第 1 到 172 筆結果,共 172 筆。
公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 | |
---|---|---|---|---|---|---|---|
1 | 2024 | Graphene-All-Around Cobalt Interconnect with a Back-End-of-Line Compatible Process | Kuo, Chi Yuan; Zhu, Jia Heng; Chiu, Yun Ping; Ni, I. Chih; Chen, Mei Hsin; YUH-RENN WU ; CHIH-I WU | Nano Letters | |||
2 | 2023 | Injection mechanisms in a III -nitride light-emitting diode as seen by self-emissive electron microscopy | Tak, Tanay; Johnson, Cameron W.; Ho, Wan Ying; Wu, Feng; Sauty, Mylène; Rebollo, Steve; Schmid, Andreas K.; Peretti, Jacques; YUH-RENN WU ; Weisbuch, Claude; Speck, James S. | Physical Review Applied | |||
3 | 2023 | Carrier localization in III-nitride versus conventional III-V semiconductors: A study on the effects of alloy disorder using landscape theory and the Schrödinger equation | Tsai, Tsung Yin; Qwah, Kai Shek; Banon, Jean Philippe; Filoche, Marcel; Weisbuch, Claude; YUH-RENN WU ; Speck, James S. | Physical Review Applied | 0 | ||
4 | 2023 | The micro-LED roadmap: status quo and prospects | CHIEN-CHUNG LIN ; YUH-RENN WU ; Kuo, Hao Chung; Wong, Matthew S.; DenBaars, Steven P.; Nakamura, Shuji; Pandey, Ayush; Mi, Zetian; Tian, Pengfei; Ohkawa, Kazuhiro; Iida, Daisuke; Wang, Tao; Cai, Yuefei; Bai, Jie; Yang, Zhiyong; Qian, Yizhou; Wu, Shin Tson; Han, Jung; Chen, Chen; Liu, Zhaojun; Hyun, Byung Ryool; Kim, Jae Hyun; Jang, Bongkyun; Kim, Hyeon Don; Lee, Hak Joo; Liu, Ying Tsang; Lai, Yu Hung; Li, Yun Li; Meng, Wanqing; Shen, Haoliang; Liu, Bin; Wang, Xinran; Liang, Kai Ling; Luo, Cheng Jhih; Fang, Yen Hsiang | JPhys Photonics | 1 | 0 | |
5 | 2023 | Studies of two-dimensional material resistive random-access memory by kinetic Monte Carlo simulations | Chen, Ying Chuan; Chao, Yu Ting; Chen, Edward; CHAO-HSIN WU ; YUH-RENN WU | Physical Review Materials | 0 | 0 | |
6 | 2023 | Origins of the high-energy electroluminescence peaks in long-wavelength (∼495-685 nm) InGaN light-emitting diodes | Chow, Yi Chao; Tak, Tanay; Wu, Feng; Ewing, Jacob; Nakamura, Shuji; DenBaars, Steven P.; YUH-RENN WU ; Weisbuch, Claude; Speck, James S. | Applied Physics Letters | 2 | ||
7 | 2023 | Micromagnetic simulations for deterministic switching in SOT-MRAM cell with additional heavy metal capping strip | Kuan-hao Chiao; YUH-RENN WU | Applied Physics Letters | 0 | 0 | |
8 | 2023 | Study on the Effects of Quantum Well Location on Optical Characteristics of AlGaN/GaN Light-Emitting HEMT | Shen, Yao-Luen; Chang, Chih-Yao; Chen, Po-Liang; Tai, Cheng-Chan; Wu, Tian-Li; YUH-RENN WU ; Huang, Chih-Fang | Micromachines | 0 | 0 | |
9 | 2023 | GaN on Si RF performance with different AlGaN back barrier | Hsieh, Chang Yan; Chen, Hui Yu; Tu, Po Tsung; Chen, Jui Chin; Yang, Hsin Yun; Yeh, Po Chun; Hsieh, De; Liu, Hsueh Hsing; Fu, Yi Keng; Sheu, Shyh Shyuan; Kuo, Hao Chung; YUH-RENN WU ; Lo, Wei Chung; Chang, Shih Chieh | 2023 International VLSI Symposium on Technology, Systems and Applications, VLSI-TSA/VLSI-DAT 2023 - Proceedings | 0 | 0 | |
10 | 2023 | Optimization of Optical and Electrical Properties of 2T Textured Perovskite/Silicon Tandem Solar Cell Structure | Hsieh, Chun Hao; Huang, Jun Yu; YUH-RENN WU | Conference Record of the IEEE Photovoltaic Specialists Conference | |||
11 | 2023 | A Kinetic Monte Carlo Simulation Study of WS<inf>2</inf>RRAM with Different 2D Layer Thickness | Chen, Ying Chuan; Chao, Yu Ting; Chen, Edward; CHAO-HSIN WU ; YUH-RENN WU | 2023 International VLSI Symposium on Technology, Systems and Applications, VLSI-TSA/VLSI-DAT 2023 - Proceedings | 0 | 0 | |
12 | 2023 | Efficient and Bright Organic Radical Light-Emitting Diodes with Low Efficiency Roll-Off | Cho, Hwan Hee; Gorgon, Sebastian; Hung, Hsiao Chun; Huang, Jun Yu; YUH-RENN WU ; Li, Feng; Greenham, Neil C.; Evans, Emrys W.; Friend, Richard H. | Advanced Materials | 1 | 0 | |
13 | 2023 | Numerical Analysis and Optimization of a Hybrid Layer Structure for Triplet-Triplet Fusion Mechanism in Organic Light-Emitting Diodes | Huang, JY; Hung, HC; Hsu, KC; Chen, CH; Lee, PH; Lin, Hung-Yi; Lin, BY; Leung, MK ; Chiu, TL; Lee, Jiun-Haw; Friend, RH; Wu, YR | ADVANCED THEORY AND SIMULATIONS | 0 | 0 | |
14 | 2022 | Influences of dielectric constant and scan rate on hysteresis effect in perovskite solar cell with simulation and experimental analyses | Huang, Jun Yu; Yang, You Wei; Hsu, Wei Hsuan; Chang, En Wen; Chen, Mei Hsin; YUH-RENN WU | Scientific Reports | 10 | 8 | |
15 | 2022 | Efficient vertical charge transport in polycrystalline halide perovskites revealed by four-dimensional tracking of charge carriers | Cho, Changsoon; Feldmann, Sascha; Yeom, Kyung Mun; Jang, Yeoun Woo; Kahmann, Simon; Huang, Jun Yu; Yang, Terry Chien‐Jen; Khayyat, Mohammed Nabaz Taher; YUH-RENN WU ; Choi, Mansoo; Noh, Jun Hong; Stranks, Samuel D.; Greenham, Neil C. | Nature Materials | 11 | 10 | |
16 | 2022 | Robust Anti-Ambipolar Behavior and Gate-Tunable Rectifying Effect in van der Waals p-n Junctions | Lv, Yanhui; Wu, Che Yu; Zhao, Yue; Wu, Gang; Abid, Mohamed; Cho, Jiung; Choi, Miri; Ó Coileaín, Cormac; Hung, Kuan Ming; CHING-RAY CHANG ; YUH-RENN WU ; Wu, Han Chun | ACS Applied Electronic Materials | 3 | 3 | |
17 | 2022 | Process improvement of p-GaN HEMTs with a u-GaN etching buffer layer inserted | Chang, Chih Yao; Shen, Yao Luen; Tang, Shun Wei; Wu, Tian Li; Kuo, Wei Hung; Lin, Suh Fang; YUH-RENN WU ; Huang, Chih Fang | Applied Physics Express | 0 | 0 | |
