第 1 到 42 筆結果,共 42 筆。
公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 | |
---|---|---|---|---|---|---|---|
1 | 1999 | 半導體關鍵設備研發(III)─子計畫二:0.35UM或更高技術之單晶圓化學氣相沉積反應器 | 劉致為 | ||||
2 | 1999 | Light emission and detection by metal oxide silicon tunneling diodes | CHEE-WEE LIU ; Liu, C.W.; Lee, M.H.; Lin, C.F.; Lin, I.C.; Liu, W.T.; Lin, H.H.; CHEE-WEE LIU | International Electron Devices Meeting, IEDM | |||
3 | 1999 | Silicon surface grating formation with high power UV laser | CHEE-WEE LIU ; Chen, Cheng-Yen; Chao, Chung-Yen; Gurtler, Steffen; Liu, Chee-Wee; Yang, C.C.; CHEE-WEE LIU | Proceedings of SPIE - The International Society for Optical Engineering | |||
4 | 1999 | Substitutional carbon reduction in SiGeC alloys grown by rapid thermal chemical vapor deposition | CHEE-WEE LIU ; Liu, C.W.; Tseng, Y.D.; Huang, Y.S.; CHEE-WEE LIU | Applied Physics Letters | |||
5 | 1999 | Modeling and optimization of wafer-level spatial uniformity with the use of rational subgrouping | CHEE-WEE LIU ; Guo, Ruey-Shan; Chen, Argon; Liu, Cheewee; Lin, A.; Lan, M.; CHEE-WEE LIU | IEEE International Symposium on Semiconductor Manufacturing Conference | |||
6 | 1999 | Thermal stability of Si/Si1-x-yGexCy/Si quantum wells grown by rapid thermal chemical vapor deposition | Liu, C.W.; Tseng, Y.D.; Chern, M.Y.; Chang, C.L.; MING-YAU CHERN ; CHEE-WEE LIU | Journal of Applied Physics | 13 | 15 | |
7 | 1999 | 具網路結合功能之半導體製造集結式機台─子計畫二:用於12吋晶圓製造之前段製程技術(1/3) | 劉致為 | ||||
8 | 1998 | 以矽晶圓為基礎的長波長紅外線偵測器(新型SiGeC 材料之研究) | 劉致為 | ||||
9 | 1998 | 半導體關鍵設備研發-子計畫二﹕ 0.35:m 或更高技術之單晶圓化學氣相沉積反應器( I ) | 劉致為 | ||||
10 | 1998 | The design of rapid thermal process for large diameter applications [semiconductor wafer processing] | Liu, C.W.; Lee, M.H.; Chao, C.Y.; Chen, C.Y.; Yang, C.C.; Chang, Y.; CHEE-WEE LIU ; CHIH-CHUNG YANG | Semiconductor Manufacturing Technology Workshop | 0 | 0 | |
11 | 1998 | Laser ablated silicon gratings for temperature measurements | CHEE-WEE LIU ; Chao, Chung-Yen; Chen, Cheng-Yen; Liu, Chee-Wee; Chang, Yih; Yang, C.C.; CHEE-WEE LIU | Conference on Lasers and Electro-Optics Europe | |||
12 | 1998 | Valence band properties of relaxed Ge1-xCx alloys | CHEE-WEE LIU ; Lin, C.Y.; Liu, C.W.; Lee, L.J.; CHEE-WEE LIU | Materials Chemistry and Physics | |||
13 | 1998 | Valence band properties of relaxed Ge<inf>1-x</inf>C<inf>x</inf> alloys | CHEE-WEE LIU ; Lin, C.Y.; Liu, C.W.; Lee, L.J.; CHEE-WEE LIU | Materials Chemistry and Physics | |||
14 | 1998 | 300 Mb/s BiCMOS EPR4 read channel for magnetic hard disks | CHEE-WEE LIU | IEEE International Solid-State Circuits Conference | |||
15 | 1998 | RTP temperature measurements using Si grating prepared by laser ablation for large diameter wafer applications | CHEE-WEE LIU ; Liu, C.W.; Lee, M.H.; Chao, C.Y.; Chen, C.Y.; Yang, C.C.; Chang, Y.; CHEE-WEE LIU | Materials Research Society Symposium | |||
16 | 1997 | 矽鍺異質電晶體之等效電路粹取與RTP製程模擬 | 劉致為 | ||||
17 | 1997 | Hole effective masses in relaxed Si1-xCx and Si1-yGey alloys | CHEE-WEE LIU ; Lin, C.Y.; CHEE-WEE LIU | Applied Physics Letters | |||
