Results 1-816 of 816 (Search time: 0.009 seconds).

Issue DateTitleAuthor(s)TypescopusWOSFulltext/Archive link
12019Molecular beam epitaxy, atomic layer deposition, and multiple functions connected via ultra-high vacuumLin, K.Y.; Wan, H.W.; Chen, K.H.M.; Fanchiang, Y.T.; Chen, W.S.; Lin, Y.H.; Cheng, Y.T.; Chen, C.C.; Lin, H.Y.; Young, L.B.; Cheng, C.P.; Pi, T.W.; Kwo, J.; Hong, M.; MINGHWEI HONG journal article00
22019Topological insulator Bi <inf>2</inf> Se <inf>3</inf> films on rare earth iron garnets and their high-quality interfacesChen, C.C.; Chen, K.H.M.; Fanchiang, Y.T.; Tseng, C.C.; Yang, S.R.; Wu, C.N.; Guo, M.X.; Cheng, C.K.; Huang, S.W.; Lin, K.Y.; Wu, C.T.; Hong, M.; Kwo, J.; MINGHWEI HONG journal article22
32018In situ direct determination of band offset and interfacial dipole potential of a laminar ALD-Y <inf>2</inf> O <inf>3</inf> on a p-type GaAs(0 0 1)-4 ? 6 surfaceCheng, C.-P.; Chen, W.-S.; Cheng, Y.-T.; Wan, H.-W.; Lin, K.-Y.; Young, L.B.; Yang, C.-Y.; Pi, T.-W.; Kwo, J.; Hong, M.; MINGHWEI HONG journal article00
42018High-quality thulium iron garnet films with tunable perpendicular magnetic anisotropy by off-axis sputtering ??correlation between magnetic properties and film strainWu, C.N.; Tseng, C.C.; Fanchiang, Y.T.; Cheng, C.K.; Lin, K.Y.; Yeh, S.L.; Yang, S.R.; Wu, C.T.; Liu, T.; Wu, M.; Hong, M.; Kwo, J.; MINGHWEI HONG journal article1212
52018Atomic Nature of the Growth Mechanism of Atomic Layer Deposited High-庥 Y <inf>2</inf> O <inf>3</inf> on GaAs(001)-4 ? 6 Based on in Situ Synchrotron Radiation Photoelectron SpectroscopyCheng, C.-P.; Chen, W.-S.; Cheng, Y.-T.; Wan, H.-W.; Yang, C.-Y.; Pi, T.-W.; Kwo, J.; Hong, M.; MINGHWEI HONG journal article34
62018Strongly exchange-coupled and surface-state-modulated magnetization dynamics in Bi <inf>2</inf> Se <inf>3</inf> /yttrium iron garnet heterostructuresFanchiang, Y.T.; Chen, K.H.M.; Tseng, C.C.; Chen, C.C.; Cheng, C.K.; Yang, S.R.; Wu, C.N.; Lee, S.F.; Hong, M.; Kwo, J.; MINGHWEI HONG journal article1412
72018High-quality single-crystal thulium iron garnet films with perpendicular magnetic anisotropy by off-axis sputteringWu, C.N.; Tseng, C.C.; Lin, K.Y.; Cheng, C.K.; Yeh, S.L.; Fanchiang, Y.T.; Hong, M.; Kwo, J.; MINGHWEI HONG journal article66
82018A new stable, crystalline capping material for topological insulatorsLin, H.Y.; Cheng, C.K.; Chen, K.H.M.; Tseng, C.C.; Huang, S.W.; Chang, M.T.; Tseng, S.C.; Hong, M.; Kwo, J.; MINGHWEI HONG journal article11
92018Atom-to-atom interaction of O <inf>2</inf> with epi Ge(001)-2 ? 1 in elucidating GeO <inf>x</inf> formationCheng, Y.-T.; Wan, H.-W.; Cheng, C.-P.; Kwo, J.; Hong, M.; Pi, T.-W.; MINGHWEI HONG journal article11
102018Interfacial perfection for pushing InGaAs and Ge MOS device limits (invited)Hong, M.; Lin, Y.H.; Wan, H.W.; Chen, W.S.; Cheng, Y.T.; Cheng, C.P.; Pi, T.W.; Kwo, J.; MINGHWEI HONG Conference Paper00
112017Effective surface passivation of In<inf>0.53</inf>Ga<inf>0.47</inf>As(0 0 1) using molecular beam epitaxy and atomic layer deposited HfO<inf>2</inf> ??A comparative studyHong, M.; Wan, H.W.; Chang, P.; Lin, T.D.; Chang, Y.H.; Lee, W.C.; Pi, T.W.; Kwo, J.; MINGHWEI HONG journal article21
122017Perfecting the Al<inf>2</inf>O<inf>3</inf>/In<inf>0.53</inf>Ga<inf>0.47</inf>As interfacial electronic structure in pushing metal-oxide-semiconductor field-effect-transistor device limits using in-situ atomic-layer-depositionHong, M.; Wan, H.W.; Lin, K.Y.; Chang, Y.C.; Chen, M.H.; Lin, Y.H.; Lin, T.D.; Pi, T.W.; Kwo, J.; MINGHWEI HONG journal article77
132017Enhancement of effective dielectric constant using high-temperature mixed and sub-nano-laminated atomic layer deposited Y <inf>2</inf> O <inf>3</inf> /Al <inf>2</inf> O <inf>3</inf> on GaAs(001)Lin, K.Y.; Young, L.B.; Cheng, C.K.; Chen, K.H.; Lin, Y.H.; Wan, H.W.; Cai, R.F.; Lo, S.C.; Li, M.Y.; Kwo, J.; Hong, M.; MINGHWEI HONG journal article00
142017Single-crystal hexagonal perovskite YAlO<inf>3</inf> epitaxially on GaAs(111)A and (001) using atomic layer depositionCheng, C.K.; Young, L.B.; Lin, K.Y.; Lin, Y.H.; Wan, H.W.; Lu, G.J.; Chang, M.T.; Cai, R.F.; Lo, S.C.; Li, M.Y.; Hsu, C.H.; Kwo, J.; Hong, M.; MINGHWEI HONG journal article22
152017Van der Waals epitaxy of topological insulator Bi<inf>2</inf>Se<inf>3</inf> on single layer transition metal dichalcogenide MoS<inf>2</inf>Chen, K.H.M.; Lin, H.Y.; Yang, S.R.; Cheng, C.K.; Zhang, X.Q.; Cheng, C.M.; Lee, S.F.; Hsu, C.H.; Lee, Y.H.; Hong, M.; Kwo, J.; MINGHWEI HONG journal article89
162017GaAs metal-oxide-semiconductor push with molecular beam epitaxy Y<inf>2</inf>O<inf>3</inf> ??In comparison with atomic layer deposited Al<inf>2</inf>O<inf>3</inf>Wan, H.W.; Lin, K.Y.; Cheng, C.K.; Su, Y.K.; Lee, W.C.; Hsu, C.H.; Pi, T.W.; Kwo, J.; Hong, M.; MINGHWEI HONG journal article42
172017Analysis of border and interfacial traps in ALD-Y<inf>2</inf>O<inf>3</inf> and -Al<inf>2</inf>O<inf>3</inf> on GaAs via electrical responses - A comparative studyChang, T.W.; Lin, K.Y.; Lin, Y.H.; Young, L.B.; Kwo, J.; Hong, M.; MINGHWEI HONG journal article44
182017Interfacial characteristics of Y<inf>2</inf>O<inf>3</inf>/GaSb(001) grown by molecular beam epitaxy and atomic layer depositionLin, Y.H.; Lin, K.Y.; Hsueh, W.J.; Young, L.B.; Chang, T.W.; Chyi, J.I.; Pi, T.W.; Kwo, J.; Hong, M.; MINGHWEI HONG journal article22
192017Ultra-high thermal stability and extremely low D<inf>it</inf> on HfO<inf>2</inf>/p-GaAs(001) interfaceWan, H.W.; Lin, Y.H.; Lin, K.Y.; Chang, T.W.; Cai, R.F.; Kwo, J.; Hong, M.; MINGHWEI HONG journal article33
202017Surface electronic structure of epi germanium (001)-2 ? 1Cheng, Y.-T.; Lin, Y.-H.; Chen, W.-S.; Lin, K.-Y.; Wan, H.-W.; Cheng, C.-P.; Cheng, H.-H.; Kwo, J.; Hong, M.; Pi, T.-W.; MINGHWEI HONG journal article65
212017Atomic nature of the Schottky barrier height formation of the Ag/GaAs(001)-2???4 interface: An in-situ synchrotron radiation photoemission studyCheng, C.-P.; Chen, W.-S.; Lin, K.-Y.; Wei, G.-J.; Cheng, Y.-T.; Lin, Y.-H.; Wan, H.-W.; Pi, T.-W.; Tung, R.T.; Kwo, J.; Hong, M.; MINGHWEI HONG journal article56
222017Atomic layer deposited single-crystal hexagonal perovskite YAlO<inf>3</inf> epitaxially on GaAs(111)AYoung, L.B.; Cheng, C.-K.; Lu, G.-J.; Lin, K.-Y.; Lin, Y.-H.; Wan, H.-W.; Li, M.-Y.; Cai, R.-F.; Lo, S.-C.; Hsu, C.-H.; Kwo, J.; Hong, M.; MINGHWEI HONG journal article33
232017Relevance of GaAs(001) surface electronic structure for high frequency dispersion on n-type accumulation capacitancePi, T.W.; Chen, W.S.; Lin, Y.H.; Cheng, Y.T.; Wei, G.J.; Lin, K.Y.; Cheng, C.-P.; Kwo, J.; Hong, M.; MINGHWEI HONG journal article22
242017Suppressing Ge diffusion by GaAsSb barriers in molecular beam epitaxy of InGaAs on GeHsueh, W.-J.; Chiu, P.-C.; Hong, M.-H.; Chyi, J.-I.; MINGHWEI HONG journal article00
252016Coherent acoustic phonon oscillation accompanied with backward acoustic pulse below exciton resonance in a ZnO epifilm on oxide-buffered Si(1 1 1)Lin, J.-H.; Shen, Y.-K.; Liu, W.-R.; Lu, C.-H.; Chen, Y.-H.; Chang, C.-P.; Lee, W.-C.; Hong, M.; Kwo, J.-R.; Hsu, C.-H.; Hsieh, W.-F.; MINGHWEI HONG journal article33
262016Demonstration of large field effect in topological insulator films via a high-庥 back gateWang, C.Y.; Lin, H.Y.; Yang, S.R.; Chen, K.H.M.; Lin, Y.H.; Chen, K.H.; Young, L.B.; Cheng, C.K.; Fanchiang, Y.T.; Tseng, S.C.; Hong, M.; Kwo, J.; MINGHWEI HONG journal article22
272016Low interfacial trap density and high-temperature thermal stability in atomic layer deposited single crystal Y <inf>2</inf> O <inf>3</inf> /n-GaAs(001)Lin, Y.-H.; Fu, C.-H.; Lin, K.-Y.; Chen, K.-H.; Chang, T.-W.; Raynien Kwo, J.; Hong, M.; MINGHWEI HONG journal article1010
282016Detection of topological surface states by spin pumping at room temperatureMINGHWEI HONG journal article
292016High quality topological insulator thin films grown by molecular beam epitaxy using MoS2 monolayer as buffer layerMINGHWEI HONG journal article
302015Self-aligned inversion-channel n-InGaAs, p-GaSb, and p-Ge MOSFETs with a common high 庥 gate dielectric using a CMOS compatible processFu, C.H.; Lin, Y.H.; Lee, W.C.; Lin, T.D.; Chu, R.L.; Chu, L.K.; Chang, P.; Chen, M.H.; Hsueh, W.J.; Chen, S.H.; Brown, G.J.; Chyi, J.I.; Kwo, J.; Hong, M.; MINGHWEI HONG journal article1313
312015In-situ atomic layer deposition of tri-methylaluminum and water on pristine single-crystal (In)GaAs surfaces: Electronic and electric structuresPi, T.W.; Lin, Y.H.; Fanchiang, Y.T.; Chiang, T.H.; Wei, C.H.; Lin, Y.C.; Wertheim, G.K.; Kwo, J.; Hong, M.; MINGHWEI HONG journal article1111
322015Single-Crystal Y <inf>2</inf> O <inf>3</inf> Epitaxially on GaAs(001) and (111) Using Atomic Layer DepositionLin, Y.H.; Cheng, C.K.; Chen, K.H.; Fu, C.H.; Chang, T.W.; Hsu, C.H.; Kwo, J.; Hong, M.; MINGHWEI HONG journal article1414
332015Reconstruction at the interface of one cycle of trimethylaluminum and water on GaAs(111)A-2?2 from atomic layer depositionFanchiang, Y.-T.; Chiang, T.-H.; Pi, T.-W.; Wertheim, G.K.; Kwo, J.R.; Hong, M.; MINGHWEI HONG journal article00
342015Single-crystal atomic layer deposited Y&lt;inf&gt;2&lt;/inf&gt;O&lt;inf&gt;3&lt;/inf&gt; on GaAs(0 0 1) - Growth, structural, and electrical characterizationWu, S.Y.; Chen, K.H.; Lin, Y.H.; Cheng, C.K.; Hsu, C.H.; Kwo, J.; Hong, M.; MINGHWEI HONG journal article1717
352015Epitaxial ferromagnetic Fe&lt;inf&gt;3&lt;/inf&gt;Si on GaAs(111)A with atomically smooth surface and interfaceLiu, Y.C.; Chen, Y.W.; Tseng, S.C.; Chang, M.T.; Lo, S.C.; Lin, Y.H.; Cheng, C.K.; Hung, H.Y.; Hsu, C.H.; Kwo, J.; Hong, M.; MINGHWEI HONG journal article23
362015Strongly enhanced spin current in topological insulator/ferromagnetic metal heterostructures by spin pumpingMINGHWEI HONG journal article66
372015Single-Crystal Y2O3 Epitaxially on GaAs (001) and (111) Using Atomic Layer DepositionMINGHWEI HONG journal article
382015Demonstration of large field effect in topological insulator films via a high-kappa back gateMINGHWEI HONG conference paper
392015Using molecular beam epitaxy in a semiconductor structure with a high K/GaSb interfaceMINGHWEI HONG journal article
402015Single-crystal atomic layer deposited Y 2 O 3 on GaAs (001)-growth, structural, and electrical characterizationMINGHWEI HONG journal article
412015In-situ atomic layer deposition of tri-methylaluminum and water on pristine single-crystal (In) GaAs surfaces: electronic and electric structuresMINGHWEI HONG journal article
422015Reconstruction at the interface of one cycle of trimethylaluminum and water on GaAs (111) A-2$\\times$ 2 from atomic layer depositionMINGHWEI HONG journal article
432015Self-aligned inversion-channel n-InGaAs, p-GaSb, and p-Ge MOSFETs with a common high $κ$ gate dielectric using a CMOS compatible processMINGHWEI HONG journal article
442015Investigation of the transport properties of Bi2 Se3 films grown on various substratesMINGHWEI HONG conference paper
452015Epitaxial ferromagnetic Fe3Si on GaAs (111) A with atomically smooth surface and interfaceMINGHWEI HONG journal article
462014Pushing the Material Limits in High Kappa Dielectrics on High Carrier Mobility Semiconductors for Science/Technology Beyond Si CMOS and MoreMINGHWEI HONG report
472014Semiconductor-insulator Interfaces, High $κ$ Dielectrics on (In) GaAsMINGHWEI HONG journal article
482014Single crystal Gd 2 O 3 epitaxially on GaAs (111) AMINGHWEI HONG journal article
492014Observation of strongly enhanced inverse spin Hall voltage in Fe3Si/GaAs structuresMINGHWEI HONG journal article
502014(Invited) High $κ$/InGaAs for Ultimate CMOS-Interfacial Passivation, Low Ohmic Contacts, and Device PerformanceMINGHWEI HONG journal article
512014Synchrotron radiation photoemission study of interfacial electronic structure of HfO2 on In0. 53Ga0. 47As (001)-4$\\times$ 2 from atomic layer depositionMINGHWEI HONG journal article
522014Method and system for manufacturing semiconductor deviceMINGHWEI HONG journal article
532014Greatly improved interfacial passivation of in-situ high $κ$ dielectric deposition on freshly grown molecule beam epitaxy Ge epitaxial layer on Ge (100)MINGHWEI HONG journal article
542014III-V compound semiconductor transistors—from planar to nanowire structuresMINGHWEI HONG journal article
552014Passivation of GaSb using molecular beam epitaxy Y2O3 to achieve low interfacial trap density and high-performance self-aligned inversion-channel p-metal-oxide-semiconductor field-effect-transistorsMINGHWEI HONG journal article
562014MOS Devices with Ultra-High Dielectric Constants and Methods of Forming the SameMINGHWEI HONG journal article
572014Investigation of Spin Pumping in Fe3Si/GaAs and Fe3Si/Bi2Se3 Bilayer StructureMINGHWEI HONG conference paper
582014Passivation of GaSb using molecular beam epitaxy Y <inf>2</inf> O <inf>3</inf> to achieve low interfacial trap density and high-performance self-aligned inversion-channel p-metal-oxide-semiconductor field-effect-transistorsChu, R.L.; Chiang, T.H.; Hsueh, W.J.; Chen, K.H.; Lin, K.Y.; Brown, G.J.; Chyi, J.I.; Kwo, J.; Hong, M.; MINGHWEI HONG journal article2623
592014Synchrotron radiation photoemission study of interfacial electronic structure of HfO<inf>2</inf> on In<inf>0.53</inf>Ga<inf>0.47</inf>As(001)-4 ? 2 from atomic layer depositionPi, T.W.; Lin, T.D.; Lin, H.Y.; Chang, Y.C.; Wertheim, G.K.; Kwo, J.; Hong, M.; MINGHWEI HONG journal article911
602014Greatly improved interfacial passivation of in-situ high 庥 dielectric deposition on freshly grown molecule beam epitaxy Ge epitaxial layer on Ge(100)Chu, R.L.; Liu, Y.C.; Lee, W.C.; Lin, T.D.; Huang, M.L.; Pi, T.W.; Kwo, J.; Hong, M.; MINGHWEI HONG journal article109
612014Observation of strongly enhanced inverse spin Hall voltage in Fe <inf>3</inf> Si/GaAs structuresHung, H.Y.; Chiang, T.H.; Syu, B.Z.; Fanchiang, Y.T.; Lin, J.G.; Lee, S.F.; Hong, M.; Kwo, J.; MINGHWEI HONG journal article55
622014Single crystal Gd<inf>2</inf>O<inf>3</inf> epitaxially on GaAs(111)AChiang, T.-H.; Wu, S.-Y.; Huang, T.-S.; Hsu, C.-H.; Kwo, J.; Hong, M.; MINGHWEI HONG journal article67
632014High 庥/InGaAs for ultimate CMOS - Interfacial passivation, low ohmic contacts, and device performance (Invited)Chang, W.H.; Lin, T.D.; Liao, M.H.; Pi, T.W.; Kwo, J.; Hong, M.; MINGHWEI HONG Conference Paper10
642014III-V compound semiconductor transistors - From planar to nanowire structuresRiel, H.; Wernersson, L.-E.; Hong, M.; Del Alamo, J.A.; MINGHWEI HONG journal article121112
652013Phase Transformation of Molecular Beam Epitaxy-Grown Nanometer-Thick Gd2O3 and Y2O3 on GaNMINGHWEI HONG journal article
662013Inversion-channel GaAs (100) metal-oxide-semiconductor field-effect-transistors using molecular beam deposited Al2O3 as a gate dielectric on different reconstructed surfacesMINGHWEI HONG journal article
672013Surface Passivation of GaSb (100) Using Molecular Beam Epitaxy of Y2O3 and Atomic Layer Deposition of Al2O3: A Comparative StudyMINGHWEI HONG journal article
682013Vertical-cavity and randomly scattered lasing from different thicknesses of epitaxial ZnO films grown on Y 2 O 3-buffered Si (111)MINGHWEI HONG journal article
692013Surface atoms core-level shifts in single crystal GaAs surfaces: Interactions with trimethylaluminum and water prepared by atomic layer depositionMINGHWEI HONG journal article1314
702013Atom-to-atom interactions for atomic layer deposition of trimethylaluminum on Ga-rich GaAs (001)-4$\\times$ 6 and As-rich GaAs (001)-2$\\times$ 4 surfaces: a synchrotron radiation photoemission studyMINGHWEI HONG journal article
712013Detection of inverse spin Hall effect in epitaxial ferromagnetic Fe3Si films with normal metals Au and PtMINGHWEI HONG journal article
722013Interfacial electronic structure of trimethyl-aluminum and water on an In0. 20Ga0. 80As (001)-4$\\times$ 2 surface: A high-resolution core-level photoemission studyMINGHWEI HONG journal article
732013Ferromagnetism in cluster free, transition metal doped high $κ$ dilute magnetic oxides: Films and nanocrystalsMINGHWEI HONG journal article
742013High-performance self-aligned inversion-channel In0. 53Ga0. 47As metal-oxide-semiconductor field-effect-transistors by in-situ atomic-layer-deposited HfO2MINGHWEI HONG journal article
752013High-performance self-aligned inversion-channel In<inf>0.53</inf>Ga <inf>0.47</inf>As metal-oxide-semiconductor field-effect-transistors by in-situ atomic-layer-deposited HfO<inf>2</inf>Lin, T.D.; Chang, W.H.; Chu, R.L.; Chang, Y.C.; Chang, Y.H.; Lee, M.Y.; Hong, P.F.; Chen, M.-C.; Kwo, J.; Hong, M.; MINGHWEI HONG journal article2040
762013Surface passivation of GaSb(100) using molecular beam epitaxy of Y2O3 and atomic layer deposition of Al2O3: A comparative studyChu, R.-L.; Hsueh, W.-J.; Chiang, T.-H.; Lee, W.-C.; Lin, H.-Y.; Lin, T.-D.; Brown, G.J.; Chyi, J.-I.; Huang, T.S.; Pi, T.-W.; Kwo, J.R.; Hong, M.; MINGHWEI HONG journal article1817
