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207 2000 - 2024
1 1905 - 1999

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第 1 到 208 筆結果，共 208 筆。

	公開日期	標題	作者	來源出版物	scopus	WOS
1	2023	The Advantages of Double Catalytic Layers for Carbon Nanotube Growth at Low Temperatures (<400 °C) in 3D Stacking and Power Applications	Lin, Hong Yi; Basu, Nilabh; Lee, Min Hung; Chen, Sheng Chi; MING-HAN LIAO	Coatings	0	0
2	2023	Reduction of Metal/Carbon Nano-Tubes Interface Contact Resistance by Floating Catalyst Growing Method and Semimetals	Tsai, Y. T.; Basu, Nilabh; Chen, T.-W.; Chan, Y. C.; Lin, H.-Y.; Chen, S. C.; Lee, M. H.; MING-HAN LIAO	IEEE Transactions on Electron Devices	0	0
3	2023	Two-Dimensionally Arranged Display Drivers Achieved by OS/Si Structure	Komura, Yusuke; Miyata, Shoki; Okamoto, Yuki; Tamatsukuri, Yuki; Inoue, Hiroki; Saito, Toshihiko; Kozuma, Munehiro; Kobayashi, Hidetomo; Onuki, Tatsuya; Yanagisawa, Yuichi; Takeuchi, Toshihiko; Okazaki, Yutaka; Kunitake, Hitoshi; Nakamura, Daiki; Nagata, Takaaki; Yamane, Yasumasa; Ikeda, Makoto; Yen, Shih Ci; Chang, Chuan Hua; Hsieh, Wen Hsiang; Yoshida, Hiroshi; Chen, Min Cheng; MING-HAN LIAO ; Chang, Shou Zen; Yamazaki, Shunpei	Digest of Technical Papers - Symposium on VLSI Technology	0	0
4	2023	4-Layer Wafer on Wafer Stacking Demonstration with Face to Face/Face to Back Stacked Flexibility Using Hybrid Bond/TSV-Middle for Various 3D Integration	Lu, C. L.; Chuang, C. H.; Huang, C. H.; Lin, S. C.; Chang, Y. H.; Lai, W. Y.; Chiu, M. H.; MING-HAN LIAO ; Chang, S. Z.	Digest of Technical Papers - Symposium on VLSI Technology	0	0
5	2022	The demonstration of low-temperature (350 °C) grown carbon nano-tubes for the applications of through silicon via in 3D stacking and power-via	HSIN-YI LIN; Basu, Nilabh; Chen, S. C.; Lee, M. H.; MING-HAN LIAO	Applied Physics Letters	3	3
6	2022	The Investigation of Electrical Characteristics for Carbon Nano-Tubes as Through Silicon Via in Multi-Layer Stacking Scheme With an Optimized Structure	Chen, K. C.; Basu, Nilabh; Chen, S. C.; Lee, M. H.; MING-HAN LIAO	IEEE Transactions on Electron Devices	4	5
7	2022	Negative Schottky barrier height and surface inhomogeneity in n-silicon M-I-S structures	Harisha, C. P.; MING-HAN LIAO ; Kei, C. C.; Joshi, S.	AIP Advances	1	0
8	2022	Oxide Semiconductor Field-Effect Transistor for High-Resolution Displays Capable of Deep Black Display	Okazaki, Yutaka; Sawai, Hiromi; Endo, Masami; Motoyoshi, Ryousuke; Shimada, Daigo; Kunitake, Hitoshi; Yamazaki, Shunpei; Huang, Kou Chang; Yoshida, Hiroshi; Chen, Min Cheng; MING-HAN LIAO ; Chang, Shou Zen	Digest of Technical Papers - SID International Symposium	4	0
9	2022	1.5-inch, 3207-ppi Side-by-Side OLED Display Capable of 32-Division Driving with OSLSI/SiLSI Structure Fabricated by Photolithography	Kozuma, Munehiro; Okamoto, Yuki; Ito, Minato; Lnoue, Hiroki; Saito, Toshihiko; Komura, Yusuke; Miyata, Shoki; Toyotaka, Kouhei; Matsuzaki, Takanori; Onuki, Tatsuya; Kobayashi, Hidetomo; Sugaya, Kentaro; Fujie, Takahiro; Okazaki, Yutaka; Hodo, Ryota; Yanagisawa, Yuichi; Wakuda, Masahiro; Murakawa, Tsutomu; Sasagawa, Shinya; Kunitake, Hitoshi; Nakamura, Daiki; Nagata, Takaaki; Fukuzaki, Shinya; Aoyama, Tomoya; Kimura, Hajime; Yen, Shih Ci; Chang, Chuan Hua; Hsieh, Wen Hsiang; Yoshida, Hiroshi; Chen, Min Cheng; MING-HAN LIAO ; Chang, Shou Zen; Yamazaki, Shunpei	Digest of Technical Papers - SID International Symposium	6	0
10	2022	Multi-Layer Chips on Wafer Stacking Technologies with Carbon Nano-Tubes as Through-Silicon Vias and it's potential applications for Power-Via technologies	Liao, Bo Zhou; Chen, Liang Hsi; Chen, Kai Cheng; Lin, Hong Yi; Tsai, Yi Ting; Chen, Ting Wei; Chan, Yi Cheng; Lee, Min Hung; MING-HAN LIAO	Proceedings - Electronic Components and Technology Conference	3	0
11	2022	Layout of 1.50-inch, 3207-ppi oled display with oslsi/silsi structure capable of division driving fabricated through vlsi process with side-by-side patterning by photolithography	Saito, Toshihiko; Mizuguchi, Toshiki; Okamoto, Yuki; Ito, Minato; Toyotaka, Kouhei; Kozuma, Munehiro; Matsuzaki, Takanori; Kobayashi, Hidetomo; Onuki, Tatsuya; Hiura, Yoshikazu; Hodo, Ryota; Sasagawa, Shinya; Kunitake, Hitoshi; Nakamura, Daiki; Sato, Hitomi; Kimura, Hajime; Wu, Chih Chiang; Yoshida, Hiroshi; Chen, Min Cheng; MING-HAN LIAO ; Chang, Shou Zen; Yamazaki, Shunpei	Digest of Technical Papers - SID International Symposium	5	0
12	2022	The Demonstration of High-Quality Carbon Nanotubes as Through-Silicon Vias (TSVs) for Three-Dimensional Connection Stacking and Power-Via Technology	Yen C; Chang S; Chen K; Feng Y; Chen L; Liao B; Lee M; Chen S; Liao M.; MING-HAN LIAO	IEEE Transactions on Electron Devices
13	2021	Performance characteristics of strained Ge p-FinFETs under the integration of lattice and self-heating stress enabled by process-oriented finite element simulation	Lee C.-C; Hsieh C.-P; Huang P.-C; Liao M.-H.; MING-HAN LIAO	Applied Physics Express
14	2021	Multi-ferroic properties on bifeo3/batio3 multi-layer thin-film structures with the strong magneto-electric effect for the application of magneto-electric devices	Hu C.-W; Yen C.-M; Feng Y.-C; Chen L.-H; Liao B.-Z; Chen S.-C; Liao M.-H.; MING-HAN LIAO	Coatings
15	2021	In-Sn-Zn oxide nanocomposite films with enhanced electrical properties deposited by high-power impulse magnetron sputtering	Sun H; Li Z.-Y; Chen S.-C; Liao M.-H; Gong J.-H; Bai Z; Wang W.-X.; MING-HAN LIAO	Nanomaterials
16	2020	The real demonstration of High-Quality Carbon Nano-Tubes (CNTs) as the electrical connection for the potential application in a vertical 3D integrated technology	Lu, P.-Y.; Li, Y.-R.; Yen, C.-M.; Hung, H.-T.; Kao, C.-R.; Pu, W.-C.; Chen, C.-C.A.; Lee, M.-H.; MING-HAN LIAO ; C. ROBERT KAO	Proceedings - Electronic Components and Technology Conference	4	0
17	2020	Double Layers Omega FETs with Ferroelectric HfZrO 2 for One-Transistor Memory	Chen, K.-T. et al.; MING-HAN LIAO	IEEE International Reliability Physics Symposium Proceedings
18	2020	The Demonstration of 3-D Bi 2.0 Te 2.7 Se 0.3 /Bi 0.4 Te 3.0 Sb 1.6 Thermoelectric Devices by Ionized Sputter System	Liao, M.-H.; Huang, K.-C.; Su, W.-J.; Chen, S.-C.; Lee, M.-H.; MING-HAN LIAO ; WEI-JIUN SU	IEEE Transactions on Electron Devices		1
