Results 1-20 of 114 (Search time: 0.768 seconds).

Issue DateTitleAuthor(s)SourcescopusWOSFulltext/Archive link
12012A Closed-form Analytical Transient Response Model for On-Chip Distortionless InterconnectT. C. Liu; J. B. Kuo; S. D. Zhang; JAMES-B KUO IEEE Transactions on Electron Devices 41
22012A compact analytic model of the strain field induced by through silicon viasJan, S.-R.; Chou, T.-P.; Yeh, C.-Y.; Liu, C.W.; Goldstein, R.V.; Gorodtsov, V.A.; Shushpannikov, P.S.; CHEE-WEE LIU IEEE Transactions on Electron Devices 1716
32001A comprehensive study of inversion current in MOS tunneling diodesLin, C.-H.; Hsu, B.-C.; Lee, M.H.; Liu, C.W.; CHEE-WEE LIU IEEE Transactions on Electron Devices 3533
42007A high-performance micromachined RF monolithic transformer with optimized pattern ground shields (OPGS) for UWB RFIC applicationsSHEY-SHI LU IEEE Transactions on Electron Devices 109
52001A PMOS tunneling photodetectorHsu, B.-C.; Liu, C.W.; Liu, W.T.; Lin, C.-H.; CHEE-WEE LIU IEEE Transactions on Electron Devices 2720
62002A simple method for measuring the cell gap of a reflective twisted nematic LCDZhu, X.; Choi, W.-K.; Wu, S.-T.; WING-KIT CHOI IEEE Transactions on Electron Devices 1615
72014A Surface-Field-Based Model for Nanowire MOSFETs with Spatial Variations of Doping ProfilesQ. Cheng; C. Y. Hong; J. B. Kuo; Y. J. Chen; JAMES-B KUO IEEE Transactions on Electron Devices 1617
81995Active Hollow Four Quadrant Orientation Detector Array for Application to Pattern RecognitionLin, K.-C.; Lee, S.-C.; SI-CHEN LEE IEEE Transactions on Electron Devices 30
92006Active-matrix amorphous-silicon TFTs arrays at 180 °C on clear plastic and glass substrates for organic light-emitting displaysI-CHUN CHENG ; A. Z. Kattamis; I-C. Cheng; H. Gleskova; S. Wagner; J. C. Sturm; M. Stevenson; G. Yu; M. O’Regan; I-CHUN CHENG IEEE Transactions on Electron Devices 2421
102012Additional Nitrogen Ion-Implantation Treatment in STI to Relax the Intrinsic Compressive Stress for n-MOSFETsLiao, M.-H.; Chen, Chih Hua; Chang, Li Cheng; Yang, Chen; Kao, Ssu Chieh; Liao, M.-H. IEEE Transactions on Electron Devices 76
112001(AlxGa1 x)0:5In0:5P/In0:15Ga0:85As (x = 0; 0:3; 1:0) Heterostructure Doped-Channel FETs for Microwave Power ApplicationsYang, Shih-Cheng; Chiu, Hsien-Chin; Chan, Yi-Jen; Lin, Hao-Hsiung ; Kuo, Jenn-MingIEEE Transactions on Electron Devices 
122005An Analysis of Base Bias Current Effect on SiGe HBTsLin, Yo-Sheng; Lu, Shey-Shi IEEE Transactions on Electron Devices 22
132003An analysis of small-signal gate-drain resistance effect on RF power MOSFETsSHEY-SHI LU IEEE Transactions on Electron Devices 1312
142002An analysis of the anomalous dip in scattering parameter S22 of InGaP-GaAs heterojunction bipolar transistors (HBTs)Tu, H.-Y.; Lin, Y.-S.; Chen, P.-Y.; Lu, S.-S.; Pan, H.-Y.; SHEY-SHI LU IEEE Transactions on Electron Devices 2419
152015An Analytic Surface-Field-Based Quasi-Atomistic Model for Nanowire MOSFETs with Random Dopant FluctuationsC. Hong; Q Cheng; P. Wang; L. Yang; Y. B. Kuo; Y. Chen; JAMES-B KUO IEEE Transactions on Electron Devices 55
162012An investigation on barrier inhomogeneities of 4H-SiC Schottky barrier diodes induced by surface morphology and trapsLee, K.-Y.; Huang, Y.-H.; Lee, Kung-Yen; Huang, Yan-Hao; KUNG-YEN LEE ; Lee, Kung-Yen ; Huang, Yan-HaoIEEE Transactions on Electron Devices 3531
172006An ultralow-loss and broadband micromachined RF inductor for RFIC input-matching applicationsWang, T.; Lin, Y.-S.; Lu, S.-S.; SHEY-SHI LU IEEE Transactions on Electron Devices 2719
182007Analysis of constitution and characteristics of lateral nonuniformity effects of MOS devices using QM-based Terman methodJENN-GWO HWU IEEE Transactions on Electron Devices 1010
192002An Analysis of the Anomalous Dip in Scattering Parameter of InGaP–GaAs Heterojunction Bipolar Transistors (HBTs)Tu, Hsing-Yuan; Lin, Yo-Sheng; Chen, Ping-Yu; Lu, Shey-Shi ; Pan, Hsuan-YuIEEE TRANSACTIONS ON ELECTRON DEVICES 
202006Analysis of the gate-source/drain capacitance behavior of a narrow-channel FD SOINMOS device considering the 3-D fringing capacitances using 3-D simulationC. C. Chen; J. B. Kuo; K. W. Su,; S. Liu; JAMES-B KUO IEEE Transactions on Electron Devices 32