772013Interfacial electronic structure of trimethyl-aluminum and water on an In<inf>0.20</inf>Ga<inf>0.80</inf>As(001)-4 ? 2 surface: A high-resolution core-level photoemission studyPi, T.W.; Lin, H.Y.; Chiang, T.H.; Liu, Y.T.; Wertheim, G.K.; Kwo, J.; Hong, M.; MINGHWEI HONG journal article77
782013Phase transformation of molecular beam epitaxy-grown nanometer-thick Gd<inf>2</inf>O<inf>3</inf> and Y<inf>2</inf>O<inf>3</inf> on GaNChang, W.-H.; Wu, S.-Y.; Lee, C.-H.; Lai, T.-Y.; Lee, Y.-J.; Chang, P.; Hsu, C.-H.; Huang, T.-S.; Kwo, J.R.; Hong, M.; MINGHWEI HONG journal article1414
792013Atom-to-atom interactions for atomic layer deposition of trimethylaluminum on Ga-rich GaAs (001)-4 ? 6 and As-rich GaAs(001)-2 ? 4 surfaces: A synchrotron radiation photoemission studyPi, T.-W.; Lin, H.-Y.; Liu, Y.-T.; Lin, T.-D.; Wertheim, G.K.; Kwo, J.; Hong, M.; MINGHWEI HONG journal article0
802013Detection of inverse spin Hall effect in epitaxial ferromagnetic Fe <inf>3</inf>Si films with normal metals Au and PtHung, H.Y.; Luo, G.Y.; Chiu, Y.C.; Chang, P.; Lee, W.C.; Lin, J.G.; Lee, S.F.; Hong, M.; Kwo, J.; MINGHWEI HONG Conference Paper1615
812013Ferromagnetism in cluster free, transition metal doped high 庥 dilute magnetic oxides: Films and nanocrystalsWu, C.N.; Wu, T.S.; Huang, S.Y.; Lee, W.C.; Chang, Y.H.; Soo, Y.L.; Hong, M.; Kwo, J.; MINGHWEI HONG Conference Paper34
822013Inversion-channel GaAs(100) metal-oxide-semiconductor field-effect- transistors using molecular beam deposited Al<inf>2</inf>O<inf>3</inf>as a gate dielectric on different reconstructed surfacesChang, Y.C.; Chang, W.H.; Merckling, C.; Kwo, J.; Hong, M.; MINGHWEI HONG journal article2321
832013Vertical-cavity and randomly scattered lasing from different thicknesses of epitaxial ZnO films grown on Y<inf>2</inf>O<inf>3</inf>-buffered Si (111)Kuo, C.C.; Liu, W.-R.; Lin, B.H.; Hsieh, W.F.; Hsu, C.-H.; Lee, W.C.; Hong, M.; Kwo, J.; MINGHWEI HONG journal article22
842012Metal Oxide Semiconductor Device Studies of Molecular-Beam-Deposited Al2O3/InP Heterostructures with Various Surface Orientations (001), (110), and (111)Chu, Lung-Kun; Merckling, Clement; Dekoster, Johan; Kwo, Jueinai Raynien; Hong, Minghwei ; Caymax, Matty; Heyns, Marcjournal article55
852012Surface-Atom Core-Level Shift in GaAs(111)A-2x2Pi, Tun-Wen; Chen, Bor-Rong; Huang, Mao-Lin; Chiang, Tsung-Hung; Wertheim, Gunther K.; Hong, Minghwei ; Kwo, Jueinaijournal article88
862012InAs MOS devices passivated with molecular beam epitaxy-grown Gd <inf>2</inf> O <inf>3</inf> dielectricsLin, C.A.; Huang, M.L.; Chiu, P.-C.; Lin, H.-K.; Chyi, J.-I.; Chiang, T.H.; Lee, W.C.; Chang, Y.C.; Chang, Y.H.; Brown, G.J.; Kwo, J.; Hong, M.; MINGHWEI HONG journal article33
872012The influence of dislocations on optical and electrical properties of epitaxial ZnO on Si (111) using a 帠-Al <inf>2</inf>O <inf>3</inf> buffer layerLiu, W.-R.; Lin, B.H.; Yang, S.; Kuo, C.C.; Li, Y.-H.; Hsu, C.-H.; Hsieh, W.F.; Lee, W.C.; Hong, M.; Kwo, J.; MINGHWEI HONG journal article1212
882012Ge metal-oxide-semiconductor devices with Al <inf>2</inf>O <inf>3</inf>/Ga <inf>2</inf>O <inf>3</inf>(Gd <inf>2</inf>O <inf>3</inf>) as gate dielectricChu, L.K.; Chiang, T.H.; Lin, T.D.; Lee, Y.J.; Chu, R.L.; Kwo, J.; Hong, M.; MINGHWEI HONG journal article44
892012Correlation between oxygen vacancies and magnetism in Mn-doped Y <inf>2</inf> O <inf>3</inf> nanocrystals investigated by defect engineering techniquesWu, T.S.; Chen, Y.C.; Shiu, Y.F.; Peng, H.J.; Chang, S.L.; Lee, H.Y.; Chu, P.P.; Hsu, C.W.; Chou, L.J.; Pao, C.W.; Lee, J.F.; Kwo, J.; Hong, M.; Soo, Y.L.; MINGHWEI HONG journal article55
902012Effective passivation of In <inf>0.2</inf>Ga <inf>0.8</inf>As by HfO <inf>2</inf> surpassing Al <inf>2</inf>O <inf>3</inf> via in-situ atomic layer depositionChang, Y.H.; Lin, C.A.; Liu, Y.T.; Chiang, T.H.; Lin, H.Y.; Huang, M.L.; Lin, T.D.; Pi, T.W.; Kwo, J.; Hong, M.; MINGHWEI HONG journal article2422
912012Metal oxide semiconductor device studies of molecular-beam-deposited Al <inf>2</inf>O <inf>3</inf>/InP heterostructures with various surface orientations (001), (110), and (111)Chu, L.-K.; Merckling, C.; Dekoster, J.; Kwo, J.R.; Hong, M.; Caymax, M.; Heyns, M.; MINGHWEI HONG journal article55
922012Growth mechanism of atomic layer deposited Al<inf>2</inf>O<inf>3</inf>on GaAs(001)-4 ? 6 surface with trimethylaluminum and water as precursorsHuang, M.L.; Chang, Y.H.; Lin, T.D.; Lin, H.Y.; Liu, Y.T.; Pi, T.W.; Hong, M.; Kwo, J.; MINGHWEI HONG journal article1515
932012Realization of high-quality HfO <inf>2</inf> on In <inf>0.53</inf>Ga <inf>0.47</inf>As by in-situ atomic-layer-depositionLin, T.D.; Chang, Y.H.; Lin, C.A.; Huang, M.L.; Lee, W.C.; Kwo, J.; Hong, M.; MINGHWEI HONG journal article4343
942012Room temperature ferromagnetic behavior in cluster free, Co doped Y <inf>2</inf>O <inf>3</inf> dilute magnetic oxide filmsWu, C.N.; Huang, S.Y.; Lee, W.C.; Chang, Y.H.; Wu, T.S.; Soo, Y.L.; Hong, M.; Kwo, J.; MINGHWEI HONG journal article54
952012Surface-atom core-level shift in GaAs(111)A-2Pi, T.-W.; Chen, B.-R.; Huang, M.-L.; Chiang, T.-H.; Wertheim, G.K.; Hong, M.; Kwo, J.; MINGHWEI HONG journal article88
962012Optimization of Ohmic metal contacts for advanced GaAs-based CMOS deviceMINGHWEI HONG journal article77
972012TL-BASED SUPERCONDUCTING FILMS BY SPUTTERING USING ASINGLE TARGETMINGHWEI HONG journal article
982012The influence of dislocations on optical and electrical properties of epitaxial ZnO on Si (111) using a $γ$-Al 2 O 3 buffer layerMINGHWEI HONG journal article
992012Effective passivation of In0. 2Ga0. 8As by HfO2 surpassing Al2O3 via in-situ atomic layer depositionMINGHWEI HONG journal article
1002012InAs MOS devices passivated with molecular beam epitaxy-grown Gd2O3 dielectricsMINGHWEI HONG journal article
1012012In-situ photoemission analyses of ALD-oxide/InxGa1-xAs (001) interfacesMINGHWEI HONG conference paper
1022012$\\backslash$ textit ${$In-situ$}$ MBE and ALD deposited HfO $ _ ${$2$}$ $ on In $ _ ${$0.53$}$ $ Ga $ _ ${$0.47$}$ $ AsMINGHWEI HONG journal article
1032012$\\backslash$ textit ${$In-situ$}$ photoemission analyses of ALD-oxide/In $ _ ${$x$}$ $ Ga $ _ ${$1-x$}$ $ As (001) interfacesMINGHWEI HONG journal article
1042012Room temperature ferromagnetic behavior in cluster free, Co doped Y2O3 dilute magnetic oxide filmsMINGHWEI HONG journal article
1052012PROPERTIES OF IN-SITU SUPERCONDUCTING Y1Ba2Cu2O7 x FILMS BYMINGHWEI HONG journal article
1062012Realization of high-quality HfO2 on In0. 53Ga0. 47As by in-situ atomic-layer-depositionMINGHWEI HONG journal article
1072012Correlation between oxygen vacancies and magnetism in Mn-doped Y2O3 nanocrystals investigated by defect engineering techniquesMINGHWEI HONG journal article
1082012Metal Oxide Semiconductor Device Studies of Molecular-Beam-Deposited Al2O3/InP Heterostructures with Various Surface Orientations (001),(110), and (111)MINGHWEI HONG journal article
1092012Mapping the band profile across the Gd2O3/GaAs (100) hetero-interface by using scanning tunneling microscopyMINGHWEI HONG conference paper
1102012Growth mechanism of atomic layer deposited Al2O3 on GaAs (001)-4$\\times$ 6 surface with trimethylaluminum and water as precursorsMINGHWEI HONG journal article
1112012Surface-atom core-level shift in GaAs (111) A-2$\\times$ 2MINGHWEI HONG journal article
1122012Thickness-dependent lattice relaxation and the associated optical properties of ZnO epitaxial films grown on Si (111)MINGHWEI HONG journal article45
1132012POWDER-PROCESSED Nb5Al SUPERCONDUCTING WIREMINGHWEI HONG journal article
1142012MAKING A15 SUPERCONDUCTING MATERIALSMINGHWEI HONG journal article
1152012高介電閘極氧化層和金屬閘極於矽和三五半導體之研究MINGHWEI HONG journal article
1162012064603 Surface-Atom Core-Level Shift in GaAs (III) A-2$\\times$ 2MINGHWEI HONG journal article
1172012IN BRONZE-PROCESSED Nb5SnMINGHWEI HONG journal article
1182012Ge metal-oxide-semiconductor devices with Al 2 O 3/Ga 2 O 3 (Gd 2 O 3) as gate dielectricMINGHWEI HONG journal article
1192012Pushing the material limit and physics novelty in high kappa's/high carrier mobility semiconductors for post Si CMOSMINGHWEI HONG conference paper
1202012In-situ MBE and ALD deposited HfO2 on In0. 53Ga0. 47AsMINGHWEI HONG conference paper
1212011Achieving a Low Interfacial Density of States with a Flat Distribution in High-kappa Ga2O3(Gd2O3) Directly Deposited on GeLin, Chunan; Lin, Hanchung; Chiang, Tsunghung; Chu, Reilin; Chu, Lungkun; Lin, Tsungda; Chang, Yaochung; Wang, Wei-E; Kwo, J.Raynien; Hong, Minghwei journal article66
1222011Self-Aligned Inversion-Channel In0.53Ga0.47As Metal-Oxide-Semiconductor Field-Effect Transistors with In-situ Deposited Al2O3/Y2O3 as Gate DielectricsChang, Pen; Chiu, Han-Chin; Lin, Tsung-Da; Huang, Mao-Lin; Chang, Wen-Hsin; Wu, Shao-Yun; Wu, Kang-Hua; Hong, Minghwei ; Kwo, Jueinaijournal article2626
1232011Atomic-scale determination of band offsets at the Gd2O3/GaAs (100) hetero-interface using scanning tunneling spectroscopyMINGHWEI HONG journal article
1242011利用高介電材料與三五族高電子遷移率通道材料之介面調變工程作為鈍化保護以實現超越矽互補式金氧半場效電晶體技術之研究MINGHWEI HONG journal article
1252011InGaAs and Ge MOSFETs with high $κ$ dielectricsMINGHWEI HONG journal article
1262011Thermal annealing and grain boundary effects on ferromagnetism in Y2O3: Co diluted magnetic oxide nanocrystalsMINGHWEI HONG journal article
1272011Publisher's Note:``Attainment of low interfacial trap density absent of a large midgap peak in In0. 2Ga0. 8As by Ga2O3 (Gd2O3) passivation''[Appl. Phys. Lett. 98, 062108 (2011)]MINGHWEI HONG journal article
1282011Passivation of InAs and GaSb with High $κ$ Dielectrics-Growth, Structural, Chemical and Electrical CharacterizationMINGHWEI HONG report
1292011Self-aligned inversion-channel In0. 2Ga0. 8As metal-oxide-semiconductor field-effect transistor with molecular beam epitaxy Al2O3/Ga2O3 (Gd2O3) as the gate dielectricMINGHWEI HONG journal article
1302011Electronic structures of Ga2O3 (Gd2O3) gate dielectric on n-Ge (001) as grown and after CF4 plasma treatment: A synchrotron-radiation photoemission studyMINGHWEI HONG journal article
1312011Direct determination of flat-band voltage for metal/high $κ$ oxide/semiconductor heterointerfaces by electric-field-induced second-harmonic generationMINGHWEI HONG journal article
1322011Achieving a Low Interfacial Density of States with a Flat Distribution in High-$κ$ Ga2O3 (Gd2O3) Directly Deposited on GeMINGHWEI HONG journal article
1332011Direct measurement of interfacial structure in epitaxial Gd 2 O 3 on GaAs (001) using scanning tunneling microscopyMINGHWEI HONG journal article
1342011High-resolution core-level photoemission study of CF ${$sub 4$}$-treated Gd ${$sub 2$}$ O ${$sub 3$}$(Ga ${$sub 2$}$ O ${$sub 3$}$) gate dielectric on Ge probed by synchrotron radiationMINGHWEI HONG journal article
1352011Strong crystal anisotropy of magneto-transport property in Fe 3 Si epitaxial filmMINGHWEI HONG journal article
1362011In situ atomic layer deposition and synchrotron-radiation photoemission study of Al 2 O 3 on pristine n-GaAs (001)-4$\\times$ 6 surfaceMINGHWEI HONG journal article
1372011H 2 S molecular beam passivation of Ge (001)MINGHWEI HONG journal article
1382011Defect density reduction of the Al 2 O 3/GaAs (001) interface by using H 2 S molecular beam passivationMINGHWEI HONG journal article
1392011The growth of an epitaxial ZnO film on Si (111) with a Gd2O3 (Ga2O3) buffer layerMINGHWEI HONG journal article
1402011Achieving very high drain current of 1.23 mA/$μ$m in a 1-$μ$m-gate-length self-aligned inversion-channel MBE-Al 2 O 3/Ga 2 O 3 (Gd 2 O 3)/In 0.75 Ga 0.25 As MOSFETMINGHWEI HONG journal article
1412011Atomic-scale evolution of interfacial electronic band alignment in epitaxial Gd2 O 3 on GaAs (100)MINGHWEI HONG conference paper
1422011Epitaxial stabilization of a monoclinic phase in Y 2 O 3 films on c-plane GaNMINGHWEI HONG journal article
1432011High kappa Dielectrics on InGaAs and GaN-Growth, Interfacial Structural Studies, and Surface Fermi Level UnpinningMINGHWEI HONG report
1442011Room temperature ferromagnetism in cluster free, Co doped Y2 O 3 dilute magnetic oxideMINGHWEI HONG conference paper
1452011MBE—Enabling technology beyond Si CMOSMINGHWEI HONG journal article
1462011Low interfacial density of states around midgap in MBE-Ga 2 O 3 (Gd 2 O 3)/In 0.2 Ga 0.8 AsMINGHWEI HONG journal article
1472011Self-Aligned Inversion-Channel In0. 53Ga0. 47As Metal-Oxide-Semiconductor Field-Effect Transistors with In-situ Deposited Al2O3/Y2O3 as Gate DielectricsMINGHWEI HONG journal article
1482011Passivation of InAs and GaSb with Novel High kappa DielectricsMINGHWEI HONG report
1492011Electrical properties and interfacial chemical environments of in situ atomic layer deposited Al 2 O 3 on freshly molecular beam epitaxy grown GaAsMINGHWEI HONG journal article
1502011Low interfacial trap density and sub-nm equivalent oxide thickness in In0. 53Ga0. 47As (001) metal-oxide-semiconductor devices using molecular beam deposited HfO2/Al2O3 as gate dielectricsMINGHWEI HONG journal article
1512011Atomic-layer-deposited Al 2 O 3 and HfO 2 on GaN: a comparative study on interfaces and electrical characteristicsMINGHWEI HONG journal article
1522011Magnetization reversal processes of epitaxial Fe3Si films on GaAs (001)MINGHWEI HONG journal article
1532011Low interfacial trap density and sub-nm equivalent oxide thickness in In<inf>0.53</inf>Ga<inf>0.47</inf>As (001) metal-oxide-semiconductor devices using molecular beam deposited HfO<inf>2</inf>/Al<inf>2</inf>O<inf>3</inf> as gate dielectricsChu, L.K.; Merckling, C.; Alian, A.; Dekoster, J.; Kwo, J.; Hong, M.; Caymax, M.; Heyns, M.; MINGHWEI HONG journal article5250
1542011Self-aligned inversion-channel In<inf>0.53</inf>Ga<inf>0.47</inf>As Metal-Oxide-Semiconductor Field-Effect Transistors with In-situ Deposited Al2O<inf>3</inf>/Y<inf>2</inf>O<inf>3</inf> as gate dielectricsChang, P.; Chiu, H.-C.; Lin, T.-D.; Huang, M.-L.; Wen-Hsin Chang, Wu, S.-Y.; Wu, K.-H.; Hong, M.; Kwo, J.; MINGHWEI HONG journal article2626
1552011Defect density reduction of the Al<inf>2</inf>O<inf>3</inf>/GaAs(001) interface by using H<inf>2</inf>S molecular beam passivationMerckling, C.; Chang, Y.C.; Lu, C.Y.; Penaud, J.; Brammertz, G.; Scarrozza, M.; Pourtois, G.; Kwo, J.; Hong, M.; Dekoster, J.; Meuris, M.; Heyns, M.; Caymax, M.; MINGHWEI HONG journal article98
1562011Atomic-scale determination of band offsets at the Gd<inf>2</inf>O <inf>3</inf>/GaAs (100) hetero-interface using scanning tunneling spectroscopyChiu, Y.P.; Huang, B.C.; Shih, M.C.; Shen, J.Y.; Chang, P.; Chang, C.S.; Huang, M.L.; Tsai, M.-H.; Hong, M.; Kwo, J.; MINGHWEI HONG journal article1011
1572011Achieving a low interfacial density of states with a flat distribution in high-K Ga<inf>2</inf>O<inf>3</inf>(Gd<inf>2</inf>O<inf>3</inf>) directly deposited on GeLin, C.; Lin, H.; Chiang, T.; Chu, R.; Chu, L.; Lin, T.; Chang, Y.; Wang, W.-E.; Kwo, J.R.; Hong, M.; MINGHWEI HONG journal article66
1582011The growth of an epitaxial ZnO film on Si(111) with a Gd<inf>2</inf>O <inf>3</inf>(Ga<inf>2</inf>O<inf>3</inf>) buffer layerLin, B.H.; Liu, W.R.; Yang, S.; Kuo, C.C.; Hsu, C.-H.; Hsieh, W.F.; Lee, W.C.; Lee, Y.J.; Hong, M.; Kwo, J.; MINGHWEI HONG journal article1313
1592011Achieving very high drain current of 1.23 mA/弮m in a 1-弮m-gate-length self-aligned inversion-channel MBE-Al<inf>2</inf>O<inf>3</inf>/Ga <inf>2</inf>O<inf>3</inf>(Gd<inf>2</inf>O<inf>3</inf>)/In<inf>0.75</inf>Ga <inf>0.25</inf>As MOSFETLin, T.D.; Chang, P.; Wu, Y.D.; Chiu, H.C.; Kwo, J.; Hong, M.; MINGHWEI HONG journal article22
1602011Low interfacial density of states around midgap in MBE-Ga<inf>2</inf>O <inf>3</inf>(Gd<inf>2</inf>O<inf>3</inf>)/In<inf>0.2</inf>Ga<inf>0.8</inf>AsLin, C.A.; Chiu, H.C.; Chiang, T.H.; Chang, Y.C.; Lin, T.D.; Kwo, J.; Wang, W.-E.; Dekoster, J.; Heyns, M.; Hong, M.; MINGHWEI HONG journal article22
1612011In situ atomic layer deposition and synchrotron-radiation photoemission study of Al<inf>2</inf>O<inf>3</inf> on pristine n-GaAs(0 0 1)-4 ? 6 surfaceChang, Y.H.; Huang, M.L.; Chang, P.; Shen, J.Y.; Chen, B.R.; Hsu, C.L.; Pi, T.W.; Hong, M.; Kwo, J.; MINGHWEI HONG Conference Paper1516
1622011Direct determination of flat-band voltage for metal/high 庥 oxide/semiconductor heterointerfaces by electric-field-induced second-harmonic generationChang, C.-L.; Lee, W.C.; Chu, L.K.; Hong, M.; Kwo, J.; Chang, Y.-M.; MINGHWEI HONG journal article23
1632011Direct measurement of interfacial structure in epitaxial Gd <inf>2</inf>O<inf>3</inf> on GaAs (0 0 1) using scanning tunneling microscopyChiu, Y.P.; Shih, M.C.; Huang, B.C.; Shen, J.Y.; Huang, M.L.; Lee, W.C.; Chang, P.; Chiang, T.H.; Hong, M.; Kwo, J.; MINGHWEI HONG Conference Paper22
