Results 1-208 of 208 (Search time: 0.022 seconds).

Issue DateTitleAuthor(s)SourcescopusWOSFulltext/Archive link
12023The Advantages of Double Catalytic Layers for Carbon Nanotube Growth at Low Temperatures (<400 °C) in 3D Stacking and Power ApplicationsLin, Hong Yi; Basu, Nilabh; Lee, Min Hung; Chen, Sheng Chi; MING-HAN LIAO Coatings00
22023Reduction of Metal/Carbon Nano-Tubes Interface Contact Resistance by Floating Catalyst Growing Method and SemimetalsTsai, Y. T.; Basu, Nilabh; Chen, T.-W.; Chan, Y. C.; Lin, H.-Y.; Chen, S. C.; Lee, M. H.; MING-HAN LIAO IEEE Transactions on Electron Devices00
32023Two-Dimensionally Arranged Display Drivers Achieved by OS/Si StructureKomura, Yusuke; Miyata, Shoki; Okamoto, Yuki; Tamatsukuri, Yuki; Inoue, Hiroki; Saito, Toshihiko; Kozuma, Munehiro; Kobayashi, Hidetomo; Onuki, Tatsuya; Yanagisawa, Yuichi; Takeuchi, Toshihiko; Okazaki, Yutaka; Kunitake, Hitoshi; Nakamura, Daiki; Nagata, Takaaki; Yamane, Yasumasa; Ikeda, Makoto; Yen, Shih Ci; Chang, Chuan Hua; Hsieh, Wen Hsiang; Yoshida, Hiroshi; Chen, Min Cheng; MING-HAN LIAO ; Chang, Shou Zen; Yamazaki, ShunpeiDigest of Technical Papers - Symposium on VLSI Technology00
420234-Layer Wafer on Wafer Stacking Demonstration with Face to Face/Face to Back Stacked Flexibility Using Hybrid Bond/TSV-Middle for Various 3D IntegrationLu, C. L.; Chuang, C. H.; Huang, C. H.; Lin, S. C.; Chang, Y. H.; Lai, W. Y.; Chiu, M. H.; MING-HAN LIAO ; Chang, S. Z.Digest of Technical Papers - Symposium on VLSI Technology00
52022The demonstration of low-temperature (350 °C) grown carbon nano-tubes for the applications of through silicon via in 3D stacking and power-viaHSIN-YI LIN; Basu, Nilabh; Chen, S. C.; Lee, M. H.; MING-HAN LIAO Applied Physics Letters33
62022The Investigation of Electrical Characteristics for Carbon Nano-Tubes as Through Silicon Via in Multi-Layer Stacking Scheme With an Optimized StructureChen, K. C.; Basu, Nilabh; Chen, S. C.; Lee, M. H.; MING-HAN LIAO IEEE Transactions on Electron Devices45
72022Negative Schottky barrier height and surface inhomogeneity in n-silicon M-I-S structuresHarisha, C. P.; MING-HAN LIAO ; Kei, C. C.; Joshi, S.AIP Advances10
82022Oxide Semiconductor Field-Effect Transistor for High-Resolution Displays Capable of Deep Black DisplayOkazaki, Yutaka; Sawai, Hiromi; Endo, Masami; Motoyoshi, Ryousuke; Shimada, Daigo; Kunitake, Hitoshi; Yamazaki, Shunpei; Huang, Kou Chang; Yoshida, Hiroshi; Chen, Min Cheng; MING-HAN LIAO ; Chang, Shou ZenDigest of Technical Papers - SID International Symposium40
920221.5-inch, 3207-ppi Side-by-Side OLED Display Capable of 32-Division Driving with OSLSI/SiLSI Structure Fabricated by PhotolithographyKozuma, Munehiro; Okamoto, Yuki; Ito, Minato; Lnoue, Hiroki; Saito, Toshihiko; Komura, Yusuke; Miyata, Shoki; Toyotaka, Kouhei; Matsuzaki, Takanori; Onuki, Tatsuya; Kobayashi, Hidetomo; Sugaya, Kentaro; Fujie, Takahiro; Okazaki, Yutaka; Hodo, Ryota; Yanagisawa, Yuichi; Wakuda, Masahiro; Murakawa, Tsutomu; Sasagawa, Shinya; Kunitake, Hitoshi; Nakamura, Daiki; Nagata, Takaaki; Fukuzaki, Shinya; Aoyama, Tomoya; Kimura, Hajime; Yen, Shih Ci; Chang, Chuan Hua; Hsieh, Wen Hsiang; Yoshida, Hiroshi; Chen, Min Cheng; MING-HAN LIAO ; Chang, Shou Zen; Yamazaki, ShunpeiDigest of Technical Papers - SID International Symposium60
102022Layout of 1.50-inch, 3207-ppi oled display with oslsi/silsi structure capable of division driving fabricated through vlsi process with side-by-side patterning by photolithographySaito, Toshihiko; Mizuguchi, Toshiki; Okamoto, Yuki; Ito, Minato; Toyotaka, Kouhei; Kozuma, Munehiro; Matsuzaki, Takanori; Kobayashi, Hidetomo; Onuki, Tatsuya; Hiura, Yoshikazu; Hodo, Ryota; Sasagawa, Shinya; Kunitake, Hitoshi; Nakamura, Daiki; Sato, Hitomi; Kimura, Hajime; Wu, Chih Chiang; Yoshida, Hiroshi; Chen, Min Cheng; MING-HAN LIAO ; Chang, Shou Zen; Yamazaki, ShunpeiDigest of Technical Papers - SID International Symposium50
112022Multi-Layer Chips on Wafer Stacking Technologies with Carbon Nano-Tubes as Through-Silicon Vias and it's potential applications for Power-Via technologiesLiao, Bo Zhou; Chen, Liang Hsi; Chen, Kai Cheng; Lin, Hong Yi; Tsai, Yi Ting; Chen, Ting Wei; Chan, Yi Cheng; Lee, Min Hung; MING-HAN LIAO Proceedings - Electronic Components and Technology Conference30
122022The Demonstration of High-Quality Carbon Nanotubes as Through-Silicon Vias (TSVs) for Three-Dimensional Connection Stacking and Power-Via TechnologyYen C; Chang S; Chen K; Feng Y; Chen L; Liao B; Lee M; Chen S; Liao M.; MING-HAN LIAO IEEE Transactions on Electron Devices45
132021Performance characteristics of strained Ge p-FinFETs under the integration of lattice and self-heating stress enabled by process-oriented finite element simulationLee C.-C; Hsieh C.-P; Huang P.-C; Liao M.-H.; MING-HAN LIAO Applied Physics Express33
142021Multi-ferroic properties on bifeo3/batio3 multi-layer thin-film structures with the strong magneto-electric effect for the application of magneto-electric devicesHu C.-W; Yen C.-M; Feng Y.-C; Chen L.-H; Liao B.-Z; Chen S.-C; Liao M.-H.; MING-HAN LIAO Coatings66
152021In-Sn-Zn oxide nanocomposite films with enhanced electrical properties deposited by high-power impulse magnetron sputteringSun H; Li Z.-Y; Chen S.-C; Liao M.-H; Gong J.-H; Bai Z; Wang W.-X.; MING-HAN LIAO Nanomaterials33
162020The Demonstration of 3-D Bi 2.0 Te 2.7 Se 0.3 /Bi 0.4 Te 3.0 Sb 1.6 Thermoelectric Devices by Ionized Sputter SystemLiao, M.-H.; Huang, K.-C.; Su, W.-J.; Chen, S.-C.; Lee, M.-H.; MING-HAN LIAO ; WEI-JIUN SU IEEE Transactions on Electron Devices11
172020The real demonstration of High-Quality Carbon Nano-Tubes (CNTs) as the electrical connection for the potential application in a vertical 3D integrated technologyLu, P.-Y.; Li, Y.-R.; Yen, C.-M.; Hung, H.-T.; Kao, C.-R.; Pu, W.-C.; Chen, C.-C.A.; Lee, M.-H.; MING-HAN LIAO ; C. ROBERT KAO Proceedings - Electronic Components and Technology Conference40
182020The demonstration of carbon nanotubes (CNTs) as flip-chip connections in 3-D integrated circuits with an ultralow connection resistanceLiao, M.-H.; Lu, P.-Y.; Su, W.-J.; Chen, S.-C.; Hung, H.-T.; Kao, C.-R.; Pu, W.-C.; Chen, C.-C.A.; Lee, M.-H.; MING-HAN LIAO ; WEI-JIUN SU ; C. ROBERT KAO IEEE Transactions on Electron Devices66