19	2020	The demonstration of carbon nanotubes (CNTs) as flip-chip connections in 3-D integrated circuits with an ultralow connection resistance	Liao, M.-H.; Lu, P.-Y.; Su, W.-J.; Chen, S.-C.; Hung, H.-T.; Kao, C.-R.; Pu, W.-C.; Chen, C.-C.A.; Lee, M.-H.; MING-HAN LIAO ; WEI-JIUN SU ; C. ROBERT KAO	IEEE Transactions on Electron Devices		6
20	2020	Ferroelectric HfZrO2with Electrode Engineering and Stimulation Schemes as Symmetric Analog Synaptic Weight Element for Deep Neural Network Training	Hsiang K.-Y; MING-HAN LIAO	IEEE Transactions on Electron Devices
21	2020	p-type semi-transparent conductive NiO films with high deposition rate produced by superimposed high power impulse magnetron sputtering	Chuang, T.-H.; Wen, C.-K.; Chen, S.-C.; Liao, M.-H.; Liu, F.; Sun, H.; MING-HAN LIAO ; TUNG-HAN CHUANG	Ceramics International		10
22	2020	The demonstration of Carbon Nano-Tubes (CNTs) as a promising high Aspect Ratio (>25) through Silicon Vias (TSVs) material for the vertical connection in the high dense 3DICs	Lu P.-Y; Yen C.-M; Chang S.-Y; Feng Y.-J; Lien C; Hu C.-W; Yao C.-W; Lee M.-H; Liao M.-H.; MING-HAN LIAO	Technical Digest - International Electron Devices Meeting, IEDM
23	2020	The Investigation for Thickness-Dependent Electrical Performance on BaTiO3 /BiFeO3 Bilayer Ferromagnetic Capacitors	Lien, C.; Hsieh, C.-F.; Wu, T.-C.; Yang, C.-S.; Lee, M.-H.; Xu, J.-J.; Hu, C.-W.; Huang, C.; Chang, S.-Z.; Liao, M.-H.; MING-HAN LIAO	IEEE Transactions on Electron Devices		3
24	2019	Bi-directional Sub-60mV/dec, Hysteresis-Free, Reducing Onset Voltage and High Speed Response of Ferroelectric-AntiFerroelectric Hf 0.25 Zr 0.75 O 2 Negative Capacitance FETs	Lee M.H; MING-HAN LIAO ; CHEE-WEE LIU	Technical Digest - International Electron Devices Meeting, IEDM	12	0
25	2019	Improvement on Ferroelectricity and Endurance of Ultra-Thin HfZrO<inf>2</inf> Capacitor with Molybdenum Capping Electrode	Chen, K.-T.; Liao, C.-Y.; Lo, C.; Chen, H.-Y.; Siang, G.-Y.; Liu, S.; Chang, S.-C.; Liao, M.-H.; Chang, S.-T.; Lee, M.H.; MING-HAN LIAO	2019 Electron Devices Technology and Manufacturing Conference
26	2019	The Development of a Dynamic Model to Investigate the Dielectric Layer Thickness Effect for the Device Performance in Triboelectric Nanogenerators	Liao, M.-H.; Wu, C.-C.; Su, W.-J.; Chen, S.-C.; Lee, M.-H.; MING-HAN LIAO ; WEI-JIUN SU	IEEE Transactions on Electron Devices
27	2019	Optoelectronic properties of Cu<inf>3</inf>N thin films deposited by reactive magnetron sputtering and its diode rectification characteristics	Chen, S.-C.; Huang, S.-Y.; Sakalley, S.; Paliwal, A.; Chen, Y.-H.; Liao, M.-H.; Sun, H.; Biring, S.; MING-HAN LIAO	Journal of Alloys and Compounds
28	2019	Comparison of microstructures and magnetic properties in FePt alloy films deposited by direct current magnetron sputtering and high power impulse magnetron sputtering	Yang, W.-S.; Sun, T.-H.; Chen, S.-C.; Jen, S.-U.; Guo, H.-J.; Liao, M.-H.; Chen, J.-R.; MING-HAN LIAO	Journal of Alloys and Compounds
29	2019	Optoelectronic properties of Cu3N thin films deposited by reactive magnetron sputtering and its diode rectification characteristics	S.-C. Chen; S.-Y. Huang; S. Sakalley; A. Paliwal; Y.-H. Chen; M.-H. Liao; H. Sun; S. Biring; MING-HAN LIAO	Journal of Alloys and Compounds
30	2019	Ferro-electric HfZrO2 FETs for steep switch onset	K.-T. Chen; MING-HAN LIAO	Microelectronic Engineering
31	2019	Non-Volatile Ferroelectric FETs Using 5-nm HfZrO with High Data Retention and Read Endurance for 1T Memory Applications	K.-T. Chen; H.-Y. Chen; C.-Y. Liao; G.-Y. Siang; C. Lo; M.-H. Liao; K.-S. Li; S. T. Chang; M.-H. Lee; MING-HAN LIAO	IEEE Electron Device Letters
32	2019	Non-Volatile Ferroelectric FETs Using 5-nm Hf<inf>0.5</inf>Zr<inf>0.5</inf>O<inf>2</inf> with High Data Retention and Read Endurance for 1T Memory Applications	Chen, K.-T.; Chen, H.-Y.; Liao, C.-Y.; Siang, G.-Y.; Lo, C.; Liao, M.-H.; Li, K.-S.; Chang, S.T.; Lee, M.H.; MING-HAN LIAO	IEEE Electron Device Letters
33	2019	Influence of sputtering power on the electrical properties of In-Sn-Zn oxide thin films deposited by high power impulse magnetron sputtering	Li, Z.-Y.; Chen, S.-C.; Huo, Q.-H.; Liao, M.-H.; Dai, M.-J.; Lin, S.-S.; Yang, T.-L.; Sun, H.; MING-HAN LIAO	Coatings
34	2019	Ferroelectric HfZrO<inf>2</inf> FETs for steep switch onset	Chen, K.-T.; Liao, C.-Y.; Chen, H.-Y.; Lo, C.; Siang, G.-Y.; Lin, Y.-Y.; Tseng, Y.-J.; Chang, C.; Chueh, C.-Y.; Yang, Y.-J.; Liao, M.-H.; Li, K.-S.; Chang, S.T.; Lee, M.H.; MING-HAN LIAO	Microelectronic Engineering
35	2018	Ferroelectric Characteristics of Ultra-thin Hf <inf>1-x</inf> Zr <inf>x</inf> O <inf>2</inf> Gate Stack and 1T Memory Operation Applications	Lee, M.H.; Kuo, C.Y.; Tang, C.-H.; Chen, H.-H.; Liao, C.-Y.; Hong, R.-C.; Gu, S.-S.; Chou, Y.-C.; Wang, Z.-Y.; Chen, S.-Y.; Chen, P.-G.; Liao, M.-H. ; Li, K.-S.	2018 IEEE Electron Devices Technology and Manufacturing Conference	2	0
36	2018	Steep switch-off of In <inf>0.18</inf> Al <inf>0.82</inf> N/AlN/GaN on Si MIS-HEMT	Chen, P.-G.; Chou, Y.-C.; Gu, S.-S.; Hong, R.-C.; Wang, Z.-Y.; Chen, S.-Y.; Liao, C.-Y.; Tang, M.,; Liao, M.-H. ; Lee, M.H.	2018 7th International Symposium on Next-Generation Electronics	0	0
37	2018	Thickness dependence of electrical conductivity and thermo-electric power of Bi2.0Te2.7Se0.3/Bi0.4Te3.0Sb1.6 thermo-electric devices	M. H.Liao ; K.-C. Huang; F.-A. Tsai; C.-Y. Liu; C. Lien; M.-H. Lee	AIP Advances
38	2018	Synthesis and characterization of n-type NiO:Al thin films for fabrication of p-n NiO homojunctions	M. H.Liao ; H. Sun; S.-C. Chenh; P.-C. Ling; S.-M. Song	Journal of Physics D: Applied Physics
39	2018	Planarization, Fabrication and Characterization of Three-dimensional Magnetic Field Sensors	M. H.Liao ; Van Su Luong; Yu-Hsin Su; Chih-Cheng Lu; Jen-Tzong Jeng; Jen-Hwa Hsu; Jong-Ching Wu; Meng-Huang Lai; Ching-Ray Chang	IEEE Transaction on Nanotech
40	2018	Ferroelectric Al:HfO <inf>2</inf> negative capacitance FETs	Lee, M.H.; Chen, P.-G.; Fan, S.-T.; Chou, Y.-C.; Kuo, C.-Y.; Tang, C.-H.; Chen, H.-H.; Gu, S.-S.; Hong, R.-C.; Wang, Z.-Y.; Chen, S.-Y.; Liao, C.-Y.; Chen, K.-T.; Chang, S.T.; Liao, M.-H. ; Li, K.-S.; CHEE-WEE LIU	International Electron Devices Meeting	22	0
