Issue Date | Title | Author(s) | Source | scopus | WOS | Fulltext/Archive link |
2004 | Bandwidth Enhancement in an Integratable SiGe
Phototransistor by Removal of Excess Carriers | Pei, Z.; Shi, J.W.; Hsu, Y.M.; Yuan, F.; Liang, C.S.; Lu, S.C.; Hsieh, W.Y.; Tsai, M.J.; Liu, C.W. | IEEE ELECTRON DEVICE LETTERS | | |  |
2004 | Bandwidth enhancement in an integratable SiGe phototransistor by removal of excess carriers | Pei, Z.; Shi, J.-W.; Hsu, Y.-M.; Yuan, F.; Liang, C.S.; Lu, S.C.; Hsieh, W.Y.; Tsai, M.-J.; CHEE-WEE LIU | IEEE Electron Device Letters | 34 | 32 | |
2004 | BICMOS devices under mechanical strain | Liu, C.W.; Maikap, S.; Liao, M.H.; Yuan, F.; Lee, M.H.; CHEE-WEE LIU | Proceedings of the Electrochemical Society | | | |
2004 | BICMOS devices under mechanical strain | Liu, C.W.; Maikap, S.; Liao, M.H. ; Yuan, F.; Lee, M.H. | Electrochemical Society | 5 | | |
2007 | Hole mobility enhancement of Si0.2Ge0.8 quantum well channel on Si | Peng, C.-Y.; Yuan, F.; Yu, C.-Y.; Kuo, P.-S.; Lee, M. H.; Maikap, S.; Hsu, C.-H.; Liu, C. W. | Applied Physics Letters | | |  |
2007 | Hole mobility enhancement of Si<inf>0.2</inf>Ge<inf>0.8</inf> quantum well channel on Si | Peng, C.-Y.; Yuan, F.; Yu, C.-Y.; Kuo, P.-S.; Lee, M.H.; Maikap, S.; Hsu, C.-H.; Liu, C.W.; CHEE-WEE LIU | Applied Physics Letters | 27 | 27 | |
2003 | Integratable SiGe phototransistor with high speed (BW = 3 GHz) and extremely-high avalanche responsivity | Pei, Z.; Shi, J.-W.; Hsu, Y.-M.; Yuan, F.; Liang, C.-S.; Liu, C.W.; Pan, T.-M.; Lu, S.C.; Hsieh, W.-Y.; Tsai, M.-J.; CHEE-WEE LIU | 2003 International Semiconductor Device Research Symposium, ISDRS 2003 | 0 | 0 | |
2003 | Isotope effect of hydrogen release in metal/oxide/n-silicon tunneling diodes | Lin, C. -H.; Yuan, F.; Hsu, B. -C.; Liu, C. W. | Solid-State Electronics | | |  |
2003 | Isotope effect of hydrogen release in metal/oxide/n-silicon tunneling diodes | Lin, C.-H.; Yuan, F.; Hsu, B.-C.; Liu, C.W.; CHEE-WEE LIU | Solid-State Electronics | 4 | 3 | |
2006 | Mechanical strain effect of n-channel polycrystalline silicon thin-film transistors | Huang, C.-F.; Yang, Y.-J.; Peng, C.-Y.; Yuan, F.; Liu, C. W. | Applied Physics Letters | | |  |
2006 | Mechanical strain effect of n-channel polycrystalline silicon thin-film transistors | Huang, C.-F.; YING-JAY YANG ; Peng, C.-Y.; Yuan, F.; CHEE-WEE LIU | Applied Physics Letters | 23 | 17 | |
2004 | Mechanically strained Si-SiGe HBTs | Yuan, F.; Jan, S.-R.; Maikap, S.; Liu, Y.-H.; Liang, C.-S.; Liu, C.W.; CHEE-WEE LIU | IEEE Electron Device Letters | 15 | 12 | |
2004 | Mechanically strained Si/SiGe HBTs | Yuan, F.; Jan, S.-R.; Maikap, S.; Liu, Y.-H.; Liang, C.-S.; Liu, C.W. | IEEE Electron Device Letters | | |  |
2004 | MEXTRAM modeling of Si-SiGe HPTs | Yuan, F.; Shi, J.-W.; Pei, Z.; Liu, C.W.; CHEE-WEE LIU | IEEE Transactions on Electron Devices | 14 | 13 | |
2003 | Mextram modeling of Si/SiGe heterojunction phototransistors | Yuan, F.; Pei, Z.; Shi, J.W.; Chang, S.T.; Liu, C.W.; CHEE-WEE LIU | 2003 International Semiconductor Device Research Symposium, ISDRS 2003 | 3 | 0 |  |
2007 | Mobility enhancement technology | Yuan, F.; Liu, C.W.; CHEE-WEE LIU | ICSICT-2006: 8th International Conference on Solid-State and Integrated Circuit Technology | 2 | 0 | |
2005 | Novel schottky barrier strained germanium PMOS | Peng, C.-Y.; Yuan, F.; Lee, M.H.; Yu, C.-Y.; Maikap, S.; Liao, M.H. ; Chang, S.T.; Liu, C.W. | 2005 International Semiconductor Device Research Symposium | 2 | | |
2005 | Novel schottky barrier strained germanium PMOS | Peng, C.-Y.; Yuan, F.; Lee, M.H.; Yu, C.-Y.; Maikap, S.; Liao, M.H.; Chang, S.T.; Liu, C.W.; CHEE-WEE LIU | 2005 International Semiconductor Device Research Symposium | | | |
2004 | Package-strain-enhanced device and circuit performance | Maikap, S.; Liao, M.H. ; Yuan, F.; Lee, M.H.; Huang, C.-F.; Chang, S.T.; Liu, C.W. | International Electron Devices Meeting | 21 | | |
2004 | Package-strain-enhanced device and circuit performance | Maikap, S.; Liao, M.H.; Yuan, F.; Lee, M.H.; Huang, C.-F.; Chang, S.T.; Liu, C.W.; CHEE-WEE LIU | International Electron Devices Meeting, IEDM | | | |