https://scholars.lib.ntu.edu.tw/handle/123456789/147640
Title: | Shubnikov–de Haas oscillations of two-dimensional electron gas in an InAsN/InGaAs single quantum well | Authors: | Hang, D.R. Huang, C.F. Hung, W.K. Chang, Y.H. Chen, J.C. Yang, H.C. Chen, Y.F. Shih, D.K. Chu, T.Y. Lin, H.H. |
Issue Date: | 2002 | Publisher: | Taipei:National Taiwan University Dept Elect Engn | Journal Volume: | 17 | Journal Issue: | 2002 | Start page/Pages: | - | Source: | INSTITUTE OF PHYSICS PUBLISHING SEMICONDUCTOR SCIENCE AND TECHNOLOGY Semicond. Sci. Technol | Abstract: | We present the first investigation of Shubnikov–de Haas (SdH) oscillations of two-dimensional electron gas formed in an InAsN/InGaAs single quantum well (QW) grown on an InP substrate using gas source molecular beam epitaxy and a radio-frequency (rf ) plasma nitrogen source. The photoluminescence (PL) peak energy of the InAsN/InGaAs QW decreases compared with that of InAs/InGaAs QW. This agrees with the bowing effect due to the incorporation of nitrogen atoms. The nitrogen content can be estimated to be 0.4% using the PL peak positions as well as x-ray diffraction. From the SdH oscillations, the carrier concentration is 2.85 × 1011 cm−2 and the effective mass is 0.1±0.01m0. The enhancement of the effective mass is mainly due to the incorporation of the nitrogen atoms in the InAs lattice, which is consistent with a recent study on InAsN bulk alloys. The large increase of the effective mass cannot be explained by the simple band anticrossing model. In addition, we observe a temperatureindependent magnetoresistivity at a critical magnetic field. Our analysis supports the fact that the value of the critical exponent in the quantum Hall effect is not universal. |
URI: | http://ntur.lib.ntu.edu.tw//handle/246246/2006111501211829 | Other Identifiers: | 246246/2006111501211829 |
Appears in Collections: | 電機工程學系 |
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