41	2018	Planarization, Fabrication, and Characterization of Three-Dimensional Magnetic Field Sensors	Luong, V.S.; Su, Y.-H.; Lu, C.-C.; Jeng, J.-T.; Hsu, J.-H.; Liao, M.-H. ; Wu, J.-C.; Lai, M.-H.; CHING-RAY CHANG	IEEE Transactions on Nanotechnology	21	21
42	2018	Monolithic integration of GaN-based light-emitting diodes and metal-oxide-semiconductor field-effect transistors: Reply	Lee, Y.-J.; Yang, Z.-P.; Chen, P.-G.; Hsieh, Y.-A.; Yao, Y.-C.; Liao, M.-H.; Lee, M.-H.; Wang, M.-T.; Hwang, J.-M.; MING-HAN LIAO	Optics Express
43	2018	Thickness dependence of electrical conductivity and thermo-electric power of Bi<inf>2.0</inf>Te<inf>2.7</inf>Se<inf>0.3</inf>/Bi<inf>0.4</inf>Te<inf>3.0</inf>Sb<inf>1.6</inf> thermo-electric devices	Liao, M.-H.; Huang, K.-C.; Tsai, F.-A.; Liu, C.-Y.; Lien, C.; Lee, M.-H.; MING-HAN LIAO	AIP Advances
44	2018	The demonstration of high-performance multilayer BaTiO <inf>3</inf> /BiFeO <inf>3</inf> stack MIM capacitors	Lien, C.; Hsieh, C.-F.; Wu, H.-S.; Wu, T.-C.; Wei, S.-J.; Chu, Y.-H.; Liao, M.-H. ; Lee, M.-H.	IEEE Transactions on Electron Devices	9	9
45	2018	The Demonstration of High-Performance Multilayer BaTiO3/BiFeO3 Stack MIM Capacitors	C. Lien; C.-F. Hsieh; H.-S. Wu; T.-C. Wu; S.-J. Wei; Y.-H. Chu; M.-H. Liao; M.-H. Lee; MING-HAN LIAO	IEEE Transactions on Electron Devices
46	2018	Ferroelectric HfZrOx FETs on SOI Substrate with Reverse-DIBL (Drain-Induced Barrier Lowering) and NDR (Negative Differential Resistance)	K.-T. Chen; MING-HAN LIAO	IEEE Journal of the Electron Devices Society
47	2018	Retraction notice to “The demonstration of a high efficient SiGe Type-II hetero-junction solar cell with an optimal stress design” [Thin Solid Films, 544 (2013) 112-115](S0040609013007360)(10.1016/j.tsf.2013.04.100)	MING-HAN LIAO	Thin Solid Films	0	0
48	2018	Sub-60mV/dec Subthreshold Swing on Reliability of Ferroelectric HfZrOx Negative-Capacitacne FETs with DC Sweep and AC Stress Cycles	M. H.Liao ; K.-T. Chen; C.-Y. Liao; R.-C. Hong; S.-S. Gu; Y.-C. Chou; Z.-Y. Wang; S.-Y.Chen; G.-Y. Siang; H.-Y. Chen; C. Lo; P.-G. Chen; Y.-J. Lee; K.-S.Li; S. T. Chang; M. H. Lee	2018 International Conference on Solid State Devices and Materials
49	2018	Ferroelectric HfZrO&#x2093; FETs on SOI Substrate with Reverse-DIBL (Drain-Induced Barrier Lowering) and NDR (Negative Differential Resistance)	Chen, K.; Gu, S.; Wang, Z.; Liao, C.; Chou, Y.; Hong, R.; Chen, S.; Chen, H.; Siang, G.; Le, J.; Chen, P.; Liao, M.; Li, K.; Chang, S.T.; MING-HAN LIAO	IEEE Journal of the Electron Devices Society	15	14
50	2017	In <inf>0.18</inf> Al <inf>0.82</inf> N/AlN/GaN MIS-HEMT on Si with Schottky-drain contact	Chen, P.-G.; Tang, M.; Liao, M.-H.; MING-HAN LIAO	Solid-State Electronics	5	5
51	2017	Performance Enhancement for the Triboelectric Energy Harvester by using interfacial microdome array structures	M. H.Liao ; H.-I. Huang; C.-C. Chuang	Applied Physics Letters
52	2017	The systematic investigation of self-heating effect on CMOS Logic transistors from 20 nm to 5 nm technology nodes by experimental thermo-electric measurements and finite element modeling	M. H.Liao ; C.-P. Hsieh; C.-C. Lee	IEEE Transactions on Electron Devices
53	2017	The effect of CESL and dummy poly gate for n-type MOSFETs with short Si0.75Ge0.25 channel.	M. H.Liao ; H.-W. Hsuh; C.-C. Lee	Vacuum
54	2017	Ferroelectric Al:HfO2 Negative Capacitance FETs	M. H.Liao ; M. H. Lee; P.-G. Chen; S.-T. Fan; Y.-C. Chou; C.-Y. Kuo; C.-H. Tang; H.-H.Chen; S.-S. Gu; R.-C. Hong; Z.-Y. Wang; S.-Y. Chen; C.-Y. Liao; K.-T. Chen; S.T. Chang; K.-S. Li; C. W. Liu	International Electron Devices Meeting
55	2017	In0.18Al0.82N/AlN/GaN HEMT on Si with Hybrid Ohmic and Schottky Source/Drain Solid State Electronics	M. H.Liao ; P.-G. Chen; M. Tang; M. H. Lee	Solid State Electronics
56	2017	The investigation of selfheating effect on Si1-xGex FinFETs with different device structures, Ge concentration, and operated voltages	M. H.Liao ; C.-P. Hsieh; C.-C. Lee	AIP Advances
57	2017	The achievement of the super short channel control in the magnetic Ge nFinFETs with the negative capacitance effect	M. H.Liao ; H.-Y. Huang; F.-A. Tsai; C.-C. Chuang; M.-H. Hsu; C.-C. Lee; M.-H. Lee; C. Lien; C.-F. Hsieh; T.-C. Wu; H.-S. Wu; C.-W. Yao	Vacuum
58	2017	Performance enhancement for the triboelectric energy harvester by using interfacial micro-dome array structures	Liao, M.-H.; Huang, H.-Y.; Chuang, C.-C.; MING-HAN LIAO	Applied Physics Letters
59	2017	Green energy computing of heterojunction with intrinsic thin layer (HIT) solar cell by CAD (Computer aided design)	Lee, M.H.; Liao, M.H. ; Tai, C.-W.; Chang, S.T.	Future Technologies Conference	0	0
60	2017	Systematic Investigation of Self-Heating Effect on CMOS Logic Transistors from 20 to 5 nm Technology Nodes by Experimental Thermoelectric Measurements and Finite Element Modeling	Liao, M.-H. ; Hsieh, C.-P.; Lee, C.-C.	IEEE Transactions on Electron Devices	14	15
61	2017	The investigation of self-heating effect on Si1-xGex FinFETs with different device structures, Ge concentration, and operated voltages	M.-H. Liao; C.-P. Hsieh; C.-C. Lee; MING-HAN LIAO	AIP Advances
62	2017	The achievement of the super short channel control in the magnetic Ge n-FinFETs with the negative capacitance effect	Liao, M.-H.; Huang, H.-Y.; Tsai, F.-A.; Chuang, C.-C.; Hsu, M.-H.; Lee, C.-C.; Lee, M.-H.; Lien, C.; Hsieh, C.-F.; Wu, T.-C.; Wu, H.-S.; Yao, C.-W.; MING-HAN LIAO	Vacuum
63	2017	Negative capacitance FETs with steep switching by ferroelectric Hf-based oxide	MING-HAN LIAO ; CHEE-WEE LIU	2017 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2017	4	0
64	2017	Physical thickness 1.x nm ferroelectric HfZrOx negative capacitance FETs	Lee, M.H.; Fan, S.-T.; Tang, C.-H.; Chen, P.-G.; Chou, Y.-C.; Chen, H.-H.; Kuo, J.-Y.; Xie, M.-J.; Liu, S.-N.; Liao, M.-H. ; Jong, C.-A.; Li, K.-S.; Chen, M.-C.; Liu, C.W.	International Electron Devices Meeting	91	0
65	2017	The investigation of self-heating effect on Si<inf>1-x</inf>Ge<inf>x</inf> FinFETs with different device structures, Ge concentration, and operated voltages	Liao, M.-H.; Hsieh, C.-P.; Lee, C.-C.; MING-HAN LIAO	AIP Advances
66	2017	The effect of CESL and dummy poly gate for n-type MOSFETs with short Si<inf>0.75</inf>Ge<inf>0.25</inf> channel	Lee, C.-C.; Hsu, H.-W.; Liao, M.-H.; MING-HAN LIAO	Vacuum
67	2016	MOS Devices with UltraHigh Dielectric Constants and Methods of Forming the Same	M.H.Liao ; M.Hongh