192020The Investigation for Thickness-Dependent Electrical Performance on BaTiO3 /BiFeO3 Bilayer Ferromagnetic CapacitorsLien, C.; Hsieh, C.-F.; Wu, T.-C.; Yang, C.-S.; Lee, M.-H.; Xu, J.-J.; Hu, C.-W.; Huang, C.; Chang, S.-Z.; Liao, M.-H.; MING-HAN LIAO IEEE Transactions on Electron Devices33
202020p-type semi-transparent conductive NiO films with high deposition rate produced by superimposed high power impulse magnetron sputteringChuang, T.-H.; Wen, C.-K.; Chen, S.-C.; Liao, M.-H.; Liu, F.; Sun, H.; MING-HAN LIAO ; TUNG-HAN CHUANG Ceramics International1210
212020Double Layers Omega FETs with Ferroelectric HfZrO 2 for One-Transistor MemoryMING-HAN LIAO ; Chen, K.-T. et al.IEEE International Reliability Physics Symposium Proceedings20
222020The demonstration of Carbon Nano-Tubes (CNTs) as a promising high Aspect Ratio (>25) through Silicon Vias (TSVs) material for the vertical connection in the high dense 3DICsLu P.-Y; Yen C.-M; Chang S.-Y; Feng Y.-J; Lien C; Hu C.-W; Yao C.-W; Lee M.-H; Liao M.-H.; MING-HAN LIAO Technical Digest - International Electron Devices Meeting, IEDM40
232020Ferroelectric HfZrO2with Electrode Engineering and Stimulation Schemes as Symmetric Analog Synaptic Weight Element for Deep Neural Network TrainingHsiang K.-Y; MING-HAN LIAO et al. IEEE Transactions on Electron Devices3228
242019Bi-directional Sub-60mV/dec, Hysteresis-Free, Reducing Onset Voltage and High Speed Response of Ferroelectric-AntiFerroelectric Hf 0.25 Zr 0.75 O 2 Negative Capacitance FETsLee M.H; MING-HAN LIAO ; CHEE-WEE LIU Technical Digest - International Electron Devices Meeting, IEDM120
252019The Development of a Dynamic Model to Investigate the Dielectric Layer Thickness Effect for the Device Performance in Triboelectric NanogeneratorsLiao, M.-H.; Wu, C.-C.; Su, W.-J.; Chen, S.-C.; Lee, M.-H.; MING-HAN LIAO ; WEI-JIUN SU IEEE Transactions on Electron Devices53
262019Influence of sputtering power on the electrical properties of In-Sn-Zn oxide thin films deposited by high power impulse magnetron sputteringLi, Z.-Y.; Chen, S.-C.; Huo, Q.-H.; Liao, M.-H.; Dai, M.-J.; Lin, S.-S.; Yang, T.-L.; Sun, H.; MING-HAN LIAO Coatings45
272019Optoelectronic properties of Cu3N thin films deposited by reactive magnetron sputtering and its diode rectification characteristicsS.-C. Chen; S.-Y. Huang; S. Sakalley; A. Paliwal; Y.-H. Chen; M.-H. Liao; H. Sun; S. Biring; MING-HAN LIAO Journal of Alloys and Compounds
282019Non-Volatile Ferroelectric FETs Using 5-nm HfZrO with High Data Retention and Read Endurance for 1T Memory ApplicationsK.-T. Chen; H.-Y. Chen; C.-Y. Liao; G.-Y. Siang; C. Lo; M.-H. Liao; K.-S. Li; S. T. Chang; M.-H. Lee; MING-HAN LIAO IEEE Electron Device Letters
292019Ferro-electric HfZrO2 FETs for steep switch onsetK.-T. Chen; MING-HAN LIAO et al. Microelectronic Engineering
302019Ferroelectric HfZrO<inf>2</inf> FETs for steep switch onsetChen, K.-T.; Liao, C.-Y.; Chen, H.-Y.; Lo, C.; Siang, G.-Y.; Lin, Y.-Y.; Tseng, Y.-J.; Chang, C.; Chueh, C.-Y.; Yang, Y.-J.; Liao, M.-H.; Li, K.-S.; Chang, S.T.; Lee, M.H.; MING-HAN LIAO Microelectronic Engineering65
312019Improvement on Ferroelectricity and Endurance of Ultra-Thin HfZrO<inf>2</inf> Capacitor with Molybdenum Capping ElectrodeChen, K.-T.; Liao, C.-Y.; Lo, C.; Chen, H.-Y.; Siang, G.-Y.; Liu, S.; Chang, S.-C.; Liao, M.-H.; Chang, S.-T.; Lee, M.H.; MING-HAN LIAO 2019 Electron Devices Technology and Manufacturing Conference170
322019Comparison of microstructures and magnetic properties in FePt alloy films deposited by direct current magnetron sputtering and high power impulse magnetron sputteringYang, W.-S.; Sun, T.-H.; Chen, S.-C.; Jen, S.-U.; Guo, H.-J.; Liao, M.-H.; Chen, J.-R.; MING-HAN LIAO Journal of Alloys and Compounds76
332019Optoelectronic properties of Cu<inf>3</inf>N thin films deposited by reactive magnetron sputtering and its diode rectification characteristicsChen, S.-C.; Huang, S.-Y.; Sakalley, S.; Paliwal, A.; Chen, Y.-H.; Liao, M.-H.; Sun, H.; Biring, S.; MING-HAN LIAO Journal of Alloys and Compounds2523
342019Non-Volatile Ferroelectric FETs Using 5-nm Hf<inf>0.5</inf>Zr<inf>0.5</inf>O<inf>2</inf> with High Data Retention and Read Endurance for 1T Memory ApplicationsChen, K.-T.; Chen, H.-Y.; Liao, C.-Y.; Siang, G.-Y.; Lo, C.; Liao, M.-H.; Li, K.-S.; Chang, S.T.; Lee, M.H.; MING-HAN LIAO IEEE Electron Device Letters6969
352018Planarization, Fabrication and Characterization of Three-dimensional Magnetic Field SensorsM. H.Liao ; Van Su Luong; Yu-Hsin Su; Chih-Cheng Lu; Jen-Tzong Jeng; Jen-Hwa Hsu; Jong-Ching Wu; Meng-Huang Lai; Ching-Ray ChangIEEE Transaction on Nanotech 
362018Ferroelectric Characteristics of Ultra-thin Hf <inf>1-x</inf> Zr <inf>x</inf> O <inf>2</inf> Gate Stack and 1T Memory Operation ApplicationsLee, M.H.; Kuo, C.Y.; Tang, C.-H.; Chen, H.-H.; Liao, C.-Y.; Hong, R.-C.; Gu, S.-S.; Chou, Y.-C.; Wang, Z.-Y.; Chen, S.-Y.; Chen, P.-G.; Liao, M.-H. ; Li, K.-S.2018 IEEE Electron Devices Technology and Manufacturing Conference20
372018Steep switch-off of In <inf>0.18</inf> Al <inf>0.82</inf> N/AlN/GaN on Si MIS-HEMTChen, P.-G.; Chou, Y.-C.; Gu, S.-S.; Hong, R.-C.; Wang, Z.-Y.; Chen, S.-Y.; Liao, C.-Y.; Tang, M.,; Liao, M.-H. ; Lee, M.H.2018 7th International Symposium on Next-Generation Electronics00
382018Thickness dependence of electrical conductivity and thermo-electric power of Bi<inf>2.0</inf>Te<inf>2.7</inf>Se<inf>0.3</inf>/Bi<inf>0.4</inf>Te<inf>3.0</inf>Sb<inf>1.6</inf> thermo-electric devicesLiao, M.-H.; Huang, K.-C.; Tsai, F.-A.; Liu, C.-Y.; Lien, C.; Lee, M.-H.; MING-HAN LIAO AIP Advances99
392018Retraction notice to “The demonstration of a high efficient SiGe Type-II hetero-junction solar cell with an optimal stress design” [Thin Solid Films, 544 (2013) 112-115](S0040609013007360)(10.1016/j.tsf.2013.04.100)MING-HAN LIAO ; MING-HAN LIAO Thin Solid Films00
402018The Demonstration of High-Performance Multilayer BaTiO3/BiFeO3 Stack MIM CapacitorsC. Lien; C.-F. Hsieh; H.-S. Wu; T.-C. Wu; S.-J. Wei; Y.-H. Chu; M.-H. Liao; M.-H. Lee; MING-HAN LIAO IEEE Transactions on Electron Devices