1642011Epitaxial stabilization of a monoclinic phase in Y<inf>2</inf>O<inf>3</inf> films on c-plane GaNChang, W.H.; Chang, P.; Lee, W.C.; Lai, T.Y.; Kwo, J.; Hsu, C.-H.; Hong, J.M.; Hong, M.; MINGHWEI HONG journal article1818
1652011Atomic-layer-deposited Al<inf>2</inf>O<inf>3</inf> and HfO<inf>2</inf> on GaN: A comparative study on interfaces and electrical characteristicsChang, Y.C.; Huang, M.L.; Chang, Y.H.; Lee, Y.J.; Chiu, H.C.; Kwo, J.; Hong, M.; MINGHWEI HONG Conference Paper5456
1662011Strong crystal anisotropy of magneto-transport property in Fe<inf>3</inf>Si epitaxial filmHung, H.Y.; Huang, S.Y.; Chang, P.; Lin, W.C.; Liu, Y.C.; Lee, S.F.; Hong, M.; Kwo, J.; MINGHWEI HONG journal article44
1672011MBE - Enabling technology beyond Si CMOSChang, P.; Lee, W.C.; Lin, T.D.; Hsu, C.H.; Kwo, J.; Hong, M.; MINGHWEI HONG journal article66
1682011Erratum: Attainment of low interfacial trap density absent of a large midgap peak in In0.2 Ga0.8 As by Ga<inf>2</inf> O<inf>3</inf> (Gd<inf>2</inf> O<inf>3</inf>) passivation (Applied Physics Letters (2011) 98 (062108))Lin, C.A.; Chiu, H.C.; Chiang, T.H.; Lin, T.D.; Chang, Y.H.; Chang, W.H.; Chang, Y.C.; Wang, W.-E.; Dekoster, J.; Hoffmann, T.Y.; Hong, M.; Kwo, J.; MINGHWEI HONG other13
1692011Attainment of low interfacial trap density absent of a large midgap peak in In<inf>0.2</inf>Ga<inf>0.8</inf> As by Ga<inf>2</inf>O<inf>3</inf>(Gd <inf>2</inf>O<inf>3</inf>) passivationLin, C.A.; Chiu, H.C.; Chiang, T.H.; Lin, T.D.; Chang, Y.H.; Chang, W.H.; Chang, Y.C.; Wang, W.-E.; Dekoster, J.; Hoffmann, T.Y.; Hong, M.; Kow, J.; MINGHWEI HONG journal article2421
1702011Electronic structures of Ga <inf>2</inf> O <inf>3</inf> (Gd <inf>2</inf> O <inf>3</inf> ) gate dielectric on n-Ge(001) as grown and after CF <inf>4</inf> plasma treatment: A synchrotron-radiation photoemission studyPi, T.-W.; Lee, W.C.; Huang, M.L.; Chu, L.K.; Lin, T.D.; Chiang, T.H.; Wang, Y.C.; Wu, Y.D.; Hong, M.; Kwo, J.; MINGHWEI HONG journal article33
1712011High-resolution core-level photoemission study of CF <inf>4</inf> -treated Gd <inf>2</inf> O <inf>3</inf> (Ga <inf>2</inf> O <inf>3</inf> ) gate dielectric on Ge probed by synchrotron radiationPi, T.-W.; Huang, M.L.; Lee, W.C.; Chu, L.K.; Lin, T.D.; Chiang, T.H.; Wang, Y.C.; Wu, Y.D.; Hong, M.; Kwo, J.; MINGHWEI HONG journal article99
1722011Thermal annealing and grain boundary effects on ferromagnetism in Y <inf>2</inf> O <inf>3</inf> :Co diluted magnetic oxide nanocrystalsSoo, Y.L.; Wu, T.S.; Wang, C.S.; Chang, S.L.; Lee, H.Y.; Chu, P.P.; Chen, C.Y.; Chou, L.J.; Chan, T.S.; Hsieh, C.A.; Lee, J.F.; Kwo, J.; Hong, M.; MINGHWEI HONG journal article1092
1732011Electrical properties and interfacial chemical environments of in situ atomic layer deposited Al<inf>2</inf>O<inf>3</inf> on freshly molecular beam epitaxy grown GaAsChang, Y.H.; Huang, M.L.; Chang, P.; Lin, C.A.; Chu, Y.J.; Chen, B.R.; Hsu, C.L.; Kwo, J.; Pi, T.W.; Hong, M.; MINGHWEI HONG Conference Paper2829
1742011H2S molecular beam passivation of Ge(0 0 1)Merckling, C.; Chang, Y.C.; Lu, C.Y.; Penaud, J.; El-Kazzi, M.; Bellenger, F.; Brammertz, G.; Hong, M.; Kwo, J.; Meuris, M.; Dekoster, J.; Heyns, M.M.; Caymax, M.; MINGHWEI HONG Conference Paper88
1752011Magnetization reversal processes of epitaxial Fe<inf>3</inf>Si films on GaAs(001)Liu, Y.C.; Chang, P.; Huang, S.Y.; Chang, L.J.; Lin, W.C.; Lee, S.F.; Hong, M.; Kwo, J.; MINGHWEI HONG Conference Paper44
1762011InGaAs and Ge MOSFETs with high 庥 dielectricsLee, W.C.; Chang, P.; Lin, T.D.; Chu, L.K.; Chiu, H.C.; Kwo, J.; Hong, M.; MINGHWEI HONG Conference Paper109
1772011Self-aligned inversion-channel In<inf>0.2</inf>Ga<inf>0.8</inf>As metal-oxide-semiconductor field-effect transistor with molecular beam epitaxy Al<inf>2</inf> O<inf>3</inf>/Ga<inf>2</inf>O<inf>3</inf>(Gd<inf>2</inf>O <inf>3</inf>) as the gate dielectricChang, W.H.; Chiang, T.H.; Wu, Y.D.; Hong, M.; Lin, C.A.; Kwo, J.; MINGHWEI HONG journal article44
1782010$\\backslash$ textit ${$In-situ$}$ XPS, STM and STS analyses of high k oxide/III-V interfacesMINGHWEI HONG journal article
1792010Effective reduction of interfacial traps in Al 2 O 3/GaAs (001) gate stacks using surface engineering and thermal annealingMINGHWEI HONG journal article
1802010High-quality molecular-beam-epitaxy-grown Ga2O3 „Gd2O3… on Ge „100…: Electrical and chemical characterizationsMINGHWEI HONG journal article
1812010InGaAs and Ge MOSFETs with a common high $κ$ gate dielectricMINGHWEI HONG conference paper
1822010Engineering of threshold voltages in molecular beam epitaxy-grown Al2O3/Ga2O3 (Gd2O3)/In0. 2Ga0. 8AsMINGHWEI HONG journal article
1832010Structural Characteristics of Nanometer Thick Gd2O3 Films Grown on GaN (0001)MINGHWEI HONG journal article
1842010A15 SUPERCONDUCTORS THROUGH DIRECT SOLID-STATE PRECIPITATION: V3Ga AND N63AIMINGHWEI HONG journal article
1852010Self-aligned inversion-channel In 0.75 Ga 0.25 As metal-oxide-semiconductor field-effect-transistors using UHV-Al 2 O 3/Ga 2 O 3 (Gd 2 O 3) and ALD-Al 2 O 3 as gate dielectricsMINGHWEI HONG journal article
1862010High Dielectrics on High Carrier Mobility InGaAs Compound Semiconductors and GaN-Growth, Interfacial Structural Studies, and Surface Fermi Level UnpinningMINGHWEI HONG report
1872010Method for forming substrates for MOS transistor components and its productsMINGHWEI HONG journal article
1882010Effective passivation and high-performance metal-oxide-semiconductor devices using ultra-high-vacuum deposited high-$κ$ dielectrics on Ge without interfacial layersMINGHWEI HONG journal article
1892010Drain current enhancement and negligible current collapse in GaN MOSFETs with atomic-layer-deposited HfO 2 as a gate dielectricMINGHWEI HONG journal article
1902010Nano-electronics of high k dielectrics on exotic semiconductors for science and technology beyond Si CMOSMINGHWEI HONG conference paper00
1912010Strong crystal anisotropy of magneto-transport property in Fe3Si epitaxial filmsMINGHWEI HONG conference paper
1922010InGaAs, Ge, and GaN metal-oxide-semiconductor devices with high-k dielectrics for science and technology beyond Si CMOSMINGHWEI HONG book-chapter10
1932010Great reduction of interfacial traps in Al 2 O 3/GaAs (100) starting with Ga-rich surface and through systematic thermal annealingMINGHWEI HONG conference paper
1942010DC and RF characteristics of self-aligned inversion-channel In0. 53Ga0. 47As MOSFETs using MBE-Al2O3/Ga2O3 (Gd2O3) as gate dielectricsMINGHWEI HONG journal article
1952010Passivation of InGaAs using in situ molecular beam epitaxy Al2O3/HfO2 and HfAlO/HfO2MINGHWEI HONG journal article
1962010In-situ XPS, STM and STS analyses of high k oxide/III-V interfacesMINGHWEI HONG conference paper
1972010Achieving high-performance Ge MOS devices using high-к gate dielectrics Ga 2 O 3 (Gd 2 O 3) of sub-nm EOTMINGHWEI HONG conference paper
1982010dc and rf characteristics of self-aligned inversion-channel In0. 53 Ga0. 47As metal-oxide-semiconductor field-effect transistors using molecular beam epitaxy-Al2O3/Ga2O3 (Gd2O3) as gate dielectricsMINGHWEI HONG journal article
1992010Lattice strain and in situ chemical depth profiling of nanometer-thick molecular beam epitaxy grown Y2O3 epitaxial films on Si (111)MINGHWEI HONG journal article
2002010Bulk and Surface Excitations in Gd2O3: Electron Energy Loss Spectroscopy StudyMINGHWEI HONG conference paper
2012010Al2O3/Ga2O3 (Gd2O3) passivation on In0. 20Ga0. 80As/GaAs—structural intactness with high-temperature annealingMINGHWEI HONG journal article
2022010Self-aligned inversion-channel In<inf>0.75</inf>Ga<inf>0.25</inf>As metal-oxide-semiconductor field-effect-transistors using UHV-Al <inf>2</inf>O<inf>3</inf>/Ga<inf>2</inf>O<inf>3</inf>(Gd<inf>2</inf>O <inf>3</inf>) and ALD-Al<inf>2</inf>O<inf>3</inf> as gate dielectricsLin, T.D.; Chiu, H.C.; Chang, P.; Chang, Y.H.; Wu, Y.D.; Hong, M.; Kwo, J.; MINGHWEI HONG Conference Paper3333
2032010Drain current enhancement and negligible current collapse in GaN MOSFETs with atomic-layer-deposited HfO<inf>2</inf> as a gate dielectricChang, Y.C.; Chang, W.H.; Chang, Y.H.; Kwo, J.; Lin, Y.S.; Hsu, S.H.; Hong, J.M.; Tsai, C.C.; Hong, M.; MINGHWEI HONG journal article1616
2042010Effective reduction of interfacial traps in Al2 O 3/GaAs (001) gate stacks using surface engineering and thermal annealingChang, Y.C.; Merckling, C.; Penaud, J.; Lu, C.Y.; Wang, W.-E.; Dekoster, J.; Meuris, M.; Caymax, M.; Heyns, M.; Kwo, J.; Hong, M.; MINGHWEI HONG journal article6058
2052010Effective passivation and high-performance metal-oxide-semiconductor devices using ultra-high-vacuum deposited high-庥 dielectrics on Ge without interfacial layersChu, L.K.; Chu, R.L.; Lin, T.D.; Lee, W.C.; Lin, C.A.; Huang, M.L.; Lee, Y.J.; Kwo, J.; Hong, M.; MINGHWEI HONG Conference Paper2020
2062010Great reduction of interfacial traps in Al<inf>2</inf>O<inf>3</inf>/GaAs (100) starting with Ga-rich surface and through systematic thermal annealingChang, Y.C.; Merckling, C.; Penaud, J.; Lu, C.Y.; Brammertz, G.; Wang, W.-E.; Hong, M.; Kwo, J.; Dekoster, Caymax, M.; Meuris, M.; Heyns, M.; MINGHWEI HONG Conference Paper00
2072010InGaAs and Ge MOSFETs with a common high 庥 gate dielectricLee, W.C.; Lin, T.D.; Chu, L.K.; Chang, P.; Chang, Y.C.; Chu, R.L.; Chiu, H.C.; Lin, C.A.; Chang, W.H.; Chiang, T.H.; Lee, Y.J.; Hong, M.; Kwo, J.; MINGHWEI HONG Conference Paper10
2082010InGaAs, Ge, and GaN metal-oxide-semiconductor devices with high-k dielectrics for science and technology beyond Si CMOSHong, M.; Kwo, J.; Lin, T.D.; Huang, M.L.; Lee, W.C.; Chang, P.; MINGHWEI HONG Book Chapter10
2092010Structural characteristics of nanometer thick Gd<inf>2</inf>O<inf>3</inf> films grown on GaN (0001)Chang, W.H.; Chang, P.; Lai, T.Y.; Lee, Y.J.; Kwo, J.; Hsu, C.-H.; Hong, M.; MINGHWEI HONG journal article1110
2102010Achieving high-performance Ge MOS devices using high-庥 gate dielectrics Ga2O3(Gd2O3) of sub-nm EOTChu, L.K.; Chu, R.L.; Lin, C.A.; Lin, T.D.; Chiang, T.H.; Kwo, J.; Hong, M.; MINGHWEI HONG Conference Paper20
2112010Al<inf>2</inf>O<inf>3</inf>/Ga<inf>2</inf>O<inf>3</inf>(Gd <inf>2</inf>O<inf>3</inf>) passivation on In<inf>0.20</inf>Ga <inf>0.80</inf>As/GaAs - Structural intactness with high-temperature annealingLee, Y.J.; Lee, C.H.; Tung, L.T.; Chiang, T.H.; Lai, T.Y.; Kwo, J.; Hsu, C.-H.; Hong, M.; MINGHWEI HONG journal article1010
2122010Dc and rf characteristics of self-aligned inversion-channel In <inf>0.53</inf> Ga<inf>0.47</inf> As metal-oxide-semiconductor field-effect transistors using molecular beam epitaxy-Al<inf>2</inf> O<inf>3</inf> / Ga <inf>2</inf> O<inf>3</inf> (Gd<inf>2</inf> O<inf>3</inf>) as gate dielectricsLin, T.D.; Chang, P.; Chiu, H.C.; Hong, M.; Kwo, J.; Lin, Y.S.; Hsu, S.S.H.; MINGHWEI HONG Conference Paper42
2132010Engineering of threshold voltages in molecular beam epitaxy-grown Al <inf>2</inf> O<inf>3</inf> / Ga<inf>2</inf> O<inf>3</inf> (Gd<inf>2</inf> O <inf>3</inf>) / In<inf>0.2</inf> Ga<inf>0.8</inf> AsWu, Y.D.; Lin, T.D.; Chiang, T.H.; Chang, Y.C.; Chiu, H.C.; Lee, Y.J.; Hong, M.; Lin, C.A.; Kwo, J.; MINGHWEI HONG Conference Paper713
2142010Lattice strain and in situ chemical depth profiling of nanometer-thick molecular beam epitaxy grown Y<inf>2</inf> O<inf>3</inf> epitaxial films on Si (111)Lee, Y.J.; Lee, W.C.; Huang, M.L.; Wu, S.Y.; Nieh, C.W.; Hong, M.; Kwo, J.; Hsu, C.-H.; MINGHWEI HONG Conference Paper02
2152010Passivation of InGaAs using in situ molecular beam epitaxy Al2 O3 / HfO2 and HfAlO/ HfO2Chang, P.; Lee, W.C.; Huang, M.L.; Lee, Y.J.; Hong, M.; Kwo, J.; MINGHWEI HONG Conference Paper68
2162009Nanometer-Thick Single-Crystal Hexagonal Gd2O3 on GaN for Advanced Complementary Metal-Oxide-Semiconductor TechnologyMINGHWEI HONG journal article
2172009InGaAs Metal Oxide Semiconductor Devices with Ga 2 O 3 (Gd 2 O 3) High-$κ$ Dielectrics for Science and Technology beyond Si CMOSMINGHWEI HONG journal article
2182009High performance self-aligned inversion-channel MOSFETs with In 0.53 Ga 0.47 As channel and ALD-Al 2 O 3 gate dielectricMINGHWEI HONG conference paper
2192009Inversion-channel GaN MOSFET using atomic-layer-deposited Al 2 O 3 as gate dielectricMINGHWEI HONG conference paper
2202009Nano-electronics of high $κ$ dielectrics on InGaAs for key technologies beyond Si CMOSMINGHWEI HONG book-chapter
2212009Inversion-channel enhancement-mode GaAs MOSFETs with regrown source and drain contactsMINGHWEI HONG journal article54
2222009Surface exciton polariton in monoclinic HfO2: an electron energy-loss spectroscopy studyMINGHWEI HONG journal article88
2232009High $κ$ dielectric single-crystal monoclinic Gd 2 O 3 on GaN with excellent thermal, structural, and electrical propertiesMINGHWEI HONG journal article
2242009Ga2O3 (Gd2O3) on Ge without interfacial layers—energy band parameters and metal oxide semiconductor devicesMINGHWEI HONG journal article
2252009GaN on Si with nm-thick single-crystal Sc 2 O 3 as a template using molecular beam epitaxyMINGHWEI HONG journal article
2262009Self-aligned inversion channel In 0.53 Ga 0.47 As n-MOSFETs with ALD-Al 2 O 3 and MBE-Al 2 O 3/Ga 2 O 3 (Gd 2 O 3) as gate dielectricsMINGHWEI HONG conference paper
2272009Achieving nearly free fermi-level movement and V th engineering in Ga 2 O 3 (Gd 2 O 3)/In 0.2 Ga 0.8 AsMINGHWEI HONG conference paper
2282009Energy-band parameters of atomic-layer-deposited Al $ _ ${$2$}$ $ O $ _ ${$3$}$ $ and HfO $ _ ${$2$}$ $ on InxGa $ _ ${$1-x$}$ $ AsMINGHWEI HONG journal article
2292009Metal-oxide-semiconductor devices with UHV-Ga 2 O 3 (Gd 2 O 3) on Ge (100)MINGHWEI HONG conference paper
2302009GaN metal-oxide-semiconductor diodes with molecular beam epitaxy-Al 2 O 3 as a template followed by atomic layer deposition growthMINGHWEI HONG journal article
2312009Energy-band parameters of atomic layer deposited Al 2 O 3 and HfO 2 on In x Ga AsMINGHWEI HONG journal article
2322009Metal-oxide-semiconductor devices with molecular beam epitaxy-grown Y 2 O 3 on GeMINGHWEI HONG journal article
2332009Self-aligned inversion-channel In 0.75 Ga 0.25 As MOSFETs using MBE-Al 2 O 3/Ga 2 O 3 (Gd 2 O 3) and ALD-Al 2 O 3 as gate dielectricsMINGHWEI HONG conference paper
2342009Enhancement Mode InGaAs MOSFETsMINGHWEI HONG journal article
2352009The Quest for III-V MOSFET Beyond Si CMOSMINGHWEI HONG journal article
2362009High performance Ga 2 O 3 (Gd 2 O 3)/Ge MOS devices without interfacial layersMINGHWEI HONG conference paper
2372009Molecular beam epitaxy-grown Al 2 O 3/HfO 2 high-$κ$ dielectrics for germaniumMINGHWEI HONG journal article
2382009InGaAs MOSCAPs and self-aligned inversion-channel MOSFETs with Al2O3/Ga2O3 (Gd2O3) as a gate dielectricMINGHWEI HONG journal article
2392009Depletion-mode In 0.2 Ga 0.8 As/GaAs MOSFET with molecular beam epitaxy grown Al 2 O 3/Ga 2 O 3 (Gd 2 O 3) as gate dielectricsMINGHWEI HONG journal article
2402009Research advances on III-V MOSFET electronics beyond Si CMOSMINGHWEI HONG journal article1111
2412009Advances on III-V MOSFET for Science and Technology beyond Si CMOSMINGHWEI HONG journal article10
2422009Nanometer-thick single-crystal hexagonal Gd<inf>2</inf>O<inf>3</inf> on GaN for advanced complementary metal-oxide-semiconductor technologyChang, W.H.; Lee, C.H.; Chang, Y.C.; Chang, P.; Huang, M.L.; Lee, Y.J.; Hsu, C.-H.; Hong, J.M.; Tsai, C.C.; Kwo, J.R.; Hong, M.; MINGHWEI HONG journal article5552
2432009Achieving nearly free fermi-level movement and V<inf>th</inf>engineering in Ga<inf>2</inf>O<inf>3</inf>(Gd<inf>2</inf>O<inf>3</inf>)/In<inf>0.2</inf>Ga<inf>0.8</inf>AsLin, T.D.; Wu, Y.D.; Chang, Y.C.; Chiang, T.H.; Chuang, C.Y.; Lin, C.A.; Chang, W.H.; Chiu, H.C.; Tsai, W.; Kwo, J.; Hong, M.; MINGHWEI HONG Conference Paper00
2442009InGaAs MOSCAPs and self-aligned inversion-channel MOSFETs with Al <inf>2</inf>O<inf>3</inf>/Ga<inf>2</inf>O<inf>3</inf>(Gd<inf>2</inf>O <inf>3</inf>) as a gate dielectricLin, T.D.; Chiu, H.C.; Chang, P.; Lee, W.C.; Chinag, T.H.; Kwo, J.; Tsai, W.; Hong, M.; MINGHWEI HONG Conference Paper10
2452009Advances on III-V MOSFET for science and technology beyond Si CMOSKwo, J.; Lin, T.D.; Huang, M.L.; Chang, P.; Lee, Y.J.; Hong, M.; MINGHWEI HONG Conference Paper10
2462009Self-aligned inversion channel In<inf>0.53</inf>Ga<inf>0.47</inf>As N-MOSFETs with ALD-Al<inf>2</inf>O<inf>3</inf>and MBE-Al<inf>2</inf>O<inf>3</inf>/Ga<inf>2</inf>O<inf>3</inf>(Gd<inf>2</inf>O<inf>3</inf>) as gate dielectricsChiu, H.C.; Lin, T.D.; Chang, P.; Lee, W.C.; Chiang, C.H.; Kwo, J.; Lin, Y.S.; Hsu, S.S.H.; Tsai, W.; Hong, M.; MINGHWEI HONG Conference Paper80