68	2016	STI Geometric Influence of a Recessed Surface on Array-type Arrangements of Nano-scaled Devices Strained by CESL and Ge-based Stressors	M. H.Liao ; C. C. Lee; C.-P. Hsieh; P.-C. Huang; S.-W. Cheng	Thin Solid Films
69	2016	MAGNET IC CAPACIT OR STRUCT URES	M.H.Liao ; C.Hsieh; C.Chen
70	2016	Simulation-based study of negative-capacitance double-gate tunnel field-effect transistor with ferroelectric gate stack	Liu, C.; Chen, P.-G.; Xie, M.-J.; Liu, S.-N.; Lee, J.-W.; Huang, S.-J.; Liu, S.; Chen, Y.-S.; Lee, H.-Y.; Liao, M.-H. ; Chen, P.-S.; Lee, M.-H.	Japanese Journal of Applied Physics	31	23
71	2016	Narrow channel width effect modificati on in a shallow trench isolation device	M. H.Liao ; T.L. Lee
72	2016	Isolation Region Implant and Structure	M. H.Liao ; T.L. Lee
73	2016	Ge<inf>1 - X</inf>Si<inf>x</inf> on Ge-based n-type metal-oxide semiconductor field-effect transistors by device simulation combined with high-order stress-piezoresistive relationships	Lee, C.-C.; Hsieh, C.-P.; Huang, P.-C.; Cheng, S.-W.; Liao, M.-H.; MING-HAN LIAO	Thin Solid Films
74	2016	STI stress modulation with additional implantati on and natural pad sin mask	M. H.Liao ; T.L. Lee; L.-Y.Yeh; M.S.Liang
75	2016	PET imaging of serotonin transporters with 4-[ 18 F]-ADAM in a parkinsonian rat model with porcine neural xenografts	Chiu C.-H.; Li I.-H.; Weng S.-J.; Huang Y.-S.; Wu S.-C.; Chou T.-K.; Huang W.-S.; Liao M.-H.; Shiue C.-Y.; Cheng C.-Y.; SHINN-CHIH WU ; Liao, M.-H.	Cell Transplantation	7	6
76	2016	The investigation of the diameter dimension effect on the Si nano-tube transistors	M. H.Liao ; C.-H. Yeh; C.-C. Lee; C.-P. Wang	AIP Advances	0
77	2016	SEMICO NDUCTO R DEVICE AND METHOD OF FORMAT ION	M. H.Liao
78	2016	Effects of array type of dummy active diffused region and gate geometries on narrow NMOSFETs with SiC S/D stressors	Lee, C.-C.; Hsieh, C.-P.; Liao, M.-H. ; Cheng, S.-W.; Guo, Y.-H.	2014 IEEE International Nanoelectronics Conference	1	0
79	2016	Ge1-xSix on Ge-Based N-Type Metal-Oxide Semiconductor Field-Effect Transistors by Device Simulation Combined with High-Order StressPiezoresistive Relationships	M. H.Liao ; C.-C. Lee; C.-P. Hsieh; P.-C. Huang; S.-W. Cheng	Thin Solid Films
80	2016	Shallow trench isolation geometric influence of a recessed surface on array-type arrangements of nano-scaled devices strained by contact etch stop liner and Ge-based stressors	Hsieh, C.-P.; Liao, M.-H.; Lee, C.-C.; Cheng, T.-C.; Wang, C.-P.; Huang, P.-C.; Cheng, S.-W.; MING-HAN LIAO	Thin Solid Films
81	2016	Comprehensive investigation on array-type dummy active diffused region and gate geometries using narrow NMOSFETs with SiC S/D stressors	Lee, Chang Chun; Cheng, Sen Wen; Hsieh, Chia Ping; Liao, Ming Han; Guo, Yu Huan; MING-HAN LIAO	International Journal of Nanotechnology
82	2015	The comprehensive study and the reduction of contact resistivity on the n-InGaAs MIS contact system with different inserted insulators	M. H.Liao ; C. Lien	AIP Advances
83	2015	利用拉曼光譜檢測半導體缺陷技術	廖洺漢 ; 陳畤華; 謝卓帆
84	2015	The demonstration of the magnetic Ge metal-oxide-semiconductor field-effect transistor	M. H.Liao ; S.-C. Huang	AIP Advances
85	2015	The demonstration of the Si nano-tube device with the promising short channel control	M. H.Liao ; P.-G. Chen	Journal of Applied Physics
86	2015	The demonstration of a D-SMT stressor on Ge planer n-MOSFETs	M. H.Liao ; P.-G. Chen	AIP Advances
87	2015	The demonstration of the novel nanotube Si device with the promising device performance behavior	M. H.Liao ; C. P. Hsieh	9th International Conference on Silicon Epitaxy and Heterostructures
88	2015	The demonstration of promising Ge ntype multi-gate-FETs with the magnetic FePt metal gate scheme	M. H.Liao ; P.-G. Chen	Applied Physics Letters
89	2015	Publisher's note: "Optimization of dislocation edge stress effects for Si N-type metal-oxide-semiconductor field-effect transistors" [Jpn. J. Appl. Phys. 52, 04CC20 (2013)]	Liao, M.-H. ; Chen, C.-H.; Chang, L.-C.; Yang, C.; Yu, M.-A.; Liu, G.-H.; Kao, S.-C.	Japanese Journal of Applied Physics	0	0
90	2015	Prospects for Ferroelectric HfZrOx FETs with Experimentally CET=0.98nm,SSfor=42mV/dec, SSrev=28mV/dec, Switch-OFF <0.2V, and Hysteresis-Free Strategies	M. H. Lee; MING-HAN LIAO	IEEE Electron Device Meeting (IEDM) 2015
91	2015	The demonstration of dislocation-stress memorization technique stressor on Si n-FinFETs	M. H.Liao ; P.-G. Chen	IEEE Transactions on Nanotechnology	2	1
92	2015	A non-linear analytic stress model for the analysis on the stress interaction between TSVs	Liao, M.-H. ; Kao, S.-C.; Huang, S.-J.	International Journal of Automation and Smart Technology	0	0
93	2015	Erratum: The novel chamber hardware design to improve the thin film deposition quality in both 12″ (300 mm) and 18″ (450 mm) wafers with the development of 3D full chamber modeling and experimental visual technique; (AIP Advances (2013) 3:7 (072117))	Liao, M.-H.; MING-HAN LIAO	AIP Advances	0	0
94	2015	Erratum to "Additional Nitrogen Ion-Implantation Treatment in STI to Relax the Intrinsic Compressive Stress for n-MOSFETs"	Liao, M.-H.; Chen, C.H.; Chang, L.C.; Yang, C.; MING-HAN LIAO	IEEE Transactions on Electron Devices	1	1
95	2015	Prospects for Ferroelectric HfZrOx FETs with Experimentally CET=0.98nm,SSfor=42mV/dec, SSrev=28mV/dec, Switch-OFF	M. H.Liao ; M. H. Lee; P.-G. Chen; C. Liu; K-Y. Chu; C.-C. Cheng; M.-J. Xie; S.-N. Liu; J.-W. Lee; S.-J. Huang; M. Tang; K.-S. Li; M.-C. Chen	IEEE Electron Device Meeting
96	2015	The high performance Ge Metal-Oxide-Semiconductor Field-Effect Transistor with the magnetic metal gate	M. H.Liao ; S.-C. Huangn; C. P. Hsieh	9th International Conference on Silicon Epitaxy and Heterostructures
97	2015	Prospects for ferroelectric HfZrOx FETs with experimentally CET=0.98nm, SS<inf>for</inf>=42mV/dec, SS<inf>rev</inf>=28mV/dec, switch-off <0.2V, and hysteresis-free strategies	Lee, M.H.; Chen, P.-G.; Liu, C.; Chu, K.-Y.; Cheng, C.-C.; Xie, M.-J.; Liu, S.-N.; Lee, J.-W.; Huang, S.-J.; Liao, M.-H. ; Tang, M.; Li, K.-S.; Chen, M.-C.	International Electron Devices Meeting	87	0
98	2015	~20% Idsat improvement in the Si 3D FinFET with the implement of D-SMT process	M. H.Liao ; P.-G. Chen; C. P. Hsieh	9th International Conference on Silicon Epitaxy and Heterostructures
