https://scholars.lib.ntu.edu.tw/handle/123456789/150170
標題: | High temperature InAs infrared detector based on metal-insulator-semiconductor structure | 作者: | Su, Hung-Der Chang, Shou-Zen SI-CHEN LEE Sun, Tai-Ping |
關鍵字: | Indium compounds; Infrared detectors; Metal- semiconductor-metal structures | 公開日期: | 五月-1995 | 卷: | 31 | 期: | 11 | 起(迄)頁: | 918-920 | 來源出版物: | Electronics Letters | 摘要: | The Au/Cr/a-SiNx:H/(n)InAs/GaAs metal-insulator-semiconductor (MIS) capacitor was fabricated as a basic element of charge injection devices using plasma enhanced chemical vapour deposition. The electrical properties of the capacitor were analysed as a function of temperature using high frequency (1MHz) capacitance-voltage measurements. It was demonstrated that the capacitor can still be biased into deep depletion at 180K. When this capacitor is used as an integrated infrared detector in a charge injection device, it exhibits the capacity to detect infrared signals at a temperature of 180K, higher than that of an InSb infrared detector (77 K), and the device can be cooled thermoelectrically. © 1995, IEE. All rights reserved. |
URI: | http://ntur.lib.ntu.edu.tw//handle/246246/2007041910042598 https://www.scopus.com/inward/record.uri?eid=2-s2.0-0029304557&doi=10.1049%2fel%3a19950628&partnerID=40&md5=dbd4a00ad85d42f8870e8d8164328cd4 |
ISSN: | 00135194 | DOI: | 10.1049/el:19950628 | SDG/關鍵字: | Annealing; Capacitance measurement; Chemical vapor deposition; Electric properties; Infrared detectors; MIS devices; Molecular beam epitaxy; Plasma applications; Semiconducting indium compounds; Semiconductor growth; Thermal effects; Voltage measurement; Charge injection devices; Integrated infrared detectors; Metal insulator semiconductor capacitor; Plasma enhanced chemical vapor deposition; Capacitors |
顯示於: | 電機工程學系 |
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00390903.pdf | 308.67 kB | Adobe PDF | 檢視/開啟 |
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