18 | 2022 | Analyzing the Bottleneck AlGaN-based UV-B Laser Diode With a 2D Electro-optical Numerical Model | Cheng, Yun Hsiu; Lin, Yu Tai; YUH-RENN WU | Conference Digest - IEEE International Semiconductor Laser Conference | 0 | 0 | |
19 | 2022 | Development of time-dependent Exciton diffusion solver for modeling Triplet-Triplet Fusion Mechanism in OLEDs | Huang, Jun Yu; Hung, Hsiao Chun; Hsu, Kung Chi; Chen, Chia Hsun; Lee, Pei Hsi; Lin, Hung Yi; Lin, Bo Yen; MAN-KIT LEUNG ; Chiu, Tien Lung; JIUN-HAW LEE ; YUH-RENN WU | Proceedings of the International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD | 0 | 0 | |
20 | 2022 | Design of AlInAs/GaAsSb/InGaAsSb Double Heterojunction Bipolar Transistors for The Unit Current Gain Cutoff Frequency of 850GHz | Liu, Yun Hao; Liao, Yu Tzu; JIAN-JANG HUANG ; YUH-RENN WU | 2022 Compound Semiconductor Week, CSW 2022 | 0 | 0 | |
21 | 2022 | Investigating the high field transport properties of Janus WSSe and MoSSe by DFT analysis and Monte Carlo simulations | Pai H.-C; YUH-RENN WU | Journal of Applied Physics | 3 | 2 | |
22 | 2022 | Study on the effect of size on InGaN red micro-LEDs | Horng R.-H; Ye C.-X; Chen P.-W; Iida D; Ohkawa K; Wu Y.-R; Wuu D.-S.; YUH-RENN WU | Scientific Reports | 32 | 28 | |
23 | 2022 | Electro-Optical Numerical Modeling for the Design of UVA Nitride-Based Vertical-Cavity Surface-Emitting Laser Diodes | Chuang C.-M; Cheng Y.-H; Wu Y.-R.; YUH-RENN WU | IEEE Journal of Selected Topics in Quantum Electronics | 0 | 0 | |
24 | 2022 | Study of Carrier Scattering and Mobility in Monolayer MoTe2and WTe2by First-Principle Analysis | Pai H.-C; YUH-RENN WU | 2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022 | 1 | 0 | |
25 | 2022 | Hole mobility behavior in Al-gradient polarization-induced p-type AlGaN grown on GaN template | CHIH-CHUNG YANG ; YUH-RENN WU | Applied Physics Letters | 4 | 4 | |
26 | 2022 | Vertical hole transport through unipolar InGaN quantum wells and double heterostructures | Qwah K.S; Monavarian M; Ho W.Y; YUH-RENN WU ; Speck J.S. | Physical Review Materials | 2 | 0 | |
27 | 2022 | Efficiency and Forward Voltage of Blue and Green Lateral LEDs with v -shaped Defects and Random Alloy Fluctuation in Quantum Wells | Ho C.-H; Speck J.S; Weisbuch C; Wu Y.-R.; YUH-RENN WU | Physical Review Applied | 12 | 11 | |
28 | 2022 | Design of Monolayer MoS2Nanosheet Transistors for Low-Power Applications | Chen P.-F; Chen E; Wu Y.-R.; YUH-RENN WU | IEEE Transactions on Electron Devices | 1 | 1 | |
29 | 2022 | Analysis of Light-Emission Polarization Ratio in Deep-Ultraviolet Light-Emitting Diodes by Considering Random Alloy Fluctuations with the 3D k·p Method | Shen H.-T; Chang Y.-C; Wu Y.-R.; YUH-RENN WU | Physica Status Solidi - Rapid Research Letters | 3 | 3 | |
30 | 2022 | Study of the Factors Limiting the Efficiency of Vertical-Type Nitride-and AlInGaP-Based Quantum-Well Micro-LEDs | Ho C.-H; Chen S.-M; YUH-RENN WU | Processes | 2 | 2 | |
31 | 2022 | Improved Vertical Carrier Transport for Green III-Nitride LEDs Using (In,Ga) N Alloy Quantum Barriers | Lynsky C; Lheureux G; Bonef B; Qwah K.S; White R.C; Denbaars S.P; Nakamura S; YUH-RENN WU ; Weisbuch C; Speck J.S. | Physical Review Applied | 7 | 7 | |
32 | 2021 | Wearable Devices Made of a Wireless Vertical-Type Light-Emitting Diode Package on a Flexible Polyimide Substrate with a Conductive Layer | Wu W.-Y; Hsu Y.-H; Chen Y.-F; Wu Y.-R; Liu H.-W; Tu T.-Y; Chao P.P.-C; Tan C.-S; Horng R.-H.; YUH-RENN WU | ACS Applied Electronic Materials | 6 | 6 | |
33 | 2021 | Three-Dimensional Modeling of Minority-Carrier Lateral Diffusion Length including Random Alloy Fluctuations in (In, Ga) N and (Al, Ga) N Single Quantum Wells | Shen H.-T; Weisbuch C; Speck J.S; Wu Y.-R.; YUH-RENN WU | Physical Review Applied | 12 | 10 | |
34 | 2021 | Influences of Random Alloy Fluctuation to the Efficiency of μlED and Optimization of Efficiency with Vertical Type Contact | Ho C.-H; Wu Y.-R.; YUH-RENN WU | Proceedings of the International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD | 0 | 0 | |
35 | 2021 | Graphene/SnS2van der Waals Photodetector with High Photoresponsivity and High Photodetectivity for Broadband 365-2240 nm Detection | Zhao Y; Tsai T.-Y; Wu G; ? Coile?in C; Zhao Y.-F; Zhang D; Hung K.-M; Chang C.-R; Wu Y.-R; Wu H.-C.; YUH-RENN WU | ACS Applied Materials and Interfaces | 17 | 17 | |
36 | 2021 | Disorder effects in nitride semiconductors: Impact on fundamental and device properties | Weisbuch C; Nakamura S; Wu Y.-R; Speck J.S.; YUH-RENN WU | Frontiers in Optics and Photonics | 1 | 0 | |
37 | 2021 | Modeling dislocation-related reverse bias leakage in GaN p-n diodes | Qwah K.S; Robertson C.A; Wu Y.-R; Speck J.S.; YUH-RENN WU | Semiconductor Science and Technology | 3 | 2 | |
38 | 2021 | Calculation of field dependent mobility in MoS2and WS2with multi-valley monte carlo method | Chen P.-F; Wu Y.-R.; YUH-RENN WU | VLSI-TSA 2021 - 2021 International Symposium on VLSI Technology, Systems and Applications, Proceedings | 3 | 0 | |
39 | 2021 | Investigation of Electrical and Optical Properties of AlGaInP Red Vertical Micro-Light-Emitting Diodes with Cu/Invar/Cu Metal Substrates | Sinha S; Tarntair F.-G; Ho C.-H; Wu Y.-R; Horng R.-H.; YUH-RENN WU | IEEE Transactions on Electron Devices | 7 | 7 | |
40 | 2021 | Deep Source Metal Trenches in GaN-On-Si HEMTs for Relieving Current Collapse | Yang J.-X; Lin D.-J; Wu Y.-R; YUH-RENN WU ; JIAN-JANG HUANG | IEEE Journal of the Electron Devices Society | 3 | 3 | |