412018Thickness dependence of electrical conductivity and thermo-electric power of Bi2.0Te2.7Se0.3/Bi0.4Te3.0Sb1.6 thermo-electric devicesM. H.Liao ; K.-C. Huang; F.-A. Tsai; C.-Y. Liu; C. Lien; M.-H. LeeAIP Advances 
422018Synthesis and characterization of n-type NiO:Al thin films for fabrication of p-n NiO homojunctionsM. H.Liao ; H. Sun; S.-C. Chenh; P.-C. Ling; S.-M. SongJournal of Physics D: Applied Physics
432018Sub-60mV/dec Subthreshold Swing on Reliability of Ferroelectric HfZrOx Negative-Capacitacne FETs with DC Sweep and AC Stress CyclesM. H.Liao ; K.-T. Chen; C.-Y. Liao; R.-C. Hong; S.-S. Gu; Y.-C. Chou; Z.-Y. Wang; S.-Y.Chen; G.-Y. Siang; H.-Y. Chen; C. Lo; P.-G. Chen; Y.-J. Lee; K.-S.Li; S. T. Chang; M. H. Lee2018 International Conference on Solid State Devices and Materials
442018The demonstration of high-performance multilayer BaTiO <inf>3</inf> /BiFeO <inf>3</inf> stack MIM capacitorsLien, C.; Hsieh, C.-F.; Wu, H.-S.; Wu, T.-C.; Wei, S.-J.; Chu, Y.-H.; Liao, M.-H. ; Lee, M.-H.IEEE Transactions on Electron Devices99
452018Planarization, Fabrication, and Characterization of Three-Dimensional Magnetic Field SensorsLuong, V.S.; Su, Y.-H.; Lu, C.-C.; Jeng, J.-T.; Hsu, J.-H.; Liao, M.-H.; Wu, J.-C.; Lai, M.-H.; CHING-RAY CHANG ; Liao, M.-H. IEEE Transactions on Nanotechnology2121
462018Ferroelectric HfZrOx FETs on SOI Substrate with Reverse-DIBL (Drain-Induced Barrier Lowering) and NDR (Negative Differential Resistance)K.-T. Chen; MING-HAN LIAO et al. IEEE Journal of the Electron Devices Society
472018Ferroelectric HfZrO&amp;#x2093; FETs on SOI Substrate with Reverse-DIBL (Drain-Induced Barrier Lowering) and NDR (Negative Differential Resistance)Chen, K.; Gu, S.; Wang, Z.; Liao, C.; Chou, Y.; Hong, R.; Chen, S.; Chen, H.; Siang, G.; Le, J.; Chen, P.; Liao, M.; Li, K.; Chang, S.T.; MING-HAN LIAO ; MING-HAN LIAO IEEE Journal of the Electron Devices Society1514
482018Ferroelectric Al:HfO <inf>2</inf> negative capacitance FETsLee, M.H.; Chen, P.-G.; Fan, S.-T.; Chou, Y.-C.; Kuo, C.-Y.; Tang, C.-H.; Chen, H.-H.; Gu, S.-S.; Hong, R.-C.; Wang, Z.-Y.; Chen, S.-Y.; Liao, C.-Y.; Chen, K.-T.; Chang, S.T.; Liao, M.-H. ; Li, K.-S.; CHEE-WEE LIU International Electron Devices Meeting220
492018Monolithic integration of GaN-based light-emitting diodes and metal-oxide-semiconductor field-effect transistors: ReplyLee, Y.-J.; Yang, Z.-P.; Chen, P.-G.; Hsieh, Y.-A.; Yao, Y.-C.; Liao, M.-H.; Lee, M.-H.; Wang, M.-T.; Hwang, J.-M.; MING-HAN LIAO Optics Express00
502017Performance Enhancement for the Triboelectric Energy Harvester by using interfacial microdome array structuresM. H.Liao ; H.-I. Huang; C.-C. ChuangApplied Physics Letters
512017The achievement of the super short channel control in the magnetic Ge nFinFETs with the negative capacitance effectM. H.Liao ; H.-Y. Huang; F.-A. Tsai; C.-C. Chuang; M.-H. Hsu; C.-C. Lee; M.-H. Lee; C. Lien; C.-F. Hsieh; T.-C. Wu; H.-S. Wu; C.-W. YaoVacuum 
522017The systematic investigation of self-heating effect on CMOS Logic transistors from 20 nm to 5 nm technology nodes by experimental thermo-electric measurements and finite element modelingM. H.Liao ; C.-P. Hsieh; C.-C. LeeIEEE Transactions on Electron Devices 
532017The effect of CESL and dummy poly gate for n-type MOSFETs with short Si0.75Ge0.25 channel.M. H.Liao ; H.-W. Hsuh; C.-C. LeeVacuum 
542017Ferroelectric Al:HfO2 Negative Capacitance FETsM. H.Liao ; M. H. Lee; P.-G. Chen; S.-T. Fan; Y.-C. Chou; C.-Y. Kuo; C.-H. Tang; H.-H.Chen; S.-S. Gu; R.-C. Hong; Z.-Y. Wang; S.-Y. Chen; C.-Y. Liao; K.-T. Chen; S.T. Chang; K.-S. Li; C. W. LiuInternational Electron Devices Meeting
552017In0.18Al0.82N/AlN/GaN HEMT on Si with Hybrid Ohmic and Schottky Source/Drain Solid State ElectronicsM. H.Liao ; P.-G. Chen; M. Tang; M. H. LeeSolid State Electronics 
562017The effect of CESL and dummy poly gate for n-type MOSFETs with short Si<inf>0.75</inf>Ge<inf>0.25</inf> channelLee, C.-C.; Hsu, H.-W.; Liao, M.-H.; MING-HAN LIAO Vacuum11
572017The investigation of self-heating effect on Si1-xGex FinFETs with different device structures, Ge concentration, and operated voltagesM.-H. Liao; C.-P. Hsieh; C.-C. Lee; MING-HAN LIAO AIP Advances
582017Physical thickness 1.x nm ferroelectric HfZrOx negative capacitance FETsLee, M.H.; Fan, S.-T.; Tang, C.-H.; Chen, P.-G.; Chou, Y.-C.; Chen, H.-H.; Kuo, J.-Y.; Xie, M.-J.; Liu, S.-N.; Liao, M.-H. ; Jong, C.-A.; Li, K.-S.; Chen, M.-C.; Liu, C.W.International Electron Devices Meeting910
592017The investigation of selfheating effect on Si1-xGex FinFETs with different device structures, Ge concentration, and operated voltagesM. H.Liao ; C.-P. Hsieh; C.-C. LeeAIP Advances 
602017Systematic Investigation of Self-Heating Effect on CMOS Logic Transistors from 20 to 5 nm Technology Nodes by Experimental Thermoelectric Measurements and Finite Element ModelingLiao, M.-H. ; Hsieh, C.-P.; Lee, C.-C.IEEE Transactions on Electron Devices1415
612017Green energy computing of heterojunction with intrinsic thin layer (HIT) solar cell by CAD (Computer aided design)Lee, M.H.; Liao, M.H. ; Tai, C.-W.; Chang, S.T.Future Technologies Conference00
622017Negative capacitance FETs with steep switching by ferroelectric Hf-based oxideMING-HAN LIAO ; CHEE-WEE LIU 2017 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 201740
632017Performance enhancement for the triboelectric energy harvester by using interfacial micro-dome array structuresLiao, M.-H.; Huang, H.-Y.; Chuang, C.-C.; MING-HAN LIAO Applied Physics Letters1112
642017The achievement of the super short channel control in the magnetic Ge n-FinFETs with the negative capacitance effectLiao, M.-H.; Huang, H.-Y.; Tsai, F.-A.; Chuang, C.-C.; Hsu, M.-H.; Lee, C.-C.; Lee, M.-H.; Lien, C.; Hsieh, C.-F.; Wu, T.-C.; Wu, H.-S.; Yao, C.-W.; MING-HAN LIAO Vacuum00
652017In <inf>0.18</inf> Al <inf>0.82</inf> N/AlN/GaN MIS-HEMT on Si with Schottky-drain contactChen, P.-G.; Tang, M.; Liao, M.-H.; MING-HAN LIAO ; MING-HAN LIAO Solid-State Electronics55
662017The investigation of self-heating effect on Si<inf>1-x</inf>Ge<inf>x</inf> FinFETs with different device structures, Ge concentration, and operated voltagesLiao, M.-H.; Hsieh, C.-P.; Lee, C.-C.; MING-HAN LIAO AIP Advances11
