第 1 到 37 筆結果,共 37 筆。
公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 | |
---|---|---|---|---|---|---|---|
1 | 2014 | Greatly improved interfacial passivation of in-situ high 庥 dielectric deposition on freshly grown molecule beam epitaxy Ge epitaxial layer on Ge(100) | Chu, R.L.; Liu, Y.C.; Lee, W.C.; Lin, T.D.; Huang, M.L.; Pi, T.W.; Kwo, J.; Hong, M.; MINGHWEI HONG | Applied Physics Letters | 14 | 13 | |
2 | 2012 | Growth mechanism of atomic layer deposited Al<inf>2</inf>O<inf>3</inf>on GaAs(001)-4 ? 6 surface with trimethylaluminum and water as precursors | Huang, M.L.; Chang, Y.H.; Lin, T.D.; Lin, H.Y.; Liu, Y.T.; Pi, T.W.; Hong, M.; Kwo, J.; MINGHWEI HONG | Applied Physics Letters | 15 | 15 | |
3 | 2012 | Effective passivation of In <inf>0.2</inf>Ga <inf>0.8</inf>As by HfO <inf>2</inf> surpassing Al <inf>2</inf>O <inf>3</inf> via in-situ atomic layer deposition | Chang, Y.H.; Lin, C.A.; Liu, Y.T.; Chiang, T.H.; Lin, H.Y.; Huang, M.L.; Lin, T.D.; Pi, T.W.; Kwo, J.; Hong, M.; MINGHWEI HONG | Applied Physics Letters | 26 | 24 | |
4 | 2011 | In situ atomic layer deposition and synchrotron-radiation photoemission study of Al<inf>2</inf>O<inf>3</inf> on pristine n-GaAs(0 0 1)-4 ? 6 surface | Chang, Y.H.; Huang, M.L.; Chang, P.; Shen, J.Y.; Chen, B.R.; Hsu, C.L.; Pi, T.W.; Hong, M.; Kwo, J.; MINGHWEI HONG | Microelectronic Engineering | 16 | 17 | |
5 | 2011 | Atomic-layer-deposited Al<inf>2</inf>O<inf>3</inf> and HfO<inf>2</inf> on GaN: A comparative study on interfaces and electrical characteristics | Chang, Y.C.; Huang, M.L.; Chang, Y.H.; Lee, Y.J.; Chiu, H.C.; Kwo, J.; Hong, M.; MINGHWEI HONG | Microelectronic Engineering | 72 | 73 | |
6 | 2011 | Atomic-scale determination of band offsets at the Gd<inf>2</inf>O <inf>3</inf>/GaAs (100) hetero-interface using scanning tunneling spectroscopy | Chiu, Y.P.; Huang, B.C.; Shih, M.C.; Shen, J.Y.; Chang, P.; Chang, C.S.; Huang, M.L.; Tsai, M.-H.; Hong, M.; YA-PING CHIU ; MINGHWEI HONG | Applied Physics Letters | 10 | 11 | |
7 | 2011 | Direct measurement of interfacial structure in epitaxial Gd <inf>2</inf>O<inf>3</inf> on GaAs (0 0 1) using scanning tunneling microscopy | Chiu, Y.P.; Shih, M.C.; Huang, B.C.; Shen, J.Y.; Huang, M.L.; Lee, W.C.; Chang, P.; Chiang, T.H.; Hong, M.; YA-PING CHIU ; MINGHWEI HONG | Microelectronic Engineering | 2 | 2 | |
8 | 2011 | Electronic structures of Ga <inf>2</inf> O <inf>3</inf> (Gd <inf>2</inf> O <inf>3</inf> ) gate dielectric on n-Ge(001) as grown and after CF <inf>4</inf> plasma treatment: A synchrotron-radiation photoemission study | Pi, T.-W.; Lee, W.C.; Huang, M.L.; Chu, L.K.; Lin, T.D.; Chiang, T.H.; Wang, Y.C.; Wu, Y.D.; Hong, M.; Kwo, J.; MINGHWEI HONG | Journal of Applied Physics | 3 | 3 | |