18 | 1997 | Growth and electron effective mass measurements of strained Si and Si0.94Ge0.06 on relaxed Si0.62Ge0.38 buffers grown by rapid thermal chemical vapor deposition | CHEE-WEE LIU ; Liu, C.W.; Venkataraman, V.; CHEE-WEE LIU | Materials Chemistry and Physics | |||
19 | 1997 | Hole effective masses in relaxed Si<inf>1-x</inf>C<inf>x</inf> and Si<inf>1-y</inf>Ge<inf>y</inf> alloys | CHEE-WEE LIU ; Lin, C.Y.; CHEE-WEE LIU | Applied Physics Letters | |||
20 | 1997 | Growth and electron effective mass measurements of strained Si and Si<inf>0.94</inf>Ge<inf>0.06</inf> on relaxed Si<inf>0.62</inf>Ge<inf>0.38</inf> buffers grown by rapid thermal chemical vapor deposition | CHEE-WEE LIU ; Liu, C.W.; Venkataraman, V.; CHEE-WEE LIU | Materials Chemistry and Physics | |||
21 | 1997 | Low temperature chemical vapor deposition growth of β-SiC on (100) Si using methylsilane and device characteristics | CHEE-WEE LIU ; Liu, C.W.; Sturm, J.C.; CHEE-WEE LIU | Journal of Applied Physics | |||
22 | 1997 | Growth of β-SiC on Si and poly-Si on β-SiC by rapid thermal chemical vapor deposition | CHEE-WEE LIU ; Liu, C.W.; Sturm, J.C.; CHEE-WEE LIU | Materials Research Society Symposium | |||
23 | 1997 | 半導體關鍵設備研發─子計畫二:0.35um或更高技術之單晶圓化學氣相沉積反應器(I) | 劉致為 | ||||
24 | 1997 | Direct writing of silicon gratings with highly coherent ultraviolet laser | Chao, C.-Y.; Chen, C.-Y.; CHEE-WEE LIU ; Chang, Y.; CHIH-CHUNG YANG | Applied Physics Letters | 13 | 12 | |
25 | 1997 | Direct writing of silicon gratings with highly coherent ultraviolet laser | CHEE-WEE LIU ; Chao, C.-Y.; Chen, C.-Y.; Liu, C.-W.; Chang, Y.; Yang, C.C.; CHEE-WEE LIU | Applied Physics Letters | |||
26 | 1996 | Si/Si <inf>1-x-y</inf> Ge <inf>x</inf> C <inf>y</inf> /Si heterojunction bipolar transistors | CHEE-WEE LIU ; Lanzerotti, L.D.; St. Amour, A.; Liu, C.W.; Sturm, J.C.; Watanabe, J.K.; Theodore, N.D.; CHEE-WEE LIU | IEEE Electron Device Letters | |||
27 | 1996 | High field drift velocity of 2DEG in Si/SiGe heterostructures as determined by magnetoresistance techniques | CHEE-WEE LIU ; Madhavi, S.; Venkataraman, V.; Liu, C.W.; Sturm, J.C.; CHEE-WEE LIU | Annual Device Research Conference Digest | |||
28 | 1996 | Growth and photoluminescence of high quality SiGeC random alloys on silicon substrates | CHEE-WEE LIU ; Liu, C.W.; St. Amour, A.; Sturm, J.C.; Lacroix, Y.R.J.; Thewalt, M.L.W.; Magee, C.W.; Eaglesham, D.; CHEE-WEE LIU | Journal of Applied Physics | |||
29 | 1996 | Electron cyclotron resonance in strained Si and Si<inf>0.94</inf>Ge<inf>0.06</inf> channels on relaxed Si<inf>0.62</inf>Ge<inf>0.38</inf> buffers grown by rapid thermal chemical vapor deposition | CHEE-WEE LIU ; Liu, C.W.; Venkataraman, V.; CHEE-WEE LIU | Materials Research Society Symposium | |||
30 | 1995 | Defect-free band-edge photoluminescence in SiGeC strained layers grown by rapid thermal chemical vapor deposition | CHEE-WEE LIU ; Liu, C.W.; Amour, A.St.; Sturm, J.C.; Lacroix, Y.R.J.; Thewalt, M.L.W.; CHEE-WEE LIU | Materials Research Society Symposium | |||
31 | 1995 | Erratum: Defect-free band-edge photoluminescence and band gap measurement of pseudomorphic Si<inf>1-x-y</inf>Ge<inf>x</inf>C<inf>y</inf> alloy layers on Si (100)" (Appl. Phys. Lett. (1995) 67 (3915)) | CHEE-WEE LIU ; Amour, A.St.; Liu, C.W.; Sturm, J.C.; Lacroix, Y.; Thewalt, M.L.W.; CHEE-WEE LIU | Applied Physics Letters | |||