41 | 2021 | Giant gauge factor of Van der Waals material based strain sensors | Yan W; YUH-RENN WU et al. | Nature Communications | 60 | 50 | |
42 | 2020 | Analysis of the hysteresis effect in Perovskite solar cells for the traditional and inverted architectures | Chang E.-W; Huang J.-Y; Wu Y.-R.; YUH-RENN WU | Conference Record of the IEEE Photovoltaic Specialists Conference | 1 | 0 | |
43 | 2020 | The 2020 UV emitter roadmap | Amano, H.; Collazo, R.; De Santi, C.; Einfeldt, S.; Funato, M.; Glaab, J.; Hagedorn, S.; Hirano, A.; Hirayama, H.; Ishii, R.; Kashima, Y.; Kawakami, Y.; Kirste, R.; Kneissl, M.; Martin, R.; Mehnke, F.; Meneghini, M.; Ougazzaden, A.; Parbrook, P.J.; Rajan, S.; Reddy, P.; R?mer, F.; Ruschel, J.; Sarkar, B.; Scholz, F.; Schowalter, L.J.; Shields, P.; Sitar, Z.; Sulmoni, L.; Wang, T.; Wernicke, T.; Weyers, M.; Witzigmann, B.; Wu, Y.-R.; Wunderer, T.; Zhang, Y.; YUH-RENN WU | Journal of Physics D: Applied Physics | 267 | 239 | |
44 | 2020 | Overcoming the excessive compressive strain in AlGaN epitaxy by introducing high Si-doping in AlN templates | Huang, C.-Y.; Walde, S.; Tsai, C.-L.; Netzel, C.; Liu, H.-H.; Hagedorn, S.; Wu, Y.-R.; Fu, Y.-K.; Weyers, M.; YUH-RENN WU | Japanese Journal of Applied Physics | 14 | 14 | |
45 | 2020 | Dependence of carrier escape lifetimes on quantum barrier thickness in InGaN/GaN multiple quantum well photodetectors | Chow, Y.C.; Lee, C.; Wong, M.S.; Wu, Y.-R.; Nakamura, S.; Denbaars, S.P.; Bowers, J.E.; Speck, J.S.; YUH-RENN WU | Optics Express | 9 | 10 | |
46 | 2020 | Low-temperature carrier transport across InGaN multiple quantum wells: Evidence of ballistic hole transport | Marcinkevi?ius, S.; Yapparov, R.; Kuritzky, L.Y.; Wu, Y.-R.; Nakamura, S.; Speck, J.S.; YUH-RENN WU | Physical Review B | 4 | 6 | |
47 | 2020 | Barriers to carrier transport in multiple quantum well nitride-based c -plane green light emitting diodes | Lynsky, C.; Alhassan, A.I.; Lheureux, G.; Bonef, B.; Denbaars, S.P.; Nakamura, S.; Wu, Y.-R.; Weisbuch, C.; Speck, J.S.; YUH-RENN WU | Physical Review Materials | 18 | 15 | |
48 | 2020 | Application of localization landscape theory and the k · p model for direct modeling of carrier transport in a type II superlattice InAs/InAsSb photoconductor system | Tsai, T.-Y.; Michalczewski, K.; Martyniuk, P.; Wu, C.-H.; YUH-RENN WU ; CHAO-HSIN WU | Journal of Applied Physics | 16 | 15 | |
49 | 2020 | Studies of 2D Bulk and Nanoribbon Band Structures in Mo<inf>x</inf>W<inf>1–x</inf>S<inf>2</inf> Alloy System Using Full sp<sup>3</sup>d<sup>5</sup> Tight-Binding Model | Tsai, T.-Y.; Chen, P.-F.; Chang, S.-W.; Wu, Y.-R.; YUH-RENN WU | Physica Status Solidi (B) Basic Research | 1 | 1 | |
50 | 2020 | Theoretical and experimental investigations of vertical hole transport through unipolar AlGaN structures: Impacts of random alloy disorder | Qwah, K.S.; Monavarian, M.; Lheureux, G.; Wang, J.; Wu, Y.-R.; Speck, J.S.; YUH-RENN WU | Applied Physics Letters | 12 | 12 | |
51 | 2020 | Revealing the mechanism of carrier transport in host-guest systems of organic materials with a modified Poisson and drift-diffusion solver | Huang J.-Y; Lee J.-H; Wu Y.-R; Chen T.-Y; Chiu Y.-C; Huang J.-J; Leung M.-K; MAN-KIT LEUNG ; JIUN-HAW LEE ; YUH-RENN WU | Physical Review Materials | 4 | 3 | |
52 | 2020 | Analysis of the triplet exciton transfer mechanism at the heterojunctions of organic light-emitting diodes | Huang, J.-Y.; Wang, M.-T.; Chen, G.-Y.; Li, J.-Y.; Chen, S.-P.; Lee, J.-H.; Chiu, T.-L.; Wu, Y.-R.; YUH-RENN WU ; JIUN-HAW LEE | Journal of Physics D: Applied Physics | 5 | 4 | |
53 | 2020 | AlGaN-based deep ultraviolet light emitting diodes with magnesium delta-doped AlGaN last barrier | Wang T.-Y; Lai W.-C; Sie S.-Y; Chang S.-P; Wu Y.-R; Chiou Y.-Z; Kuo C.-H; Sheu J.-K.; YUH-RENN WU | Applied Physics Letters | 14 | 15 | |
54 | 2020 | Bistriazoles with a Biphenyl Core Derivative as an Electron-Favorable Bipolar Host of Efficient Blue Phosphorescent Organic Light-Emitting Diodes | JIUN-HAW LEE ; Chen, C.-H.; Lin, B.-Y.; Lan, Y.-H.; Huang, Y.-M.; Chen, N.-J.; Huang, J.-J.; Volyniuk, D.; Keruckiene, R.; Grazulevicius, J.V.; YUH-RENN WU ; MAN-KIT LEUNG ; Chiu T.-L. | ACS Applied Materials and Interfaces | 10 | 10 | |
55 | 2020 | Analysis and Optimization of GaN Based Multi-Channels FinFETs | Yu, C.-L.; Lin, C.-H.; Wu, Y.-R.; YUH-RENN WU | IEEE Transactions on Nanotechnology | 7 | 6 | |
56 | 2020 | Light Trapping Induced High Short-Circuit Current Density in III-Nitride Nanorods/Si (111) Heterojunction Solar Cells | Chang, C.-W.; Wadekar, P.V.; Huang, H.-C.; Chen, Q.Y.-S.; Wu, Y.-R.; Chen, R.T.; Tu, L.-W.; YUH-RENN WU | Nanoscale Research Letters | 4 | 4 | |
57 | 2020 | Theoretical modeling of XBn T2SLs InAs/InAsSb/B-AlSb longwave infrared detector operating under thermoelectrical cooling | Martyniuk, P.; Michalczewski, K.; Tsai, T.Y.; CHAO-HSIN WU ; YUH-RENN WU | Optical and Quantum Electronics | 2 | 2 | |
58 | 2020 | Disorder effects in nitride semiconductors: Impact on fundamental and device properties | Weisbuch C; Nakamura S; Wu Y.-R; Speck J.S.; YUH-RENN WU | Nanophotonics | 20 | 18 | |
59 | 2020 | A 3D simulation comparison of carrier transport in green and blue c-plane multi-quantum well nitride light emitting diodes | Lheureux G; Lynsky C; YUH-RENN WU ; Speck J.S; Weisbuch C. | Journal of Applied Physics | 8 | ||
60 | 2020 | Characterization of semi-polar (20 2 ¯ 1) InGaN microLEDs | Horng, R.-H.; Sinha, S.; Wu, Y.-R.; Tarntair, F.-G.; Han, J.; Wuu, D.-S.; YUH-RENN WU | Scientific Reports | 7 | 6 | |