2472009Self-aligned inversion-channel In<inf>0.75</inf>Ga<inf>0.25</inf>As MOSFETs using MBE-Al<inf>2</inf>O<inf>3</inf>/Ga<inf>2</inf>O<inf>3</inf>(Gd <inf>2</inf>O<inf>3</inf>) and ALD-Al<inf>2</inf>O<inf>3</inf> as gate dielectricsLin, T.D.; Chiu, H.C.; Chang, P.; Chang, Y.H.; Lin, C.A.; Chang, W.H.; Kwo, J.; Tsai, W.; Hong, M.; MINGHWEI HONG Conference Paper10
2482009GaN metal-oxide-semiconductor diodes with molecular beam epitaxy-Al<inf>2</inf>O<inf>3</inf> as a template followed by atomic layer deposition growthChang, Y.H.; Chiu, H.C.; Chang, W.H.; Kwo, J.; Tsai, C.C.; Hong, J.M.; Hong, M.; MINGHWEI HONG journal article1313
2492009Depletion-mode In0.2Ga0.8As/GaAs MOSFET with molecular beam epitaxy grown Al2O3/Ga2O3(Gd2O3) as gate dielectricsLin, C.A.; Lin, T.D.; Chiang, T.H.; Chiu, H.C.; Chang, P.; Hong, M.; Kwo, J.; MINGHWEI HONG journal article1010
2502009Inversion-channel GaN MOSFET using atomic-layer-deposited Al <inf>2</inf>O<inf>3</inf> as gate dielectricChang, Y.C.; Chang, W.H.; Chiu, H.C.; Chang, Y.H.; Tung, L.T.; Lee, C.H.; Hong, M.; Kwo, J.; Hong, J.M.; Tsai, C.C.; MINGHWEI HONG Conference Paper20
2512009Ga2O3(Gd2O3) on Ge without interfacial layers: Energy-band parameters and metal oxide semiconductor devicesChu, L.K.; Lin, T.D.; Huang, M.L.; Chu, R.L.; Chang, C.C.; Kwo, J.; Hong, M.; MINGHWEI HONG journal article2626
2522009Nano-electronics of high 庥 dielectrics on ingaas for key technologies beyond Si CMOSLin, T.D.; Chang, P.; Chiu, H.C.; Chang, Y.C.; Lin, C.A.; Chang, W.H.; Lee, Y.J.; Chang, Y.H.; Huang, M.L.; Kwo, J.; Hong, M.; MINGHWEI HONG Conference Paper20
2532009Metal-oxide-semiconductor devices with UHV-Ga <inf>2</inf> O <inf>3</inf> (Gd <inf>2</inf> O <inf>3</inf> ) on Ge(100)Chu, L.K.; Lin, T.D.; Lee, C.H.; Tung, L.T.; Lee, W.C.; Chu, R.L.; Chang, C.C.; Hong, M.; Kwo, J.; MINGHWEI HONG Conference Paper00
2542009High performance Ga<inf>2</inf>O<inf>3</inf>(Gd<inf>2</inf>O <inf>3</inf>)/Ge MOS devices without interfacial layersChu, L.K.; Chu, R.L.; Huang, M.L.; Tung, L.T.; Lin, T.D.; Chang, C.C.; Kwo, J.; Hong, M.; MINGHWEI HONG Conference Paper00
2552009High 庥 dielectric single-crystal monoclinic Gd<inf>2</inf>O<inf>3</inf> on GaN with excellent thermal, structural, and electrical propertiesChang, W.H.; Lee, C.H.; Chang, P.; Chang, Y.C.; Lee, Y.J.; Kwo, J.; Tsai, C.C.; Hong, J.M.; Hsu, C.-H.; Hong, M.; MINGHWEI HONG journal article4547
2562009Molecular beam epitaxy-grown Al<inf>2</inf>O<inf>3</inf>/HfO<inf>2</inf> high-庥 dielectrics for germaniumLee, W.C.; Chin, B.H.; Chu, L.K.; Lin, T.D.; Lee, Y.J.; Tung, L.T.; Lee, C.H.; Hong, M.; Kwo, J.; MINGHWEI HONG journal article1516
2572009Metal-oxide-semiconductor devices with molecular beam epitaxy-grown Y<inf>2</inf>O<inf>3</inf> on GeChu, L.K.; Lee, W.C.; Huang, M.L.; Chang, Y.H.; Tung, L.T.; Chang, C.C.; Lee, Y.J.; Kwo, J.; Hong, M.; MINGHWEI HONG journal article3935
2582009Domain matching epitaxial growth of high-quality ZnO film using a Y <inf>2</inf>O<inf>3</inf> buffer layer on Si (111)Liu, W.-R.; Li, Y.-H.; Hsieh, W.F.; Hsu, C.-H.; Lee, W.C.; Lee, Y.J.; Hong, M.; Kwo, J.; MINGHWEI HONG journal article3031
2592009InGaAs metal oxide semiconductor devices with Ga<inf>2</inf>O <inf>3</inf>(Gd<inf>2</inf>O<inf>3</inf>) High-庥 dielectrics for science and technology beyond Si CMOSHong, M.; Kwo, J.; Lin, T.D.; Huang, M.L.; MINGHWEI HONG journal article3332
2602009GaN on Si with nm-thick single-crystal Sc<inf>2</inf>O<inf>3</inf> as a template using molecular beam epitaxyLee, W.C.; Lee, Y.J.; Kwo, J.; Hsu, C.H.; Lee, C.H.; Wu, S.Y.; Ng, H.M.; Hong, M.; MINGHWEI HONG journal article1111
2612009Energy-band parameters of atomic layer deposited Al2O 3 and HfO2 on InxGa1-xAsHuang, M.L.; Chang, Y.C.; Chang, Y.H.; Lin, T.D.; Kwo, J.; Hong, M.; MINGHWEI HONG journal article6059
2622008Si metal-oxide-semiconductor devices with high kappa HfO2 fabricated using a novel MBE template approach followed by atomic layer depositionMINGHWEI HONG journal article
2632008Achieving a low interfacial density of states in atomic layer deposited Al 2 O 3 on In 0.53 Ga 0.47 AsMINGHWEI HONG journal article
2642008Sub-nanometer EOT scaling on In 0.53 Ga 0.47 As with atomic layer deposited HfO 2 as gate dielectricMINGHWEI HONG book-chapter
2652008Inversion n-channel GaN MOSFETs with atomic-layer-deposited A1 2 O 3 as gate dielectricsMINGHWEI HONG book-chapter
2662008Correlation between crystal structure and photoluminescence for epitaxial ZnO on Si (1 1 1) using a $γ$-Al2O3 buffer layerMINGHWEI HONG journal article
2672008Growth and structural characteristics of GaN/AlN/nanothick gamma-Al (2) O (3)/Si (111)MINGHWEI HONG journal article
2682008High-quality nanothick single-crystal Y (2) O (3) films epitaxially grown on Si (111): Growth and structural characteristicsMINGHWEI HONG journal article
2692008Inelastic Electron Tunneling Spectroscopy Study of MOS Diodes Based on High-kappa Gate DielectricsMINGHWEI HONG conference paper
2702008Transmission electron microscopy characterization of HfO2/GaAs (001) heterostructures grown by molecular beam epitaxyMINGHWEI HONG journal article
2712008Oxide scalability in Al2O3/Ga2O3 (Gd2O3)/In0. 20Ga0. 80As/GaAs heterostructuresMINGHWEI HONG journal article
2722008Self-aligned inversion-channel and D-mode InGaAs MOSFET using Al 2 O 3/Ga 2 O 3 (Gd 2 O 3 as gate dielectricsMINGHWEI HONG conference paper
2732008Oxide scalability in Al [sub 2] O [sub 3]/Ga [sub 2] O [sub 3](Gd [sub 2] O [sub 3])/In [sub 0.20] Ga [sub 0.80] As/GaAs heterostructuresMINGHWEI HONG journal article
2742008Interfacial-layers-free Ga2O3 (Gd2O3)/Ge MOS DiodesMINGHWEI HONG conference paper
2752008High-performance self-aligned inversion-channel In 0.53 Ga 0.47 As metal-oxide-semiconductor field-effect-transistor with Al 2 O 3/Ga 2 O 3 (Gd 2 O 3) as gate dielectricsMINGHWEI HONG journal article
2762008Inelastic electron tunneling spectroscopy study of metal-oxide-semiconductor diodes based on high-k gate dielectricsMINGHWEI HONG journal article
2772008Self-aligned inversion n-channel In 0.2 Ga 0.8 As/GaAs metal-oxide-semiconductor field-effect-transistors with TiN gate and Ga 2 O 3 (Gd 2 O 3) dielectricMINGHWEI HONG journal article
27820081 nm equivalent oxide thickness in Ga 2 O 3 (Gd 2 O 3)/In 0.2 Ga 0.8 As metal-oxide-semiconductor capacitorsMINGHWEI HONG journal article
2792008Approaching Fermi level unpinning in oxide-In0. 2Ga0. 8AsMINGHWEI HONG conference paper
2802008Nanometer thick single crystal Y2O3 films epitaxially grown on Si (111) with structures approaching perfectionMINGHWEI HONG journal article
2812008Atomic-layer-deposited HfO 2 on In 0.53 Ga 0.47 As: Passivation and energy-band parametersMINGHWEI HONG journal article
2822008Molecular beam epitaxy grown Ga2O3 (Gd2O3) high kappa dielectrics for germanium passivation-x-ray photoelectron spectroscopy and electrical characteristicsMINGHWEI HONG journal article
2832008Inversion-channel GaN metal-oxide-semiconductor field-effect transistor with atomic-layer-deposited Al 2 O 3 as gate dielectricMINGHWEI HONG journal article
2842008Domain matching epitaxial growth of high-quality ZnO film using a Y2O3 buffer layer on Si (111)MINGHWEI HONG journal article
2852008Achieving 1 nm capacitive effective thickness in atomic layer deposited HfO 2 on In 0.53 Ga 0.47 AsMINGHWEI HONG journal article
2862008Time dependent preferential sputtering in the HfO 2 layer on Si (100)MINGHWEI HONG journal article
2872008Achieving a low interfacial density of states in atomic layer deposited Al<inf>2</inf> O<inf>3</inf> on In<inf>0.53</inf> Ga<inf>0.47</inf> AsChiu, H.C.; Tung, L.T.; Chang, Y.H.; Lee, Y.J.; Chang, C.C.; Kwo, J.; Hong, M.; MINGHWEI HONG journal article5448
2882008Self-aligned inversion-channel and D-mode InGaAs MOSFET using Al <inf>2</inf>O<inf>3</inf>/Ga<inf>2</inf>O<inf>3</inf>(Gd2O3) as gate dielectricsLin, T.D.; Chen, C.P.; Chiu, H.C.; Chang, P.; Lin, C.A.; Hong, M.; Kwo, J.; Tsai, W.; MINGHWEI HONG Conference Paper140
2892008Self-aligned inversion n-channel In<inf>0.2</inf>Ga<inf>0.8</inf>As/GaAs metal-oxide-semiconductor field-effect-transistors with TiN gate and Ga<inf>2</inf>O<inf>3</inf>(Gd<inf>2</inf>O<inf>3</inf>) dielectricChen, C.P.; Lin, T.D.; Lee, Y.J.; Chang, Y.C.; Hong, M.; Kwo, J.; MINGHWEI HONG journal article1717
2902008High-performance self-aligned inversion-channel In0.53 Ga0.47 As metal-oxide-semiconductor field-effect-transistor with Al2 O3 Ga2 O3 (Gd2 O3) as gate dielectricsLin, T.D.; Chiu, H.C.; Chang, P.; Tung, L.T.; Chen, C.P.; Hong, M.; Kwo, J.; Tsai, W.; Wang, Y.C.; MINGHWEI HONG journal article131119
2912008Inversion-channel GaN metal-oxide-semiconductor field-effect transistor with atomic-layer-deposited Al2 O3 as gate dielectricChang, Y.C.; Chang, W.H.; Chiu, H.C.; Tung, L.T.; Lee, C.H.; Shiu, K.H.; Hong, M.; Kwo, J.; Hong, J.M.; Tsai, C.C.; MINGHWEI HONG journal article6045
2922008Si metal-oxide-semiconductor devices with high 庥 Hf O2 fabricated using a novel MBE template approach followed by atomic layer depositionPan, C.H.; Kwo, J.; Lee, K.Y.; Lee, W.C.; Chu, L.K.; Huang, M.L.; Lee, Y.J.; Hong, M.; MINGHWEI HONG journal article44
2932008High-quality nanothick single-crystal Y2 O3 films epitaxially grown on Si (111): Growth and structural characteristicsLee, Y.J.; Lee, W.C.; Nieh, C.W.; Yang, Z.K.; Kortan, A.R.; Hong, M.; Kwo, J.; Hsu, C.-H.; MINGHWEI HONG journal article1314
2942008Molecular beam epitaxy grown Ga2 O3 (Gd2 O3) high 庥 dielectrics for germanium passivation-x-ray photoelectron spectroscopy and electrical characteristicsLee, C.H.; Lin, T.D.; Tung, L.T.; Huang, M.L.; Hong, M.; Kwo, J.; MINGHWEI HONG journal article2121
2952008Achieving 1 nm capacitive effective thickness in atomic layer deposited HfO<inf>2</inf> on In<inf>0.53</inf>Ga<inf>0.47</inf>AsLee, K.Y.; Lee, Y.J.; Chang, P.; Huang, M.L.; Chang, Y.C.; Hong, M.; Kwo, J.; MINGHWEI HONG journal article4338
2962008Inversion n-channel GaN MOSFETs with atomic-layer-deposited Al <inf>2</inf> O <inf>3</inf> as gate dielectricsChang, Y.C.; Chang, W.H.; Chiu, H.C.; Shiu, K.H.; Lee, C.H.; Hong, M.; Kwo, J.; Hong, J.M.; Tsai, C.C.; MINGHWEI HONG Conference Paper10
2972008Approaching fermi level unpinning in oxide-in<inf>o.2</inf>ga<inf>o.8</inf>asChiang, T.H.; Lee, W.C.; Lin, T.D.; Lin, D.; Shiu, K.H.; Kwo, J.; Wang, W.E.; Tsai, W.; Hong, M.; MINGHWEI HONG Conference Paper110
2982008Inelastic electron tunneling spectroscopy study of metal-oxide- semiconductor diodes based on high-庥 gate dielectricsYou, S.L.; Huang, C.C.; Wang, C.J.; Ho, H.C.; Kwo, J.; Lee, W.C.; Lee, K.Y.; Wu, Y.D.; Lee, Y.J.; Hong, M.; MINGHWEI HONG journal article57
2992008Correlation between crystal structure and photoluminescence for epitaxial ZnO on Si (1 1 1) using a 帠-Al<inf>2</inf>O<inf>3</inf> buffer layerLiu, W.-R.; Li, Y.-H.; Hsieh, W.F.; Hsu, C.-H.; Lee, W.C.; Hong, M.; Kwo, J.; MINGHWEI HONG journal article1516
3002008Atomic-layer-deposited Hf O2 on In0.53 Ga0.47 As: Passivation and energy-band parametersChang, Y.C.; Huang, M.L.; Lee, K.Y.; Lee, Y.J.; Lin, T.D.; Hong, M.; Kwo, J.; Lay, T.S.; Liao, C.C.; Cheng, K.Y.; MINGHWEI HONG journal article10995
3012008Transmission electron microscopy characterization of HfO <inf>2</inf>/GaAs(001) heterostructures grown by molecular beam epitaxyLiou, S.C.; Chu, M.-W.; Chen, C.H.; Lee, Y.J.; Chang, P.; Lee, W.C.; Hong, M.; Kwo, J.; MINGHWEI HONG journal article88
3022008Growth and structural characteristics of GaN/AIN/nanothick 帠-Al <inf>2</inf>O<inf>3</inf>/Si(111)Lee, W.C.; Lee, Y.J.; Tung, L.T.; Wu, S.Y.; Lee, C.H.; Hong, M.; Ng, H.M.; Kwo, J.; Hsu, C.H.; MINGHWEI HONG journal article77
3032008Oxide scalability in Al2 O3 Ga2 O3 (Gd2 O3) In0.20 Ga0.80 AsGaAs heterostructuresShiu, K.H.; Chiang, C.H.; Lee, Y.J.; Lee, W.C.; Chang, P.; Tung, L.T.; Hong, M.; Kwo, J.; Tsai, W.; MINGHWEI HONG journal article1213
3042008Nanometer thick single crystal Y2 O3 films epitaxially grown on Si (111) with structures approaching perfectionNieh, C.W.; Lee, Y.J.; Lee, W.C.; Yang, Z.K.; Kortan, A.R.; Hong, M.; Kwo, J.; Hsu, C.-H.; MINGHWEI HONG journal article1214
30520081 nm equivalent oxide thickness in Ga2 O3 (Gd2 O3) In0.2 Ga0.8 As metal-oxide-semiconductor capacitorsShiu, K.H.; Chiang, T.H.; Chang, P.; Tung, L.T.; Hong, M.; Kwo, J.; Tsai, W.; MINGHWEI HONG journal article4842
3062008Time dependent preferential sputtering in the HfO2 layer on Si(100)Chang, S.J.; Lee, W.C.; Hwang, J.; Hong, M.; Kwo, J.; MINGHWEI HONG journal article1516
3072007Determination of three-dimensional interfacial strain - A novel method of probing interface structure with X-ray Bragg-surface diffractionSun, W.-C.; Chu, C.-H.; Chang, H.-C.; Wu, B.-K.; Chen, Y.-R.; Cheng, C.-W.; Chiu, M.-S.; Shen, Y.-C.; Wu, H.-H.; Hung, Y.-S.; Chang, S.-L.; Hong, M.-H.; Tang, M.-T.; Stetsko, Yu.P.; MINGHWEI HONG journal article32
3082007Ga2 O3 (Gd2 O3) Si3 N4 dual-layer gate dielectric for InGaAs enhancement mode metal-oxide-semiconductor field-effect transistor with channel inversionZheng, J.F.; Tsai, W.; Lin, T.D.; Lee, Y.J.; Chen, C.P.; Hong, M.; Kwo, J.; Cui, S.; Ma, T.P.; MINGHWEI HONG journal article2322
3092007Local environment surrounding Co in MBE-grown Co-doped Hf O2 thin films probed by EXAFSSoo, Y.L.; Weng, S.C.; Sun, W.H.; Chang, S.L.; Lee, W.C.; Chang, Y.S.; Kwo, J.; Hong, M.; Ablett, J.M.; Kao, C.-C.; Liu, D.G.; Lee, J.F.; MINGHWEI HONG journal article1111
3102007Observation of room temperature ferromagnetic behavior in cluster-free, Co doped Hf O<inf>2</inf> filmsChang, Y.H.; Soo, Y.L.; Lee, W.C.; Huang, M.L.; Lee, Y.J.; Weng, S.C.; Sun, W.H.; Hong, M.; Kwo, J.; Lee, S.F.; Ablett, J.M.; Kao, C.-C.; MINGHWEI HONG journal article2020
3112007Structural and compositional investigation of yttrium-doped HfO<inf>2</inf> films epitaxially grown on Si (111)Yang, Z.K.; Lee, W.C.; Lee, Y.J.; Chang, P.; Huang, M.L.; Hong, M.; Yu, K.L.; Tang, M.-T.; Lin, B.-H.; Hsu, C.-H.; Kwo, J.; MINGHWEI HONG journal article1817
3122007Structural and electrical characteristics of atomic layer deposited high 庥 HfO<inf>2</inf>on GaNChang, Y.C.; Chiu, H.C.; Lee, Y.J.; Huang, M.L.; Lee, K.Y.; Hong, M.; Chiu, Y.N.; Kwo, J.; Wang, Y.H.; MINGHWEI HONG journal article9980
3132007InGaAs n-MOS devices integrated using ALD-HfO<inf>2</inf>/metal gate without surface cleaning and interfacial layer passivationChang, Y.C.; Huang, M.L.; Lee, Y.J.; Lee, K.Y.; Lin, T.D.; Hong, M.; Kwo, J.; Liao, C.C.; Cheng, K.Y.; Lay, T.S.; MINGHWEI HONG Conference Paper00
3142007Defining new frontiers in electronic devices with high 庥 dielectrics and interfacial engineeringHong, M.; Lee, W.C.; Huang, M.L.; Chang, Y.C.; Lin, T.D.; Lee, Y.J.; Kwo, J.; Hsu, C.H.; Lee, H.Y.; MINGHWEI HONG journal article99
3152007Self-aligned inversion n-channel In<inf>0.2</inf>Ga<inf>0.8</inf>As/GaAs MOSFET with TiN gate and Ga<inf>2</inf>O<inf>3</inf> (Gd<inf>2</inf>O <inf>3</inf>) dielectricChen, C.-P.; Lin, T.-D.; Chang, Y.-C.; Hong, M.; Kwo, J.R.; MINGHWEI HONG Conference Paper00
3162007Depletion-mode GaAs-based MOSFET with Ga <inf>2</inf> O <inf>3</inf> (Gd <inf>2</inf> O <inf>3</inf> ) as a gate dielectricTsai, P.J.; Chu, L.K.; Chen, Y.W.; Chiu, Y.N.; Yang, H.P.; Chang, P.; Kwo, J.; Chi, J.; Hong, M.; MINGHWEI HONG journal article1111
3172007MBE grown high 庥 dielectrics Ga<inf>2</inf>O<inf>3</inf>(Gd<inf>2</inf>O<inf>3</inf>) on GaNChang, Y.C.; Lee, Y.J.; Chiu, Y.N.; Lin, T.D.; Wu, S.Y.; Chiu, H.C.; Kwo, J.; Wang, Y.H.; Hong, M.; MINGHWEI HONG journal article3840
3182007Structural and magnetic properties of epitaxial Fe<inf>3</inf>Si/GaAs heterostructuresHsu, Y.L.; Lee, Y.J.; Chang, Y.H.; Huang, M.L.; Chiu, Y.N.; Ho, C.C.; Chang, P.; Hsu, C.H.; Hong, M.; Kwo, J.; MINGHWEI HONG journal article1313
3192007Cubic HfO<inf>2</inf> doped with y<inf>2</inf>O<inf>2</inf> epitaxial films on GaAs (001) of enhanced dielectric constantYang, Z.K.; Lee, W.C.; Lee, Y.J.; Chang, P.; Huang, M.L.; Hong, M.; Hsu, C.-H.; Kwo, J.; MINGHWEI HONG journal article4646
3202007Effect of Al incorporation in the thermal stability of atomic-layer- deposited HfO<inf>2</inf> for gate dielectric applicationsChiou, Y.-K.; Chang, C.-H.; Wang, C.-C.; Lee, K.-Y.; Wu, T.-B.; Kwo, R.; Hong, M.; MINGHWEI HONG journal article3331
3212007A novel approach of using a MBE template for ALD growth of high-庥 dielectricsLee, K.Y.; Lee, W.C.; Huang, M.L.; Chang, C.H.; Lee, Y.J.; Chiu, Y.K.; Wu, T.B.; Hong, M.; Kwo, R.; MINGHWEI HONG journal article66
3222007III-V metal-oxide-semiconductor field-effect transistors with high 庥 dielectricsHong, M.; Kwo, J.R.; Tsai, P.-C.; Chang, Y.; Huang, M.-L.; Chen, C.-P.; Lin, T.-D.; MINGHWEI HONG journal article8883
3232007MBE grown high-quality Gd<inf>2</inf>O<inf>3</inf>/Si(1 1 1) hetero-structureLin, T.D.; Hang, M.C.; Hsu, C.H.; Kwo, J.; Hong, M.; MINGHWEI HONG journal article1616
