公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
1997 | Built-in electric field and surface Fermi level in InP surface-intrinsic n+ structures by modulation spectroscopy | Hwang, J.S.; Chou, W.Y.; Hung, M.C.; Wang, J.S.; HAO-HSIUNG LIN | Journal of Applied Physics | | | |
2005 | Continuous-wave high-power (320 mW) single mode operation of electronic vertically coupled InAs/GaAs quantum dot narrow-ridge-waveguide lasers | Wang, J.S.; YANG-FANG CHENet al. | Applied Physics B: Lasers and Optics | 7 | 7 | |
2003 | Design theory and implementation for low-power segmented bus systems | Jone, W.-B.; Wang, J.S.; Lu, H.-I.; Hsu, I.P.; Chen, J.-Y.; HSUEH-I LU | ACM Transactions on Design Automation of Electronic Systems | | | |
1997 | Energy control by linking individual patterns to self-repeating diffractive optical elements | Lu, C.Y.; Liao, H.Z.; Lee, C.K.; Wang, J.S.; CHIH-KUNG LEE | Applied Optics | | | |
1992 | Image sequence coding using adaptive tree-structured vector quantisation with multipath searching | Chang, R.F.; Chen, W.T.; Wang, J.S.; RUEY-FENG CHANG | IEE Proceedings, Part I: Communications, Speech and Vision | 25 | 13 | |
2000 | Mechanism for photoluminescence in an InyAs1-yN/InxGa1-xAs single quantum well | JEN-CHEN FAN ; Hung, W.K.; YANG-FANG CHEN ; Wang, J.S.; HAO-HSIUNG LIN | Physical Review B - Condensed Matter and Materials Physics | | | |
2007 | Optical and structural properties of vertically stacked and electronically coupled quantum dots in InAs/GaAs multilayer structures | Wang, J.S.; HAO-HSIUNG LIN ; YANG-FANG CHEN | Nanotechnology | 15 | 13 | |
2002 | Photoluminescence study of hydrogen passivation in InAs1-xN x/InGaAs single-quantum well on InP | Ke, Y.Y.; Ya, M.H.; Chen, Y.F.; Wang, J.S.; Lin, H.H.; HAO-HSIUNG LIN ; YANG-FANG CHEN | Applied Physics Letters | 8 | 7 | |
1999 | Segmented bus design for low-power systems | Chen, J.Y.; Jone, W.B.; Wang, J.S.; Lu, H.-I.; Chen, T.F.; HSUEH-I LU | IEEE Transactions on Very Large Scale Integration (VLSI) Systems | | | |
2000 | Strain relaxation in In0.2Ga0.8As/GaAs quantum-well structures by x-ray diffraction and photoluminescence | Chen, J.F.; Wang, P.Y.; Wang, J.S.; Chen, N.C.; Guo, X.J.; Chen, Y.F.; YANG-FANG CHEN | Journal of Applied Physics | 18 | | |
2005 | Surface photovoltage spectroscopy and photoluminescence study of vertically stacked self-assembled InAs/GaAs quantum dots | Sitarek, P.; Hsu, H.P.; Chen, H.S.; Huang, Y.S.; Wang, J.S.; Lai, C.M.; Wei, L.C.; Hsiao, R.S.; Lin, S.Y.; Chi, J.Y. | Nanotechnology, 2005. 5th IEEE Conference on | 2 | 0 | |
2008 | Temperature dependences of quantum-dot laser thresholds under simultaneously three-state or two-state lasing operations | Wu, D.-C.; Lin, Y.-C.; Mao, M.-H.; Liu, W.-S.; Chiu, P.-C.; Chyi, J.-I.; Wang, J.S.; Lin, G.; Chi, J.Y.; MING-HUA MAO | Optics InfoBase Conference Papers | | | |
2006 | Temperature-dependent optical properties of In0.34 Ga0.66 As1 - x Nx / GaAs single quantum well with high nitrogen content for 1.55 μ m application grown by molecular beam epitaxy | Lai, F.-I.; Kuo, S.Y.; Wang, J.S.; Hsiao, R.S.; Kuo, H.C.; Chi, J.; Wang, S.C.; Wang, H.S.; CHI-TE LIANG ; YANG-FANG CHEN | Journal of Crystal Growth | 14 | 13 | |