|Title:||Shubnikov–de Haas oscillations of two-dimensional electron gas in an InAsN/InGaAs single quantum well||Authors:||Hang, D.R.
|Issue Date:||2002||Publisher:||Taipei:National Taiwan University Dept Elect Engn||Journal Volume:||17||Journal Issue:||2002||Start page/Pages:||-||Source:||INSTITUTE OF PHYSICS PUBLISHING SEMICONDUCTOR SCIENCE AND TECHNOLOGY Semicond. Sci. Technol||Abstract:||
We present the first investigation of Shubnikov–de Haas (SdH) oscillations
of two-dimensional electron gas formed in an InAsN/InGaAs single
quantum well (QW) grown on an InP substrate using gas source molecular
beam epitaxy and a radio-frequency (rf ) plasma nitrogen source. The
photoluminescence (PL) peak energy of the InAsN/InGaAs QW decreases
compared with that of InAs/InGaAs QW. This agrees with the bowing effect
due to the incorporation of nitrogen atoms. The nitrogen content can be
estimated to be 0.4% using the PL peak positions as well as x-ray
diffraction. From the SdH oscillations, the carrier concentration is 2.85 × 1011 cm−2 and the effective mass is 0.1±0.01m0. The enhancement of the
effective mass is mainly due to the incorporation of the nitrogen atoms in the
InAs lattice, which is consistent with a recent study on InAsN bulk alloys.
The large increase of the effective mass cannot be explained by the simple
band anticrossing model. In addition, we observe a temperatureindependent
magnetoresistivity at a critical magnetic field. Our analysis
supports the fact that the value of the critical exponent in the quantum Hall
effect is not universal.
|Appears in Collections:||電機工程學系|
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