61 | 2019 | Investigation of Electronic Properties of Mo<inf>x</inf>W<inf>1-x</inf>S<inf>2</inf> Alloy by Tight-binding Method for Interband transition | Tsai, T.-Y.; Chen, P.-F.; Chang, S.-W.; Wu, Y.-R.; YUH-RENN WU | Proceedings of the International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD | 0 | 0 | |
62 | 2019 | Modeling dislocation-related leakage currents in GaN p-n diodes | Robertson, C.A.; Qwah, K.S.; Wu, Y.-R.; Speck, J.S.; YUH-RENN WU | Journal of Applied Physics | 6 | 6 | |
63 | 2019 | Optimization of MAPbI<inf>3</inf>-Based Perovskite Solar Cell with Textured Surface | Huang, J.-Y.; Chang, E.-W.; Wu, Y.-R.; YUH-RENN WU | IEEE Journal of Photovoltaics | 6 | 6 | |
64 | 2019 | Theoretical simulation of the barrier T2SLs InAs/InAsSb/B-AlSb longwave detector operating under thermoelectrical cooling | Martyniuk, P.; Michalczewski, K.; Tsai, T.-Y.; Wu, C.H.; CHAO-HSIN WU ; YUH-RENN WU | Proceedings of the International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD | 0 | 0 | |
65 | 2019 | Theoretical modelling of XBn T2SLs InAs/InAsSb/B-AlAsSb mid-wave detector operating below thermoelectrical cooling | Martyniuk, P.; Michalczewski, K.; Tsai, T.Y.; Wu, C.H.; CHAO-HSIN WU ; YUH-RENN WU | Opto-electronics Review | 1 | 1 | |
66 | 2019 | 3D Self-Consistent Quantum Transport Simulation for GaAs Gate-All-Around Nanowire Field-Effect Transistor with Elastic and Inelastic Scattering Effects | Hsiao, H.-W.; Wu, Y.-R.; YUH-RENN WU | Physica Status Solidi (A) Applications and Materials Science | 4 | 4 | |
67 | 2019 | Interwell carrier transport in InGaN/(In) GaN multiple quantum wells | Saulius Marcinkevi?ius; Rinat Yapparov; Leah Y Kuritzky; Yuh-Renn Wu; Shuji Nakamura; Steven P DenBaars; James S Speck; YUH-RENN WU | Applied Physics Letters | 20 | 18 | |
68 | 2019 | Thermoelectrically Cooled nBn T2SLs InAs/InAsSb/B-AlAsSb MWIR Detector | Martyniuk, P.; Michalczewski, K.; Tsai, T.Y.; Wu, C.-H.; CHAO-HSIN WU ; YUH-RENN WU | 2019 Compound Semiconductor Week, CSW 2019 - Proceedings | 0 | 0 | |
69 | 2019 | Hybrid classical-quantum linear solver using Noisy Intermediate-Scale Quantum machines | Chen, C.-C.; Shiau, S.-Y.; Wu, M.-F.; Wu, Y.-R.; YUH-RENN WU | Scientific Reports | 18 | 13 | |
70 | 2018 | Theoretical modeling of XBn T2SLs InAs/InAsSb/B-AlAsSb mid-wave detector operating below thermoelectrical cooling | Martyniuk, P.; Michalczewski, K.; Tsai, T.Y.; Wu, C.H.; CHAO-HSIN WU ; YUH-RENN WU | Proceedings of the International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD | 0 | 0 | |
71 | 2018 | Evidence of nanoscale Anderson localization induced by intrinsic compositional disorder in InGaN/GaN quantum wells by scanning tunneling luminescence spectroscopy | W. Hahn; J-M Lentali; P Polovodov; N Young; S Nakamura; JS Speck; C Weisbuch; M Filoche; Y-R Wu; M Piccardo; F Maroun; L Martinelli; Y Lassailly; J Peretti; YUH-RENN WU | Physical Review B | 27 | 27 | |
72 | 2018 | Different surface plasmon coupling behaviors of a surface Al nanoparticle between TE and TM polarizations in a deep-UV light-emitting diode | Wen-Yen Chang; Yang Kuo; Yu-Feng Yao; C. C. Yang; Yuh-Renn Wu; Yean-Woei Kiang; YUH-RENN WU ; CHIH-CHUNG YANG | Optics Express | 10 | 9 | |
73 | 2018 | Optimization of MAPbI 3 perovskite solar cell with nano structures | Hsieh Y.-C; Huang J.-Y; Wu Y.-R.; YUH-RENN WU | Proceedings of the International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD | 0 | 0 | |
74 | 2018 | Mode-Hopping Phenomena in the InGaN-Based Core�VShell Nanorod Array Collective Lasing | Chia-Yen Huang; Tzu-Ying Tai; Jing-Jie Lin; Tsu-Chi Chang; Che-Yu Liu; Tien-Chang Lu; Yuh-Renn Wu; Hao-Chung Kuo; YUH-RENN WU | ACS Photonics | 3 | 3 | |
75 | 2018 | Three dimensional simulation on the transport and quantum efficiency of UVC-LEDs with random alloy fluctuations | Hung-Hsiang Chen; James S Speck; Claude Weisbuch; Yuh-Renn Wu*; YUH-RENN WU | Applied Physics Letters | 26 | 26 | |
76 | 2017 | Electronic properties of MoS2 nanoribbon with strain using tight-binding method | Chen S.-F; Wu Y.-R.; YUH-RENN WU | Physica Status Solidi (B) Basic Research | 11 | 11 | |
77 | 2017 | Electronic Properties of MoS2 Nanoribbon under Strain Using Tight Binding Method | Shuo-Fan Chen; Yuh-Renn Wu; YUH-RENN WU | Physica Status Solidi B: Basic Solid State Physics | |||
78 | 2017 | Suppression of Current Collapse in Enhancement Mode GaN-Based HEMTs Using an AlGaN/GaN/AlGaN Double Heterostructure | Shin-Yi Ho; Chun-Hsun Lee; An-Jye Tzou; Hao-Chung Kuo; Yuh-Renn Wu; JianJang Huang; YUH-RENN WU | IEEE Transactions on Electron Devices | 23 | 22 | |
79 | 2017 | Localization landscape theory of disorder in semiconductors III: Application to transport and radiative recombination in light emitting diodes. | Chi-Kang Li; Marco Piccardo; Li-Shuo Lu; Svitlana Mayboroda; Lucio Martinelli; Claude Weisbuch; Marcel Filoche; Yuh-Renn Wu; YUH-RENN WU | Physical Review B | |||
80 | 2017 | Modeling of carrier transport in organic light emitting diode with random dopant effects by two-dimensional simulation | Te-Jen Kung; Jun-Yu Huang; Jau-Jiun Huang; Snow H. Tseng; Man-Kit Leung; Tien-Lung Chiu; Jiun-Haw Lee; Yuh-Renn Wu*; YUH-RENN WU | Optics Express | 6 | 6 | |
81 | 2017 | A design of intermediate band solar cell for photon ratchet with multi-layer MoS2 nanoribbons | Shuo-Fan Chen; Yuh-Renn Wu; YUH-RENN WU | Applied Physics Letters | 11 | 10 | |