9 | 2011 | High-resolution core-level photoemission study of CF <inf>4</inf> -treated Gd <inf>2</inf> O <inf>3</inf> (Ga <inf>2</inf> O <inf>3</inf> ) gate dielectric on Ge probed by synchrotron radiation | Pi, T.-W.; Huang, M.L.; Lee, W.C.; Chu, L.K.; Lin, T.D.; Chiang, T.H.; Wang, Y.C.; Wu, Y.D.; Hong, M.; Kwo, J.; MINGHWEI HONG | Applied Physics Letters | 11 | 10 | |
10 | 2011 | Electrical properties and interfacial chemical environments of in situ atomic layer deposited Al<inf>2</inf>O<inf>3</inf> on freshly molecular beam epitaxy grown GaAs | Chang, Y.H.; Huang, M.L.; Chang, P.; Lin, C.A.; Chu, Y.J.; Chen, B.R.; Hsu, C.L.; Kwo, J.; Pi, T.W.; Hong, M.; MINGHWEI HONG | Microelectronic Engineering | 28 | 29 | |
11 | 2010 | Effective passivation and high-performance metal-oxide-semiconductor devices using ultra-high-vacuum deposited high-庥 dielectrics on Ge without interfacial layers | Chu, L.K.; Chu, R.L.; Lin, T.D.; Lee, W.C.; Lin, C.A.; Huang, M.L.; Lee, Y.J.; Kwo, J.; Hong, M.; MINGHWEI HONG | Solid-State Electronics | 27 | 26 | |
12 | 2010 | Lattice strain and in situ chemical depth profiling of nanometer-thick molecular beam epitaxy grown Y<inf>2</inf> O<inf>3</inf> epitaxial films on Si (111) | Lee, Y.J.; Lee, W.C.; Huang, M.L.; Wu, S.Y.; Nieh, C.W.; Hong, M.; Kwo, J.; Hsu, C.-H.; MINGHWEI HONG | Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics | 0 | 2 | |
13 | 2010 | Passivation of InGaAs using in situ molecular beam epitaxy Al2 O3 / HfO2 and HfAlO/ HfO2 | Chang, P.; Lee, W.C.; Huang, M.L.; Lee, Y.J.; Hong, M.; Kwo, J.; MINGHWEI HONG | Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics | 7 | 8 | |
14 | 2009 | Ga2O3(Gd2O3) on Ge without interfacial layers: Energy-band parameters and metal oxide semiconductor devices | Chu, L.K.; Lin, T.D.; Huang, M.L.; Chu, R.L.; Chang, C.C.; Kwo, J.; Hong, M.; MINGHWEI HONG | Applied Physics Letters | 31 | 31 | |
15 | 2009 | InGaAs metal oxide semiconductor devices with Ga<inf>2</inf>O <inf>3</inf>(Gd<inf>2</inf>O<inf>3</inf>) High-庥 dielectrics for science and technology beyond Si CMOS | Hong, M.; Kwo, J.; Lin, T.D.; Huang, M.L.; MINGHWEI HONG | MRS Bulletin | 34 | 33 | |
16 | 2009 | High performance Ga<inf>2</inf>O<inf>3</inf>(Gd<inf>2</inf>O <inf>3</inf>)/Ge MOS devices without interfacial layers | Chu, L.K.; Chu, R.L.; Huang, M.L.; Tung, L.T.; Lin, T.D.; Chang, C.C.; Kwo, J.; Hong, M.; MINGHWEI HONG | 39th European Solid-State Device Research Conference | 0 | 0 | |
17 | 2009 | Nano-electronics of high 庥 dielectrics on ingaas for key technologies beyond Si CMOS | Lin, T.D.; Chang, P.; Chiu, H.C.; Chang, Y.C.; Lin, C.A.; Chang, W.H.; Lee, Y.J.; Chang, Y.H.; Huang, M.L.; Kwo, J.; Hong, M.; MINGHWEI HONG | Conference Proceedings - International Conference on Indium Phosphide and Related Materials | 2 | 0 | |
