第 1 到 22 筆結果,共 22 筆。
公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 | |
---|---|---|---|---|---|---|---|
1 | 2018 | Ferroelectric Al:HfO <inf>2</inf> negative capacitance FETs | Lee, M.H.; Chen, P.-G.; Fan, S.-T.; Chou, Y.-C.; Kuo, C.-Y.; Tang, C.-H.; Chen, H.-H.; Gu, S.-S.; Hong, R.-C.; Wang, Z.-Y.; Chen, S.-Y.; Liao, C.-Y.; Chen, K.-T.; Chang, S.T.; Liao, M.-H. ; Li, K.-S.; CHEE-WEE LIU | International Electron Devices Meeting | 22 | 0 | |
2 | 2007 | Characteristics of strained-germanium p- and n-channel field effect transistors on a Si (1 1 1) substrate | CHEE-WEE LIU ; Maikap, S.; Lee, M.H.; Chang, S.T.; CHEE-WEE LIU | Semiconductor Science and Technology | |||
3 | 2007 | Electron mobility enhancement in STRAINED-Germanium NMOSFETs and impact of strain engineering in ballistic regime | CHEE-WEE LIU ; Yang, Y.-J.; Chang, S.T.; CHEE-WEE LIU | International Symposium on VLSI Technology, Systems, and Applications | |||
4 | 2006 | Strained Pt Schottky diodes on n-type Si and Ge | CHEE-WEE LIU ; Liao, M.H.; Kuo, P.-S.; Jan, S.-R.; Chang, S.T.; CHEE-WEE LIU | Applied Physics Letters | |||
5 | 2006 | The interface properties of SiO<inf>2</inf>/strained-si with carbon incorporation surface channel MOSFETs | CHEE-WEE LIU ; Lee, M.H.; Chang, S.T.; Maikap, S.; Yu, C.-Y.; CHEE-WEE LIU | Third International SiGe Technology and Device Meeting, ISTDM 2006 | |||
6 | 2006 | Strained Pt Schottky diodes on n-type Si and Ge | CHEE-WEE LIU ; Liao, M.H.; Chang, S.T.; Kuo, P.S.; Wu, H.-T.; Peng, C.-Y.; CHEE-WEE LIU | Third International SiGe Technology and Device Meeting, ISTDM 2006 | |||
7 | 2005 | Calculation of the electron mobility in silicon inversion layers: Dependence on surface orientation, channel direction, and stress | CHEE-WEE LIU ; Yang, I.-J.; Peng, C.-Y.; Chang, S.T.; CHEE-WEE LIU | 2005 International Semiconductor Device Research Symposium | |||
8 | 2005 | Novel schottky barrier strained germanium PMOS | CHEE-WEE LIU ; Peng, C.-Y.; Yuan, F.; Lee, M.H.; Yu, C.-Y.; Maikap, S.; Liao, M.H.; Chang, S.T.; CHEE-WEE LIU | 2005 International Semiconductor Device Research Symposium | |||
9 | 2004 | Hole effective mass in strained Si<inf>1-x</inf>C<inf>x</inf> alloys | CHEE-WEE LIU ; Lin, C.Y.; Chang, S.T.; CHEE-WEE LIU | Journal of Applied Physics | |||
10 | 2004 | Strained Si<inf>1-x</inf>C<inf>x</inf> field effect transistor on SiGe substrate | CHEE-WEE LIU ; Chang, S.T.; Lee, M.-H.; Lu, S.C.; CHEE-WEE LIU | Proceedings of Electrochemical Society | |||
11 | 2004 | Base transit time of graded-base Si/SiGe HBTs considering recombination lifetime and velocity saturation | CHEE-WEE LIU ; Chang, S.T.; Liu, C.W.; Lu, S.C.; CHEE-WEE LIU | Solid-State Electronics | |||
12 | 2004 | Package-strain-enhanced device and circuit performance | Maikap, S.; MING-HAN LIAO ; Yuan, F.; Lee, M.H.; Huang, C.-F.; Chang, S.T.; CHEE-WEE LIU | Technical Digest - International Electron Devices Meeting, IEDM | 21 | 0 | |
13 | 2004 | Novel MIS Ge-Si quantum-dot infrared photodetectors | Hsu, B.-C.; Lin, C.-H.; Kuo, P.-S.; Chang, S.T.; Chen, P.S.; CHEE-WEE LIU ; Lu, J.-H.; CHIEH-HSIUNG KUAN | IEEE Electron Device Letters | 21 | 21 | |
14 | 2003 | MOS Ge/Si quantum dot infrared photodetectors with quantum dot and wetting layer responses | Hsu, B.C.; Chang, S.T.; Kuo, P.S.; Chen, P.S.; Liu, C.W.; Lu, J.H.; CHEE-WEE LIU | Semiconductor Device Research Symposium, 2003 International | 0 | 0 | |
15 | 2003 | A high efficient 820 nm MOS Ge quantum dot photodetector | CHEE-WEE LIU ; Hsu, B.-C.; Chang, S.T.; Chen, T.-C.; Kuo, P.-S.; Chen, P.S.; Pei, Z.; CHEE-WEE LIU | IEEE Electron Device Letters | |||
16 | 2003 | Mextram modeling of Si/SiGe heterojunction phototransistors | CHEE-WEE LIU ; Yuan, F.; Pei, Z.; Shi, J.W.; Chang, S.T.; CHEE-WEE LIU | 2003 International Semiconductor Device Research Symposium, ISDRS 2003 | |||
17 | 2003 | Buried oxide thickness effect and lateral scaling of SiGe HBT on SO1 substrate | CHEE-WEE LIU ; Chang, S.T.; Liu, Y.H.; CHEE-WEE LIU | 2003 International Semiconductor Device Research Symposium, ISDRS 2003 - Proceedings | |||
18 | 2002 | Energy band structure of strained Si 1-xC x alloys on Si (001) substrate | CHEE-WEE LIU ; Chang, S.T.; Lin, C.Y.; CHEE-WEE LIU | Journal of Applied Physics | |||
19 | 2002 | High efficient 820 nm MOS Ge quantum dot photodetectors for short-reach integrated optical receivers with 1300 and 1550 nm sensitivity | CHEE-WEE LIU ; Hsu, B.-C.; Chang, S.T.; Shie, C.-R.; Lai, C.-C.; Chen, P.S.; CHEE-WEE LIU | International Electron Devices Meeting, IEDM | |||
20 | 2001 | Optimum Ge profile design for base transit time minimization of SiGe HBT | CHEE-WEE LIU ; Chang, S.T.; Liu, C.W.; Lin, C.-H.; CHEE-WEE LIU | Asia-Pacific Microwave Conference Proceedings, APMC | |||
21 | 2001 | Effect of recombination lifetime and velocity saturation on Ge profile design for the base transit time of Si/SiGe HBTs | CHEE-WEE LIU ; Chang, S.T.; Liu, C.W.; Lu, S.C.; CHEE-WEE LIU | 2001 International Semiconductor Device Research Symposium, ISDRS 2001 | |||
22 | Dec | Novel electroluminescence from metal-insulator-semiconductor (MIS) structures on Si | CHING-FUH LIN ; MIIN-JANG CHEN ; Liang, Eih-Zhe; Liu, W.T.; Chang, S.T.; CHEE-WEE LIU | Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD | 0 | 0 |