99	2015	Sub-60mV-Swing Negative-Capacitance FinFET without Hysteresis	M. H.Liao ; K. S. Li; P.-G. Chen; T. Y. Lai; C. H. Lin; C.-C. Cheng; C. C. Chen; M. H. Lee; M. C. Chen; J. M. Sheih; W. K. Yeh; F. L. Yang; Sayeef Salahuddin; Chenming Hu	IEEE Electron Device Meeting	233	0
100	2015	The dependency of different stress-level SiN capping films and the optimization of D-SMT process for the device performance booster in Ge n-FinFETs	M. H.Liao ; P.-G. Chen	Applied Physics Letters
101	2015	The comprehensive study and the reduction of contact resistivity on the n-InGaAs M-I-S contact system with different inserted insulators	Liao, M.-H.; Lien, C.; MING-HAN LIAO	AIP Advances
102	2015	The demonstration of promising Ge n-type multi-gate-field-effect transistors with the magnetic FePt metal gate scheme	Liao, M.-H.; Huang, S.C.; MING-HAN LIAO	Applied Physics Letters
103	2014	The demonstration of colossal magneto-capacitance and 'negative' capacitance effect with the promising characteristics of Jg-EOT and transistor's performance on Ge (100) n-FETs by the novel magnetic gate stack scheme design	Liao, M.-H. ; Huang, S.C.; Liu, C.Y.; Chen, P.G.; Kao, S.C.; Lien, C.	Symposium on VLSI Technology	4	0
104	2014	The demonstration of colossal magneto-capacitance and “negative” capacitance effect with the promising characteristics of Jg-EOT and transistor’s performance on Ge (100) n-FETs by the novel magnetic gate stack scheme design	M.-H. Liao; S. C. Huang; C. Y. Liu; P. G. Chen; S. C. Kao; C. Lien; MING-HAN LIAO	2014 Symposium on VLSI Technology (VLSI-technology)
105	2014	Monolithic integration of GaN-based light- emitting diodes and metal-oxide-semiconductor field-effect transistors	M. H.Liao ; Y.-J. Lee; Z.-P. Yang; P.-G. Chen; Y.-A. Hsieh; Y.-C. Yao; M.-H. Lee; M.-T. Wang; J.-M. Hwang	Optics Express
106	2014	Monolithic integration of GaN-based lightemitting diodes and metal-oxide-semiconductor field-effect transistors	Lee, Y.-J.; Yang, Z.-P.; Chen, P.-G.; Hsieh, Y.-A.; Yao, Y.-C.; Liao, M.-H.; Lee, M.-H.; Wang, M.-T.; Hwang, J.-M.; MING-HAN LIAO	Optics Express
107	2014	The demonstration of D-SMT stressor on Si and Ge n-FinFETs	Liao, M.-H. ; Chen, P.G.; Huang, S.C.; Kao, S.C.; Hung, C.X.; Liu, K.H.; Lien, C.; Liu, C.Y.	Symposium on VLSI Technology	6	0
108	2014	Analyzing Si-SiGe thin-film solar cell by simulation and calculation	Hsieh, C.-F.; Li, Y.-T.; Wu, H.-S.; Wu, T.-C.; Liao, M.H.	2014 IEEE 40th Photovoltaic Specialist Conference	0	0
109	2014	Optimized Si <inf>0.5</inf> Ge <inf>0.5</inf> /Si interface quality by the process of low energy hydrogen plasma cleaning and investigation by Positron Annihilation spectroscopy	Hsieh, C.F.; Chen, C.W.; Chen, C.H.; Liao, M.H.	Procedia Engineering	0	0
110	2014	The demonstration of colossal magneto-capacitance effect with the promising gate stack characteristics on Ge (100) by the magnetic gate stack design	M. H.Liao ; S.-C. Huang	Applied Physics Letters
111	2014	The improving Si <inf>0.5</inf> Ge <inf>0.5</inf> /Si interface quality through a low energy hydrogen plasma cleaning process and positron annihilation spectroscopy	Hsieh, C.-F.; Chen, C.-W.; Chen, C.-H.; Liao, M.-H.	International Journal of Automation and Smart Technology	0	0
112	2014	Periodic nanostructured thin-film solar cells	Hsieh, C.-F.; Wu, H.-S.; Wu, T.-C.; Liao, M.-H.	Advanced Materials Research	0	0
113	2014	Stress and curvature of periodic trench structures on Sapphire substrate with GaN film	Hsieh, C.F.; Chen, C.W.; Chen, C.H.; Liao, M.H.	Procedia Engineering	0	0
114	2014	High κ/InGaAs for ultimate CMOS - Interfacial passivation, low ohmic contacts, and device performance (Invited)	Chang, W.H.; Lin, T.D.; Liao, M.H. ; Pi, T.W.; Kwo, J.; Hong, M.	ECS Transactions	1	0
115	2013	The novel chamber hardware design to improve the thin film deposition quality in both 12? (300 mm) and 18? (450 mm) wafers with the development of 3D full chamber modeling and experimental visual technique	Liao, M.-H. ; Chen, C.-H.; Kao, S.-C.	International Journal of Heat and Mass Transfer	1	1
116	2013	Optimization of dislocation edge stress effects for si n-type metal-oxide-semiconductor field-effect transistors	Liao, M.-H. ; Chen, C.-H.; Chang, L.-C.; Yang, C.; Yu, M.-Y.; Liu, G.-H.; Kao, S.-C.	Japanese Journal of Applied Physics	0	1
117	2013	The demonstration of nonlinear analytic model for the strain field induced by thermal copper filled TSVs (through silicon via)	Liao, M.-H. ; Chen, C.-H.; Lee, J.J.; Chen, K.C.; JYH-JONE LEE	2013 e-Manufacturing and Design Collaboration Symposium	0	0
118	2013	Experimental demonstration for ultralow on-resistance in raised source/drain In0.53Ga0.47As QW-MOSFETs withimplant-free process	M. H.Liao ; P.-G. Chen	Journal of Physics D: Applied Physics
119	2013	Experimental demonstration on the ultra-low source/drain resistance by metal-insulator-semiconductor contact structure in In<inf>0.53</inf>Ga <inf>0.47</inf>As field-effect transistors	Liao, M.-H.; Chen, P.-K.; MING-HAN LIAO	AIP Advances
120	2013	Experimental demonstration for ultra-low on-resistance in raised source/drain In<inf>0.53</inf>Ga<inf>0.47</inf>As QW-MOSFETs with implant-free process	Liao, M.-H.; Chan, P.-G.; MING-HAN LIAO	Journal of Physics D: Applied Physics
121	2013	The novel chamber hardware design to improve the thin film deposition quality in both 12 <sup>?</sup> (300 mm) and 18 <sup>?</sup> (450 mm) wafers with the development of 3D full chamber modeling and experimental visual technique	Liao, M.-H.; Chen, C.-H.; MING-HAN LIAO	AIP Advances
122	2013	The reduction of keep-out zone (?10×) by the optimized novel trench structures near the through silicon vias for the application in 3-dimensional integrated circuits	Liao, M.H.; MING-HAN LIAO	Journal of Applied Physics
123	2013	The special trench design near the through silicon vias (TSVs) to reduce the keep-out zone for application in three-dimensional integral circuits	Liao, M.-H.; MING-HAN LIAO	Journal of Physics D: Applied Physics
124	2013	Experimental demonstration for the implant-free In<inf>0.53</inf>Ga <inf>0.47</inf>As quantum-well metal-insulator-semiconductor field-effect transistors with ultra-low source/drain resistance	Liao, M.-H.; Chang, L.C.; MING-HAN LIAO	Applied Physics Letters
