|Title:||Ka-band monolithic GaAs PHEMT circuits for transceiver applications||Authors:||Lien, Chun-Hsien
|Issue Date:||Dec-2000||Start page/Pages:||-||Source:||Microwave Conference, 2000 Asia-Pacific||Abstract:||
This paper presents the development of a one-stage and a two-stage Ka-band monolithic LNA for commercial wireless communication applications. The monolithic microwave/millimeter-wave integrated circuits (MMICs) are fabricated with a 0.2-μm pseudomorphic (PM) GaAs-based HEMT technology, carried out by commercially available foundry. The one-stage amplifier demonstrated a measured small signal gain of 9.5 dB with a noise figure (NF) of 2.7 dB at 28 GHz, while the two-stage amplifier has a measured gain of 17 dB with 3.3 dB NF at 28 GHz. Due to fabrication with the commercial foundry process, these MMICs have the potential for mass production.
|URI:||https://www.scopus.com/inward/record.uri?eid=2-s2.0-0033344188&partnerID=40&md5=20d95775c530446ef6bf4705e53b5014||Other Identifiers:||N/A||DOI:||10.1109/APMC.2000.926039||SDG/Keyword:||High electron mobility transistors; Monolithic microwave integrated circuits; Semiconducting gallium arsenide; Wireless telecommunication systems; Low noise amplifiers (LNA); Microwave amplifiers|
|Appears in Collections:||電機工程學系|
|00926039.pdf||143.02 kB||Adobe PDF||View/Open|
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