公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
1992 | DC characterization of GaInP/GaAs tunneling emitter bipolar transistors | Lu, S.S.; Wu, C.C.; Huang, C.C.; Williamson, F.; Nathan, M.I.; LuSS | Indium Phosphide and Related Materials, 1992., Fourth International Conference on | 0 | 0 | |
1992 | Dc characterization of the Ga<inf>0.51</inf>In<inf>0.49</inf>P/GaAs tunneling emitter bipolar transistor | SHEY-SHI LU ; CHUNG-CHIH WU ; Huang, C.C.; Williamson, F.; Nathan M.I. | Applied Physics Letters | 6 | 5 | |
1992 | High Perform Ance in0.49Ga0.51P/GaAs Tunneling Emitter Bipolar Transistor Grown by Gas Source Molecular Beam Epitaxy | Wu, Chung Cheng; 呂學士 ; 李嗣涔 ; Williamson, F.; Nathan, M. I.; Lu, Shey-Shi ; Lee, Si-Chen | International Conference on Solid State Devices and Materials, SSDM | | | |
1992 | High-performance In0.49Ga0.51P/GaAs tunneling emitter bipolar transistor grown by gas source molecular beam epitaxy | Wu, C.C.; Lu, S.S.; Lee, S.C.; Williamson, F.; Nathan, M.I.; SHEY-SHI LU | Conference on Solid State Devices and Materials | | | |