82 | 2017 | Modeling of carrier transport and exciton diffusion in organic light emitting diodes with different doping effects | Huang J.-Y; Kung T.-J; Wu Y.-R.; YUH-RENN WU | Proceedings of the International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD | 0 | 0 | |
83 | 2017 | Transferring the Bendable Substrateless GaN LED Grown on Thin C-rich SiC Buffer Layer to Flexible Dielectric and Metallic Plates | Chih-Hsien Cheng et al.; Tzu-Wei Huang; Chung-Lun Wu; Mu Ku Chen; Cheng Hung Chu; YUH-RENN WU ; Min-Hsiung Shih; Chao-Kuei Lee; Hao-Chung Kuo; Din-Ping Tsai; GONG-RU LIN | Journal of Materials Chemistry C | 27 | 26 | |
84 | 2017 | Localization landscape theory of disorder in semiconductors II: Urbach tails of disordered quantum well layers | Marco Piccardo; Chi-Kang Li; Yuh-Renn Wu; James S. Speck; Bastien Bonef; Bob Farrell; Marcel Filoche; Lucio Martinelli; Jacques Peretti; Claude Weisbuch; YUH-RENN WU | Physical Review B | 71 | 66 | |
85 | 2017 | Localization landscape theory of disorder in semiconductors I: Theory and modeling | Marcel Filoche; Marco Piccardo; Yuh-Renn Wu; Chi-Kang Li; Claude Weisbuch; Svitlana Mayboroda; YUH-RENN WU | Physical Review B | 76 | 67 | |
86 | 2017 | Localization landscape theory of disorder in semiconductors. III. Application to carrier transport and recombination in light emitting diodes | Li C.-K; Piccardo M; Lu L.-S; Mayboroda S; Martinelli L; Peretti J; Speck J.S; Weisbuch C; Filoche M; Wu Y.-R.; YUH-RENN WU | Physical Review B | 94 | 76 | |
87 | 2016 | 3D numerical modeling of the carrier transport and radiative efficiency for InGaN/GaN light emitting diodes with V-shaped pits | Li C.-K; Wu C.-K; Hsu C.-C; Lu L.-S; Li H; Lu T.-C; YUH-RENN WU | AIP Advances | 38 | 40 | |
88 | 2016 | Optimization of thermoelectric properties for rough nano-ridge GaAs/AlAs superlattice structure | Chao-Wei Wu; Yuh-Renn Wu; YUH-RENN WU | AIP Advances | 11 | 10 | |
89 | 2015 | High optical power and low-efficiency droop blue light-emitting diodes using compositionally step-graded InGaN barrier | Pan, Chih-Chien; Yan, Qimin; Fu, Houqiang; Zhao, Yuji; Wu, Yuh-Renn; Van de Walle, Chris; Nakamura, Shuji; DenBaars, Steven P.; YUH-RENN WU | Electronics Letters | 21 | 19 | |
90 | 2015 | Electron transport in unipolar InGaN/GaN multiple quantum well structures grown by NH3 molecular beam epitaxy | Browne, David A.; Mazumder, Baishakhi; Wu, Yuh-Renn; Speck, James S.; YUH-RENN WU | Journal of Applied Physics | 47 | 38 | |
91 | 2015 | Percolation transport study in nitride based LED by considering the random alloy fluctuation | Wu, Chen-Kuo; Li, Chi-Kang; Wu, Yuh-Renn; YUH-RENN WU | Journal of Computational Electronics | 26 | 21 | |
92 | 2015 | Impact of Gate Metal on the Performance of p-GaN/AlGaN/GaN High Electron Mobility Transistors | Lee, Finella; Su, Liang-Yu; Wang, Chih-Hao; Wu, Yuh-Renn; Huang, Jianjang; JIAN-JANG HUANG ; YUH-RENN WU | IEEE Electron Device Letters | 102 | 93 | |
93 | 2015 | The effect of tensile strain on optical anisotropy and exciton of m-plane ZnO | Wang H.H; Tian J.S; Chen C.Y; Huang H.H; Yeh Y.C; Deng P.Y; Chang L; Chu Y.H; YUH-RENN WU ; He J.H. | IEEE Photonics Journal | 2 | 4 | |
94 | 2014 | Atomic-scale nanofacet structure in semipolar (20(2)over-bar1) and (20(2)over-bar1) InGaN single quantum wells | Zhao, Yuji; Wu, Feng; Yang, Tsung-Jui; Wu, Yuh-Renn; Nakamura, Shuji; Speck, James S.; YUH-RENN WU | Applied Physics Express | 15 | 16 | |
95 | 2014 | Photoelectrochemical hydrogen generation with linear gradient Al composition dodecagon faceted AlGaN/n-GaN electrode | Lai, W. C.; Ma, M. H.; Lin, B. K.; Hsieh, B. H.; Wu, Y. R.; Sheu, J. K.; YUH-RENN WU | Optics Express | 4 | 4 | |
96 | 2014 | The influence of random indium alloy fluctuations in indium gallium nitride quantum wells on the device behavior | Yang, Tsung-Jui; Shivaraman, Ravi; Speck, James S.; Wu, Yuh-Renn; YUH-RENN WU | Journal of Applied Physics | 128 | 120 | |
97 | 2014 | Mechanisms of the Asymmetric Light Output Enhancements in a-Plane GaN Light-Emitting Diodes With Photonic Crystals | Li, Hsiang-Wei; Yin, Yu-Feng; Chang, Chen-Yu; Tsai, Chen-Hung; Hsu, Yen-Hsiang; Lin, Da-Wei; Wu, Yuh-Renn; Kuo, Hao-Chung; Huang, Jian Jang; YUH-RENN WU | IEEE Journal of Quantum Electronics | 0 | 0 | |
98 | 2014 | Valence band states and polarized optical emission from nonpolar and semipolar III-nitride quantum well optoelectronic devices | Zhao, Yuji; Farrell, Robert M.; YUH-RENN WU ; Speck, James S. | Japanese Journal of Applied Physics | 38 | 31 | |
99 | 2014 | Study of random telegraph noise in UTBOX Silicon-on-Insulator nMOSFETs | Li C.K; Fang W; Simoen E; Aoulaiche M; YUH-RENN WU ; Luo J; Zhao C; Claeys C. | ECS Transactions | 4 | 0 | |
100 | 2014 | Polarization ratio enhancement of a-plane GaN light emitting diodes by asymmetric two-dimensional photonic crystals | Chou, Y.; Li, H.-W.; Yin, Y.-F.; Wang, Y.-T.; Lin, Y.-C.; Lin, D.-W.; Wu, Y.-R.; Kuo, H.-C.; YUH-RENN WU ; JIAN-JANG HUANG | Journal of Applied Physics | 9 | 10 | |
101 | 2014 | Study on the Optimization for Current Spreading Effect of Lateral GaN/InGaN LEDs | Li, Chi-Kang; Rosmeulen, Maarten; Simoen, Eddy; Wu, Yuh-Renn; YUH-RENN WU | IEEE Transactions on Electron Devices | 19 | 23 | |
102 | 2014 | The optimization study of textured a-Si:H solar cells | Lee, Chun-Yao; Yeh, Chun-Ming; Liu, Yung-Tsung; Fan, Chia-Ming; Huang, Chien-Fu; Wu, Yuh-Renn; YUH-RENN WU | Journal of Renewable and Sustainable Energy | 10 | 10 | |
