第 1 到 32 筆結果,共 32 筆。
公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 | |
---|---|---|---|---|---|---|---|
1 | 2008 | Formation of relaxed SiGe on the buffer consists of modified SiGe stacked layers by Si pre-intermixing | CHEE-WEE LIU ; Chen, P.S.; Lee, S.W.; Lee, M.H.; CHEE-WEE LIU | Applied Surface Science | |||
2 | 2008 | Modified growth of Ge quantum dots using C<inf>2</inf>H<inf>4</inf> mediation by ultra-high vacuum chemical vapor deposition | CHEE-WEE LIU ; Lee, S.W.; Chen, P.S.; Cheng, S.L.; Lee, M.H.; Chang, H.T.; Lee, C.-H.; CHEE-WEE LIU | Applied Surface Science | |||
3 | 2006 | Field-emission properties of self-assembled Si-capped Ge quantum dots | CHEE-WEE LIU ; Lee, S.W.; Chueh, Y.L.; Chen, H.C.; Chen, L.J.; Chen, P.S.; Chou, L.J.; CHEE-WEE LIU | Thin Solid Films | |||
4 | 2006 | Hole confinement and 1/f noise characteristics of SiGe double-quantum-well p-Type metal-oxide-semiconductor field-effect transistors | CHEE-WEE LIU ; Lin, Y.M.; San Lein, W.U.; Chang, S.J.; Chen, P.S.; CHEE-WEE LIU | Japanese Journal of Applied Physics Part1 | |||
5 | 2006 | Growth of high-quality SiGe films with a buffer layer containing Ge quantum dots | CHEE-WEE LIU ; Lee, S.W.; Chen, P.S.; Chien, T.Y.; Chen, L.J.; Chia, C.T.; CHEE-WEE LIU | Thin Solid Films | |||
6 | 2006 | Imapct of SiN on performance in novel CMOS architecture using substrate strained-SiGe and mechanical strained-si technology | CHEE-WEE LIU ; Lin, Y.M.; Wu, S.L.; Chang, S.J.; Chen, P.S.; CHEE-WEE LIU | Third International SiGe Technology and Device Meeting, ISTDM 2006 | |||
7 | 2006 | Growth of high-quality relaxed SiGe films with an intermediate Si layer for strained Si n-MOSFETs | CHEE-WEE LIU ; Chen, P.S.; Lee, S.W.; Lee, M.H.; CHEE-WEE LIU | Semiconductor Science and Technology | |||
8 | 2005 | Formation of SiCH <inf>6</inf>-mediated Ge quantum dots with strong field emission properties by ultrahigh vacuum chemical vapor deposition | CHEE-WEE LIU ; Lee, S.W.; Chueh, Y.L.; Chen, L.J.; Chou, L.J.; Chen, P.S.; Tsai, M.-J.; CHEE-WEE LIU | Journal of Applied Physics | |||
9 | 2005 | Threading dislocation induced low frequency noise in strained-Si nMOSFETs | CHEE-WEE LIU ; Hua, W.-C.; Lee, M.H.; Chen, P.S.; Tsai, M.-J.; CHEE-WEE LIU | IEEE Electron Device Letters | |||
10 | 2005 | Formation of high-quality and relaxed SiGe buffer layer with H-implantation and subsequent thermal annealing | CHEE-WEE LIU ; Liao, K.F.; Chen, P.S.; Lee, S.W.; Chen, L.J.; CHEE-WEE LIU | Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms | |||