672016STI Geometric Influence of a Recessed Surface on Array-type Arrangements of Nano-scaled Devices Strained by CESL and Ge-based StressorsM. H.Liao ; C. C. Lee; C.-P. Hsieh; P.-C. Huang; S.-W. ChengThin Solid Films 
682016Narrow channel width effect modificati on in a shallow trench isolation deviceM. H.Liao ; T.L. Lee
692016MOS Devices with UltraHigh Dielectric Constants and Methods of Forming the SameM.H.Liao ; M.Hongh
702016Isolation Region Implant and StructureM. H.Liao ; T.L. Lee
712016Simulation-based study of negative-capacitance double-gate tunnel field-effect transistor with ferroelectric gate stackLiu, C.; Chen, P.-G.; Xie, M.-J.; Liu, S.-N.; Lee, J.-W.; Huang, S.-J.; Liu, S.; Chen, Y.-S.; Lee, H.-Y.; Liao, M.-H. ; Chen, P.-S.; Lee, M.-H.Japanese Journal of Applied Physics3123
722016MAGNET IC CAPACIT OR STRUCT URESM.H.Liao ; C.Hsieh; C.Chen
732016PET imaging of serotonin transporters with 4-[ 18 F]-ADAM in a parkinsonian rat model with porcine neural xenograftsChiu C.-H.; Li I.-H.; Weng S.-J.; Huang Y.-S.; Wu S.-C.; Chou T.-K.; Huang W.-S.; Liao M.-H.; Shiue C.-Y.; Cheng C.-Y.; SHINN-CHIH WU ; Liao, M.-H. Cell Transplantation76
742016Comprehensive investigation on array-type dummy active diffused region and gate geometries using narrow NMOSFETs with SiC S/D stressorsLee, Chang Chun; Cheng, Sen Wen; Hsieh, Chia Ping; Liao, Ming Han; Guo, Yu Huan; MING-HAN LIAO International Journal of Nanotechnology00
752016The investigation of the diameter dimension effect on the Si nano-tube transistorsM. H.Liao ; C.-H. Yeh; C.-C. Lee; C.-P. WangAIP Advances0
762016Ge1-xSix on Ge-Based N-Type Metal-Oxide Semiconductor Field-Effect Transistors by Device Simulation Combined with High-Order StressPiezoresistive RelationshipsM. H.Liao ; C.-C. Lee; C.-P. Hsieh; P.-C. Huang; S.-W. ChengThin Solid Films 
772016SEMICO NDUCTO R DEVICE AND METHOD OF FORMAT IONM. H.Liao 
782016Shallow trench isolation geometric influence of a recessed surface on array-type arrangements of nano-scaled devices strained by contact etch stop liner and Ge-based stressorsHsieh, C.-P.; Liao, M.-H.; Lee, C.-C.; Cheng, T.-C.; Wang, C.-P.; Huang, P.-C.; Cheng, S.-W.; MING-HAN LIAO Thin Solid Films00
792016Ge<inf>1 - X</inf>Si<inf>x</inf> on Ge-based n-type metal-oxide semiconductor field-effect transistors by device simulation combined with high-order stress-piezoresistive relationshipsLee, C.-C.; Hsieh, C.-P.; Huang, P.-C.; Cheng, S.-W.; Liao, M.-H.; MING-HAN LIAO Thin Solid Films32
802016Effects of array type of dummy active diffused region and gate geometries on narrow NMOSFETs with SiC S/D stressorsLee, C.-C.; Hsieh, C.-P.; Liao, M.-H. ; Cheng, S.-W.; Guo, Y.-H.2014 IEEE International Nanoelectronics Conference10
812016STI stress modulation with additional implantati on and natural pad sin maskM. H.Liao ; T.L. Lee; L.-Y.Yeh; M.S.Liang
822015The demonstration of the magnetic Ge metal-oxide-semiconductor field-effect transistorM. H.Liao ; S.-C. HuangAIP Advances 
832015~20% Idsat improvement in the Si 3D FinFET with the implement of D-SMT processM. H.Liao ; P.-G. Chen; C. P. Hsieh9th International Conference on Silicon Epitaxy and Heterostructures
842015Prospects for Ferroelectric HfZrOx FETs with Experimentally CET=0.98nm,SSfor=42mV/dec, SSrev=28mV/dec, Switch-OFF <0.2V, and Hysteresis-Free StrategiesM. H. Lee; MING-HAN LIAO et al. IEEE Electron Device Meeting (IEDM) 2015
852015A non-linear analytic stress model for the analysis on the stress interaction between TSVsLiao, M.-H. ; Kao, S.-C.; Huang, S.-J.International Journal of Automation and Smart Technology00
862015The comprehensive study and the reduction of contact resistivity on the n-InGaAs MIS contact system with different inserted insulatorsM. H.Liao ; C. LienAIP Advances 
872015利用拉曼光譜檢測半導體缺陷技術廖洺漢 ; 陳畤華; 謝卓帆
882015The high performance Ge Metal-Oxide-Semiconductor Field-Effect Transistor with the magnetic metal gateM. H.Liao ; S.-C. Huangn; C. P. Hsieh9th International Conference on Silicon Epitaxy and Heterostructures
892015The demonstration of promising Ge ntype multi-gate-FETs with the magnetic FePt metal gate schemeM. H.Liao ; P.-G. ChenApplied Physics Letters
902015The demonstration of the Si nano-tube device with the promising short channel controlM. H.Liao ; P.-G. ChenJournal of Applied Physics
912015The demonstration of dislocation-stress memorization technique stressor on Si n-FinFETsM. H.Liao ; P.-G. ChenIEEE Transactions on Nanotechnology21
922015Publisher's note: "Optimization of dislocation edge stress effects for Si N-type metal-oxide-semiconductor field-effect transistors" [Jpn. J. Appl. Phys. 52, 04CC20 (2013)]Liao, M.-H. ; Chen, C.-H.; Chang, L.-C.; Yang, C.; Yu, M.-A.; Liu, G.-H.; Kao, S.-C.Japanese Journal of Applied Physics00
932015The dependency of different stress-level SiN capping films and the optimization of D-SMT process for the device performance booster in Ge n-FinFETsM. H.Liao ; P.-G. ChenApplied Physics Letters
942015Prospects for Ferroelectric HfZrOx FETs with Experimentally CET=0.98nm,SSfor=42mV/dec, SSrev=28mV/dec, Switch-OFFM. H.Liao ; M. H. Lee; P.-G. Chen; C. Liu; K-Y. Chu; C.-C. Cheng; M.-J. Xie; S.-N. Liu; J.-W. Lee; S.-J. Huang; M. Tang; K.-S. Li; M.-C. ChenIEEE Electron Device Meeting
952015Sub-60mV-Swing Negative-Capacitance FinFET without HysteresisM. H.Liao ; K. S. Li; P.-G. Chen; T. Y. Lai; C. H. Lin; C.-C. Cheng; C. C. Chen; M. H. Lee; M. C. Chen; J. M. Sheih; W. K. Yeh; F. L. Yang; Sayeef Salahuddin; Chenming HuIEEE Electron Device Meeting2330
962015Prospects for ferroelectric HfZrOx FETs with experimentally CET=0.98nm, SS<inf>for</inf>=42mV/dec, SS<inf>rev</inf>=28mV/dec, switch-off &lt;0.2V, and hysteresis-free strategiesLee, M.H.; Chen, P.-G.; Liu, C.; Chu, K.-Y.; Cheng, C.-C.; Xie, M.-J.; Liu, S.-N.; Lee, J.-W.; Huang, S.-J.; Liao, M.-H. ; Tang, M.; Li, K.-S.; Chen, M.-C.International Electron Devices Meeting870
972015Erratum to "Additional Nitrogen Ion-Implantation Treatment in STI to Relax the Intrinsic Compressive Stress for n-MOSFETs"Liao, M.-H.; Chen, C.H.; Chang, L.C.; Yang, C.; MING-HAN LIAO ; MING-HAN LIAO IEEE Transactions on Electron Devices11
982015The comprehensive study and the reduction of contact resistivity on the n-InGaAs M-I-S contact system with different inserted insulatorsLiao, M.-H.; Lien, C.; MING-HAN LIAO AIP Advances1210