3242007Advance in next Century nanoCMOSFET researchMINGHWEI HONG journal article22
3252007III? V Metal? Oxide? Semiconductor Field-Effect Transistors with High? DielectricsMINGHWEI HONG journal article
3262007Investigations of a New Diluted Magnetic Oxide with Room Temperature Ferromagnetism in Co-doped HfO2MINGHWEI HONG conference paper
3272007Self-aligned inversion n-channel In 0.2 Ga 0.8 As/GaAs MOSFET with TiN gate and Ga 2 O 3 (Gd 2 O 3) dielectricMINGHWEI HONG book-chapter
3282007MBE and ALD grown High k Dielectrics Gate Stacks on GaNMINGHWEI HONG conference paper
3292007High $κ$ Gate Dielectrics for Compound SemiconductorsMINGHWEI HONG book-chapter
3302007Novel Epitaxy Between Oxides and Semiconductors-Growth and Interfacial StructuresMINGHWEI HONG report
3312007Method for forming a semiconductor device having a structure of a single crystal scandium oxide film formed on a silicon substrateMINGHWEI HONG journal article
3322007A novel approach of using a MBE template for ALD growth of high-$κ$ dielectricsMINGHWEI HONG journal article
3332007Defining new frontiers in electronic devices with high $κ$ dielectrics and interfacial engineeringMINGHWEI HONG journal article
3342007Observation of room temperature ferromagnetic behavior in cluster-free, Co doped HfO2 filmsMINGHWEI HONG journal article
3352007MOS Ge Diodes Based on High kappa Gate Dielectrics Grown by MBE and ALDMINGHWEI HONG conference paper
3362007Interfacial trap characteristics in depletion mode GaAs MOSFETsMINGHWEI HONG journal article11
3372007Enhancement-Mode (with Channel Inversion) and Depletion-Mode MOSFETs with Ga2O3 (Gd2O3)/Si3N4 Dual-Layer Gate Dielectrics on In0. 2Ga0. 8AsMINGHWEI HONG journal article
3382007Ga 2 O 3 „Gd 2 O 3…/Si 3 N 4 dual-layer gate dielectric for InGaAs enhancement mode metal-oxide-semiconductor field-effect transistor with channel inversionMINGHWEI HONG journal article
3392007具有單晶氧化鈧接面膜的磊晶用基板之製作方法MINGHWEI HONG journal article
3402007Structural and compositional investigation of yttrium-doped HfO2 films epitaxially grown on Si (111)MINGHWEI HONG journal article
3412007Depletion-mode GaAs-based MOSFET with Ga 2 O 3 (Gd 2 O 3) as a gate dielectricMINGHWEI HONG journal article
3422007Structural and magnetic properties of epitaxial Fe 3 Si/GaAs heterostructuresMINGHWEI HONG journal article
3432007The mechanism of Fermi level pinning/unpinning at high k Oxide/GaAs interfaceMINGHWEI HONG conference paper
3442007Cubic HfO2 doped with Y2O3 epitaxial films on GaAs (001) of enhanced dielectric constantMINGHWEI HONG journal article
3452007InGaAs n-MOS devices integrated using ALD-HfO2/metal gate without surface cleaning and interfacial layer passivationMINGHWEI HONG conference paper
3462007MBE grown high $κ$ dielectrics Ga 2 O 3 (Gd 2 O 3) on GaNMINGHWEI HONG journal article
3472007Effect of Al incorporation in the thermal stability of atomic-layer-deposited HfO2 for gate dielectric applicationsMINGHWEI HONG journal article
3482007Structural and electrical characteristics of atomic layer deposited high kappa HfO2 on GaNMINGHWEI HONG journal article
3492007Local environment surrounding Co in MBE-grown Co-doped Hf O 2 thin films probed by EXAFSMINGHWEI HONG journal article
3502007MBE grown high-quality Gd 2 O 3/Si (111) hetero-structureMINGHWEI HONG journal article
3512006Local Environment Surrounding Co in MBE-grown HfO2: Co Thin Films Probed by EXAFS and XMCDMINGHWEI HONG conference paper
3522006Cubic HfO2 Doped with Y2O3 for Advanced Gate Dielectrics by MBE.MINGHWEI HONG conference paper
3532006GENNADI BERSUKER, BRENDAN FORAN, AND PAT LYSAGHTMINGHWEI HONG journal article
3542006High-quality Thin Single-Crystal Y2O3 films Grown on Si (111)MINGHWEI HONG conference paper
3552006Interfacial self-cleaning in atomic layer deposition of HfO 2 gate dielectric on In 0.15 Ga 0.85 AsMINGHWEI HONG journal article
3562006Molecular beam epitaxy grown template for subsequent atomic layer deposition of high k dielectricsMINGHWEI HONG journal article
3572006III-V Compound Semiconductor MOSFETMINGHWEI HONG journal article
3582006Flicker noise characteristics in GaAs MOSFETsMINGHWEI HONG journal article
3592006GENNADI BERSUKER, BRENDAN FORAN, ANDMINGHWEI HONG journal article
3602006Structure, composition and order at interfaces of crystalline oxides and other high-K materials on siliconMINGHWEI HONG book-chapter
3612006Very low voltage SiO2/HfON/HfAlO/TaN memory with fast speed and good retentionMINGHWEI HONG journal article
3622006A Novel Template Approach by MBE for ALD Growth of High k DielectricsMINGHWEI HONG conference paper
3632006III-V MOSFET's with Advanced High k DielectricsMINGHWEI HONG journal article
3642006Structural and electrical characteristics of Ga2O3 (Gd2O3)/GaAs under high temperature annealingMINGHWEI HONG journal article
3652006Measuring and modeling the scaling trend of the RF noise in MOSFETsMINGHWEI HONG book-chapter
3662006Structure of Sc 2 O 3 films epitaxially grown on $α$-Al 2 O 3 (0001)MINGHWEI HONG journal article
3672006High performance micro-crystallized TaN/SrTiO3/TaN capacitors for analog and RF applicationsMINGHWEI HONG conference paper
3682006Structure of HfO2 films epitaxially grown on GaAs (001)MINGHWEI HONG journal article
3692006Advance in next century nano CMOSFET research and its future prospect for industryMINGHWEI HONG journal article
3702006Structural Investigation of Epitaxial HfO2 Films by X-ray ScatteringMINGHWEI HONG journal article
3712006Magnetic Properties of Co-doped HfO2MINGHWEI HONG conference paper
3722006Advanced High K Dielectrics for Nano Electronics-Science and TechnologiesMINGHWEI HONG journal article
3732006Structure, Composition and Order at Interfaces of Crystalline Oxides and Other High $κ$ Materials on SiMINGHWEI HONG journal article
3742006Energy-band parameters of atomic-layer-deposition Al̃ 2Õ 3/InGaAs heterostructureMINGHWEI HONG journal article
3752006Structural and electrical characteristics of Ga2 O3 (Gd2 O3) GaAs under high temperature annealingChen, C.P.; Lee, Y.J.; Chang, Y.C.; Yang, Z.K.; Hong, M.; Kwo, J.; Lee, H.Y.; Lay, T.S.; MINGHWEI HONG journal article3029
3762006Interfacial self-cleaning in atomic layer deposition of HfO<inf>2</inf> gate dielectric on In<inf>0.15</inf>Ga<inf>0.85</inf>AsChang, C.-H.; Chiou, Y.-K.; Chang, Y.-C.; Lee, K.-Y.; Lin, T.-D.; Wu, T.-B.; Hong, M.; Kwo, J.; MINGHWEI HONG journal article126110
3772006Measuring interface strains at the atomic resolution in depth using x-ray Bragg-surface diffractionSun, W.C.; Chang, H.C.; Wu, B.K.; Chen, Y.R.; Chu, C.H.; Chang, S.L.; Hong, M.; Tang, M.T.; Stetsko, Y.P.; MINGHWEI HONG journal article1111
3782006Energy-band parameters of atomic-layer-deposition Al<inf>2</inf>O <inf>3</inf>/InGaAs heterostructureHuang, M.L.; Chang, Y.C.; Chang, C.H.; Lin, T.D.; Kwo, J.; Wu, T.B.; Hong, M.; MINGHWEI HONG journal article146143
3792006Structure of Sc <inf>2</inf>O <inf>3</inf> films epitaxially grown on 帢-Al <inf>2</inf>O <inf>3</inf> (0001)Kortan, A.R.; Kopylov, N.; Kwo, J.; Hong, M.; Chen, C.P.; Mannaerts, J.P.; Liou, S.H.; MINGHWEI HONG journal article0
3802006Molecular beam epitaxy grown template for subsequent atomic layer deposition of high 庥 dielectricsLee, K.Y.; Lee, W.C.; Lee, Y.J.; Huang, M.L.; Chang, C.H.; Wu, T.B.; Hong, M.; Kwo, J.; MINGHWEI HONG journal article1718
3812006Structure of HfO<inf>2</inf>films epitaxially grown on GaAs (001)Hsu, C.-H.; Chang, P.; Lee, W.C.; Yang, Z.K.; Lee, Y.J.; Hong, M.; Kwo, J.; Huang, C.M.; Lee, H.Y.; MINGHWEI HONG journal article2526
3822006III-V MOSFET's with advanced high 庥 dielectricsHong, M.; Kwo, J.; Chen, C.P.; Chang, Y.C.; Huang, M.L.; Lin, T.D.; MINGHWEI HONG Conference Paper00
3832005Surface passivation of III-V compound semiconductors using atomic-layer-deposition-grown Al<inf>2</inf>O<inf>3</inf>Huang, M.L.; Chang, Y.C.; Chang, C.H.; Lee, Y.J.; Chang, P.; Kwo, J.; Wu, T.B.; Hong, M.; MINGHWEI HONG journal article0
3842005Advanced high 庥 dielectrics for nano-electronics - Science and technologiesHong, M.; Kwo, J.; MINGHWEI HONG Conference Paper40
3852005MBE-grown high 庥 gate dielectrics of HfO <inf>2</inf> and (Hf-Al)O <inf>2</inf> for Si and III-V semiconductors nano-electronicsLee, W.C.; Lee, Y.J.; Wu, Y.D.; Chang, P.; Huang, Y.L.; Hsu, Y.L.; Mannaerts, J.P.; Lo, R.L.; Chen, F.R.; Maikap, S.; Lee, L.S.; Hsieh, W.Y.; Tsai, M.J.; Lin, S.Y.; Gustffson, T.; Hong, M.; Kwo, J.; MINGHWEI HONG Conference Paper0
3862005Depth-profile study of the electronic structures at Ga<inf>2</inf>O <inf>3</inf>(Gd<inf>2</inf>O<inf>3</inf>) and Gd<inf>2</inf>O<inf>3</inf>-GaN interfaces by X-ray photoelectron spectroscopyLay, T.S.; Liao, Y.Y.; Hung, W.H.; Hong, M.; Kwo, J.; Mannaerts, J.P.; MINGHWEI HONG Conference Paper0
3872005Thermodynamic stability of Ga <inf>2</inf> O <inf>3</inf> (Gd <inf>2</inf> O <inf>3</inf> ) GaAs interfaceHuang, Y.L.; Chang, P.; Yang, Z.K.; Lee, Y.J.; Lee, H.Y.; Liu, H.J.; Kwo, J.; Mannaerts, J.P.; Hong, M.; MINGHWEI HONG journal article0
3882005Thin single-crystal Sc<inf>2</inf>O<inf>3</inf> films epitaxially grown on Si (1 1 1) - Structure and electrical propertiesChen, C.P.; Hong, M.; Kwo, J.; Cheng, H.M.; Huang, Y.L.; Lin, S.Y.; Chi, J.; Lee, H.Y.; Hsieh, Y.F.; Mannaerts, J.P.; MINGHWEI HONG Conference Paper0
3892005High-quality thin single-crystal 帠-Al <inf>2</inf> O <inf>3</inf> films grown on Si (111)Wu, S.Y.; Hong, M.; Kortan, A.R.; Kwo, J.; Mannaerts, J.P.; Lee, W.C.; Huang, Y.L.; MINGHWEI HONG journal article4234
3902005Depth profiling the electronic structures at HfO<inf>2</inf>/Si interface grown by molecular beam epitaxyLay, T.S.; Chang, S.C.; Din, G.J.; Yeh, C.C.; Hung, W.H.; Lee, W.G.; Kwo, J.; Hong, M.; MINGHWEI HONG Conference Paper56
3912005Depletion-mode InGaAs/GaAs MOSFET with Oxide Passivated by Amorphous SiMINGHWEI HONG journal article
3922005Department of Materials Science and Engineering, National Tsing Hua University, Hsin Chu, 300, TaiwanMINGHWEI HONG journal article
3932005Thin single-crystal Sc 2 O 3 films epitaxially grown on Si (111)—structure and electrical propertiesMINGHWEI HONG journal article
3942005Thin single crystal Sc2O3 Films on Si (111) with very sharp interfaceMINGHWEI HONG conference paper
3952005Papers from the 22nd North American Conference on Molecular Beam Epitaxy-Oxides-Depth profiling the electronic structures at HfO2/Si interface grown by molecular beam epitaxyMINGHWEI HONG journal article
3962005Depth profiling the electronic structures at HfO2/Si interface grown by molecular beam epitaxyMINGHWEI HONG journal article
3972005High-quality thin single-crystal $γ$-Al2O3 films grown on Si (111)MINGHWEI HONG journal article
3982005Growth rate effects on InGaAs/GaAs quantum dotsMINGHWEI HONG journal article
3992005High-quality nanothickness single-crystal Sc2O3 film grown on Si (111)MINGHWEI HONG journal article
4002005Depth-profile study of the electronic structures at Ga 2 O 3 (Gd 2 O 3) and Gd 2 O 3-GaN interfaces by X-ray photoelectron spectroscopyMINGHWEI HONG journal article
4012005MBE-grown high $κ$ gate dielectrics of HfO 2 and (Hf-Al) O 2 for Si and III-V semiconductors nano-electronicsMINGHWEI HONG journal article
4022005Surface passivation of III-V compound semiconductors using atomic-layer-deposition-grown Al̃ 2Õ 3MINGHWEI HONG journal article
4032005Thermodynamic stability of Ga2O3 (Gd2O3)/GaAs interfaceMINGHWEI HONG journal article
4042004GaAs-based metal-oxide semiconductor field-effect transistors with Al <inf>2</inf> O <inf>3</inf> gate dielectrics grown by atomic layer depositionYe, P.D.; Wilk, G.D.; Yang, B.; Kwo, J.; Gossmann, H.-J.L.; Frei, M.; Mannaerts, J.P.; Sergent, M.; Hong, M.; Ng, K.K.; Bude, J.; MINGHWEI HONG journal article
4052004對三五族 MOSFET 的探索-材料科學和物理 (II)MINGHWEI HONG journal article
4062004GaAs-Based metal-oxide semiconductor field-effect transistors with Al2O3 gate dielectrics grown by atomic layer depositionMINGHWEI HONG journal article
4072004Depletion-mode InGaAs metal-oxide-semiconductor field-effect transistor with oxide gate dielectric grown by atomic-layer depositionMINGHWEI HONG journal article135125
4082004Structure of Sc 2 O 3 Films Epitaxially Grown on $α$-Al 2 O 3 (111)MINGHWEI HONG journal article
4092004Epitaxial Growth and Structure of Thin Single Crystal $γ$-Al 2 O 3 Films on Si (111) Using e-Beam Evaporation of Sapphire in Ultra-High VacuumMINGHWEI HONG journal article
4102004行政院國家科學委員會專題研究計畫 期中進度報告MINGHWEI HONG journal article
4112004Fundamental Study and Oxide Reliability of the MBE-Grown Ga 2- x Gd x O 3 Dielectric Oxide for Compound Semiconductor MOSFETsMINGHWEI HONG journal article
4122003Rapid post-metallization annealing effects on high-k Y<inf>2</inf>O<inf>3</inf>/Si capacitorLay, T.S.; Liao, Y.Y.; Liu, W.D.; Lai, Y.H.; Hung, W.H.; Kwo, J.; Hong, M.; Mannaerts, J.P.; MINGHWEI HONG journal article
4132003Advances in high 庥 gate dielectrics for Si and III-V semiconductorsKwo, J.; Hong, M.; Busch, B.; Muller, D.A.; Chabal, Y.J.; Kortan, A.R.; Mannaerts, J.P.; Yang, B.; Ye, P.; Gossmann, H.; Sergent, A.M.; Ng, K.K.; Bude, J.; Schulte, W.H.; Garfunkel, E.; Gustafsson, T.; MINGHWEI HONG Conference Paper0
4142003GaAs MOSFET with oxide gate dielectric grown by atomic layer depositionYe, P.D.; Wilk, G.D.; Kwo, J.; Yang, B.; Gossmann, H.-J.L.; Frei, M.; Chu, S.N.G.; Mannaerts, J.P.; Sergent, M.; Hong, M.; Ng, K.K.; Bude, J.; MINGHWEI HONG other
4152003GaAs MOSFET with oxide gate dielectric grown by atomic layer depositionMINGHWEI HONG journal article204182
4162003Direct determination of the stacking order in Gd ${$sub 2$}$ O ${$sub 3$}$ epi-layers on GaAs.MINGHWEI HONG report
4172003Advances in high $κ$ gate dielectrics for Si and III-V semiconductorsMINGHWEI HONG journal article
4182003Rapid post-metallization annealing effects on high-k Y 2 O 3/Si capacitorMINGHWEI HONG journal article
4192003High k Gate Dielectrics For Si And Compound Semiconductors By Molecular Beam EpitaxyMINGHWEI HONG journal article
4202003Direct Determination of the Stacking Order in Gd̃ 2Õ 3 Epi-Layers on GaAsMINGHWEI HONG journal article
4212003Impact of metal/oxide interface on DC and RF performance of depletion-mode GaAs MOSFET employing MBE grown Ga 2 O 3 (Gd 2 O 3) as gate dielectricMINGHWEI HONG journal article
4222003GaAs-based MOSFETs with Al/sub 2/O/sub 3/gate dielectrics grown by atomic layer depositionMINGHWEI HONG conference paper
42320034E709A, Connell Four Drive, Berkeley Heights, NJ 07922MINGHWEI HONG journal article
4242003NaCl: OH^-color center laser modelocked by a novel bonded saturable Bragg reflectorMINGHWEI HONG journal article
4252003Optimization of AuGe-Ni-Au ohmic contacts for GaAs MOSFETsMINGHWEI HONG journal article2828
4262003GaAs metal-oxide-semiconductor field-effect transistor with nanometer-thin dielectric grown by atomic layer depositionMINGHWEI HONG journal article273244
4272003Schottky barrier height and interfacial state density on oxide-GaAs interfaceMINGHWEI HONG journal article1513
4282002High dielectric constant gate oxides for silicon-based devicesMINGHWEI HONG journal article
4292002Electrical characteristics of ultrathin Pt/Y 2 O 3/Si capacitor with rapid post-metallisation annealingMINGHWEI HONG journal article
4302002Method of making an article comprising an oxide layer on a GaAs-based semiconductor bodyMINGHWEI HONG journal article
4312002High $κ$ Gate Dielectrics For Si And Compound Semiconductors By Molecular Beam EpitaxyMINGHWEI HONG journal article
4322002Direct atomic structure determination of epitaxially grown films: Gd 2 O 3 on GaAs (100)MINGHWEI HONG journal article
4332002Single-crystal GaN/Gd2O3/GaN heterostructureMINGHWEI HONG journal article
4342002Advances in high & kappa gate dielectrics for Si and III-V semiconductorsMINGHWEI HONG conference paper
4352002Impact of metal/oxide interface on DC and RF performance of D-mode GaAs MOSFET employing MBE grown Ga/sub 2/O/sub 3/(Gd/sub 2/O/sub 3/) as gate dielectricMINGHWEI HONG conference paper
4362002Article comprising an oxide layer on a GaAs or GaN-based semiconductor bodyMINGHWEI HONG journal article
4372002GaN/Gd2O3/GaN Single Crystal HeterostructureMINGHWEI HONG journal article
4382002Papers presented at ECASIA'01-Microelectronics and Optoelectronics-Structure of Gd2O3 films epitaxially grown on GaAs (100) and GaN (0001) surfacesMINGHWEI HONG journal article
4392002Optical properties of gallium oxide thin filmsMINGHWEI HONG journal article143136
4402002Structure of Gd2O3 films epitaxially grown on GaAs (100) and GaN (0001) surfacesMINGHWEI HONG journal article
4412002DC and RF characteristics of depletion-mode GaAs MOSFET employing a thin Ga/sub 2/O/sub 3/(Gd/sub 2/O/sub 3/) gate dielectric layerMINGHWEI HONG conference paper
