https://scholars.lib.ntu.edu.tw/handle/123456789/119820
標題: | A derivative of oxadiazole used as the host of the metal doped electron transport layer material | 作者: | Wu, Meng-Hsiu JIUN-HAW LEE MAN-KIT LEUNG Hsu, Yu-Nu Hu, Pier-Jy Chu, Bennet Chang, Yih |
公開日期: | 2005 | 起(迄)頁: | 773 - 774 | 來源出版物: | International Display Manufacturing Conference and Exhibition, IDMC'05 | 會議論文: | International Display Manufacturing Conference and Exhibition, IDM | 摘要: | In this paper, we report a new host material used as the host of electron transport layer (ETL) for metal dopant (MD) technique. This host material exhibits high Tg and good thermal stability. The average roughness of the thin film is quite small as compared with other derivatives it helps to reduce the leakage current. |
URI: | http://ntur.lib.ntu.edu.tw//handle/246246/236782 https://www.scopus.com/inward/record.uri?eid=2-s2.0-33644641753&partnerID=40&md5=14683d92917207c65b3557e62795fd1d |
SDG/關鍵字: | Doping (additives); Electron transitions; Leakage currents; Surface roughness; Thermodynamic stability; Thin films; Electron transport layer (ETL); Metal dopant (MD); Oxadiazole; Sulfur compounds |
顯示於: | 光電工程學研究所 |
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