11 | 2005 | Ultra-high-vacuum chemical vapor deposition of hetero-epitaxial Si <inf>1-x-y</inf> Ge <inf>x</inf> C <inf>y</inf> thin films on Si(0 0 1) with ethylene (C <inf>2</inf> H <inf>4</inf> ) precursor as carbon source | CHEE-WEE LIU ; Chen, P.S.; Lee, S.W.; Liu, Y.H.; Lee, M.H.; Tsai, M.-J.; CHEE-WEE LIU | Materials Science in Semiconductor Processing | |||
12 | 2005 | SiGe/Si PMOSFET using graded channel technique | CHEE-WEE LIU ; Lin, Y.M.; Wu, S.L.; Chang, S.J.; Chen, P.S.; CHEE-WEE LIU | Materials Science in Semiconductor Processing | |||
13 | 2005 | Strained CMOS technology with Ge | CHEE-WEE LIU ; Chen, P.S.; Lee, M.H.; Lee, S.W.; Liu, C.W.; Tsai, M.-J.; CHEE-WEE LIU | Proceedings of Electrochemical Society | |||
14 | 2005 | Growth of strained Si on high-quality relaxed Si1-x Gex with an intermediate Si1-y Cy layer | CHEE-WEE LIU ; Lee, S.W.; Chueh, Y.L.; Chen, L.J.; Chou, L.J.; Chen, P.S.; Lee, M.H.; Tsai, M.-J.; CHEE-WEE LIU | Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films | |||
15 | 2004 | The evolution of electroluminescence in Ge quantum-dot diodes with the fold number | Peng, Y.H.; Hsu, C.-H.; CHIEH-HSIUNG KUAN ; CHEE-WEE LIU ; Chen, P.S.; Tsai, M.-J.; Suen, Y.W. | Applied Physics Letters | 18 | 17 | |
16 | 2004 | The growth of high-quality SiGe films with an intermediate Si layer | CHEE-WEE LIU ; Lee, S.W.; Chen, P.S.; Tsai, M.-J.; Chia, C.T.; Liu, C.W.; Chen, L.J.; CHEE-WEE LIU | Thin Solid Films | |||
17 | 2004 | Ge outdiffusion effect on flicker noise in strained-Si nMOSFETs | CHEE-WEE LIU ; Hua, W.-C.; Lee, M.H.; Chen, P.S.; Maikap, S.; Liu, C.W.; Chen, K.M.; CHEE-WEE LIU | IEEE Electron Device Letters | |||
18 | 2004 | Recessed oxynitride dots on self-assembled Ge quantum dots grown by LPD | CHEE-WEE LIU ; Kuo, P.-S.; Hsu, B.-C.; Chen, P.-W.; Chen, P.S.; CHEE-WEE LIU | Electrochemical and Solid-State Letters | |||
19 | 2004 | Improvement of photoluminescence efficiency in stacked Ge/Si/Ge quantum dots with a thin Si spacer | CHEE-WEE LIU ; Chen, P.S.; Lee, S.W.; Peng, Y.H.; Liu, C.W.; Tsai, M.-J.; CHEE-WEE LIU | Physica Status Solidi (B) Basic Research | |||
20 | 2004 | Evidence of SiSiGe heterojunction roughness scattering | CHEE-WEE LIU ; Liu, C.W.; Lee, M.H.; Lee, Y.C.; Chen, P.S.; Yu, C.-Y.; Wei, J.-Y.; Maikap, S.; CHEE-WEE LIU | Applied Physics Letters | |||
21 | 2004 | Improved growth of Ge quantum dots in Ge/Si stacked layers by pre-intermixing treatments | CHEE-WEE LIU ; Lee, S.W.; Chen, L.J.; Chen, P.S.; Tsai, M.-J.; Liu, C.W.; Chen, W.Y.; Hsu, T.M.; CHEE-WEE LIU | Applied Surface Science | |||
22 | 2004 | Novel MIS Ge-Si quantum-dot infrared photodetectors | Hsu, B.-C.; Lin, C.-H.; Kuo, P.-S.; Chang, S.T.; Chen, P.S.; CHEE-WEE LIU ; Lu, J.-H.; CHIEH-HSIUNG KUAN | IEEE Electron Device Letters | 21 | 21 | |