4422002Semiconductors II: Surfaces, interfaces, microstructures, and related topics-Direct atomic structure determination of epitaxially grown films: Gd2O3 on GaAs (100)MINGHWEI HONG journal article
4432002Impact of metal/oxide interface on DC and RF performance of D-mode GaAs MOSFET employing MBE grown Ga <inf>2</inf> O <inf>3</inf> (Gd <inf>2</inf> O <inf>3</inf> ) as gate dielectricYang, B.; Ye, P.D.; Kwo, J.; Frei, M.R.; Gossmann, H.-J.L.; Mannaerts, J.P.; Sergent, M.; Hong, M.; Ng, K.; Bude, J.; MINGHWEI HONG Conference Paper10
4442002Electrical characteristics of ultrathin Pt/Y<inf>2</inf>O<inf>3</inf>/Si capacitor with rapid post-metallisation annealingLay, T.S.; Liu, W.D.; Kwo, J.; Hong, M.; Mannaerts, J.P.; MINGHWEI HONG journal article00
4452002Single-crystal GaN/Gd<inf>2</inf>O<inf>3</inf>/GaN heterostructureHong, M.; Kwo, J.; Chu, S.N.G.; Mannaerts, J.P.; Kortan, A.R.; Ng, H.M.; Cho, A.Y.; Anselm, K.A.; Lee, C.M.; Chyi, J.I.; MINGHWEI HONG Conference Paper3339
4462002Structure of Gd<inf>2</inf>O<inf>3</inf> films epitaxially grown on GaAs(100) and GaN(0001) surfacesFl?ckiger, T.; Erbudak, M.; Hensch, A.; Weisskopf, Y.; Hong, M.; Kortan, A.R.; MINGHWEI HONG Conference Paper1717
4472001Properties of High kappa Gate Dielectrics Gd_2O_3, Y_2O_3, and yttria stabilized ZrO2 for SiMINGHWEI HONG conference paper
4482001Interface reactions of high-k Y2O3 gate oxides with SiMINGHWEI HONG journal article
4492001TransistorMINGHWEI HONG journal article
4502001Energy Offsets at Ga_2O_3 (Gd_2O_3)/GaAs and Ga_2O_3 (Gd_2O_3)/GaN interfacesMINGHWEI HONG conference paper
4512001CV and GV characterisation of Ga^ sub 2^ O^ sub 3^(Gd^ sup 2^ O^ sub 3^)/GaN capacitor with low interface state densityMINGHWEI HONG journal article
4522001CV and GV characterisation of Ga 2 O 3 (Gd 2 O 3)/GaN capacitor with low interface state densityMINGHWEI HONG journal article
4532001Structural studies of rare earth oxide Gd_2O3 film on GaAs (100) using secondary electron imagingMINGHWEI HONG conference paper
4542001HCP single crystal rare earth oxides on GaNMINGHWEI HONG conference paper
4552001New phase formation of Gd2O3 films on GaAs (100)MINGHWEI HONG journal article
4562001Structure of Gd_2O3 films on GaAs (100)MINGHWEI HONG conference paper
4572001Properties of high k gate dielectrics Gd2O3 and Y2O3 for SiMINGHWEI HONG journal article
4582001GaAs MOSFET-Materials Physics and DevicesMINGHWEI HONG conference paper
4592001Interfacial structure of epitaxial Gd_2O3 on GaAs (100) determined by novel analysis of Bragg rod measurementsMINGHWEI HONG conference paper
4602001Probing the microscopic compositions at Ga 2 O 3 (Gd 2 O 3)/GaAs interface by core level photoelectron spectroscopyMINGHWEI HONG journal article
4612001Energy-band parameters at the GaAs-and GaN-Ga 2 O 3 (Gd 2 O 3) interfacesMINGHWEI HONG journal article
4622001Properties of high 庥 gate dielectrics Gd<inf>2</inf>O<inf>3</inf> and Y<inf>2</inf>O<inf>3</inf> for SiKwo, J.; Hong, M.; Kortan, A.R.; Queeney, K.L.; Chabal, Y.J.; Opila, R.L.; Muller, D.A.; Chu, S.N.G.; Sapjeta, B.J.; Lay, T.S.; Mannaerts, J.P.; Boone, T.; Krautter, H.W.; Krajewski, J.J.; Sergnt, A.M.; Rosamilia, J.M.; MINGHWEI HONG journal article250235
4632001Probing the microscopic compositions at Ga<inf>2</inf>O<inf>3</inf>(Gd<inf>2</inf>O<inf>3</inf>)/GaAs interface by core level photoelectron spectroscopyLay, T.S.; Huang, K.H.; Hung, W.H.; Hong, M.; Kwo, J.; Mannaerts, J.P.; MINGHWEI HONG journal article11
4642001C-V and G-V characterisation of Ga<inf>2</inf>O<inf>3</inf>(Gd<inf>2</inf>O<inf>3</inf>)/GaN capacitor with low interface state densityLay, T.S.; Liu, W.D.; Hong, M.; Kwo, J.; Mannaerts, J.P.; MINGHWEI HONG journal article1213
4652001Energy-band parameters at the GaAs- and GaN-Ga<inf>2</inf>O<inf>3</inf>(Gd<inf>2</inf>O<inf>3</inf>) interfacesLay, T.S.; Hong, M.; Kwo, J.; Mannaerts, J.P.; Hung, W.H.; Huang, D.J.; MINGHWEI HONG journal article8078
4662001New phase formation of Gd<inf>2</inf>O<inf>3</inf>films on GaAs(100)Kortan, A.R.; Hong, M.; Kwo, J.; Mannaerts, J.P.; Krajewski, J.J.; Kopylov, N.; Steiner, C.; Bolliger, B.; Erbudak, M.; MINGHWEI HONG Conference Paper910
4672000in-V MOSFET Using Ga203/Gd203 As The Gate OxideMINGHWEI HONG journal article
4682000Single crystal rare earth oxides epitaxially grown on GaNMINGHWEI HONG conference paper
4692000STRUCTURAL, MECHANICAL, THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER-Extended x-ray absorption fine-structure measurement of bond-length strain in epitaxial Gd2O3 on GaAs (001)MINGHWEI HONG journal article
4702000Extended x-ray absorption fine-structure measurement of bond-length strain in epitaxial Gd̃ 2Õ 3 on GaAs (001)MINGHWEI HONG journal article
4712000[Morphological and ultrastructural observation of Blastocystis hominis]MINGHWEI HONG journal article
4722000RAPID COMMUNICATIONS-Semiconductors II: Surfaces, interfaces, microstructures, and related topics-Structural modifications of the Gd2O3 (110) films on GaAs (100)MINGHWEI HONG journal article
4732000Characteristics of Ga2O3 (Gd2O3)/GaAs interface: Structures and compositionsMINGHWEI HONG journal article
4742000Insulator/GaN Heterostructures of Low Interfacial Density of StatesMINGHWEI HONG journal article
4752000Papers from the 18th North American Conference on Molecular Beam Epitaxy-Novel Materials I-Characteristics of Ga2O3 (Gd2O3)/GaAs interface: Structures and compositionsMINGHWEI HONG journal article
4762000Papers from the 18th North American Conference on Molecular Beam Epitaxy-Nitrides by MBE-Properties of Ga2O3 (Gd2O3)/GaN metal-insulator-semiconductor diodesMINGHWEI HONG journal article
4772000New High $ɛ$ Gate Dielectrics Gd_2O3 and Y_2O3 for SiMINGHWEI HONG conference paper
4782000First demonstration of GaAs CMOSMINGHWEI HONG journal article14
4792000GaN electronics for high power, high temperature applicationsMINGHWEI HONG journal article
4802000Neutron scattering on magnetic thin films: pushing the limitsMINGHWEI HONG journal article
4812000A comparison of gallium gadolinium oxide and gadolinium oxide for use as dielectrics in GaN MOSFETsMINGHWEI HONG conference paper5
4822000High E gate dielectrics Gd2O3 and Y2O3 for siliconMINGHWEI HONG journal article
4832000Structural modifications of the Gd 2 O 3 (110) films on GaAs (100)MINGHWEI HONG journal article
4842000Properties of Ga2O3 (Gd2O3)/GaN metal-insulator-semiconductor diodesMINGHWEI HONG journal article
4852000GaAs MOSFET-Achievements and Challenges M. Hong, YC Wang, F. Ren (,), JP Mannaerts, J. Kwo, AR Kortan, JN Baillargeon, and AY Cho Bell Laboratories, Lucent Technologies, Murray Hill, NJMINGHWEI HONG journal article
4862000Initial growth of Gã 2Õ 3 (Gd̃ 2Õ 3) on GaAs: Key to the attainment of a low interfacial density of statesMINGHWEI HONG journal article
4872000Structure of epitaxial Gd2O3 films and their registry on GaAs (100) substratesMINGHWEI HONG journal article
4882000Properties of Ga<inf>2</inf>O<inf>3</inf>(Gd<inf>2</inf>O<inf>3</inf>)/GaN metal-insulator-semiconductor diodesHong, M.; Anselm, K.A.; Kwo, J.; Ng, H.M.; Baillargeon, J.N.; Kortan, A.R.; Mannaerts, J.P.; Cho, A.Y.; Lee, C.M.; Chyi, J.I.; Lay, T.S.; MINGHWEI HONG journal article6159
4892000Initial growth of Ga <inf>2</inf> O <inf>3</inf> (Gd <inf>2</inf> O <inf>3</inf> ) on GaAs: Key to the attainment of a low interfacial density of statesHong, M.; Lu, Z.H.; Kwo, J.; Kortan, A.R.; Mannaerts, J.P.; Krajewski, J.J.; Hsieh, K.C.; Chou, L.J.; Cheng, K.Y.; MINGHWEI HONG journal article77
4902000Characteristics of Ga<inf>2</inf>O<inf>3</inf>(Gd<inf>2</inf>O<inf>3</inf>)/GaAs interface: Structures and compositionsHong, M.; Kortan, A.R.; Kwo, J.; Mannaerts, J.P.; Krajewski, J.J.; Lu, Z.H.; Hsieh, K.C.; Cheng, K.Y.; MINGHWEI HONG journal article15
4912000High 庰 gate dielectrics Gd<inf>2</inf>O<inf>3</inf>and Y<inf>2</inf>O<inf>3</inf>for siliconKwo, J.; Hong, M.; Kortan, A.R.; Queeney, K.T.; Chabal, Y.J.; Mannaerts, J.P.; Boone, T.; Krajewski, J.J.; Sergent, A.M.; Rosamilia, J.M.; MINGHWEI HONG journal article245
4922000Extended x-ray absorption fine-structure measurement of bond-length strain in epitaxial Gd<inf>2</inf>O<inf>3</inf> on GaAs(001)Nelson, E.J.; Woicik, J.C.; Hong, M.; Kwo, J.; Mannaerts, J.P.; MINGHWEI HONG journal article11
4932000Structure of epitaxial Gd<inf>2</inf>O<inf>3</inf> films and their registry on GaAs(100) substratesBolliger, B.; Erbudak, M.; Hong, M.; Kwo, J.; Kortan, A.R.; Mannaerts, J.P.; MINGHWEI HONG journal article8
4942000Structural modifications of the Gd<inf>2</inf>O<inf>3</inf>(110) films on GaAs(100)Steiner, C.; Bolliger, B.; Erbudak, M.; Hong, M.; Kortan, A.R.; Kwo, J.; Mannaerts, J.P.; MINGHWEI HONG journal article102
4951999Energy Band Offsets at a Ga 2 O 3 (Gd 2 O 3)-GaAs InterfaceMINGHWEI HONG journal article
4961999Observation of Brillouin-zone folded magnon dispersion curves in magnetic superlattices by inelastic neutron scatteringMINGHWEI HONG book-chapter
4971999The (Ga 2 O 3) 1- x (Gd 2 O 3) x, Oxides with x= 0-1.0 for GaAs PassivationMINGHWEI HONG journal article
4981999Structure of Single-Crystal Gd 2 O 3 Films on GaAs (100)MINGHWEI HONG journal article
4991999Passivation of GaAs using gallium-gadolinium oxidesMINGHWEI HONG journal article
5001999Passivation of GaAs using „Ga2O3…„Gd2O3… x, 0 x 1.0 filmsMINGHWEI HONG journal article
5011999Article comprising an oxide layer on a GaAs-based semiconductor bodyMINGHWEI HONG journal article
5021999Semiconductor-insulator interfacesMINGHWEI HONG journal article
5031999Ga 2 O 3 (Gd 2 O 3)/GaAs power MOSFETsMINGHWEI HONG journal article
5041999Demonstration of submicron depletion-mode GaAs MOSFETs with negligible drain current drift and hysteresisMINGHWEI HONG journal article
5051999Advances in GaAs Mosfet's Using Ga 2 O 3 (Gd 2 O 3) as Gate OxideMINGHWEI HONG journal article
5061999Structure of epitaxial Gd 2 O 3 films grown on GaAs (100)MINGHWEI HONG journal article
5071999Temperature dependence of photoluminescence on molecular-beam-epitaxy grown Ga2O3 (Gd2O3)/GaAsMINGHWEI HONG journal article
5081999Papers from the 17th North American Conference on Molecular Beam Epitaxy-Growth of Novel Materials and Structures-Passivation of GaAs using gallium-gadolinium oxidesMINGHWEI HONG journal article
5091999STRUCTURAL, MECHANICAL, THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER-Temperature dependence of photoluminescence on molecular-beam-epitaxy grown Ga2O3 (Gd2O3)/GaAsMINGHWEI HONG journal article
5101999Article comprising an oxide layer on GANMINGHWEI HONG journal article
5111999Gallium-gadolinium oxide gate oxide etch stop layerMINGHWEI HONG journal article
5121999Epitaxial cubic gadolinium oxide as a dielectric for gallium arsenide passivationMINGHWEI HONG journal article372366
5131999GaN metal oxide semiconductor field effect transistorsMINGHWEI HONG journal article70
5141999Passivation of GaAs using (Ga<inf>2</inf>O<inf>3</inf>)<inf>1 - x</inf>(Gd<inf>2</inf>O<inf>3</inf>)<inf>x</inf>, 0?x?1.0 filmsKwo, J.; Murphy, D.W.; Hong, M.; Opila, R.L.; Mannaerts, J.P.; Sergent, A.M.; Masaitis, R.L.; MINGHWEI HONG journal article7477
5151999Demonstration of submicron depletion-mode GaAs MOSFET's with negligible drain current drift and hysteresisWang, Y.C.; Hong, M.; Kuo, J.M.; Mannaerts, J.P.; Kwo, J.; Tsai, H.S.; Krajewski, J.J.; Chen, Y.K.; Cho, A.Y.; MINGHWEI HONG journal article5855
5161999Ga <inf>2</inf> O <inf>3</inf> (Gd <inf>2</inf> O <inf>3</inf> )/GaAs power MOSFETsWang, Y.C.; Hong, M.; Kuo, J.M.; Mannaerts, J.P.; Tsai, H.S.; Kwo, J.; Krajewski, J.J.; Chen, Y.K.; Cho, A.Y.; MINGHWEI HONG journal article1617
5171999GaN metal oxide semiconductor field effect transistorsRen, F.; Pearton, S.J.; Abernathy, C.R.; Baca, A.; Cheng, P.; Shul, R.J.; Chu, S.N.G.; Hong, M.; Schurman, M.J.; Lothian, J.R.; MINGHWEI HONG other70
5181998Effect of Temperature on GaGdO/GaN Metal Oxide Semiconductor Field Effect Transistors; Applied Physics LettersMINGHWEI HONG journal article
5191998Article comprising a gallium layer on a GaAs-based semiconductor, and method of making the articleMINGHWEI HONG journal article
5201998Demonstration of GaN MIS diodes by using AlN and Ga 2 O 3 (Gd 2 O 3) as dielectricsMINGHWEI HONG journal article
5211998Ga2O3 (Gd2O3) as a gate dielectric for GaAs MOSFETsMINGHWEI HONG journal article
5221998GaAs MOSFETs using Ga 2 O 3 (Gd 2 O 3) as gate dielectricMINGHWEI HONG conference paper
5231998Depletion-mode GaAs MOSFETs with negligible drain current drift and hysteresisMINGHWEI HONG journal article10
5241998Insulator passivation of In 0.2 Ga 0.8 As-GaAs surface quantum wellsMINGHWEI HONG journal article
5251998NaCl: OH- color center laser modelocked by a novel bonded saturable Bragg reflectorMINGHWEI HONG journal article
5261998Ga2O3 (Gd2O3) as a dielectric insulator for GaAs device applicationsMINGHWEI HONG conference paper
5271998Single Crystal Gd 2 0 3 Films Epitaxially Grown on GaAs-A New Dielectric for GaAs PassivationMINGHWEI HONG journal article
5281998Effect of Temperature on GaGdO/GaN Metal Oxide Semiconductor Field Effect TransistorsMINGHWEI HONG report
5291998GaAs MOSFET using MBE-grown Ga 2 O 3 (Gd 2 O 3) as gate oxideMINGHWEI HONG journal article
5301998Structural properties of Ga2O3 (Gd2O3)-GaAs interfacesMINGHWEI HONG journal article
5311998Ga 2 O 3 (Gd 2 O 3)/InGaAs enhancement-mode n-channel MOSFETsMINGHWEI HONG journal article
5321998Effect of temperature on Ga2O3 (Gd2O3)/GaN metal-oxide-semiconductor field-effect transistorsMINGHWEI HONG journal article
5331998Depletion mode GaAs metal-oxide-semiconductor field effect transistors with Ga2O3 (Gd2O3) as the gate oxideMINGHWEI HONG journal article
5341998Oxide-GaAs interfacial electronic properties characterized by modulation spectroscopy of photoreflectanceMINGHWEI HONG journal article66
5351998Metal Contact On Nitride Based MaterialsMINGHWEI HONG journal article
5361998Effect of temperature on Ga<inf>2</inf>O<inf>3</inf>(Gd<inf>2</inf>O<inf>3</inf>)/GaN metal-oxide-semiconductor field-effect transistorsRen, F.; Hong, M.; Chu, S.N.G.; Marcus, M.A.; Schurman, M.J.; Baca, A.; Pearton, S.J.; Abernathy, C.R.; MINGHWEI HONG journal article208195
5371998Ga <inf>2</inf> O <inf>3</inf> (Gd <inf>2</inf> O <inf>3</inf> ) as a dielectric insulator for GaAs device applicationsLay, T.S.; Hong, M.; Mannaerts, J.P.; Liu, C.T.; Kwo, J.; Ren, F.; Marcus, M.A.; Ng, K.K.; Chen, Y.K.; Chou, L.J.; Hsieh, K.C.; Cheng, K.Y.; MINGHWEI HONG Conference Paper00
5381998Insulator passivation of Ino <inf>0.2</inf>Ga <inf>0.8</inf>As-GaAs surface quantum wellsPasslack, M.; Hong, M.; Harris, T.D.; Mannaerts, J.P.; Vakhshoori, D.; Schnoes, M.L.; MINGHWEI HONG journal article22
5391998GaAs MOSFET using MBE-grown Ga <inf>2</inf> O <inf>3</inf> (Gd <inf>2</inf> O <inf>3</inf> ) as gate oxideKim, S.-J.; Park, J.-W.; Hong, M.; Mannaerts, J.P.; MINGHWEI HONG journal article55
5401997Wet chemical and plasma etching of Ga<inf>2</inf>O<inf>3</inf>(Gd<inf>2</inf>O<inf>3</inf>)Ren, F.; Hong, M.; Mannaerts, J.P.; Lothian, J.R.; Cho, A.Y.; MINGHWEI HONG journal article2020
5411997Demonstration of enhancement-mode p- and n-channel GaAs MOSFETs with Ga<inf>2</inf>O<inf>3</inf>(Gd<inf>2</inf>O<inf>3</inf>) as gate oxideRen, F.; Hong, M.; Hobson, W.S.; Kuo, J.M.; Lothian, J.R.; Mannaerts, J.P.; Kwo, J.; Chu, S.N.G.; Chen, Y.K.; Cho, A.Y.; MINGHWEI HONG journal article156149
5421997Novel Ga <inf>2</inf> O <inf>3</inf> (Gd <inf>2</inf> O <inf>3</inf> ) passivation techniques to produce low D <inf>it</inf> oxide-GaAs interfacesHong, M.; Mannaerts, J.P.; Bower, J.E.; Kwo, J.; Passlack, M.; Hwang, W.-Y.; Tu, L.W.; MINGHWEI HONG journal article7167
5431997Novel Ga 2 O 3 (Ga 2 O 3) passivation techniques to produce low D it oxide-GaAs interfacesMINGHWEI HONG journal article
5441997Advancing metal-oxide-semiconductor theory: Steady-state nonequilibrium conditionsMINGHWEI HONG journal article
5451997In-situ Cleaving and Coating of Semiconductor Laser FacetsMINGHWEI HONG conference paper
5461997A Ga 2 O 3 passivation technique compatible with GaAs device processingMINGHWEI HONG journal article
5471997Low D it, thermodynamically stable Ga 2 O 3-GaAs interfaces: fabrication, characterization, and modelingMINGHWEI HONG journal article
5481997Ga2O3/GaAs depletion mode MOSFETMINGHWEI HONG journal article
5491997Characterization of the interfacial electronic properties of oxide films on GaAs fabricated by in-situ molecular beam epitaxyMINGHWEI HONG conference paper
5501997DEMONSTRATION OF ENHANCEMENT-MODE p-CHANNEL GaAs MOSFETs WITH Ga 2 O 3 (Gd 2 O 3) PASSIVATIONMINGHWEI HONG journal article
5511997Growth of Ga 2 O 3 (Gd 2 O 3) using molecular beam epitaxy technique-key to first demonstration of GaAs MOSFETsMINGHWEI HONG conference paper