992015Erratum: The novel chamber hardware design to improve the thin film deposition quality in both 12″ (300 mm) and 18″ (450 mm) wafers with the development of 3D full chamber modeling and experimental visual technique; (AIP Advances (2013) 3:7 (072117))Liao, M.-H.; MING-HAN LIAO ; MING-HAN LIAO AIP Advances00
1002015The demonstration of a D-SMT stressor on Ge planer n-MOSFETsM. H.Liao ; P.-G. ChenAIP Advances 
1012015The demonstration of the novel nanotube Si device with the promising device performance behaviorM. H.Liao ; C. P. Hsieh9th International Conference on Silicon Epitaxy and Heterostructures
1022015The demonstration of promising Ge n-type multi-gate-field-effect transistors with the magnetic FePt metal gate schemeLiao, M.-H.; Huang, S.C.; MING-HAN LIAO Applied Physics Letters63
1032014The demonstration of D-SMT stressor on Si and Ge n-FinFETsLiao, M.-H. ; Chen, P.G.; Huang, S.C.; Kao, S.C.; Hung, C.X.; Liu, K.H.; Lien, C.; Liu, C.Y.Symposium on VLSI Technology60
1042014Optimized Si <inf>0.5</inf> Ge <inf>0.5</inf> /Si interface quality by the process of low energy hydrogen plasma cleaning and investigation by Positron Annihilation spectroscopyHsieh, C.F.; Chen, C.W.; Chen, C.H.; Liao, M.H. Procedia Engineering00
1052014The demonstration of colossal magneto-capacitance effect with the promising gate stack characteristics on Ge (100) by the magnetic gate stack designM. H.Liao ; S.-C. HuangApplied Physics Letters
1062014The demonstration of colossal magneto-capacitance and “negative” capacitance effect with the promising characteristics of Jg-EOT and transistor’s performance on Ge (100) n-FETs by the novel magnetic gate stack scheme designM.-H. Liao; S. C. Huang; C. Y. Liu; P. G. Chen; S. C. Kao; C. Lien; MING-HAN LIAO 2014 Symposium on VLSI Technology (VLSI-technology)
1072014Periodic nanostructured thin-film solar cellsHsieh, C.-F.; Wu, H.-S.; Wu, T.-C.; Liao, M.-H. Advanced Materials Research00
1082014High κ/InGaAs for ultimate CMOS - Interfacial passivation, low ohmic contacts, and device performance (Invited)Chang, W.H.; Lin, T.D.; Liao, M.H. ; Pi, T.W.; Kwo, J.; Hong, M.ECS Transactions10
1092014Stress and curvature of periodic trench structures on Sapphire substrate with GaN filmHsieh, C.F.; Chen, C.W.; Chen, C.H.; Liao, M.H. Procedia Engineering00
1102014The improving Si <inf>0.5</inf> Ge <inf>0.5</inf> /Si interface quality through a low energy hydrogen plasma cleaning process and positron annihilation spectroscopyHsieh, C.-F.; Chen, C.-W.; Chen, C.-H.; Liao, M.-H. International Journal of Automation and Smart Technology00
1112014The demonstration of colossal magneto-capacitance and 'negative' capacitance effect with the promising characteristics of Jg-EOT and transistor's performance on Ge (100) n-FETs by the novel magnetic gate stack scheme designLiao, M.-H. ; Huang, S.C.; Liu, C.Y.; Chen, P.G.; Kao, S.C.; Lien, C.Symposium on VLSI Technology40
1122014Monolithic integration of GaN-based light- emitting diodes and metal-oxide-semiconductor field-effect transistorsM. H.Liao ; Y.-J. Lee; Z.-P. Yang; P.-G. Chen; Y.-A. Hsieh; Y.-C. Yao; M.-H. Lee; M.-T. Wang; J.-M. HwangOptics Express 
1132014Analyzing Si-SiGe thin-film solar cell by simulation and calculationHsieh, C.-F.; Li, Y.-T.; Wu, H.-S.; Wu, T.-C.; Liao, M.H. 2014 IEEE 40th Photovoltaic Specialist Conference00
1142014Monolithic integration of GaN-based lightemitting diodes and metal-oxide-semiconductor field-effect transistorsLee, Y.-J.; Yang, Z.-P.; Chen, P.-G.; Hsieh, Y.-A.; Yao, Y.-C.; Liao, M.-H.; Lee, M.-H.; Wang, M.-T.; Hwang, J.-M.; MING-HAN LIAO Optics Express5954
1152013The novel chamber hardware design to improve the thin film deposition quality in both 12? (300 mm) and 18? (450 mm) wafers with the development of 3D full chamber modeling and experimental visual techniqueLiao, M.-H. ; Chen, C.-H.; Kao, S.-C.International Journal of Heat and Mass Transfer11
1162013The novel chamber hardware design to improve the thin film deposition quality in both 12 <sup>?</sup> (300 mm) and 18 <sup>?</sup> (450 mm) wafers with the development of 3D full chamber modeling and experimental visual techniqueLiao, M.-H.; Chen, C.-H.; MING-HAN LIAO AIP Advances43
1172013Experimental demonstration on the ultra-low source/drain resistance by metal-insulator-semiconductor contact structure in In<inf>0.53</inf>Ga <inf>0.47</inf>As field-effect transistorsLiao, M.-H.; Chen, P.-K.; MING-HAN LIAO AIP Advances76
1182013The demonstration of a highly efficient SiGe Type-II hetero-junction solar cell with an optimal stress designMING-HAN LIAO ; MING-HAN LIAO Thin Solid Films55
1192013The demonstration of nonlinear analytic model for the strain field induced by thermal copper filled TSVs (through silicon via)M. H.Liao ; G.-H. Liu; M.-Y. Yu; C.-H. Chen; C.-X. HongAIP Advances32
1202013CVD chamber design to improve deposition quality in both 300- and 450- mm wafers with 3D-chamber modeling and experimental visual techniqueM. H.Liao ; C.-H. Chen; S.-C. Kao; M.-C. Huange-Manufacturing & Design Collaboration Symposium 
1212013The relaxation of stress and reduction of KOZ by the special designed trench structure near the TSV for the application of 3-DICsM. H.Liao ; M.-Y. Yu; G.-H. Liu; C.-H. Chen; C.-X. HongAsia-Pacific Radio Science Conference 
1222013Nonlinear analytic model for the strain field induced by thermal copper filled TSVsM. H.Liao ; C.-H. Chen; J.-J. Lee; K.-C. Chen; J.-H. Liange-Manufacturing & Design Collaboration Symposium 
1232013Improved Si0.5Ge0.5/Si interface quality achieved by the process of low energy hydrogen plasma cleaning and investigation of interface quality with positron annihilation spectroscopyM. H.Liao ; C.-H. ChenAIP Advances 
1242013Studies of boron diffusivities on (001) and (110) substrate orientation in Si and Ge along vertical/out-of plane and lateral/in-plane directions studyM. H.Liao Thin Solid Films 
1252013Solar cell composed of periodic nano-structure and SiGe/Si thin filmHsieh, C.-F.; Wu, H.-S.; Wu, T.-C.; Liao, M.H. Conference Record of the IEEE Photovoltaic Specialists Conference00
