https://scholars.lib.ntu.edu.tw/handle/123456789/149358
標題: | Photoluminescence study of the self-organized InAs/GaAs quantum dots grown by gas source molecular beam epitaxy | 作者: | Chen, Ming-Chin Lin, Hao-Hsiung |
公開日期: | 九月-1997 | 起(迄)頁: | - | 來源出版物: | 1997 IEEE International Symposium on Compound Semiconductors | 摘要: | Self-organized I d s quantum dots (QDs) grown on both (100) exact and (100) misoriented 7' toward (1 10) GaAs substrates using gas source molecular beam epitaxy (GSMBE) with V/III ratio ranging from 1.1 to 20 have been studied by photoluminescence (PL) measurements from 8.5 to 300 K. The QD structures grown on the misoriented substrates show a better uniformity than those grown on the exact substrates at the same growth conditions. Effects of ASH; flow rate on the PL intensity, peak energy and linewidth for QDs grown on both types of substrates are presented. Basically, higher ASH; flow rate gives higher PL intensity at 8.5 K. At room temperature( 300K), on the contrary, lower ASH; flow rate results in higher PL intensity. The study of thermal quenching energy reveals that the larger the dot size the better the PL intensity at 300K. © 1998 IEEE. |
URI: | https://www.scopus.com/inward/record.uri?eid=2-s2.0-85053163853&doi=10.1109%2fISCS.1998.711746&partnerID=40&md5=18c5f0a61d88a35823f629d51d4d9b87 | 其他識別: | N/A | DOI: | 10.1109/ISCS.1998.711746 | SDG/關鍵字: | Gallium arsenide; III-V semiconductors; Indium arsenide; Molecular beam epitaxy; Molecular beams; Nanocrystals; Photoluminescence; Semiconductor quantum dots; Substrates; GaAs substrates; Growth conditions; InAs/GaAs quantum dots; Misoriented substrates; Photoluminescence measurements; PL intensity; Thermal quenching; V/III ratio; Gas source molecular beam epitaxy |
顯示於: | 電機工程學系 |
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