5521997III-V compound semiconductor MOSFETs using Ga/sub 2/O/sub 3/(Gd/sub 2/O/sub 3/) as gate dielectricMINGHWEI HONG conference paper
5531997Dielectrics for GaN based MIS-diodesMINGHWEI HONG journal article5
5541997Demonstration of Ga/sub 2/O/sub 3/(Gd/sub 2/O/sub 3/)/InGaAs enhancement-mode n-channel MOSFETsMINGHWEI HONG conference paper
5551997Wet Chemical and Plasma Etching of Ga2 O 3 (Gd2 O 3)MINGHWEI HONG journal article
5561997Surface-micromachined tunable resonant cavity LED using wafer bondingMINGHWEI HONG conference paper
5571997Long-wavelength resonant vertical-cavity LED/photodetector with a 75-nm tuning rangeMINGHWEI HONG journal article
5581997Demonstration of enhancement-mode p-and n-channel GaAs MOSFETS with Ga 2 O 3 (Gd 2 O 3) As gate oxideMINGHWEI HONG journal article
5591996Enhancement-mode p-channel GaAs MOSFETs on semi-insulating substratesMINGHWEI HONG journal article
5601996Recombination velocity at oxide-GaAs interfaces fabricated by in situ molecular beam epitaxyMINGHWEI HONG journal article5552
5611996Observation of inversion layers at Ga 2 O 3-GaAs interfaces fabricated by in-situ molecular-beam epitaxyMINGHWEI HONG journal article
5621996Low interface state density oxide-GaAs structures fabricated by insitu molecular beam epitaxyMINGHWEI HONG journal article
5631996Vertical cavity semiconductor laserMINGHWEI HONG journal article
5641996GaAs surface passivation using in-situ oxide depositionMINGHWEI HONG journal article1513
5651996In-vacuum cleaving and coating of semiconductor laser facets using thin silicon and a dielectricMINGHWEI HONG journal article
5661996Low interface state density oxide-GaAs structures fabricated by in-situ molecular beam epitaxyMINGHWEI HONG journal article5
5671996Reliability studies of wafer-bonded InGaAs PIN photodetectors on GaAs substratesMINGHWEI HONG conference paper
5681996C-V and G-V characterization of in-situ fabricated Ga 2 O 3 GaAs interfaces for inversion/accumulation device and surface passivation applicationsMINGHWEI HONG journal article
5691996Thermodynamic and photochemical stability of low interface state density Ga2O3-GaAs structures fabricated by insitu molecular beam epitaxyMINGHWEI HONG journal article
5701996WDM transmitters using wavelength-tunable vertical-cavity lasers and resonant-cavity detectorsMINGHWEI HONG conference paper
5711996Strain relaxation in Fe3 (Al, Si)/GaAs: An x-ray scattering studyMINGHWEI HONG journal article
5721996Quasistatic and high frequency capacitance-voltage characterization of Ga2O3-GaAs structures fabricated by insitu molecular beam epitaxyMINGHWEI HONG journal article
5731996Coupled in-plane and vertical-cavity laser 1 x N routing switchesMINGHWEI HONG journal article
5741996Tunable long wavelength LED using wafer bonding and micromachining technologiesMINGHWEI HONG conference paper
5751996C-V and G-V characterization of in-situ fabricated Ga<inf>2</inf>O<inf>3</inf>-GaAs interfaces for inversion/accumulation device and surface passivation applicationsPasslack, M.; Hong, M.; Mannaerts, J.P.; MINGHWEI HONG other3334
5761996Thermodynamic and photochemical stability of low interface state density Ga<inf>2</inf>O<inf>3</inf>-GaAs structures fabricated by in situ molecular beam epitaxyPasslack, M.; Hong, M.; Mannaerts, J.P.; Opila, R.L.; Ren, F.; MINGHWEI HONG journal article2527
5771996Quasistatic and high frequency capacitance-voltage characterization of Ga2O3-GaAs structures fabricated by in situ molecular beam epitaxyPasslack, M.; Hong, M.; Mannaerts, J.P.; MINGHWEI HONG journal article179202
5781996Observation of inversion layers at GA<inf>2</inf>O<inf>3</inf>-GaAs interfaces fabricated by in-situ molecular-beam epitaxyPasslack, M.; Hong, M.; Mannaerts, J.P.; MINGHWEI HONG journal article22
5791995RECORD LOW-RESISTANCE VERTICAL-CAVITY SURFACE-EMITTING LASERS GROWN BY MOLECULAR-BEAM EPITAXY USING HYBRID MIRROR APPROACHMINGHWEI HONG journal article
5801995Low resistivity vertical-cavity surface emitting lasers grown by molecular-beam epitaxy using sinusoidal-composition grading in mirrors and insitu nonalloyed ohmic contactsMINGHWEI HONG journal article
5811995GA2O3 FILMS FOR INSULATOR/III-V SEMICONDUCTOR INTERFACESMINGHWEI HONG journal article
5821995Room temperature optical absorption characteristics of GaAs/AlGaAs multiple quantum well structures under external anisotropic strainMINGHWEI HONG journal article
5831995Enhancement in excitonic absorption for GaAs/AlGaAs multiple-quantum-well structures under external anisotropic strainMINGHWEI HONG conference paper
5841995In-situ Ga 2 O 3 process for GaAs inversion/accumulation device and surface passivation applicationsMINGHWEI HONG conference paper
5851995Capacitance-voltage and current-voltage characterization of AlxGa1- xAs-GaAs structuresMINGHWEI HONG journal article
5861995Ga203 films for electronic and optoelectronic apMINGHWEI HONG journal article
5871995Erratum:‘‘Room temperature optical absorption characteristics of GaAs/AlGaAs multiple quantum well structure under external anisotropic strain’’[Appl. Phys. Lett. 66, 736 (1995)]MINGHWEI HONG journal article
5881995Demonstration of an isolated buried channel field-effect transistor fabricated via in situ patterned electron-beam deposition of Si in GaAsMINGHWEI HONG journal article
5891995Coherent oscillations in semiconductor microcavitiesMINGHWEI HONG journal article
5901995New frontiers of molecular beam epitaxy with in-situ processingMINGHWEI HONG journal article
5911995Ga2O3 films for electronic and optoelectronic applicationsMINGHWEI HONG journal article
5921995In situ fabricated Ga2O3-GaAs structures with low interface recombination velocityMINGHWEI HONG journal article
5931995Long wavelength VCSELs using AlAs/GaAs mirrors and strain-compensated quantum wellsMINGHWEI HONG conference paper
5941995X-ray-scattering studies of the interfacial structure of Au/GaAsMINGHWEI HONG journal article
5951995Low-threshold 1.57-$μ$m VC-SEL's using strain-compensated quantum wells and oxide/metal backmirrorMINGHWEI HONG journal article
5961995High-performance InGaAs photodetectors on Si and GaAs substratesMINGHWEI HONG journal article
5971994Interfacial characteristics of AlGaAs after insitu electron cyclotron resonance plasma etching and molecular beam epitaxial regrowthMINGHWEI HONG journal article
5981994Properties of Al2O3 optical coatings on GaAs produced by oxidation of epitaxial AlAs/GaAs filmsMINGHWEI HONG journal article
5991994980 nm and 850 nm zone lasersMINGHWEI HONG conference paper
6001994Dielectrically-bonded long wavelength vertical cavity laser on GaAs substrates using strain-compensated multiple quantum wellsMINGHWEI HONG journal article
601199440-mW focused light spot from zone laser and parameters affecting its performanceMINGHWEI HONG conference paper
6021994Process for removing surface contaminants from III-V semiconductorsMINGHWEI HONG journal article
6031994Interface analysis of dry etched and molecular beam epitaxial regrown AlGaAsMINGHWEI HONG journal article
6041994Temperature dependence of resonant x-ray magnetic scattering in holmiumMINGHWEI HONG journal article
6051994Zone lasersMINGHWEI HONG journal article
6061994AlGaAs Surface Reconstruction after Cl 2 Chemical Etch and Ultra High Vacuum AnnealMINGHWEI HONG journal article
6071994ETCH Rate and Thickness Measurements of Layered GaAs, AlAs and AlGaAs Structures Using a Laser Reflectance TechniqueMINGHWEI HONG journal article
6081994Long wavelength vertical cavity laser using strain-compensated multiple quantum wells on GaAs substratesMINGHWEI HONG conference paper
6091994Buried heterostructure laser diodes fabricated using in situ processingMINGHWEI HONG journal article
6101994In-situ process for AlGaAs compound semiconductor: Materials science and device fabricationMINGHWEI HONG journal article
6111994Dielectric properties of electron-beam deposited Ga2O3 filmsMINGHWEI HONG journal article
6121994Low pressure etching outer stack and peripheral active layer; epitaxial regrowth of lower refractive index materialMINGHWEI HONG journal article
6131994In situ nonalloyed ohmic contacts to p-GaAsMINGHWEI HONG journal article
6141994Low-Resistivity Non-Alloyed Ohmic Contacts to p-and n-Gaas Using In-Situ Integrated ProcessMINGHWEI HONG journal article
6151993Design optimization for high power and high speed surface-emitting lasersMINGHWEI HONG conference paper
6161993Buried AlGaAs/GaAs/InGaAs laser diodes fabricated by in-situ anisotropic etching and molecular beam epitaxyMINGHWEI HONG conference paper
6171993Vertical-cavity surface-emitting laser diodes fabricated by in situ dry etching and molecular beam epitaxial regrowthMINGHWEI HONG journal article
6181993Method of making an article comprising a periodic heteroepitaxial semiconductor structureMINGHWEI HONG journal article
6191993Vacuum Integrated Fabrication of Buried Heterostructure Edge Emitting Laser DiodesMINGHWEI HONG journal article
6201993Semiconductor surface emitting laser having enhanced optical confinementMINGHWEI HONG journal article
6211993Low resistance and large current range CW single-mode top surface-emitting laser with small windowMINGHWEI HONG journal article00
6221993Hydrogen plasma processing of GaAs and AlGaAsMINGHWEI HONG journal article
6231993Buried heterostructure surface emitting laser diodes fabricated using integrated vacuum processingMINGHWEI HONG conference paper
6241993Relative intensity noise of vertical cavity surface emitting lasersMINGHWEI HONG journal article
6251993980 nm zone lasers [InGaAs quantum wells]MINGHWEI HONG conference paper
6261993Vacuum integrated fabrication of vertical-cavity surface emitting lasersMINGHWEI HONG journal article
6271993Ultralow timing jitter in electrically gain-switched vertical cavity surface emitting lasersMINGHWEI HONG journal article
6281993Single mode, edge-emittingMINGHWEI HONG journal article
6291993Magnetic properties of epitaxial single crystal ultrathin Fe3Si films on GaAs (001)MINGHWEI HONG journal article
6301993GaAs surface reconstruction obtained using a dry processMINGHWEI HONG journal article
6311993980nm Zone LasersMINGHWEI HONG journal article
6321993Hydrogen plasma removal of AlGaAs oxides before molecular beam epitaxyMINGHWEI HONG journal article
6331993Removal of GaAs surface contaminants using H2 electron cyclotron resonance plasma treatment followed by Cl2 chemical etchingMINGHWEI HONG journal article
6341992Modulation characteristics of GaAs surface-emitting lasers with bulk active regionsMINGHWEI HONG conference paper
6351992Magnetic Properties of Epitaxial Single Crystal Ultrathin Fe sub 3 Si Films on GaAs(001)MINGHWEI HONG journal article
6361992Temperature modulation molecular-beam epitaxy and its application to the growth of periodic index separate confinement heterostructure InGaAs quantum-well lasersMINGHWEI HONG journal article
6371992Structural considerations in the optimal design of surface-emitting laser diodesMINGHWEI HONG journal article
6381992Large dynamic range CW single mode top surface-emitting laser with small windowMINGHWEI HONG conference paper
6391992Periodic index separate confinement heterostructure InGaAs/AlGaAs quantum well lasers grown by temperature modulation molecular beam epitaxyMINGHWEI HONG journal article
6401992An investigation of molecular beam epitaxy “in-situ” grown Ag/GaAs schottky diodesMINGHWEI HONG journal article
6411992Study of AuAgFe/AlGaAs Schottky diodes fabricated byin situ molecular beam epitaxyMINGHWEI HONG journal article
6421992MBE growth and characteristics of periodic index separate confinement heterostructure InGaAs quantum-well lasersMINGHWEI HONG journal article
6431992Ultrafast (up to 39 GHz) relaxation oscillation of vertical cavity surface emitting laserMINGHWEI HONG journal article
6441992Molecular beam epitaxial regrowth on insitu plasma-etched AlAs/AlGaAs heterostructuresMINGHWEI HONG journal article
6451992TRANSMISSION ELECTRON-MICROSCOPY STUDY OF INTERMETALLIC COMPOUND FE3ALXSI1-X EPITAXIALLY GROWN ON GAASMINGHWEI HONG journal article
6461992In situ deposition of Au on plasma-prepared GaAs substratesMINGHWEI HONG journal article
6471992Vertical microcavity surface-emitting ring laserMINGHWEI HONG journal article
6481992Study of ultrafast dynamics of a vertical-cavity surface-emitting laser by electrical gain switchingMINGHWEI HONG conference paper
6491992Apparatus comprising a laser adapted for emission of single mode radiation having low transverse divergenceMINGHWEI HONG journal article
6501992Vertical-cavity surface-emitting lasers fabricated by vacuum integrated processingMINGHWEI HONG journal article
6511991Short pulse generation by electrical gain switching of vertical cavity surface emitting laserMINGHWEI HONG journal article
6521991In situ growth and properties of single-crystalline-like La 2-x Sr x CuO 4 epitaxial films by off-axis sputtering (US)MINGHWEI HONG journal article
6531991GaAs/AlxGa1- xAs quantum well infra-red photodetectors with cutoff wavelength $λ$c= 14.9 $μ$mMINGHWEI HONG journal article
6541991Electron cyclotron resonance plasma preparation of GaAs substrates for molecular beam epitaxyMINGHWEI HONG journal article
6551991Magnetic rare earth superlatticesMINGHWEI HONG journal article
6561991Blue/green surface-emitting second-harmonic generators on< 111> GaAs substrateMINGHWEI HONG conference paper
6571991Vertical cavity top-surface emitting lasers with thin Ag mirrors and hybrid reflectorsMINGHWEI HONG journal article
6581991Interaction of energetic ions with inhomogeneous solidsMINGHWEI HONG journal article
6591991Blue-green surface-emitting second-harmonic generators on (111) B GaAsMINGHWEI HONG journal article
6601991MBE growth and properties of Fe 3 (Al, Si) on GaAs (100)MINGHWEI HONG journal article
6611991Transverse distributed Bragg reflector quantum-well lasersMINGHWEI HONG conference paper
6621991Doping and free-carrier loss in cw all-epitaxial surface-emitting laser diodesMINGHWEI HONG conference paper
6631991Reduced current thresholds in GaAs/AlGaAs vertical cavity surface emitting lasers using 4° off-oriented (001) GaAs substratesMINGHWEI HONG journal article
6641991A periodic index separate confinement heterostructure quantum well laserMINGHWEI HONG journal article
6651991Infrared intersubband photoinduced charge polarization in asymmetrical quantum wellsMINGHWEI HONG journal article
6661991Insitu growth and properties of single-crystalline-like La2- xSrxCuO4 epitaxial films by off-axis sputteringMINGHWEI HONG journal article
6671991A simple way to reduce series resistance in p-doped semiconductor distributed Bragg reflectorsMINGHWEI HONG journal article
6681990Continuous wave top surface emitting quantum well lasers using hybrid metal/semiconductor reflectorsMINGHWEI HONG journal article
6691990Vertical-cavity surface-emitting lasers with semitransparent metallic mirrors and high quantum efficienciesMINGHWEI HONG journal article
6701990Observations of quasi-particle tunneling and Josephson behavior in Y sub 1 Ba sub 2 Cu sub 3 O sub 7 minus x/native barrier/Pb thin-film junctionsMINGHWEI HONG journal article
6711990Materials and Tunneling Characteristics of HTSC Y1Ba2Cu3O7-x Thin Films by Molecular Beam EpitaxyMINGHWEI HONG conference paper
6721990Vertical cavity surface emitting laser diodesMINGHWEI HONG conference paper
6731990Array operation of GaAs/AlGaAs vertical cavity surface emitting lasersMINGHWEI HONG conference paper
6741990Observations of quasi-particle tunneling and Josephson behavior in Y1Ba2Cu3O7- x/native barrier/Pb thin-film junctionsMINGHWEI HONG journal article
6751990Use of hybrid reflectors to achieve low thresholds in all molecular-beam epitaxy grown vertical cavity surface emitting laser diodesMINGHWEI HONG journal article
6761990GaAs/AlGaAs multiple quantum well GRIN-SCH vertical cavity surface emitting laser diodesMINGHWEI HONG journal article
6771990Magnetic properties of Gd/Dy superlattices: Experiment and theoryMINGHWEI HONG journal article
6781989Superconducting Bi-Sr-Ca-Cu-O films by sputtering using a single oxide targetMINGHWEI HONG conference paper
6791989Growth of 200 Å superconducting Bi-Sr-Ca-Cu oxide thin filmsMINGHWEI HONG journal article
6801989Tl-Based Superconducting Films by Sputtering Using a Single TargetMINGHWEI HONG book-chapter
6811989Physical processing effects on polycrystalline YBa 2 Cu 3 O/sub xMINGHWEI HONG journal article
6821989Rf-diode sputtered amorphous rare earth-transition metal films: Microstructure, stability, and magneto-optical propertiesMINGHWEI HONG journal article
6831989Electrical response of superconducting YBa 2 Cu 3 O/sub 7-//sub $δ$/to lightMINGHWEI HONG journal article
