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Weisbuch C
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2021
Disorder effects in nitride semiconductors: Impact on fundamental and device properties
Weisbuch C; Nakamura S; Wu Y.-R; Speck J.S.; YUH-RENN WU
Frontiers in Optics and Photonics
1
0
2020
Disorder effects in nitride semiconductors: Impact on fundamental and device properties
Weisbuch C; Nakamura S; Wu Y.-R; Speck J.S.; YUH-RENN WU
Nanophotonics
20
18
2022
Efficiency and Forward Voltage of Blue and Green Lateral LEDs with v -shaped Defects and Random Alloy Fluctuation in Quantum Wells
Ho C.-H; Speck J.S; Weisbuch C; Wu Y.-R.; YUH-RENN WU
Physical Review Applied
12
11
2022
Improved Vertical Carrier Transport for Green III-Nitride LEDs Using (In,Ga) N Alloy Quantum Barriers
Lynsky C; Lheureux G; Bonef B; Qwah K.S; White R.C; Denbaars S.P; Nakamura S; YUH-RENN WU
; Weisbuch C; Speck J.S.
Physical Review Applied
7
7
2017
Localization landscape theory of disorder in semiconductors. III. Application to carrier transport and recombination in light emitting diodes
Li C.-K; Piccardo M; Lu L.-S; Mayboroda S; Martinelli L; Peretti J; Speck J.S; Weisbuch C; Filoche M; Wu Y.-R.; YUH-RENN WU
Physical Review B
94
76
2021
Three-Dimensional Modeling of Minority-Carrier Lateral Diffusion Length including Random Alloy Fluctuations in (In, Ga) N and (Al, Ga) N Single Quantum Wells
Shen H.-T; Weisbuch C; Speck J.S; Wu Y.-R.; YUH-RENN WU
Physical Review Applied
12
10