125	2013	Relaxation of Residual Stress in Bent GaN Film on Sapphire Substrate by Laser Treatment With an Optimized Surface Structure Design	M. H.Liao ; C. H. Chen; L.-C. Chang; S. C. Kao; M.-Y. Yu; G.-H. Liu; M.-C.Huang	IEEE Transaction on Electron Devices	1
126	2013	Residual stress of curvature sapphire substrate with GaN film released by the application of trench structures	Liao, M.-H. ; Lee, J.-J.; Chen, C.-H.; Kao, S.-C.; Chen, K.-C.; JYH-JONE LEE	International Journal of Automation and Smart Technology	0	0
127	2013	The chemical vapor deposition chamber design to improve the thin film deposition quality in both 12? (300 mm) and 18? (450 mm) wafers with the development of 3D chamber modeling and experimental visual technique	Liao, M.-H. ; Chen, C.-H.; Kao, S.-C.; Huang, M.-C.	2013 e-Manufacturing and Design Collaboration Symposium	0	0
128	2013	Improved Si0.5Ge0.5/Si interface quality achieved by the process of low energy hydrogen plasma cleaning and investigation of interface quality with positron annihilation spectroscopy	M. H.Liao ; C.-H. Chen	AIP Advances
129	2013	Studies of boron diffusivities on (001) and (110) substrate orientation in Si and Ge along vertical/out-of plane and lateral/in-plane directions study	M. H.Liao	Thin Solid Films
130	2013	Effect of hydrogen participation on the improvement in electrical characteristics of HfO2 gate dielectrics by post-deposition remote N2, N2/H2, and NH3 plasma treatments	Huang L.-T.; Chang M.-L.; Huang J.-J.; Kuo C.-L.; Lin H.-C.; Liao M.-H.; Lee M.-H.; HSIN-CHIH LIN ; MING-HAN LIAO ; CHIN-LUNG KUO ; MIIN-JANG CHEN	Journal of Physics D: Applied Physics	10	7
131	2013	Optimized surface structure by laser treatment for the relaxation of residual stress in bent GaN film	Chen, C.-H.; Liao, M.-H.; Chang, L.-C.; Kao, S.-C.; Yang, C.; Yu, M.-Y.; Liu, G.-H.; MING-HAN LIAO	Journal of Physics D: Applied Physics
132	2013	CVD chamber design to improve deposition quality in both 300- and 450- mm wafers with 3D-chamber modeling and experimental visual technique	M. H.Liao ; C.-H. Chen; S.-C. Kao; M.-C. Huang	e-Manufacturing & Design Collaboration Symposium
133	2013	Nonlinear analytic model for the strain field induced by thermal copper filled TSVs	M. H.Liao ; C.-H. Chen; J.-J. Lee; K.-C. Chen; J.-H. Liang	e-Manufacturing & Design Collaboration Symposium
134	2013	The relaxation of stress and reduction of KOZ by the special designed trench structure near the TSV for the application of 3-DICs	M. H.Liao ; M.-Y. Yu; G.-H. Liu; C.-H. Chen; C.-X. Hong	Asia-Pacific Radio Science Conference
135	2013	Solar cell composed of periodic nano-structure and SiGe/Si thin film	Hsieh, C.-F.; Wu, H.-S.; Wu, T.-C.; Liao, M.H.	Conference Record of the IEEE Photovoltaic Specialists Conference	0	0
136	2013	The demonstration of a highly efficient SiGe Type-II hetero-junction solar cell with an optimal stress design	MING-HAN LIAO	Thin Solid Films	5	5
137	2013	The demonstration of nonlinear analytic model for the strain field induced by thermal copper filled TSVs (through silicon via)	M. H.Liao ; G.-H. Liu; M.-Y. Yu; C.-H. Chen; C.-X. Hong	AIP Advances	3	2
138	2013	Improved Si<inf>0.5</inf>Ge<inf>0.5</inf>/Si interface quality achieved by the process of low energy hydrogen plasma cleaning and investigation of interface quality with positron annihilation spectroscopy	Liao, M.-H.; Chen, C.-H.; MING-HAN LIAO	AIP Advances
139	2012	The relaxation of intrinsic compressive stress in complementary metal-oxide-semiconductor transistors by additional N ion implantation treatment with atomic force microscope-Raman stress extraction	Liao, M-H; Chen, C-H; Chang, L-C; Yang, C.; Kao, S-C; LiaoMH ; ChenCH	Journal of Applied Physics	14	8
140	2012	A Novel Surface Nano-Structure Design for SiGe/Si Type-II Hetero-Junction Solar Cell	M.-H. Liao; C.-H. Chen; L.-C. Chang; C. Yang; S.-C. Kao; C.-F. Hsieh; MING-HAN LIAO	2012 International Conference on Solid State Devices and Materials (SSDM)
141	2012	The investigation on Dislocation Edge Stress Effects for Si N-MOSFETs	M.-H. Liao; C.-H. Chen; L.-C. Chang; C. Yang; S.-C. Kao; C.-F. Hsieh; MING-HAN LIAO	2012 International Conference on Solid State Devices and Materials (SSDM)
142	2012	SiGe Quantum Well Metal-Insulator-Semiconductor Light-Emitting Diodes	M.-H. Liao; C.-H. Chen; L.-C. Chang; C. Yang; S.-C. Kao; C.-F. Hsieh; MING-HAN LIAO	2012 International Conference on Solid State Devices and Materials (SSDM)
143	2012	The Systematic Study and Simulation Modeling on Dislocation Edge Stress Effects for Si N-MOSFETs	M.-H. Liao; MING-HAN LIAO	The 6th International Conference on Technological Advances of Thin Films & Surface Coatings
144	2012	A Novel Stress Design for the Type-II Hetero-Junction Solar Cell with Superior Performance	M.-H. Liao; MING-HAN LIAO	The 6th International Conference on Technological Advances of Thin Films & Surface Coatings
145	2012	Nano-textured photonic crystal light-emitting diodes and solar cells	M.-H. Liao; C.-H. Chen; L.-C. Chang; C. Yang; S.-C. Kao; C.-F. Hsieh; MING-HAN LIAO	2012 International Conference on Solid State Devices and Materials (SSDM)
146	2012	Applications of positron annihilation, photoluminescence, and Raman spectroscopies to analyze the defect near the Si0.5Ge0.5/Si interface with super quality by diluted HF treatment	C.-H. Chen; M.-H. Liao; K.-R. Lee; W.-S. Hong; K.-S. Liao; M.-C. Hung; W.-S. Wang; MING-HAN LIAO	第十六屆非破壞檢測技術研討會暨年會論文競賽
147	2012	Additional Nitrogen Ion-Implantation Treatment in STI to Relax the Intrinsic Compressive Stress for n-MOSFETs	Liao, M.-H.; Chen, Chih Hua; Chang, Li Cheng; Yang, Chen; Kao, Ssu Chieh; Liao, M.-H.	IEEE Transactions on Electron Devices	7	6
148	2012	The optimization of SiGe hetero-structure thin-film solar cell by the theoretical calculation and quantitative analysis	Liao, M.-H. ; Chen, Y.-Y.; Chen, C.-H.; Chang, L.-C.; Yang, C.; Hsieh, C.-F.	2012 International Silicon-Germanium Technology and Device Meeting	0	0
149	2012	Studies of boron diffusivities on (001) and (110) substrate orientation in Si and Ge along vertical/out-of plane and lateral/in-plane directions by SIMS and C-V measurement on the designed test pattern	M.-H. Liao; MING-HAN LIAO	The 6th International Conference on Technological Advances of Thin Films & Surface Coatings
