https://scholars.lib.ntu.edu.tw/handle/123456789/154278
標題: | Nonlinear Polarization Switching Near Half the Band Gap in Semiconductors | 作者: | Yang, C. C. Villeneuve, A. Stegeman, G. I. Lin, C. H. Chiou, I. P Lin, Hao-Hsiung |
公開日期: | 1993 | 卷: | v.18 | 起(迄)頁: | 1487-1489 | 來源出版物: | Optics Letters | 摘要: | Experimental results of nonlinear polarization switching based on the phenomenon of power-dependent polarization evolution in an AlGaAs strip-loaded waveguide are reported. At 1550 nm, an input peak intensity of 28 GW/cm2 (before the waveguide) results in 30% power switching in a 2-cm-long waveguide. Numerical studies show that we can make the nonlinear switching more efficient by using the nonlinear anisotropy in a multiple-quantum-well waveguide. © 1993 Optical Society of America. |
URI: | https://www.scopus.com/inward/record.uri?eid=2-s2.0-0027653356&doi=10.1364%2fOL.18.001487&partnerID=40&md5=e70173de0febbe25fd5d368679448014 | DOI: | 10.1364/OL.18.001487 | SDG/關鍵字: | Light polarization; Semiconducting aluminum compounds; Semiconductor materials; Semiconductor quantum wells; Switching systems; Band gaps; Polarization switching; Nonlinear optics |
顯示於: | 電機工程學系 |
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