6841989Far-infrared transmission of Bi 2 Sr 2 CaCu 2 O 8 filmsMINGHWEI HONG journal article
6851989Superlattice modulation and epitaxy of Tl2Ba2Ca2Cu3O10 thin films grown on MgO and SrTiO3 substratesMINGHWEI HONG journal article
6861989Properties of superconducting Tl 2 Ba 2 Ca 2 Cu 3 O 10 films by sputteringMINGHWEI HONG journal article
6871989In-situ growth of Y 1 Ba 2 Cu 3 O 7-x films by molecular beam epitay with an activated oxygen sourceMINGHWEI HONG book-chapter
6881989Materials and tunneling characteristics of HTSC Y sub (1) Ba sub (2) Cu sub (3) O sub (7-x) thin films by molecular beam epitaxy.MINGHWEI HONG journal article
6891989In-situ growth of Y 1 Ba 2 Cu 3 O 7-x films by molecular beam epitaxy with an activated oxygen sourceMINGHWEI HONG journal article
6901989Electrical response of superconducting YBa2Cu3O7- $δ$ to lightMINGHWEI HONG journal article
6911989Diffraction studies of rare earth metals and superlatticesMINGHWEI HONG journal article
6921989In situ formation of YBa 2 Cu 3 O/sub x/thin films by physical sputteringMINGHWEI HONG journal article
6931989Properties of in-Situ Superconducting Y1Ba2Cu3O7-x Films by Molecular Beam Epitaxy with an Activated Oxygen SourceMINGHWEI HONG book-chapter
6941989SINGLE-PHASE HIGH Tc SUPERCONDUCTINGMINGHWEI HONG journal article
6951989Single-phase high Tc superconducting Tl2Ba2Ca2Cu3O1 0 filmsMINGHWEI HONG conference paper
6961989PHYSICAL PROCESSING EFFECTS ON POLYCRYSTALLINE YBa 2 Cu 3 OxMINGHWEI HONG journal article
6971989Use of hybrid reflectors to achieve low thresholds in all MBE grown vertical cavity surface emitting laser diodesMINGHWEI HONG conference paper
6981989Far-infrared transmission of Bi sub 2 Sr sub 2 CaCu sub 2 O sub 8 filmsMINGHWEI HONG journal article
6991989Insitu formation of YBa2Cu3Ox thin films by physical sputteringMINGHWEI HONG journal article
7001989Direct Observation of Intermixing in GAAS/AIAS Multilayers After Very Low-Dose Ion-ImplantationMINGHWEI HONG journal article
7011989Cu valence and the formation of high Tc superconductor oxides studied by x-ray photoemission spectroscopy on 200 Å Bi-Sr-Ca-Cu oxide thin filmsMINGHWEI HONG journal article
7021988Observation of a halide (F/Cl) stabilized, new perovskite phase in superconducting Y 2 Ba 5 Cu 7 O/sub x/filmsMINGHWEI HONG journal article
7031988Oxygen defect in YBa 2 Cu 3 O/sub x: An x-ray photoemission approachMINGHWEI HONG journal article
7041988High T c superconducting Y-Ba-Cu-O oxide films by sputtering and molecular beam epitaxy: Morphology, structural characterization and superconducting propertiesMINGHWEI HONG conference paper
7051988Magnetic superlatticesMINGHWEI HONG journal article
7061988CW laser etching of Ba2YCu3O7 filmsMINGHWEI HONG conference paper
7071988Preparation Of High Tc And Jc Films Of Ba2YCu3O7_8 By Laser Evaporation And Observation Of Superconductivity In A 27Å PhaseMINGHWEI HONG conference paper
7081988Electronic excitations of the YBa 2 Cu 3 O 7√/sub x/superconductor: A study by transmission electron-energy-loss spectroscopy with an electron microprobeMINGHWEI HONG journal article
7091988Electronic excitations of the YBa/sub 2/Cu/sub 3/O/sub 7/. sqrt./sub x/superconductor: A study by transmission electron-energy-loss spectroscopy with an electron microprobeMINGHWEI HONG journal article
7101988High T/sub c/superconducting Y-Ba-Cu-O oxide films by sputtering and molecular beam epitaxy: Morphology, structural characterization and superconducting propertiesMINGHWEI HONG journal article
7111988Superconducting properties of a 27-A phase of Ba-Y-Cu-OMINGHWEI HONG journal article
7121988High critical current superconducting Bi-Sr-Ca-Cu-O films by sputteringMINGHWEI HONG journal article
7131988Single-Phase High T sub c Superconducting Tl sub 2 Ba sub 2 Ca sub 2 Cu sub 3 O sub 10 FilmsMINGHWEI HONG journal article
7141988Metallic Multilayers and Epitaxy: Proceedings of a Symposium..., Held at the Annual Meeting of the Metallurgical Society in Denver, Colorado, February 24-25, 1987MINGHWEI HONG book
7151988Tl-Ba-Ca-Cu-O superconducting films by DC diode sputtering.MINGHWEI HONG journal article
7161988Epitaxial films of high T/sub c/oxide superconductors Y/sub 1/Ba/sub 2/Cu/sub 3/O/sub 7/grown on SrTiO/sub 3/by molecular beam epitaxyMINGHWEI HONG book-chapter
7171988In situ epitaxial growth of Y 1 Ba 2 Cu 3 O/sub 7-//sub x/films by molecular beam epitaxy with an activated oxygen sourceMINGHWEI HONG journal article
7181988Thin film research on high T/sub c/superconductorsMINGHWEI HONG journal article
7191988Tunneling characteristics of internal josephson junctions in Y Ba 2 Cu 3 O 7- $δ$ thin filmsMINGHWEI HONG journal article
7201988Thallium-Based Superconducting Films by Sputtering Using a Single TargetMINGHWEI HONG journal article
7211988High temperature superconducting oxide filmsMINGHWEI HONG journal article
7221988Y-Ba-Cu-O films by rf magnetron sputtering using single composite targets: Superconducting and structural propertiesMINGHWEI HONG journal article
7231988Magnetic rare-earth superlatticesMINGHWEI HONG journal article
7241988Ion-beam-induced destruction of superconducting phase coherence in YBa 2 Cu 3 O 7- $δ$MINGHWEI HONG journal article
7251988Scanning electron microscope identification of weak links in superconducting thin filmsMINGHWEI HONG journal article
7261988Insitu epitaxial growth of Y1Ba2Cu3O7- x films by molecular beam epitaxy with an activated oxygen sourceMINGHWEI HONG journal article
7271988Crystal structure of the 80 K superconductor YBa2Cu4O8MINGHWEI HONG journal article
7281988Interlayer exchange in magnetic superlatticesMINGHWEI HONG journal article
7291988Incommensurate superlattice and 90° twist boundaries in the superconducting phase of Bi-Sr-Ca-Cu-OMINGHWEI HONG journal article
7301988Microstructure and stability of rf-diode sputtered GdTbFeCo thin filmsMINGHWEI HONG journal article
7311988Microstructures of YBa2Cu3O7- x superconducting thin films grown on a SrTiO3 (100) substrateMINGHWEI HONG journal article
7321988Superconducting Tl-Ba-Ca-Cu-O films by sputteringMINGHWEI HONG journal article
7331988Ion beam patterning of spin-on metalorganic precursors and formation of high Tc superconductorsMINGHWEI HONG journal article
7341988Versatile new metalorganic process for preparing superconducting thin filmsMINGHWEI HONG journal article
7351988Oxygen defect in YBa 2 Cu 3 O x: An x-ray photoemission approachMINGHWEI HONG journal article
7361988Observation of a halide (F/Cl) stabilized, new perovskite phase in superconducting Y2Ba5Cu7Ox filmsMINGHWEI HONG journal article
7371988Electronic excitations of the Y Ba 2 Cu 3 O 7- x superconductor: A study by transmission electron-energy-loss spectroscopy with an electron microprobeMINGHWEI HONG journal article
7381988Tunneling characteristics of internal Josephson junctions in YBa 2 Cu 3 O/sub 7-//sub $δ$/thin filmsMINGHWEI HONG journal article
7391988Properties of In Situ Superconducting Y sub 1 Ba sub 2 Cu sub 3 O sub 7-x Films by Molecular Beam Epitaxy With an Activated Oxygen SourceMINGHWEI HONG journal article
7401988Thin film research on high Tc superconductorsMINGHWEI HONG conference paper
7411988Growth and characterizations of Bi-Sr-Ca-Cu-O superconducting thin films by rf magnetron sputtering.MINGHWEI HONG journal article
7421988CW laser etching of Ba/sub 2/YCu/sub 3/O/sub 7/filmsMINGHWEI HONG journal article
7431987Magneto-optical study of uranium additions to amorphous Tb <inf>x</inf>Fe<inf>1-x</inf>Dillon Jr.; J.F.; Van Dover, R.B.; Hong, M.; Gyorgy, E.M.; Albiston, S.D.; MINGHWEI HONG journal article86
7441987Metallic Multilayers and EpitaxyHong, M.; MINGHWEI HONG other10
7451987Break-junction tunneling measurements of the high-T/sub c/superconductor Y 1 Ba 2 Cu 3 O/sub 9-//sub $δ$MINGHWEI HONG journal article
7461987Transport critical-current characteristics of Y/sub 1/Ba/sub 2/Cu/sub 3/O/sub xMINGHWEI HONG report
7471987Epitaxial Films of High T c Oxide Superconductors Y 1 Ba 2 Cu 3 O 7 Grown on SrTiO 3 by Molecular Beam EpitaxyMINGHWEI HONG journal article
7481987Magneto-optical study of uranium additions to amorphous Tb/sub x/Fe/sub 1-//sub xMINGHWEI HONG journal article
7491987Metallic Multilayers and EpitaxyMINGHWEI HONG journal article10
7501987Low magnetic field superconducting phase diagram of the high-Tsub (c) YBa 2 Cu 3 Osub (9-$δ$)MINGHWEI HONG journal article
7511987Modulated magnetic properties in synthetic rare-earth Gd-Y superlatticesMINGHWEI HONG journal article
7521987Structural and superconducting properties of orientation-ordered Y/sub 1/Ba/sub 2/Cu/sub 3/O/sub 7-//sub x/films prepared by molecular-beam epitaxyMINGHWEI HONG journal article
7531987MAGNETIC MULTILAYERS AND EPITAXYMINGHWEI HONG conference paper
7541987Polarized neutron diffraction studies of Gd-Y synthetic superlatticesMINGHWEI HONG journal article
7551987Break-junction tunneling measurements of the high-T/sub c/superconductor Y/sub 1/Ba/sub 2/Cu/sub 3/O/sub 9-//sub deltaMINGHWEI HONG journal article
7561987Anomalous aging characteristics of amorphous GdCo filmsMINGHWEI HONG journal article
7571987Magneto-optical study of uranium additions to amorphous TbxFe1- xMINGHWEI HONG journal article
7581987Single Crystal Superconducting Y1Ba2Cu3O7- x Oxide Films by Molecular Beam EpitaxyMINGHWEI HONG book-chapter
7591987Synthetic magnetic rare-earth Dy-Y superlatticesMINGHWEI HONG journal article
7601987Superconducting Y-Ba-Cu-O oxide films by sputteringMINGHWEI HONG journal article
7611987Magnetic rare earth superlattices.[Gd/Y, Dy/Y, Gd/Dy, Ho/Y]MINGHWEI HONG report
7621987A Versatile new Metallo-Organic Spin-on Process for Preparing Superconducting Thin filmsMINGHWEI HONG journal article
7631987Antiphase domain boundaries in the superconducting phase of the Y-Ba-Cu-O systemMINGHWEI HONG journal article
7641987Break-junction tunneling measurements of the high-T c superconductor Y 1 Ba 2 Cu 3 O 9- $δ$MINGHWEI HONG journal article
7651987tors implantafson of sputtered Y-Ba= Cu-0 filmsMINGHWEI HONG journal article
7661987Evidence for weak link and anisotropy limitations on the transport critical current in bulk polycrystalline Y1Ba2Cu3OxMINGHWEI HONG journal article
7671987Low magnetic field superconducting phase diagram of the high-Tc YBa2Cu3O9-$δ$MINGHWEI HONG journal article
7681987Structural and superconducting properties of orientation-ordered Y 1 Ba 2 Cu 3 O 7- x films prepared by molecular-beam epitaxyMINGHWEI HONG journal article
7691987Raman detection of the superconducting gap in Ba-Y-Cu-O superconductorsMINGHWEI HONG journal article
7701986Study of liquid-infiltrated Nb-Sn superconducting composite wire by specific-heat measurementsMINGHWEI HONG journal article
7711986dc magnetron-and diode-sputtered polycrystalline Fe and amorphous Tb (FeCo) films: Morphology and magnetic propertiesMINGHWEI HONG journal article
7721986Microstructure of magnetron co-sputtered CoCr thin filmsMINGHWEI HONG journal article
7731986Observation of a magnetic antiphase domain structure with long-range order in a synthetic Gd-Y superlatticeMINGHWEI HONG journal article
7741986Microstructures of thin sputtered amorphous Tb0. 26Fe0. 74 and polycrystalline Fe filmsMINGHWEI HONG journal article
7751986Magnetic properties of single crystal rare-earth Gd-Y superlatticesMINGHWEI HONG journal article
7761986Growth of rare-earth single crystals by molecular beam epitaxy: The epitaxial relationship between hcp rare earth and bcc niobiumMINGHWEI HONG journal article
7771986Magnetic anisotropy in dc diode getter sputtered GdCo films—How important is the argon content in the films?MINGHWEI HONG journal article
7781986CoCr thin film prepared by magnetron Co-sputteringMINGHWEI HONG journal article
7791986Effect of oxidation on the magnetic properties of unprotected TbFe thin filmsMINGHWEI HONG journal article
7801985New phase formation and superconductivity in reactively diffused Nb 3 Sn multilayer filmsMINGHWEI HONG journal article
7811985Reactive diffusion and superconductivity of Nb3Al multilayer filmsMINGHWEI HONG journal article
7821985Microstructures of Thin Sputtered Amorphous Tb sub 0. 26 Fe sub 0. 74 and Polycrystalline Iron FilmsMINGHWEI HONG journal article
7831985Properties of rare-earth metal superlattice grown by molecular-beam epitaxyMINGHWEI HONG journal article
7841985Further investigations of the solid-liquid reaction and high-field critical current density in liquid-infiltrated Nb-Sn superconductorsMINGHWEI HONG journal article
7851985Structural and magnetic properties of single crystal rare earth Gd-Y superlatticesMINGHWEI HONG journal article
7861985Aging effects on amorphous Tb-transition-metal films prepared by diode and magnetron sputteringMINGHWEI HONG journal article
7871985Intrinsic anisotropy of Tb-Fe films prepared by magnetron Co sputteringMINGHWEI HONG journal article
7881985Magnetic and structural properties of single-crystal rare-earth Gd-Y superlatticesMINGHWEI HONG journal article
7891984dc getter sputtered amorphous GdCo films: Magnetic anisotropy and in-depth chemical compositionMINGHWEI HONG journal article
7901984Intrinsic Anisotropy of Tb-Fe Films Prepared by Magnetron Cobalt SputteringMINGHWEI HONG journal article
7911984Electromechanical and metallurgical properties of liquid-infiltration Nb-Ta/Sn multifilamentary superconductorMINGHWEI HONG journal article
7921984Structural Properties of Single Crystal Rare-Earth Thin Films Y and Gd Grown by Molecular Beam EpitaxyMINGHWEI HONG journal article
7931983Superconducting properties of a liquid-infiltration Nb-Nb3Sn composite formed during a low-temperature reactionMINGHWEI HONG journal article
7941983The microstructure and critical current characteristic of a bronze-processed multifilamentary Nb3Sn superconducting wireMINGHWEI HONG journal article
7951983Multifilamentary Nb-Nb 3 Sn composite by liquid infiltration method: Superconducting, metallurgical, and mechanical propertiesMINGHWEI HONG journal article
7961983Multifilamentary superconducting (NbTa)-Sn composite wire by solid-liquid reaction for possible application above 20 teslaMINGHWEI HONG journal article
7971982Developmental Studies on Powder-Processed Nb3A1 Superconducting WireMINGHWEI HONG book-chapter
7981982Powder Metallurgy Processed A15 Nb? A1 Superconducting WireMINGHWEI HONG book
7991982AN INVESTIGATION ON THE ENHANCEMENT OF THE CRITICAL CURRENT DENSITIES IN BRONZE-PROCESSED NB 3 SN, PAPER FROM ADVANCES IN CRYOGENIC ENGINEERING MATERIALSMINGHWEI HONG journal article
8001982An Investigation on the Enhancement of the Critical Current Densities in Bronze-Processed Nb3SnMINGHWEI HONG book-chapter
8011982The Effect of High Compressive Stress on the Critical Current in Multistrand Nb3Sn ConductorsMINGHWEI HONG book-chapter
8021981Development studies on powder processed Nb/sub 3/Al superconducting wireMINGHWEI HONG report
8031981NB-AL AND NB-AL BASED A15 SUPERCONDUCTORS BY SOLID-LIQUID REACTIONMINGHWEI HONG conference paper
8041981The crystallographic orientation of A15 V3Ga and Nb3Al precipitates in BCC matricesMINGHWEI HONG journal article
8051981THE CRYSTALLOGRAPHIC ORIENTATION OF Al5 v 3MINGHWEI HONG journal article
8061981Microstructure and properties of A15 superconductors formed by direct precipitationMINGHWEI HONG journal article
8071981The preferred habit of a tetragonal inclusion in a cubix matrixMINGHWEI HONG journal article
8081980A15 superconductors through direct solid-state precipitation: V/sub 3/Ga and Nb/sub 3/AlMINGHWEI HONG report
8091980Development of A-15 (V3Ga) superconducting material through controlled precipitationMINGHWEI HONG journal article
8101980Research on the Monolithic Process of Making A15 Superconducting MaterialsMINGHWEI HONG book-chapter
8111980Direct solid-state precipitation-processed A15 (Nb3A1) superconducting materialMINGHWEI HONG journal article
8121979EFFECTS OF 3RD ELEMENT ADDITION ON THE METALLURGICAL AND SUPERCONDUCTING PROPERTIES OF WIRES OR TAPES IN THE V-GA SYSTEMMINGHWEI HONG conference paper
8131979SOME RESULTS ABOUT SUPERCONDUCTING WIRE OR TAPE THROUGH CONTROLLED-PRECIPITATION-PROCESS IN V-GA SYSTEMMINGHWEI HONG conference paper
8141978Study by elastic theory of the clustering of solute atoms during the early stage of solid solution decompositionMINGHWEI HONG report
8151978Ductile superconducting wire through novel metallurgical techniquesMINGHWEI HONG report
816-Impact of metal/oxide interface on DC and RF performance of depletion-mode GaAs MOSFET employing MBE grown Ga <inf>2</inf> O <inf>3</inf> (Gd <inf>2</inf> O <inf>3</inf> ) as gate dielectricYang, B.; Ye, P.D.; Kwo, J.; Frei, M.R.; Gossmann, H.-J.L.; Mannaerts, J.P.; Sergent, M.; Hong, M.; Ng, K.; Bude, J.; MINGHWEI HONG Conference Paper0