150	2012	Local stress determination in Shallow Trench Insulator structures with one-side and two-sides Pad-SiN layer by Polarized micro-Raman spectroscopy extraction and mechanical modelization	M.-H. Liao; MING-HAN LIAO	The 6th International Conference on Technological Advances of Thin Films & Surface Coatings
151	2012	Optimal Si-SiGe hetero-structure thin-film solar cell with theoretical calculation and quantitative analysis	M.-H. Liao; C.-H. Chen; L.-C. Chang; C. Yang; S.-C. Kao; C.-F. Hsieh; MING-HAN LIAO	2012 International Conference on Solid State Devices and Materials (SSDM)
152	2012	A novel technique to fabricate 28 nm p-MOSFETs possessing gate oxide integrity on an embedded SiGe channel without silicon surface passivation	M. H.Liao ; M. H. Yu; T. C. Huang; L. T. Wang; T. L. Lee; S. M. Jang; H. C.Cheng	Journal of Physics D: Applied Physics
153	2012	Effect of hydrogen participation on the improvement in electrical characteristics of HfO2 gate dielectrics by post-deposition remote N2, N2/H2, and NH3 plasma treatments	M. H.Liao ; Li-Tien Huang; Ming-Lun Chang; Jhih-Jie Huang; Chin-Lung Kuo; Hsin-ChihLin; Min-Hung Lee; Miin-Jang Chen	Journal of Physics D: Applied Physics
154	2012	The systematic study and simulation modeling on nano-level dislocation edge stress effects	Liao, M.-H.; Chen, C.-H.; Chang, L.-C.; Yang, C.; LiaoMH ; ChenCH	Journal of Applied Physics	10	5
155	2012	A novel stress design for the type-II hetero-junction solar cell with superior performance	Liao, M.-H.; Chen, C.-H.; Chang, L.-C.; Yang, C.; LiaoMH ; ChenCH	Journal of Applied Physics	6	4
156	2011	Si/SiGe hetero-junction solar cell with optimization design and theoretical analysis	Chang, S.T.; Liao, M.H.; Lin, W.-K.; MING-HAN LIAO	Thin Solid Films
157	2011	The investigation of optimal Si-sige hetero-structure thin-film solar cell with theoretical calculation and quantitative analysis	Liao, M.H.; Chen, C.H.; MING-HAN LIAO	IEEE Transactions on Nanotechnology
158	2011	Local stress determination in Shallow Trench Insulator structures with one-side and two-sides Pad-SiN layer by polarized micro-Raman spectroscopy extraction and mechanical modelization	Liao, M.H. ; Chang, L.C.	2011 International Semiconductor Device Research Symposium	0	0
159	2011	High-efficient Si nanotextured light-emitting diodes and solar cells with obvious photonic crystal effect	Han Liao, M.; MING-HAN LIAO	IEEE Transactions on Nanotechnology
160	2011	The effect of surface treatment on omni-directional efficiency of the silicon solar cells with micro-spherical texture/ITO stacks	Chen, C.-H.; Juan, P.-C.; Liao, M.-H.; Tsai, J.-L.; Hwang, H.-L.; MING-HAN LIAO	Solar Energy Materials and Solar Cells
161	2011	An Investigation on the Light-Emission Mechanism of Metal-Insulator-Semiconductor Light-Emitting Diodes with Different SiGe Quantum Well Structures	M.-H. Liao; L. C. Chang; MING-HAN LIAO	2011 International Semiconductor Device Research Symposium (ISDRS)
162	2010	Strain engineering of nanoscale Si MOS devices	Huang, J.; Chang, S.-T.; Hsieh, B.-F.; Liao, M.-H.; Wang, W.-C.; Lee, C.-C.; MING-HAN LIAO	Thin Solid Films
163	2010	Analysis of breakdown characteristics in high-k dielectrics under electrostatic discharge impulse stress	Chun-Heng Chen; Ming Han Liao; Fu-Chien Chiu; Huey-Liang Hwang; MING-HAN LIAO	J. Appl. Phys
164	2010	High efficient Si nano-textured light-emitting diodes and solar cells with obvious photonic crystal effect	Liao, M.H.; Wang, W.-C.; Tsai, H.R.; Chang, S.T.; MING-HAN LIAO	IEEE Photovoltaic Specialists Conference
165	2010	Analysis of breakdown characteristics in high-k dielectrics under electrostatic discharge impulse stress	Chen, C.-H.; Liao, M.H.; Chiu, F.-C.; Hwang, H.-L.; MING-HAN LIAO	Journal of Applied Physics
166	2010	The investigation of optimal Si-Sigh hetero-stucture thin-film solar cell with theoretical calculation and quantitative analysis	Liao, M.H. ; Ho, W.S.; Chen, Y.-Y.; Chang, S.T.	IEEE Photovoltaic Specialists Conference	0	0
167	2010	Strain Engineering of Nanoscale Strained Si MOS Devices	B.-F. Hsieh; S. T. Chang; W.-C.Wang; M.-H. Liao; C.-C. Lee; J. Huang; MING-HAN LIAO	Thin Solid Films
168	2009	The Dependence of the Performance of Strained NMOSFETs on Channel Width	Lingyen Yeh; Ming Han Liao; Chun Heng Chen; Jun Wu; Joseph Ya-min Lee; Chee Wee Liu; T. L. Lee; M. S. Liang; MING-HAN LIAO	IEEE Trans. on Electron Devices
169	2009	The correlation between trap states and mechanical reliability of amorphous Si:H TFTS for flexible electronics	Lee, M.H.; Chang, S.T.; Weng, S.-C.; Liu, W.-H.; Chen, K.-J.; Ho, K.-Y.; Liao, M.H.; Huang, J.-J.; Hu, G.-R.; MING-HAN LIAO	IEEE International Reliability Physics Symposium Proceedings
170	2009	Carrier backscattering characteristics of nanoscale strained complementary metal-oxide-semiconductor devices featuring the optimal stress engineering	Chang, S.-T.; Liao, M.-H.; Lee, C.-C.; Huang, J.; Wang, W.-C.; MING-HAN LIAO	Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics	2	0
171	2009	Local stress determination in shallow trench insulator structures with one side and two sides pad SiN layer by polarized micro-Raman spectroscopy extraction and mechanical modelization	M. H. Liao; MING-HAN LIAO	J. Appl. Phys
172	2009	Carrier backscattering characteristics of nanoscale strained complementary metal-oxide-semiconductor devices featuring the optimal stress engineering	Shu-Tong Chang; Ming-Han Liao; Chang-Chun Lee; Jacky Huang; Bing-Fong Hsieh; MING-HAN LIAO	JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
173	2009	The dependence of the performance of strained NMOSFETs on channel width	Yeh, L.; Liao, M.H. ; Chen, C.H.; Wu, J.; Lee, J.Y.-M.; Liu, C.W.; Lee, T.L.; CHEE-WEE LIU	IEEE Transactions on Electron Devices	4	4
174	2009	An Investigation on the Light-Emission Mechanism of Metal-Insulator-Semiconductor Light-Emitting Diodes with Different SiGe Quantum Well Structures	M. H. Liao; MING-HAN LIAO	Applied Physics Letters
175	2009	An investigation about the limitation of strained-Si technology	Liao, M.H.; Yeh, L.; Lu, J.C.; Yu, M.H.; Wang, L.T.; Wu, J.; Jeng, P.-R.; Lee, T.-L.; Jang, S.; MING-HAN LIAO	International Symposium on VLSI Technology, Systems, and Applications
176	2008	2.0 μm electroluminescence from Si/ Si0.2 Ge0.8 type II heterojunctions	Liao, M.H.; Cheng, T.-H.; Liu, C.W.; Yeh, L.; Lee, T.-L.; CHEE-WEE LIU ; MING-HAN LIAO	Journal of Applied Physics	22	19