1262013Residual stress of curvature sapphire substrate with GaN film released by the application of trench structuresLiao, M.-H.; Lee, J.-J.; Chen, C.-H.; Kao, S.-C.; Chen, K.-C.; JYH-JONE LEE ; Liao, M.-H. International Journal of Automation and Smart Technology00
1272013The demonstration of nonlinear analytic model for the strain field induced by thermal copper filled TSVs (through silicon via)Liao, M.-H.; Chen, C.-H.; Lee, J.J.; Chen, K.C.; JYH-JONE LEE ; Liao, M.-H. 2013 e-Manufacturing and Design Collaboration Symposium00
1282013Experimental demonstration for ultralow on-resistance in raised source/drain In0.53Ga0.47As QW-MOSFETs withimplant-free processM. H.Liao ; P.-G. ChenJournal of Physics D: Applied Physics
1292013Relaxation of Residual Stress in Bent GaN Film on Sapphire Substrate by Laser Treatment With an Optimized Surface Structure DesignM. H.Liao ; C. H. Chen; L.-C. Chang; S. C. Kao; M.-Y. Yu; G.-H. Liu; M.-C.HuangIEEE Transaction on Electron Devices1
1302013Optimization of dislocation edge stress effects for si n-type metal-oxide-semiconductor field-effect transistorsLiao, M.-H. ; Chen, C.-H.; Chang, L.-C.; Yang, C.; Yu, M.-Y.; Liu, G.-H.; Kao, S.-C.Japanese Journal of Applied Physics01
1312013The chemical vapor deposition chamber design to improve the thin film deposition quality in both 12? (300 mm) and 18? (450 mm) wafers with the development of 3D chamber modeling and experimental visual techniqueLiao, M.-H. ; Chen, C.-H.; Kao, S.-C.; Huang, M.-C.2013 e-Manufacturing and Design Collaboration Symposium00
1322013The reduction of keep-out zone (?10×) by the optimized novel trench structures near the through silicon vias for the application in 3-dimensional integrated circuitsLiao, M.H.; MING-HAN LIAO Journal of Applied Physics77
1332013Effect of hydrogen participation on the improvement in electrical characteristics of HfO2 gate dielectrics by post-deposition remote N2, N2/H2, and NH3 plasma treatmentsHuang L.-T.; Chang M.-L.; Huang J.-J.; Kuo C.-L.; Lin H.-C.; Liao M.-H.; Lee M.-H.; HSIN-CHIH LIN ; MING-HAN LIAO ; CHIN-LUNG KUO ; MIIN-JANG CHEN Journal of Physics D: Applied Physics107
1342013Experimental demonstration for the implant-free In<inf>0.53</inf>Ga <inf>0.47</inf>As quantum-well metal-insulator-semiconductor field-effect transistors with ultra-low source/drain resistanceLiao, M.-H.; Chang, L.C.; MING-HAN LIAO Applied Physics Letters97
1352013Experimental demonstration for ultra-low on-resistance in raised source/drain In<inf>0.53</inf>Ga<inf>0.47</inf>As QW-MOSFETs with implant-free processLiao, M.-H.; Chan, P.-G.; MING-HAN LIAO Journal of Physics D: Applied Physics11
1362013Improved Si<inf>0.5</inf>Ge<inf>0.5</inf>/Si interface quality achieved by the process of low energy hydrogen plasma cleaning and investigation of interface quality with positron annihilation spectroscopyLiao, M.-H.; Chen, C.-H.; MING-HAN LIAO AIP Advances00
1372013Optimized surface structure by laser treatment for the relaxation of residual stress in bent GaN filmChen, C.-H.; Liao, M.-H.; Chang, L.-C.; Kao, S.-C.; Yang, C.; Yu, M.-Y.; Liu, G.-H.; MING-HAN LIAO Journal of Physics D: Applied Physics00
1382013The special trench design near the through silicon vias (TSVs) to reduce the keep-out zone for application in three-dimensional integral circuitsLiao, M.-H.; MING-HAN LIAO Journal of Physics D: Applied Physics22
1392012Optimal Si-SiGe hetero-structure thin-film solar cell with theoretical calculation and quantitative analysisM.-H. Liao; C.-H. Chen; L.-C. Chang; C. Yang; S.-C. Kao; C.-F. Hsieh; MING-HAN LIAO 2012 International Conference on Solid State Devices and Materials (SSDM)
1402012SiGe Quantum Well Metal-Insulator-Semiconductor Light-Emitting DiodesM.-H. Liao; C.-H. Chen; L.-C. Chang; C. Yang; S.-C. Kao; C.-F. Hsieh; MING-HAN LIAO 2012 International Conference on Solid State Devices and Materials (SSDM)
1412012Nano-textured photonic crystal light-emitting diodes and solar cellsM.-H. Liao; C.-H. Chen; L.-C. Chang; C. Yang; S.-C. Kao; C.-F. Hsieh; MING-HAN LIAO 2012 International Conference on Solid State Devices and Materials (SSDM)
1422012Studies of boron diffusivities on (001) and (110) substrate orientation in Si and Ge along vertical/out-of plane and lateral/in-plane directions by SIMS and C-V measurement on the designed test patternM.-H. Liao; MING-HAN LIAO The 6th International Conference on Technological Advances of Thin Films & Surface Coatings
1432012The Systematic Study and Simulation Modeling on Dislocation Edge Stress Effects for Si N-MOSFETsM.-H. Liao; MING-HAN LIAO The 6th International Conference on Technological Advances of Thin Films & Surface Coatings
1442012A Novel Stress Design for the Type-II Hetero-Junction Solar Cell with Superior PerformanceM.-H. Liao; MING-HAN LIAO The 6th International Conference on Technological Advances of Thin Films & Surface Coatings
1452012The investigation on Dislocation Edge Stress Effects for Si N-MOSFETsM.-H. Liao; C.-H. Chen; L.-C. Chang; C. Yang; S.-C. Kao; C.-F. Hsieh; MING-HAN LIAO 2012 International Conference on Solid State Devices and Materials (SSDM)
1462012Local stress determination in Shallow Trench Insulator structures with one-side and two-sides Pad-SiN layer by Polarized micro-Raman spectroscopy extraction and mechanical modelizationM.-H. Liao; MING-HAN LIAO The 6th International Conference on Technological Advances of Thin Films & Surface Coatings
1472012A novel stress design for the type-II hetero-junction solar cell with superior performanceLiao, M.-H.; Chen, C.-H.; Chang, L.-C.; Yang, C.; LiaoMH ; ChenCH Journal of Applied Physics64
1482012Additional Nitrogen Ion-Implantation Treatment in STI to Relax the Intrinsic Compressive Stress for n-MOSFETsLiao, M.-H.; Chen, Chih Hua; Chang, Li Cheng; Yang, Chen; Kao, Ssu Chieh; Liao, M.-H. IEEE Transactions on Electron Devices76
1492012The systematic study and simulation modeling on nano-level dislocation edge stress effectsLiao, M.-H.; Chen, C.-H.; Chang, L.-C.; Yang, C.; LiaoMH ; ChenCH Journal of Applied Physics105
1502012The relaxation of intrinsic compressive stress in complementary metal-oxide-semiconductor transistors by additional N ion implantation treatment with atomic force microscope-Raman stress extractionLiao, M-H; Chen, C-H; Chang, L-C; Yang, C.; Kao, S-C; LiaoMH ; ChenCH Journal of Applied Physics148
