公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
2015 | Asymmetric keep-out zone of through-silicon via using 28-nm technology node | CHEE-WEE LIU ; Yan, J.-Y.; Jan, S.-R.; Huang, Y.-C.; Lan, H.-S.; Huang, Y.-H.; Hung, B.; Chan, K.-T.; Huang, M.; Yang, M.-T.; CHEE-WEE LIU | IEEE Electron Device Letters | | | |
2016 | Compact modeling and simulation of TSV with experimental verification | Yan, J.-Y.; Jan, S.-R.; Huang, Y.-C.; Lan, H.-S.; Liu, C.W.; Huang, Y.-H.; Hung, B.; Chan, K.-T.; Huang, M.; Yang, M.-T.; CHEE-WEE LIU | 2016 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2016 | | | |
2014 | Fabrication and low temperature characterization of Ge (110) and (100) p-MOSFETs | CHEE-WEE LIU ; Wong, I.-H.; Chen, Y.-T.; Yan, J.-Y.; Ciou, H.-J.; Chen, Y.-S.; CHEE-WEE LIU | IEEE Transactions on Electron Devices | | | |
2013 | Mobility strain response and low temperature characterization of Ge p-MOSFETs | CHEE-WEE LIU ; Wong, I.-H.; Chen, Y.-T.; Ciou, H.-J.; Chen, Y.-S.; Yan, J.-Y.; CHEE-WEE LIU | Device Research Conference, DRC | | | |
2016 | Modeling and simulation of TSV induced keep-out zone using silicon data | Liu, C.W.; Yan, J.-Y.; Jan, S.-R.; CHEE-WEE LIU | 2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2016 - Proceedings | | | |
2016 | The hysteresis-free negative capacitance field effect transistors using non-linear poly capacitance | Fan, S.-T.; Yan, J.-Y.; Lai, D.-C.; CHEE-WEE LIU | Solid-State Electronics | | | |