177	2008	Superior n-MOSFET performance by optimal stress design	Liao, M.H. ; Yeh, L.; Lee, T.-L.; Liu, C.W.; CHEE-WEE LIU	IEEE Electron Device Letters	15	12
178	2008	SiGe/Si quantum-dot infrared photodetectors with δ doping	Lin, C.-H.; Yu, C.-Y.; Chang, C.-C.; Lee, C.-H.; Yang, Y.-J.; Ho, W.S.; Chen, Y.-Y.; Liao, M.H. ; Cho, C.-T.; Peng, C.-Y.; CHEE-WEE LIU	IEEE Transactions on Nanotechnology	6	6
179	2008	2 um electroluminescence from the Si/Si0.2Ge0.8 type II heterojunction	M. H. Liao; T.-H. Cheng; C. W. Liu; Lingyen Yeh; T.-L. Lee; M.-S. Liang; MING-HAN LIAO	J. Appl. Phys
180	2008	Digital communication using Ge metal-insulator-semiconductor light-emitting diodes and photodetectors	Cheng, T.-H.; Liao, M.H.; Yeh, L.; Lee, T.-L.; Liang, M.-S.; CHEE-WEE LIU ; MING-HAN LIAO	Journal of Applied Physics	8	7
181	2008	Gate width dependence on backscattering characteristics in the nanoscale strained complementary metal-oxide-semiconductor field-effect transistor	Liao, M.H.; Liu, C.W.; Yeh, L.; Lee, T.-L.; CHEE-WEE LIU ; MING-HAN LIAO	Applied Physics Letters	13	11
182	2008	Blue electroluminescence from metal/oxide/6H-SiC tunneling diodes	Jan, S.-R.; Cheng, T.-H. ; Hung, T.-A.; Kuo, P.-S.; Liao, M.H. ; Deng, Y.; CHEE-WEE LIU	IEEE Transactions on Electron Devices	3	3
183	2008	SiGe/Si Quantum-Dot Infrared Photodetectors With δ Doping	Chu-Hsuan Lin; MING-HAN LIAO	IEEE Nanotechnology
184	2008	Optimal stress design in p-MOSFET with superior performance	Liao, M.H.; MING-HAN LIAO	IEEE Transactions on Electron Devices
185	2007	Superior n-MOSFET performance by optimal stress design	Yang, Y.-J.; Liao, M.H. ; Liu, C.W.Yeh, L., Lee, T.-L., Liang, M.-S.; Yeh, L.; Lee, T.-L.; CHEE-WEE LIU	2007 International Semiconductor Device Research Symposium	1	0
186	2007	Characterization of the Ultrathin HfO2 and Hf-Silicate Films Grown by Atomic Layer Deposition	Chen, Tze Chiang; Peng, Cheng-Yi; Tseng, Chih-Hung; Liao, Ming-Han ; Chen, Mei-Hsin; Wu, Chih-I ; Chern, Ming-Yau ; Tzeng, Pei-Jer; Liu, Chee Wee	IEEE Transactions on Electron Devices	33	30
187	2007	The intermixing and strain effects on electroluminescence of SiGe dots	MING-HAN LIAO ; Lee, C.-H.; Hung, T. A.; CHEE-WEE LIU	Journal of Applied Physics	29	29
188	2007	Electrically pumped Ge laser at room temperature	Cheng, T.-H.; Kuo, P.-S.; Lee, C.T.; Liao, M.H. ; Hung, T.A.; CHEE-WEE LIU	International Electron Devices Meeting	9	0
189	2007	Electroluminescence from strained SiGe quantum dot light-emitting diodes	Cheng, T.-H.; Liao, M.H. ; CHEE-WEE LIU	7th IEEE International Conference on Nanotechnology - IEEE-NANO 2007	0	0
190	2007	Blue electroluminescence from metal/oxide/6H-SiC tunneling diodes	Jan, S.-R.; Cheng, T.-H.; Liao, M.H. ; Hung, T.-A.; Deng, Y.; CHEE-WEE LIU	2007 7th IEEE International Conference on Nanotechnology - IEEE-NANO 2007	0	0
191	2006	Buckling characteristics of SiGe layers on viscous oxide	Yu, C.-Y.; Lee, C.-J.; Lee, C.-Y.; Lee, J.-T.; MING-HAN LIAO ; CHEE-WEE LIU	Journal of Applied Physics	3	3
192	2006	Electroluminescence from the Ge quantum dot metal-oxide-semiconductor tunneling diodes	M. H. Liao; C.-Y. Yu; T.-H. Guo; C.-H. Lin; C. W. Liu; MING-HAN LIAO	IEEE Electron Device Letters
193	2006	strained Pt Schottky diodes on n-type Si and Ge	M. H. Liao; P.-S. Kuo; S.-R. Jan; S.-T. Chang; C. W. Liu; MING-HAN LIAO	Appl. Phys. Lett.,
194	2006	Strained Pt Schottky diodes on n-type Si and Ge	Liao, M.H. ; Chang, S.T.; Kuo, P.S.; Wu, H.-T.; Peng, C.-Y.; Liu, C.W.	Third International SiGe Technology and Device Meeting	0
195	2006	The process and optoelectronic characterization of Ge-on-insulator	Lin, C.-H.; Yu, C.-Y.; Liao, M.H. ; Huang, C.-F.; Lee, C.-J.; Lee, C.-Y.; CHEE-WEE LIU	ECS Transactions	1	0
196	2006	Infrared emission from Ge metsl-isulator-semiconductor tunneling diodes	M. H. Liao; T.-H. Cheng; C. W. Liu; MING-HAN LIAO	Appl. Phys. Lett.,
197	2006	Electroluminescence from the Ge quantum dot MOS tunneling diodes	MING-HAN LIAO ; Yu, C.-Y.; Guo, T.-H.; Lin, C.-H.; CHEE-WEE LIU	IEEE Electron Device Letters	30	29
198	2006	Promising a-Si:H TFTs with high mechanical reliability for flexible display	Lee, M.H.; Ho, K.-Y.; Chen, P.-C.; Cheng, C.-C.; Chang, S.T.; Tang, M.; Liao, M.H. ; Yeh, Y.-H.	International Electron Devices Meeting	11	0
199	2006	Electroluminescence from the Ge quantum dot metal-oxide-semiconductor tunneling diodes	Liao, M.H. ; Cheng, T.-H.; Chen, T.C.; Lai, C.-H.; Lee, C.-H.; Liu, C.W.	Third International SiGe Technology and Device Meeting	0
200	2006	Infrared emission from Ge metal-insulator-semiconductor tunneling diodes	MING-HAN LIAO ; Cheng, T.-H.; CHEE-WEE LIU	Applied Physics Letters	29	31
201	2005	Buckled SiGe layers by the oxidation of SiGe on viscous SiO2 layers	Yu, C.-Y.; Chen, P.-W.; Jan, S.-R.; MING-HAN LIAO ; Liao, Kao-Feng; CHEE-WEE LIU	Applied Physics Letters	13	12
202	2005	Novel schottky barrier strained germanium PMOS	Peng, C.-Y.; Yuan, F.; Lee, M.H.; Yu, C.-Y.; Maikap, S.; Liao, M.H. ; Chang, S.T.; Liu, C.W.	2005 International Semiconductor Device Research Symposium	2
203	2005	Electroluminescence from metal/oxide/strained-Si tunneling diodes	MING-HAN LIAO ; MIIN-JANG CHEN ; Chen, T. C.; Wang, P. L.; CHEE-WEE LIU	Applied Physics Letters	64	42
204	2005	Abnormal hole mobility of biaxial strained Si	MING-HAN LIAO ; Chang, S. T.; Lee, M. H.; Maikap, S.; CHEE-WEE LIU	Journal of Applied Physics	19	20
205	2005	2 μm emission from Si/Ge heterojunction LED and up to 1.55 μm detection by GOI detectors with strain-enhanced features	Liao, M.H. ; Yu, C.-Y.; Huang, C.-F.; Lin, C.-H.; Lee, C.-J.; Yu, M.-H.; Chang, S.T.; Liang, C.-Y.; Lee, C.-Y.; Guo, T.-H.; Chang, C.-C.; Liu, C.W.	International Electron Devices Meeting	2
206	2004	Package-strain-enhanced device and circuit performance	Maikap, S.; MING-HAN LIAO ; Yuan, F.; Lee, M.H.; Huang, C.-F.; Chang, S.T.; CHEE-WEE LIU	Technical Digest - International Electron Devices Meeting, IEDM	21	0
207	2004	BICMOS devices under mechanical strain	Liu, C.W.; Maikap, S.; Liao, M.H. ; Yuan, F.; Lee, M.H.	Electrochemical Society	5
208	1996	Analysis of axial cracks in hollow cylinders subjected to thermal shock by using the thermal weight function method	Ma, C.-C.; CHIEN-CHING MA ; MING-HAN LIAO	Journal of Pressure Vessel Technology, Transactions of the ASME	6	6

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