18 | 2009 | Nanometer-thick single-crystal hexagonal Gd<inf>2</inf>O<inf>3</inf> on GaN for advanced complementary metal-oxide-semiconductor technology | Chang, W.H.; Lee, C.H.; Chang, Y.C.; Chang, P.; Huang, M.L.; Lee, Y.J.; Hsu, C.-H.; Hong, J.M.; Tsai, C.C.; Kwo, J.R.; Hong, M.; MINGHWEI HONG | Advanced Materials | 60 | 57 | |
19 | 2009 | Advances on III-V MOSFET for science and technology beyond Si CMOS | Kwo, J.; Lin, T.D.; Huang, M.L.; Chang, P.; Lee, Y.J.; MINGHWEI HONG | ECS Transactions | 1 | 0 | |
20 | 2009 | Energy-band parameters of atomic layer deposited Al2O 3 and HfO2 on InxGa1-xAs | Huang, M.L.; Chang, Y.C.; Chang, Y.H.; Lin, T.D.; Kwo, J.; Hong, M.; MINGHWEI HONG | Applied Physics Letters | 73 | 71 | |
21 | 2009 | Metal-oxide-semiconductor devices with molecular beam epitaxy-grown Y<inf>2</inf>O<inf>3</inf> on Ge | Chu, L.K.; Lee, W.C.; Huang, M.L.; Chang, Y.H.; Tung, L.T.; Chang, C.C.; Lee, Y.J.; Kwo, J.; Hong, M.; MINGHWEI HONG | Journal of Crystal Growth | 44 | 40 | |
22 | 2008 | Si metal-oxide-semiconductor devices with high 庥 Hf O2 fabricated using a novel MBE template approach followed by atomic layer deposition | Pan, C.H.; Kwo, J.; Lee, K.Y.; Lee, W.C.; Chu, L.K.; Huang, M.L.; Lee, Y.J.; Hong, M.; MINGHWEI HONG | Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures | 5 | 5 | |
23 | 2008 | Atomic-layer-deposited Hf O2 on In0.53 Ga0.47 As: Passivation and energy-band parameters | Chang, Y.C.; Huang, M.L.; Lee, K.Y.; Lee, Y.J.; Lin, T.D.; MINGHWEI HONG ; Kwo, J.; Lay, T.S.; Liao, C.C.; Cheng, K.Y. | Applied Physics Letters | 117 | 101 | |
24 | 2008 | Achieving 1 nm capacitive effective thickness in atomic layer deposited HfO<inf>2</inf> on In<inf>0.53</inf>Ga<inf>0.47</inf>As | Lee, K.Y.; Lee, Y.J.; Chang, P.; Huang, M.L.; Chang, Y.C.; MINGHWEI HONG ; Kwo, J. | Applied Physics Letters | 47 | 40 | |
25 | 2008 | Molecular beam epitaxy grown Ga2 O3 (Gd2 O3) high 庥 dielectrics for germanium passivation-x-ray photoelectron spectroscopy and electrical characteristics | Lee, C.H.; Lin, T.D.; Tung, L.T.; Huang, M.L.; MINGHWEI HONG ; Kwo, J. | Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures | 21 | 21 | |
26 | 2007 | Defining new frontiers in electronic devices with high 庥 dielectrics and interfacial engineering | Hong, M.; Lee, W.C.; Huang, M.L.; Chang, Y.C.; Lin, T.D.; Lee, Y.J.; Kwo, J.; Hsu, C.H.; Lee, H.Y.; MINGHWEI HONG | Thin Solid Films | 9 | 9 | |
27 | 2007 | Cubic HfO<inf>2</inf> doped with y<inf>2</inf>O<inf>2</inf> epitaxial films on GaAs (001) of enhanced dielectric constant | Yang, Z.K.; Lee, W.C.; Lee, Y.J.; Chang, P.; Huang, M.L.; Hong, M.; Hsu, C.-H.; Kwo, J.; MINGHWEI HONG | Applied Physics Letters | 50 | 50 | |
