| DC Field | Value | Language |
|---|
| dc.contributor | Dept. of Electr. Eng., National Taiwan Univ. | en |
| dc.contributor.author | Lien, Chun-Hsien | en |
| dc.contributor.author | Deng, Kuo-Liang | en |
| dc.contributor.author | Liu, Chieh-Chao | en |
| dc.contributor.author | Chou, Hua-Shan | en |
| dc.contributor.author | HUEI WANG | en |
| dc.creator | Lien, Chun-Hsien; Deng, Kuo-Liang; Liu, Chieh-Chao; Chou, Hua-Shan; Wang, Huei | en |
| dc.date | 2000-12 | en |
| dc.date.accessioned | 2007-04-19T03:39:31Z | - |
| dc.date.accessioned | 2018-07-06T10:23:11Z | - |
| dc.date.available | 2007-04-19T03:39:31Z | - |
| dc.date.available | 2018-07-06T10:23:11Z | - |
| dc.date.issued | 2000-12 | - |
| dc.identifier | N/A | en |
| dc.identifier.uri | https://www.scopus.com/inward/record.uri?eid=2-s2.0-0033344188&partnerID=40&md5=20d95775c530446ef6bf4705e53b5014 | - |
| dc.description.abstract | This paper presents the development of a one-stage and a two-stage Ka-band monolithic LNA for commercial wireless communication applications. The monolithic microwave/millimeter-wave integrated circuits (MMICs) are fabricated with a 0.2-μm pseudomorphic (PM) GaAs-based HEMT technology, carried out by commercially available foundry. The one-stage amplifier demonstrated a measured small signal gain of 9.5 dB with a noise figure (NF) of 2.7 dB at 28 GHz, while the two-stage amplifier has a measured gain of 17 dB with 3.3 dB NF at 28 GHz. Due to fabrication with the commercial foundry process, these MMICs have the potential for mass production. | - |
| dc.format | application/pdf | en |
| dc.format.extent | 146452 bytes | - |
| dc.format.mimetype | application/pdf | - |
| dc.language | en-US | en |
| dc.language.iso | en_US | - |
| dc.relation | Microwave Conference, 2000 Asia-Pacific | en |
| dc.relation.ispartof | Microwave Conference, 2000 Asia-Pacific | - |
| dc.subject.other | High electron mobility transistors; Monolithic microwave integrated circuits; Semiconducting gallium arsenide; Wireless telecommunication systems; Low noise amplifiers (LNA); Microwave amplifiers | - |
| dc.title | Ka-band monolithic GaAs PHEMT circuits for transceiver applications | en |
| dc.type | journal article | en |
| dc.identifier.doi | 10.1109/APMC.2000.926039 | en |
| dc.identifier.scopus | 2-s2.0-0033344188 | - |
| dc.relation.pages | - | - |
| dc.identifier.uri.fulltext | http://ntur.lib.ntu.edu.tw/bitstream/246246/2007041910021401/1/00926039.pdf | - |
| item.grantfulltext | open | - |
| item.openairecristype | http://purl.org/coar/resource_type/c_6501 | - |
| item.fulltext | with fulltext | - |
| item.cerifentitytype | Publications | - |
| item.languageiso639-1 | en_US | - |
| item.openairetype | journal article | - |
| crisitem.author.dept | Communication Engineering | - |
| crisitem.author.dept | Electrical Engineering | - |
| crisitem.author.orcid | 0000-0002-9903-1979 | - |
| crisitem.author.parentorg | College of Electrical Engineering and Computer Science | - |
| crisitem.author.parentorg | College of Electrical Engineering and Computer Science | - |
| Appears in Collections: | 電機工程學系
|