103 | 2014 | Characteristics of large-scale nanohole arrays for thin-silicon photovoltaics | Chen, Ting-Gang; Yu, Peichen; Chen, Shih-Wei; Chang, Feng-Yu; Huang, Bo-Yu; Cheng, Yu-Chih; Hsiao, Jui-Chung; Li, Chi-Kang; Wu, Yuh-Renn; YUH-RENN WU | Progress in Photovoltaics | 59 | 51 | |
104 | 2014 | Design of anti-ring back reflectors for thin-film solar cells based on three-dimensional optical and electrical modeling | Hsiao H.-H.; Chang H.-C.; HUNG-CHUN CHANG ; YUH-RENN WU ; HUI-HSIN HSIAO | Applied Physics Letters | 6 | 8 | |
105 | 2014 | Thermal effects in a bendable InGaN/GaN quantum-well light-emitting diode | Chen, H.-S.; Lin, C.-H.; Shih, P.-Y.; Hsieh, C.; Su, C.-Y.; Wu, Y.-R.; Kiang, Y.-W.; CHIH-CHUNG YANG ; YUH-RENN WU ; YEAN-WOEI KIANG | IEEE Photonics Technology Letters | 2 | 2 | |
106 | 2014 | High-electron-mobility GaN grown on free-standing GaN templates by ammonia-based molecular beam epitaxy | Kyle, Erin C. H.; Kaun, Stephen W.; Burke, Peter G.; Wu, Feng; Wu, Yuh-Renn; Speck, James S.; YUH-RENN WU | Journal of Applied Physics | 93 | 90 | |
107 | 2014 | Efficiency dip observed with InGaN-based multiple quantum well solar cells | Lai, K. Y.; Lin, G. J.; Wu, Yuh-Renn; Tsai, Meng-Lun; He, Jr-Hau; YUH-RENN WU | Optics Express | 6 | 7 | |
108 | 2014 | Thermoelectric characteristic of the rough InN/GaN core-shell nanowires | Wu, Chao-Wei; Wu, Yuh-Renn; YUH-RENN WU | Journal of Applied Physics | 11 | 10 | |
109 | 2013 | Unipolar vertical transport in GaN/AlGaN/GaN heterostructures | Nath, D. N.; Yang, Z. C.; Lee, C. Y.; Park, P. S.; Wu, Y. R.; Rajan, S.; YUH-RENN WU | Applied Physics Letters | 51 | 49 | |
110 | 2013 | Surface-plasmon-coupled emission enhancement of a quantum well with a metal nanoparticle embedded in a light-emitting diode | Kuo, Yang; Chang, Wen-Yen; Chen, Horng-Shyang; Wu, Yuh-Renn; Yang, C. C.; Kiang, Yean-Woei; CHIH-CHUNG YANG ; YEAN-WOEI KIANG ; YUH-RENN WU | Journal of the Optical Society of America B-Optical Physics | 26 | 24 | |
111 | 2013 | Three dimensional numerical study on the efficiency of a core-shell InGaN/GaN multiple quantum well nanowire light-emitting diodes | Li, Chi-Kang; Yang, Hung-Chih; Hsu, Ta-Cheng; Shen, Yu-Jiun; Liu, Ai-Sen; Wu, Yuh-Renn; YUH-RENN WU | Journal of Applied Physics | 28 | 26 | |
112 | 2013 | Scaling performance of Ga2O3/GaN nanowire field effect transistor | Li, Chi-Kang; Yeh, Po-Chun; Yu, Jeng-Wei; LUNG-HAN PENG ; YUH-RENN WU | Journal of Applied Physics | 10 | 9 | |
113 | 2013 | Projected Efficiency of Polarization-Matched p-InxGa1-xN/i-InyGa1-yN/n-GaN Double Heterojunction Solar Cells | Wang, Hsun-Wen; Yu, Peichen; Wu, Yuh-Renn; Kuo, Hao-Chung; Chang, Edward Yi; Lin, Shiuan-Huei; YUH-RENN WU | IEEE Journal of Photovoltaics | 7 | 10 | |
114 | 2013 | Enhancement of efficiency of InGaN-based light emitting diodes through strain and piezoelectric field management | Pal, J.; Migliorato, M. A.; Li, C. K.; Wu, Y. R.; Crutchley, B. G.; Marko, I. P.; Sweeney, S. J.; YUH-RENN WU | Journal of Applied Physics | 19 | 17 | |
115 | 2013 | GaN-Based Dual-Color LEDs With p-Type Insertion Layer for Controlling the Ratio of Two-Color Intensities | Chi, Kai-Lun; Yeh, Shu-Ting; Yeh, Yu-Hsiang; Lin, Kun-Yan; Shi, Jin-Wei; Wu, Yuh-Renn; Lee, Ming Lun; Sheu, Jinn-Kong; YUH-RENN WU | IEEE Transactions on Electron Devices | 6 | 6 | |
116 | 2013 | On the efficiency decrease of the gan light-emitting nanorod arrays | Chen, L.-Y.; Li, C.-K.; Tan, J.-Y.; Huang, L.-C.; Wu, Y.-R.; YUH-RENN WU ; JIAN-JANG HUANG | IEEE Journal of Quantum Electronics | 11 | 12 | |
117 | 2013 | Semipolar (20(2)over-bar1) Single-Quantum-Well Red Light-Emitting Diodes with a Low Forward Voltage | Kawaguchi, Yoshinobu; Huang, Chia-Yen; Wu, Yuh-Renn; Zhao, Yuji; DenBaars, Steven P.; Nakamura, Shuji; YUH-RENN WU | Japanese Journal of Applied Physics | 18 | 26 | |
118 | 2013 | The operation principle of the well in quantum dot stack infrared photodetector | Lee, J.-H.; Wu, Z.-M.; Liao, Y.-M.; Wu, Y.-R.; Lin, S.-Y.; Lee, S.-C.; SI-CHEN LEE ; YUH-RENN WU | Journal of Applied Physics | 3 | 4 | |
119 | 2013 | Studying the short channel effect in the scaling of the AlGaN/GaN nanowire transistors | Chen, Chin-Yi; Wu, Yuh-Renn; YUH-RENN WU | Journal of Applied Physics | 20 | 17 | |
120 | 2012 | Short channel effects on gallium nitride/gallium oxide nanowire transistors | Yu, J.-W.; Yeh, P.-C.; Wang, S.-L.; Wu, Y.-R.; Mao, M.-H.; Lin, H.-H.; Peng, L.-H.; MING-HUA MAO ; HAO-HSIUNG LIN ; LUNG-HAN PENG ; YUH-RENN WU | Applied Physics Letters | 20 | 19 | |
121 | 2012 | Study on the Current Spreading Effect and Light Extraction Enhancement of Vertical GaN/InGaN LEDs | Li, Chi-Kang; Wu, Yuh-Renn; YUH-RENN WU | IEEE Transactions on Electron Devices | 113 | 106 | |
122 | 2012 | Carrier escape mechanism dependence on barrier thickness and temperature in InGaN quantum well solar cells | Lang, J. R.; Young, N. G.; Farrell, R. M.; Wu, Y. -R.; Speck, J. S.; YUH-RENN WU | Applied Physics Letters | 75 | 65 | |
123 | 2012 | Thin 3D Multiplication Regions in Plasmonically Enhanced Nanopillar Avalanche Detectors | Senanayake, Pradeep; Hung, Chung-Hong; Farrell, Alan; Ramirez, David A.; Shapiro, Joshua; Li, Chi-Kang; Wu, Yuh-Renn; Hayat, Majeed M.; Huffaker, Diana L.; YUH-RENN WU | Nano Letters | 40 | 37 | |
124 | 2012 | Performance and polarization effects in (11(2)over-bar2) long wavelength light emitting diodes grown on stress relaxed InGaN buffer layers | Koslow, Ingrid L.; YUH-RENN WUet al. | Applied Physics Letters | 54 | 50 | |
