DC Field | Value | Language |
dc.contributor | 國立臺灣大學電機工程學系暨研究所 | zh_TW |
dc.contributor.author | 呂學士 | zh_TW |
dc.creator | 呂學士 | zh_TW |
dc.date | 2004-07-31 | - |
dc.date.accessioned | 2006-07-25T09:04:40Z | - |
dc.date.accessioned | 2018-07-06T13:51:04Z | - |
dc.date.available | 2006-07-25T09:04:40Z | - |
dc.date.available | 2018-07-06T13:51:04Z | - |
dc.date.issued | 2004-07-31 | - |
dc.identifier | 922219E002008 | zh_TW |
dc.identifier.uri | http://ntur.lib.ntu.edu.tw//handle/246246/8004 | - |
dc.description.abstract | 本計劃中,已實現以磷化銦鎵/砷化鎵
異質接面雙極電晶體製作之匹配良好的寬
頻放大器,多迴授路徑技術亦被用來同時
達成阻抗匹配及頻寬增加。此外,從電路
的電壓增益公式中之極點位置,我們發展
出一種方法,可用來決定輸入及輸出返回
損失(或S11/S22)的頻率響應。實驗結果發
現,此電路具有16dB 的小訊號增益及
11.6GHz 的3dB 頻寬,且在這頻寬之內,
輸入和輸出返回損失皆小於-10dB,這些結
果和我們用公式推導出的電壓增益,轉導
增益,頻寬及輸出入阻抗都很吻合,並且
也符合此計畫所要求的規格。此外,針對
此電路的過阻尼現象,我們也在射極加上
電容來克服。 | zh_TW |
dc.description.abstract | In this project, the realization of
matched impedance wideband amplifiers
fabricated by InGaP/GaAs hetero-junction
bipolar transistor (HBTs) process is reported.
The technique of multiple feedback loops
was used to achieve terminal impedance
matching and wide bandwidth at the same
time. A general method for the determination
of frequency responses of input/output return
losses (or S11/S22) from the poles of voltage
gain was also proposed. The experimental
results showed that a small signal gain of
16dB and a 3-dB bandwidth of 11.6GHz with
in-band input/output return loss less
than –10dB were obtained. These values
agreed well with those predicted from the
analytic expressions that we derived for
voltage gain, transimpedance gain,
bandwidth, input and output impedances.
Also these results are suited for the
specification of this project. The intrinsic
over-damped characteristic of this amplifier
was proved and emitter capacitive peaking
was used to remedy this problem. The
tradeoff between the input impedance
matching and bandwidth was also found. | en |
dc.format | application/pdf | zh_TW |
dc.format.extent | 425997 bytes | - |
dc.format.mimetype | application/pdf | - |
dc.language | zh-TW | zh_TW |
dc.language.iso | zh_TW | - |
dc.publisher | 臺北市:國立臺灣大學電機工程學系暨研究所 | zh_TW |
dc.rights | 國立臺灣大學電機工程學系暨研究所 | zh_TW |
dc.subject | 寬頻放大器 | zh_TW |
dc.subject | 多路徑迴授 | zh_TW |
dc.subject | 磷化
銦鎵/砷化鎵 | zh_TW |
dc.subject | wideband amplifier | en |
dc.subject | multiple
feedback | en |
dc.subject | InGaP/GaAs | en |
dc.title | 子計畫八:HBT 中頻積體電路及後製程研究(3/3) | zh_TW |
dc.type | report | en |
dc.identifier.uri.fulltext | http://ntur.lib.ntu.edu.tw/bitstream/246246/8004/1/922219E002008.pdf | - |
dc.coverage | 計畫年度:92;起迄日期:2003-08-01/2004-07-31 | zh_TW |
item.openairetype | report | - |
item.fulltext | with fulltext | - |
item.languageiso639-1 | zh_TW | - |
item.cerifentitytype | Publications | - |
item.grantfulltext | open | - |
item.openairecristype | http://purl.org/coar/resource_type/c_93fc | - |
crisitem.author.dept | MediaTek-NTU Research Center | - |
crisitem.author.orcid | 0000-0003-3106-3154 | - |
crisitem.author.parentorg | Others: University-Level Research Centers | - |
Appears in Collections: | 電機工程學系
|