23 | 2004 | Post deposition annealing effects on the reliability of ALD HfO<inf>2</inf> films on strained-Si<inf>0.8</inf>Ge<inf>0.2</inf> layers | CHEE-WEE LIU ; Tzeng, P.J.; Maikap, S.; Lai, W.Z.; Liang, C.S.; Chen, P.S.; Lee, L.S.; CHEE-WEE LIU | International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA | |||
24 | 2004 | Electroluminescence evolution of Ge quantum-dot diodes with the fold number | CHEE-WEE LIU ; Chen, K.T.; Peng, Y.H.; Hsu, C.H.; Kuan, C.H.; Liu, C.W.; Chen, P.S.; CHEE-WEE LIU | OSA Trends in Optics and Photonics Series | |||
25 | 2003 | MOS Ge/Si quantum dot infrared photodetectors with quantum dot and wetting layer responses | Hsu, B.C.; Chang, S.T.; Kuo, P.S.; Chen, P.S.; Liu, C.W.; Lu, J.H.; CHEE-WEE LIU | Semiconductor Device Research Symposium, 2003 International | 0 | 0 | |
26 | 2003 | Optimal SiGe:C HBT module for BiCMOS applications | CHEE-WEE LIU ; Lai, L.S.; Liang, C.S.; Chen, P.S.; Hsu, Y.M.; Liu, Y.H.; Tseng, Y.T.; Lu, S.C.; Tsai, M.-J.; Liu, C.W.; Rosenblad, C.; Buschbaum, T.; Buschbeck, M.; Ramm, J.; CHEE-WEE LIU | International Symposium on VLSI Technology, Systems, and Applications, Proceedings | |||
27 | 2003 | A High-Performance SiGe-Si Multiple-Quantum-Well Heterojunction Phototransistor | CHEE-WEE LIU ; Pei, Z.; Liang, C.S.; Lai, L.S.; Tseng, Y.T.; Hsu, Y.M.; Chen, P.S.; Lu, S.C.; Tsai, M.-J.; CHEE-WEE LIU | IEEE Electron Device Letters | |||
28 | 2003 | A high efficient 820 nm MOS Ge quantum dot photodetector | CHEE-WEE LIU ; Hsu, B.-C.; Chang, S.T.; Chen, T.-C.; Kuo, P.-S.; Chen, P.S.; Pei, Z.; CHEE-WEE LIU | IEEE Electron Device Letters | |||
29 | 2003 | Self-assembled nanorings in Si-capped Ge quantum dots on (001)Si | CHEE-WEE LIU ; Lee, S.W.; Chen, L.J.; Chen, P.S.; Tsai, M.-J.; Liu, C.W.; Chien, T.Y.; Chia, C.T.; CHEE-WEE LIU | Applied Physics Letters | |||
30 | 2002 | High efficient 820 nm MOS Ge quantum dot photodetectors for short-reach integrated optical receivers with 1300 and 1550 nm sensitivity | CHEE-WEE LIU ; Hsu, B.-C.; Chang, S.T.; Shie, C.-R.; Lai, C.-C.; Chen, P.S.; CHEE-WEE LIU | International Electron Devices Meeting, IEDM | |||
31 | 2002 | High efficient 850 nm and 1,310 nm multiple quantum well SiGe/Si heterojunction phototransistors with 1.25 Plus GHz bandwidth (850 nm) | CHEE-WEE LIU ; Pei, Z.; Liang, C.S.; Lai, L.S.; Tseng, Y.T.; Hsu, Y.M.; Chen, P.S.; Lu, S.C.; Liu, C.M.; Tsai, M.-J.; CHEE-WEE LIU | International Electron Devices Meeting, IEDM | |||
32 | 2002 | High Throughput UHV/CVD SiGe and SiGe:C Process for sige HBT and strained Si FET | CHEE-WEE LIU ; Chen, P.S.; Tseng, Y.T.; Tsai, M.-J.; CHEE-WEE LIU | 2002 Semiconductor Manufacturing Technology Workshop, SMTW 2002 |