1512012A Novel Surface Nano-Structure Design for SiGe/Si Type-II Hetero-Junction Solar CellM.-H. Liao; C.-H. Chen; L.-C. Chang; C. Yang; S.-C. Kao; C.-F. Hsieh; MING-HAN LIAO 2012 International Conference on Solid State Devices and Materials (SSDM)
1522012Applications of positron annihilation, photoluminescence, and Raman spectroscopies to analyze the defect near the Si0.5Ge0.5/Si interface with super quality by diluted HF treatmentC.-H. Chen; M.-H. Liao; K.-R. Lee; W.-S. Hong; K.-S. Liao; M.-C. Hung; W.-S. Wang; MING-HAN LIAO 第十六屆非破壞檢測技術研討會暨年會論文競賽
1532012Effect of hydrogen participation on the improvement in electrical characteristics of HfO2 gate dielectrics by post-deposition remote N2, N2/H2, and NH3 plasma treatmentsM. H.Liao ; Li-Tien Huang; Ming-Lun Chang; Jhih-Jie Huang; Chin-Lung Kuo; Hsin-ChihLin; Min-Hung Lee; Miin-Jang ChenJournal of Physics D: Applied Physics
1542012A novel technique to fabricate 28 nm p-MOSFETs possessing gate oxide integrity on an embedded SiGe channel without silicon surface passivationM. H.Liao ; M. H. Yu; T. C. Huang; L. T. Wang; T. L. Lee; S. M. Jang; H. C.ChengJournal of Physics D: Applied Physics
1552012The optimization of SiGe hetero-structure thin-film solar cell by the theoretical calculation and quantitative analysisLiao, M.-H. ; Chen, Y.-Y.; Chen, C.-H.; Chang, L.-C.; Yang, C.; Hsieh, C.-F.2012 International Silicon-Germanium Technology and Device Meeting00
1562011Si/SiGe hetero-junction solar cell with optimization design and theoretical analysisChang, S.T.; Liao, M.H.; Lin, W.-K.; MING-HAN LIAO Thin Solid Films3328
1572011An Investigation on the Light-Emission Mechanism of Metal-Insulator-Semiconductor Light-Emitting Diodes with Different SiGe Quantum Well StructuresM.-H. Liao; L. C. Chang; MING-HAN LIAO 2011 International Semiconductor Device Research Symposium (ISDRS)
1582011Local stress determination in Shallow Trench Insulator structures with one-side and two-sides Pad-SiN layer by polarized micro-Raman spectroscopy extraction and mechanical modelizationLiao, M.H. ; Chang, L.C.2011 International Semiconductor Device Research Symposium00
1592011High-efficient Si nanotextured light-emitting diodes and solar cells with obvious photonic crystal effectHan Liao, M.; MING-HAN LIAO IEEE Transactions on Nanotechnology34
1602011The effect of surface treatment on omni-directional efficiency of the silicon solar cells with micro-spherical texture/ITO stacksChen, C.-H.; Juan, P.-C.; Liao, M.-H.; Tsai, J.-L.; Hwang, H.-L.; MING-HAN LIAO Solar Energy Materials and Solar Cells1410
1612011The investigation of optimal Si-sige hetero-structure thin-film solar cell with theoretical calculation and quantitative analysisLiao, M.H.; Chen, C.H.; MING-HAN LIAO IEEE Transactions on Nanotechnology2219
1622010Strain Engineering of Nanoscale Strained Si MOS DevicesB.-F. Hsieh; S. T. Chang; W.-C.Wang; M.-H. Liao; C.-C. Lee; J. Huang; MING-HAN LIAO Thin Solid Films
1632010Analysis of breakdown characteristics in high-k dielectrics under electrostatic discharge impulse stressChun-Heng Chen; Ming Han Liao; Fu-Chien Chiu; Huey-Liang Hwang; MING-HAN LIAO J. Appl. Phys
1642010The investigation of optimal Si-Sigh hetero-stucture thin-film solar cell with theoretical calculation and quantitative analysisLiao, M.H. ; Ho, W.S.; Chen, Y.-Y.; Chang, S.T.IEEE Photovoltaic Specialists Conference00
1652010Analysis of breakdown characteristics in high-k dielectrics under electrostatic discharge impulse stressChen, C.-H.; Liao, M.H.; Chiu, F.-C.; Hwang, H.-L.; MING-HAN LIAO Journal of Applied Physics11
1662010High efficient Si nano-textured light-emitting diodes and solar cells with obvious photonic crystal effectLiao, M.H.; Wang, W.-C.; Tsai, H.R.; Chang, S.T.; MING-HAN LIAO IEEE Photovoltaic Specialists Conference00
1672010Strain engineering of nanoscale Si MOS devicesHuang, J.; Chang, S.-T.; Hsieh, B.-F.; Liao, M.-H.; Wang, W.-C.; Lee, C.-C.; MING-HAN LIAO Thin Solid Films44
1682009Carrier backscattering characteristics of nanoscale strained complementary metal-oxide-semiconductor devices featuring the optimal stress engineeringChang, S.-T.; Liao, M.-H.; Lee, C.-C.; Huang, J.; Wang, W.-C.; MING-HAN LIAO ; MING-HAN LIAO Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics20
1692009Local stress determination in shallow trench insulator structures with one side and two sides pad SiN layer by polarized micro-Raman spectroscopy extraction and mechanical modelizationM. H. Liao; MING-HAN LIAO J. Appl. Phys
1702009The Dependence of the Performance of Strained NMOSFETs on Channel WidthLingyen Yeh; Ming Han Liao; Chun Heng Chen; Jun Wu; Joseph Ya-min Lee; Chee Wee Liu; T. L. Lee; M. S. Liang; MING-HAN LIAO IEEE Trans. on Electron Devices
1712009The dependence of the performance of strained NMOSFETs on channel widthYeh, L.; Liao, M.H.; Chen, C.H.; Wu, J.; Lee, J.Y.-M.; Liu, C.W.; Lee, T.L.; CHEE-WEE LIU ; Liao, M.H. IEEE Transactions on Electron Devices44
1722009An Investigation on the Light-Emission Mechanism of Metal-Insulator-Semiconductor Light-Emitting Diodes with Different SiGe Quantum Well StructuresM. H. Liao; MING-HAN LIAO Applied Physics Letters
1732009Carrier backscattering characteristics of nanoscale strained complementary metal-oxide-semiconductor devices featuring the optimal stress engineeringShu-Tong Chang; Ming-Han Liao; Chang-Chun Lee; Jacky Huang; Bing-Fong Hsieh; MING-HAN LIAO JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
1742009An investigation about the limitation of strained-Si technologyLiao, M.H.; Yeh, L.; Lu, J.C.; Yu, M.H.; Wang, L.T.; Wu, J.; Jeng, P.-R.; Lee, T.-L.; Jang, S.; MING-HAN LIAO International Symposium on VLSI Technology, Systems, and Applications10
1752009The correlation between trap states and mechanical reliability of amorphous Si:H TFTS for flexible electronicsLee, M.H.; Chang, S.T.; Weng, S.-C.; Liu, W.-H.; Chen, K.-J.; Ho, K.-Y.; Liao, M.H.; Huang, J.-J.; Hu, G.-R.; MING-HAN LIAO IEEE International Reliability Physics Symposium Proceedings00
1762008SiGe/Si Quantum-Dot Infrared Photodetectors With δ DopingChu-Hsuan Lin; MING-HAN LIAO et al. IEEE Nanotechnology