32 | 1995 | Erratum: Defect-free band-edge photoluminescence and band gap measurement of pseudomorphic Si<inf>1-x-y</inf>Ge<inf>x</inf>C<inf>y</inf> alloy layers on Si (100)" (Appl. Phys. Lett. (1995) 67 (3915)) | CHEE-WEE LIU ; Amour, A.St.; Liu, C.W.; Sturm, J.C.; Lacroix, Y.; Thewalt, M.L.W.; CHEE-WEE LIU | Applied Physics Letters | |||
33 | 1995 | Defect-free band-edge photoluminescence and band gap measurement of pseudomorphic Si<inf>1-x-y</inf>Ge<inf>x</inf>C<inf>y</inf> alloy layers on Si (100) | CHEE-WEE LIU ; St. Amour, A.; Liu, C.W.; Sturm, J.C.; Lacroix, Y.; Thewalt, M.L.W.; CHEE-WEE LIU | Applied Physics Letters | |||
34 | 1994 | Growth and band gap of strained 〈110〉 Si<inf>1-x</inf>Ge <inf>x</inf> layers on silicon substrates by chemical vapor deposition | CHEE-WEE LIU ; Liu, C.W.; Sturm, J.C.; Lacroix, Y.R.J.; Thewalt, M.L.W.; Perovic, D.D.; CHEE-WEE LIU | Applied Physics Letters | |||
35 | 1994 | Growth and photoluminescence of strained 〈 110 〉 Si/Si<inf>1-x</inf>Ge<inf>x</inf>/Si quantum wells grown by rapid thermal chemical vapor deposition | CHEE-WEE LIU ; Liu, C.W.; Sturm, J.C.; Lacroix, Y.R.J.; Thewalt, M.L.W.; Perovic, D.D.; CHEE-WEE LIU | Materials Research Society Symposium | |||
36 | 1993 | Alloy scattering limited transport of two-dimensional carriers in strained Si<inf>1-x</inf>Ge<inf>x</inf> quantum wells | CHEE-WEE LIU ; Venkataraman, V.; Liu, C.W.; Sturm, J.C.; CHEE-WEE LIU | Applied Physics Letters | |||
37 | 1993 | Semi-insulating crystalline silicon formed by oxygen doping during low-temperature chemical vapor deposition | CHEE-WEE LIU ; Schwartz, P.V.; Liu, C.W.; Sturm, J.C.; CHEE-WEE LIU | Applied Physics Letters | |||
38 | 1993 | Photoluminescence and electroluminescence processes in Si<inf>1-x</inf>Ge<inf>x</inf>/Si heterostructures grown by chemical vapor deposition | CHEE-WEE LIU ; Sturm, J.C.; Xiao, X.; Mi, Q.; Liu, C.W.; Amour, A.St.; Matutinovic-Krstelj, Z.; Lenchyshyn, L.C.; Thewalt, M.L.W.; CHEE-WEE LIU | Materials Science and Engineering B | |||
39 | 1993 | Symmetric Si/Si<inf>1-x</inf>Ge<inf>x</inf> electron resonant tunneling diodes with an anomalous temperature behavior | Matutinović-Krstelj Ž.; CHEE-WEE LIU ; Xiao, X.; Sturm, J.C. | Applied Physics Letters | |||
40 | 1992 | Quantum confinement effects in strained silicon-germanium alloy quantum wells | CHEE-WEE LIU ; Xiao, X.; Liu, C.W.; Sturm, J.C.; Lenchyshyn, L.C.; Thewalt, M.L.W.; Gregory, R.B.; Fejes, P.; CHEE-WEE LIU | Applied Physics Letters | |||
41 | 1992 | Photoluminescence from electron-hole plasmas confined in Si/Si <inf>1-x</inf>Ge<inf>x</inf>/Si quantum wells | CHEE-WEE LIU ; Xiao, X.; Liu, C.W.; Sturm, J.C.; Lenchyshyn, L.C.; Thewalt, M.L.W.; CHEE-WEE LIU | Applied Physics Letters | |||
42 | 1987 | Characteristics of Si-doped GaAs epilayers grown by metalorganic chemical vapor deposition using a silane source | Liu, C.-W.; Chen, S.-L.; Lay, J.-P.; Lee, S.-C.; CHEE-WEE LIU ; SI-CHEN LEE ; HAO-HSIUNG LIN | Applied Physics Letters | 9 | 9 |