties of dilute nitride GaAsSbN | S. P. Wang; T. C. Ma; Y. T. Lin; HAO-HSIUNG LIN | International Journal of Electrical Engineering | |||
2010 | Effects of different plasma species on the N incorporation of GaAsSbN grown by plasma-assisted GSMBE | T. C. Ma; Y. T. Lin; HAO-HSIUNG LIN | MBE Taiwan 2010 | |||
2009 | Effects of plasma conditions on the nitrogen incorporation behaviors in GaAsSbN grown by plasma-assisted gas-source molecular beam epitaxy | T. C. Ma; HAO-HSIUNG LIN | 2009 International electron devices and materials symposia | |||
2011 | Effects of plasma species on the N incorporation of GaAsSbN grown by plasma-assisted gas-source molecular-beam epitaxy | T. C. Ma; Y. T. Lin; HAO-HSIUNG LIN | Journal of Crystal Growth | |||
2010 | Effects of plasma species on the N incorporation of GaAsSbN grown by plasma-assisted GSMBE | T. C. Ma; Y. T. Lin; HAO-HSIUNG LIN | 16th international conference on crystal growth (ICCG-16) | |||
2006 | Effects of thermal annealing on the energy gap of GaAsSbN | Y. T. Lin; T. C. Ma; S. P. Wang; HAO-HSIUNG LIN | International electron devices and materials symposia | |||
2008 | Energy gap reduction in GaAsSbN | Y. T. Lin; T. C. Ma; S. P. Wang; HAO-HSIUNG LIN | Applied Physics Letters | 44 | ||
2006 | GaAsSbN grown on GaAs by gas source molecular beam epitaxy | T. C. Ma; T. Y. Chen; S. K. Chang; Y. T. Lin; HAO-HSIUNG LIN | MBE Taiwan 2006 and high K materials workshop | |||
2008 | GaAsSbN/GaAs long wavelength PIN detectors | C. K. Chen; T. C. Ma; Y. T. Lin; HAO-HSIUNG LIN | 20th International Conference on Indium Phosphide and Related Materials |