1772008Blue electroluminescence from metal/oxide/6H-SiC tunneling diodesJan, S.-R.; Cheng, T.-H.; Hung, T.-A.; Kuo, P.-S.; Liao, M.H.; Deng, Y.; CHEE-WEE LIU ; Cheng, T.-H. ; Liao, M.H. IEEE Transactions on Electron Devices33
1782008SiGe/Si quantum-dot infrared photodetectors with δ dopingLin, C.-H.; Yu, C.-Y.; Chang, C.-C.; Lee, C.-H.; Yang, Y.-J.; Ho, W.S.; Chen, Y.-Y.; Liao, M.H. ; Cho, C.-T.; Peng, C.-Y.; CHEE-WEE LIU IEEE Transactions on Nanotechnology66
1792008Superior n-MOSFET performance by optimal stress designLiao, M.H.; Yeh, L.; Lee, T.-L.; Liu, C.W.; CHEE-WEE LIU ; Liao, M.H. IEEE Electron Device Letters1512
18020082 um electroluminescence from the Si/Si0.2Ge0.8 type II heterojunctionM. H. Liao; T.-H. Cheng; C. W. Liu; Lingyen Yeh; T.-L. Lee; M.-S. Liang; MING-HAN LIAO J. Appl. Phys
1812008Gate width dependence on backscattering characteristics in the nanoscale strained complementary metal-oxide-semiconductor field-effect transistorLiao, M.H.; Liu, C.W.; Yeh, L.; Lee, T.-L.; CHEE-WEE LIU ; MING-HAN LIAO Applied Physics Letters1311
1822008Digital communication using Ge metal-insulator-semiconductor light-emitting diodes and photodetectorsCheng, T.-H.; Liao, M.H.; Yeh, L.; Lee, T.-L.; Liang, M.-S.; CHEE-WEE LIU ; MING-HAN LIAO Journal of Applied Physics87
18320082.0 μm electroluminescence from Si/ Si0.2 Ge0.8 type II heterojunctionsLiao, M.H.; Cheng, T.-H.; Liu, C.W.; Yeh, L.; Lee, T.-L.; CHEE-WEE LIU ; MING-HAN LIAO Journal of Applied Physics2219
1842008Optimal stress design in p-MOSFET with superior performanceLiao, M.H.; MING-HAN LIAO IEEE Transactions on Electron Devices108
1852007Superior n-MOSFET performance by optimal stress designYang, Y.-J.; Liao, M.H. ; Liu, C.W.Yeh, L., Lee, T.-L., Liang, M.-S.; Yeh, L.; Lee, T.-L.; CHEE-WEE LIU 2007 International Semiconductor Device Research Symposium10
1862007Blue electroluminescence from metal/oxide/6H-SiC tunneling diodesJan, S.-R.; Cheng, T.-H.; Liao, M.H.; Hung, T.-A.; Deng, Y.; CHEE-WEE LIU ; Liao, M.H. 2007 7th IEEE International Conference on Nanotechnology - IEEE-NANO 200700
1872007Electroluminescence from strained SiGe quantum dot light-emitting diodesCheng, T.-H.; Liao, M.H.; CHEE-WEE LIU ; Liao, M.H. 7th IEEE International Conference on Nanotechnology - IEEE-NANO 200700
1882007The intermixing and strain effects on electroluminescence of SiGe dotsMING-HAN LIAO ; Lee, C.-H.; Hung, T. A.; CHEE-WEE LIU Journal of Applied Physics2929
1892007Electrically pumped Ge laser at room temperatureCheng, T.-H.; Kuo, P.-S.; Lee, C.T.; Liao, M.H. ; Hung, T.A.; CHEE-WEE LIU International Electron Devices Meeting90
1902007Characterization of the Ultrathin HfO2 and Hf-Silicate Films Grown by Atomic Layer DepositionChen, Tze Chiang; Peng, Cheng-Yi; Tseng, Chih-Hung; Liao, Ming-Han ; Chen, Mei-Hsin; Wu, Chih-I ; Chern, Ming-Yau ; Tzeng, Pei-Jer; Liu, Chee Wee IEEE Transactions on Electron Devices3330
1912006Electroluminescence from the Ge quantum dot metal-oxide-semiconductor tunneling diodesLiao, M.H. ; Cheng, T.-H.; Chen, T.C.; Lai, C.-H.; Lee, C.-H.; Liu, C.W.Third International SiGe Technology and Device Meeting0
1922006Infrared emission from Ge metsl-isulator-semiconductor tunneling diodesM. H. Liao; T.-H. Cheng; C. W. Liu; MING-HAN LIAO Appl. Phys. Lett.,
1932006Electroluminescence from the Ge quantum dot metal-oxide-semiconductor tunneling diodesM. H. Liao; C.-Y. Yu; T.-H. Guo; C.-H. Lin; C. W. Liu; MING-HAN LIAO IEEE Electron Device Letters
1942006strained Pt Schottky diodes on n-type Si and GeM. H. Liao; P.-S. Kuo; S.-R. Jan; S.-T. Chang; C. W. Liu; MING-HAN LIAO Appl. Phys. Lett.,
1952006Promising a-Si:H TFTs with high mechanical reliability for flexible displayLee, M.H.; Ho, K.-Y.; Chen, P.-C.; Cheng, C.-C.; Chang, S.T.; Tang, M.; Liao, M.H. ; Yeh, Y.-H.International Electron Devices Meeting110
1962006Strained Pt Schottky diodes on n-type Si and GeLiao, M.H. ; Chang, S.T.; Kuo, P.S.; Wu, H.-T.; Peng, C.-Y.; Liu, C.W.Third International SiGe Technology and Device Meeting0
1972006Buckling characteristics of SiGe layers on viscous oxideYu, C.-Y.; Lee, C.-J.; Lee, C.-Y.; Lee, J.-T.; MING-HAN LIAO ; CHEE-WEE LIU Journal of Applied Physics33
1982006Infrared emission from Ge metal-insulator-semiconductor tunneling diodesMING-HAN LIAO ; Cheng, T.-H.; CHEE-WEE LIU Applied Physics Letters2931
1992006Electroluminescence from the Ge quantum dot MOS tunneling diodesMING-HAN LIAO ; Yu, C.-Y.; Guo, T.-H.; Lin, C.-H.; CHEE-WEE LIU IEEE Electron Device Letters3029
2002006The process and optoelectronic characterization of Ge-on-insulatorLin, C.-H.; Yu, C.-Y.; Liao, M.H.; Huang, C.-F.; Lee, C.-J.; Lee, C.-Y.; CHEE-WEE LIU ; Liao, M.H. ECS Transactions10
20120052 μm emission from Si/Ge heterojunction LED and up to 1.55 μm detection by GOI detectors with strain-enhanced featuresLiao, M.H. ; Yu, C.-Y.; Huang, C.-F.; Lin, C.-H.; Lee, C.-J.; Yu, M.-H.; Chang, S.T.; Liang, C.-Y.; Lee, C.-Y.; Guo, T.-H.; Chang, C.-C.; Liu, C.W.International Electron Devices Meeting2
2022005Electroluminescence from metal/oxide/strained-Si tunneling diodesMING-HAN LIAO ; MIIN-JANG CHEN ; Chen, T. C.; Wang, P. L.; CHEE-WEE LIU Applied Physics Letters6442
2032005Buckled SiGe layers by the oxidation of SiGe on viscous SiO2 layersYu, C.-Y.; Chen, P.-W.; Jan, S.-R.; MING-HAN LIAO ; Liao, Kao-Feng; CHEE-WEE LIU Applied Physics Letters1312
2042005Abnormal hole mobility of biaxial strained SiMING-HAN LIAO ; Chang, S. T.; Lee, M. H.; Maikap, S.; CHEE-WEE LIU Journal of Applied Physics1920
2052005Novel schottky barrier strained germanium PMOSPeng, C.-Y.; Yuan, F.; Lee, M.H.; Yu, C.-Y.; Maikap, S.; Liao, M.H. ; Chang, S.T.; Liu, C.W.2005 International Semiconductor Device Research Symposium2
2062004Package-strain-enhanced device and circuit performanceMaikap, S.; MING-HAN LIAO ; Yuan, F.; Lee, M.H.; Huang, C.-F.; Chang, S.T.; CHEE-WEE LIU Technical Digest - International Electron Devices Meeting, IEDM210
2072004BICMOS devices under mechanical strainLiu, C.W.; Maikap, S.; Liao, M.H. ; Yuan, F.; Lee, M.H.Electrochemical Society5
2081996Analysis of axial cracks in hollow cylinders subjected to thermal shock by using the thermal weight function methodMa, C.-C.; CHIEN-CHING MA ; MING-HAN LIAO Journal of Pressure Vessel Technology, Transactions of the ASME66