125 | 2012 | Study of optical anisotropy in nonpolar and semipolar AlGaN quantum well deep ultraviolet light emission diode | Wang, Chang-Pei; Wu, Yuh-Renn; YUH-RENN WU | Journal of Applied Physics | 25 | 25 | |
126 | 2012 | Vertical Transport through AlGaN Barriers in Heterostructures Grown by Ammonia Molecular Beam Epitaxy and Metalorganic Chemical Vapor Deposition | David Browne; Micha Fireman; Baishakhi Mazumder; Leah Kuritzky; Yuh-Renn Wu; James Speck; YUH-RENN WU ; �d�|�� | Semiconductor Science and Technology | 9 | 9 | |
127 | 2012 | Influence of polarity on carrier transport in semipolar (20(21)over-bar) and (20(2)over-bar1) multiple-quantum-well light-emitting diodes | Kawaguchi, Yoshinobu; YUH-RENN WUet al. | Applied Physics Letters | 55 | 17 | |
128 | 2012 | Analyzing the physical properties of InGaN multiple quantum well light emitting diodes from nano scale structure | Wu, Yuh-Renn; Shivaraman, Ravi; Wang, Kuang-Chung; Speck, James S.; YUH-RENN WU | Applied Physics Letters | 105 | 94 | |
129 | 2011 | Investigation of the strain induced optical transition energy shift of the GaN nanorod light emitting diode arrays | Liang-Yi Chen; Hung-Hsun Huang; Chun-Hsiang Chang; Ying-Yuan Huang; Yuh-Renn Wu; JianJang Huang; JIAN-JANG HUANG ; YUH-RENN WU | Optics Express | 10 | 12 | |
130 | 2011 | Optical Properties of the Partially Strain Relaxed InGaN/GaN Light-Emitting Diodes Induced by p-Type GaN Surface Texturing | Yu-Hsuan Sun; JIAN-JANG HUANG ; YUH-RENN WUet al. | IEEE Electron Device Letters | 21 | 21 | |
131 | 2011 | Electrical properties of modulation-doped rf-sputtered polycrystalline MgZnO/ZnO heterostructures | Chin, H-A; Cheng, I-C; Li, C-K; Wu, Y-R; Chen, J. Z.; Lu, W-S; Lee, W-L; I-CHUN CHENG ; JIAN-ZHANG CHEN ; YUH-RENN WU | Journal of Physics D-Applied Physics | 31 | 28 | |
132 | 2011 | Study of carrier dynamics and radiative efficiency in InGaN/GaN LEDs with Monte Carlo method | Lu I.-L; YUH-RENN WU ; Singh J. | Physica Status Solidi (C) Current Topics in Solid State Physics | 9 | 0 | |
133 | 2011 | Transport properties of gallium nitride nanowire metal-oxide-semiconductor transistor | Yu, J. W.; Li, C. K.; Chen, C. Y.; Wu, Y. R.; Chou, L. J.; Peng, L. H.; YUH-RENN WU | Applied Physics Letters | 0 | 0 | |
134 | 2011 | Study of thermoelectric properties of indium nitride nanowire | Huang, Hung-Hsun; Lu, I. Lin; Wu, Yuh-Renn; YUH-RENN WU | Physica Status Solidi a-Applications and Materials Science | 12 | 11 | |
135 | 2011 | Study of thermoelectric properties of InGaN/GaN superlattice | Huang H.-H; YUH-RENN WU | Materials Research Society Symposium Proceedings | 0 | 0 | |
136 | 2010 | Mobility Enhancement of Polycrystalline MgZnO/ZnO Thin Film Layer with Modulation Doping and Polarization Effect | Huang, Chih-I; Chin, Huai-An; Wu, Yuh-Renn ; Cheng, I-Chun ; JIAN-ZHANG CHEN ; Chiu, Kuo-Chuang; Lin, Tzer-Shen | IEEE Transactions on Electron Devices | 44 | 40 | |
137 | 2010 | Study of Light Emission Enhancement in Nanostructured InGaN/GaN Quantum Wells | Chang, Cheng-Yu; Wu, Yuh-Renn | IEEE Journal of Quantum Electronics | 7 | 7 | |
138 | 2010 | Optical polarization anisotropy of tensile strained InGaN/AlInN quantum wells for TM mode lasers | Dang, Po-Yuan; Wu, Yuh-Renn; YUH-RENN WU | Journal of Applied Physics | 0 | 0 | |
139 | 2010 | Influences of polarization effects in the electrical properties of polycrystalline MgZnO/ZnO heterostructure | Chin H.-A.; Huang C.-I.; YUH-RENN WU ; Cheng -C.; Chiu K.-C.; Lin T.-S.; JIAN-ZHANG CHEN | Materials Research Society Symposium | 0 | ||
140 | 2010 | Abnormal polarization switching phenomenon in a-plane Al(x)Ga(1-x)N | Huang, Huei-Min; Huang, Hung-Hsun; Wu, Yuh-Renn; Lu, Tien-Chang; YUH-RENN WU | Optics Express | 4 | 3 | |
141 | 2010 | Strain-enhanced photoluminescence from Ge direct transition | Cheng, T.-H.; Peng, K.-L.; Ko, C.-Y.; Chen, C.-Y.; Lan, H.-S.; YUH-RENN WU ; CHEE-WEE LIU ; Tseng, H.-H. | Applied Physics Letters | 81 | 70 | |
142 | 2010 | A study of the role of dislocation density, indium composition on the radiative efficiency in InGaN/GaN polar and nonpolar light-emitting diodes using drift-diffusion coupled with a Monte Carlo method | Lu, I. Lin; Wu, Yuh-Renn; Singh, Jasprit; YUH-RENN WU | Journal of Applied Physics | 0 | 0 | |
143 | 2010 | Light Emission Polarization Properties of Semipolar InGaN/GaN Quantum Well | Huang, Hung-Hsun; Wu, Yuh-Renn | Journal of Applied Physics | 37 | 34 | |
144 | 2010 | Light emission polarization properties of strained (1122) semipolar InGaN quantum well | Huang H.-H; YUH-RENN WU | Physica Status Solidi (C) Current Topics in Solid State Physics | 0 | 0 | |
145 | 2010 | Two dimensional electron gases in polycrystalline MgZnO/ZnO heterostructures grown by rf-sputtering process | Chin, H.-A.; Cheng, I.-C.; Huang, C.-I.; Wu, Y.-R.; Lu, W.-S.; Lee, W.-L.; Chen, J.Z.; Chiu, K.-C.; Lin, T.-S.; Chin, Huai-An; I-CHUN CHENG ; JIAN-ZHANG CHEN ; Wu, Yuh-Renn | Journal of Applied Physics | 73 | 70 | |
146 | 2009 | Influences of polarization effects in the electrical properties of polycrystalline MgZnO/ZnO heterostructure | Chin, Huai-An; Huang, Chih-I; Wu, Yuh-Renn ; Cheng, I-Chun ; Chen, Jian Z.; Chiu, Kuo-Chuang; Lin, Tzer-Shen | MRS | 0 | 0 | |
