公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
2008 | 2.0 μm electroluminescence from Si/ Si0.2 Ge0.8 type II heterojunctions | Liao, M.H.; Cheng, T.-H.; Liu, C.W.; Yeh, L.; Lee, T.-L.; CHEE-WEE LIU ; MING-HAN LIAO | Journal of Applied Physics | 22 | 19 | |
2008 | Digital communication using Ge metal-insulator-semiconductor light-emitting diodes and photodetectors | Cheng, T.-H.; Liao, M.H.; Yeh, L.; Lee, T.-L.; Liang, M.-S.; CHEE-WEE LIU ; MING-HAN LIAO | Journal of Applied Physics | 8 | 7 | |
2008 | Gate width dependence on backscattering characteristics in the nanoscale strained complementary metal-oxide-semiconductor field-effect transistor | Liao, M.H.; Liu, C.W.; Yeh, L.; Lee, T.-L.; CHEE-WEE LIU ; MING-HAN LIAO | Applied Physics Letters | 13 | 11 | |
2009 | An investigation about the limitation of strained-Si technology | Liao, M.H.; Yeh, L.; Lu, J.C.; Yu, M.H.; Wang, L.T.; Wu, J.; Jeng, P.-R.; Lee, T.-L.; Jang, S.; MING-HAN LIAO | International Symposium on VLSI Technology, Systems, and Applications | 1 | 0 | |
2007 | Superior n-MOSFET performance by optimal stress design | Yang, Y.-J.; Liao, M.H. ; Liu, C.W.Yeh, L., Lee, T.-L., Liang, M.-S.; Yeh, L.; Lee, T.-L.; CHEE-WEE LIU | 2007 International Semiconductor Device Research Symposium | 1 | 0 | |
2008 | Superior n-MOSFET performance by optimal stress design | Liao, M.H. ; Yeh, L.; Lee, T.-L.; Liu, C.W.; CHEE-WEE LIU | IEEE Electron Device Letters | 15 | 12 | |
2009 | The dependence of the performance of strained NMOSFETs on channel width | Yeh, L.; Liao, M.H. ; Chen, C.H.; Wu, J.; Lee, J.Y.-M.; Liu, C.W.; Lee, T.L.; CHEE-WEE LIU | IEEE Transactions on Electron Devices | 4 | 4 | |
1997 | Vascularrized Autogenous Canine Coccygeal Bone Transfer | 林安仲; 侯勝茂; Yeh, L.; Lin, An-Chung; Hou, Sheng-Mou | Microsurgery | | | |