28 | 2007 | InGaAs n-MOS devices integrated using ALD-HfO<inf>2</inf>/metal gate without surface cleaning and interfacial layer passivation | Chang, Y.C.; Huang, M.L.; Lee, Y.J.; Lee, K.Y.; Lin, T.D.; Hong, M.; Kwo, J.; Liao, C.C.; Cheng, K.Y.; Lay, T.S.; MINGHWEI HONG | 2007 International Semiconductor Device Research Symposium | 0 | 0 | |
29 | 2007 | Structural and magnetic properties of epitaxial Fe<inf>3</inf>Si/GaAs heterostructures | Hsu, Y.L.; Lee, Y.J.; Chang, Y.H.; Huang, M.L.; Chiu, Y.N.; Ho, C.C.; Chang, P.; Hsu, C.H.; Hong, M.; Kwo, J.; MINGHWEI HONG | Journal of Crystal Growth | 13 | 13 | |
30 | 2007 | Observation of room temperature ferromagnetic behavior in cluster-free, Co doped Hf O<inf>2</inf> films | Chang, Y.H.; Soo, Y.L.; Lee, W.C.; Huang, M.L.; Lee, Y.J.; Weng, S.C.; Sun, W.H.; Hong, M.; Kwo, J.; Lee, S.F.; Ablett, J.M.; Kao, C.-C.; MINGHWEI HONG | Applied Physics Letters | 22 | 23 | |
31 | 2007 | Structural and electrical characteristics of atomic layer deposited high 庥 HfO<inf>2</inf>on GaN | Chang, Y.C.; Chiu, H.C.; Lee, Y.J.; Huang, M.L.; Lee, K.Y.; Hong, M.; Chiu, Y.N.; Kwo, J.; Wang, Y.H.; MINGHWEI HONG | Applied Physics Letters | 112 | 90 | |
32 | 2007 | Structural and compositional investigation of yttrium-doped HfO<inf>2</inf> films epitaxially grown on Si (111) | Yang, Z.K.; Lee, W.C.; Lee, Y.J.; Chang, P.; Huang, M.L.; Hong, M.; Yu, K.L.; Tang, M.-T.; Lin, B.-H.; Hsu, C.-H.; Kwo, J.; MINGHWEI HONG | Applied Physics Letters | 19 | 18 | |
33 | 2007 | A novel approach of using a MBE template for ALD growth of high-庥 dielectrics | Lee, K.Y.; Lee, W.C.; Huang, M.L.; Chang, C.H.; Lee, Y.J.; Chiu, Y.K.; Wu, T.B.; Hong, M.; Kwo, R.; MINGHWEI HONG | Journal of Crystal Growth | 9 | 9 | |
34 | 2006 | III-V MOSFET's with advanced high 庥 dielectrics | Hong, M.; Kwo, J.; Chen, C.P.; Chang, Y.C.; Huang, M.L.; Lin, T.D.; MINGHWEI HONG | ECS Transactions | 0 | 0 | |
35 | 2006 | Energy-band parameters of atomic-layer-deposition Al<inf>2</inf>O <inf>3</inf>/InGaAs heterostructure | Huang, M.L.; Chang, Y.C.; Chang, C.H.; Lin, T.D.; Kwo, J.; Wu, T.B.; Hong, M.; MINGHWEI HONG | Applied Physics Letters | 181 | 175 | |
36 | 2006 | Molecular beam epitaxy grown template for subsequent atomic layer deposition of high 庥 dielectrics | Lee, K.Y.; Lee, W.C.; Lee, Y.J.; Huang, M.L.; Chang, C.H.; Wu, T.B.; Hong, M.; Kwo, J.; MINGHWEI HONG | Applied Physics Letters | 19 | 21 | |
37 | 2005 | Surface passivation of III-V compound semiconductors using atomic-layer-deposition-grown Al<inf>2</inf>O<inf>3</inf> | Huang, M.L.; Chang, Y.C.; Chang, C.H.; Lee, Y.J.; Chang, P.; Kwo, J.; Wu, T.B.; Hong, M.; MINGHWEI HONG | Applied Physics Letters | 0 |