147 | 2009 | Polarization-Dependent Sidewall Light Diffraction of LEDs Surrounded by Nanorod Arrays | Kun-Mao Pan; Yun-Wei Cheng; Liang-Yi Chen; Ying-Yuan Huang; Min-Yung Ke; Cheng-Pin Chen; Yuh-Renn Wu; JianJang Huang; JIAN-JANG HUANG ; YUH-RENN WU | IEEE Photonics Technology Letters | 4 | 3 | |
148 | 2009 | Mobility study of polycrystalline MgZnO/ZnO thin film layers with Monte Carlo method | Huang, C.-I.; Wu, Y.-R.; Cheng, I.-C.; Chen, J.Z.; Chiu, K.-C.; Lin, T.-S.; I-CHUN CHENG ; JIAN-ZHANG CHEN ; Wu, Yuh-Renn | 13th International Workshop on Computational Electronics, IWCE 2009 | 0 | 0 | |
149 | 2009 | Size-Dependent Strain Relaxation and Optical Characteristics of InGaN/GaN Nanorod LEDs | Wu, YR; Chiu, CH; Chang, CY; Yu, PC; Kuo, HC; YUH-RENN WU | IEEE Journal of Selected Topics in Quantum Electronics | 88 | 82 | |
150 | 2009 | Study of polarization properties of light emitted from a-plane InGaN/GaN quantum well-based light emitting diodes | Huang, HH; Wu, YR; YUH-RENN WU | Journal of Applied Physics | 42 | 68 | |
151 | 2009 | Size-Dependent Strain Relaxation and Emission Characteristics of InGaN/GaN Nanorod Light Emitting Diodes | Wu, Yuh-Renn ; Chiu, Chinghua; Chang, Cheng-Yu; Yu, Peichen; Kuo, Hao-Chung | Selected Topics in Quantum Electronics | |||
152 | 2009 | Electronic and optical properties of InGaN quantum dot based light emitters for solid state lighting | Wu, YR; Lin, YY; Huang, HH; Singh, J; YUH-RENN WU | Journal of Applied Physics | 117 | 105 | |
153 | 2009 | Strain relaxation induced micro-photoluminescence haracteristics of a single InGaN-based nanopillar fabricated by focused ion beam milling | Chiu C.H; Yu P; Chen J.R; Yen H.H; Kao C.C; Kuo H.C; Lu T.C; Wang S.C; YUH-RENN WU ; Yang H.-W; Yeh W.Y. | ECS Transactions | 0 | 0 | |
154 | 2008 | Analysis of Strain Relaxation and Emission Spectrum of A Free-Standing GaN-based Nanopillar | Wu, Yuh-Renn ; Ferguson, Ian T.; Taguchi, Tsunemasa; Yu, Peichen; Chiu, C. H.; Ashdown, Ian E.; Park, Seong-Ju; Chang, Cheng-Yu; Kuo, H. C. | Eighth International Conference on Solid State Lighting | 1 | 0 | |
155 | 2008 | 氮化銦鎵量子(井/點)白光二極體之理論分析 | 吳育任 | ||||
156 | 2008 | Extraction of transport dynamics in AlGaN/GaN HFETs through free carrier absorption | Wu, YR; Hinckley, JM; Singh, J; YUH-RENN WU | Journal of Electronic Materials | 4 | 4 | |
157 | 2008 | Strain relaxation induced microphotoluminescence characteristics of a single InGaN-based nanopillar fabricated by focused ion beam milling | Yu, PC; YUH-RENN WUet al. | Applied Physics Letters | 27 | 21 | |
158 | 2008 | Enhanced growth of anodic alumina nanochannels on Ga-ion pre-irradiated aluminum | Liu, C.Y.; Datta, A.; Liu, N.W.; Wu, Y.R.; Wang, H.H.; Chuang, T.H.; YUH-RENN WU ; TUNG-HAN CHUANG | Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures | 5 | 5 | |
159 | 2008 | Effect of image charges in the drain delay of AlGaN/GaN high electron mobility transistors | Chung, JW; Zhao, X; Wu, YR; Singh, J; Palacios, T; YUH-RENN WU | Applied Physics Letters | 14 | 17 | |
160 | 2007 | Polarization Effects in Semiconductors - From Ab InitioTheory to Device Applications - Chapter II : Lateral and Vertical Charge Transport in Polar Nitride Heterostructures: Applications for HEMTs, Novel Vertical Junction and Sensors | Wu, Yuh-Renn ; Singh, Madhusudan; Singh, Jasprit | ||||
161 | 2007 | Capacitance-voltage characteristics of BiFeO3/SrTiO3/GaN heteroepitaxial structures | Yang, SY; Zhan, Q; Yang, PL; Cruz, MP; Chu, YH; Ramesh, R; Wu, YR; Singh, J; Tian, W; Schlom, DG; YUH-RENN WU | Applied Physics Letters | 55 | 46 | |
162 | 2007 | Transient study of self-heating effects in AlGaN/GaN HFETs: Consequence of carrier velocities, temperature, and device performance | Wu, YR; Singh, J; YUH-RENN WU | Journal of Applied Physics | 44 | 40 | |
163 | 2006 | Device scaling physics and channel velocities in AlGaN/GaN HFETs: Velocities and effective gate length | Wu, YR; Singh, M; Singh, J; YUH-RENN WU | IEEE Transactions on Electron Devices | 51 | 45 | |
164 | 2005 | Velocity overshoot effects and scaling issues in III-V nitrides | Singh, M; Wu, YR; Singh, JP; YUH-RENN WU | IEEE Transactions on Electron Devices | 25 | 22 | |
165 | 2005 | Polar heterostructure for multifunction devices: Theoretical studies | Wu, YR; Singh, J; YUH-RENN WU | IEEE Transactions on Electron Devices | 37 | 32 | |
166 | 2005 | Sources of transconductance collapse in III-V nitrides - Consequences of velocity-field relations and source/gate design | Wu, YR; Singh, M; Singh, J; YUH-RENN WU | IEEE Transactions on Electron Devices | 29 | 23 | |
167 | 2004 | Metal piezoelectric semiconductor field effect transistors for piezoelectric strain sensors | Wu, YR; Singh, J; YUH-RENN WU | Applied Physics Letters | 52 | 44 | |
168 | 2003 | Gate leakage suppression and contact engineering in nitride heterostructures | Wu, YR; Singh, M; Singh, J; YUH-RENN WU | Journal of Applied Physics | 51 | 46 | |
169 | 2003 | Examination of LiNbO3/nitride heterostructures | Singh, M; Wu, YR; Singh, J; YUH-RENN WU | Solid-State Electronics | 20 | 18 | |
170 | 2001 | Real-time observation of ripple structure formation on a diamond surface under focused ion-beam bombardment | Datta, A; Wu, YR; Wang, YL; YUH-RENN WU | Physical Review B | 77 | 67 | |
171 | 1999 | Gas-assisted focused-ion-beam lithography of a diamond (100) surface | Datta, A; Wu, YR; Wang, YL; YUH-RENN WU | Applied Physics Letters | 17 | 13 | |
172 | 1987 | Tool positioning for noncircular cutting with lathe | Tomizuka, M.; Chen, M. S.; Renn, S. ; Tsao, T. C. | Journal of Dynamic Systems, Measurement, and Control |