https://scholars.lib.ntu.edu.tw/handle/123456789/155601
標題: | Hot carrier recombination model of visible electroluminescence from metal oxide silicon tunneling diodes | 作者: | CHEE-WEE LIU Chang, S. T. Liu, W. T. MIIN-JANG CHEN CHING-FUH LIN |
公開日期: | 2000 | 卷: | 77 | 期: | 26 | 起(迄)頁: | 4347-4349 | 來源出版物: | Applied Physics Letters | 摘要: | We report the visible electroluminescence at room temperature from metal-oxide-silicon tunneling diodes. As biased in the Fowler-Nordheim regime, the electrons tunnel from the gate electrode through the ultrathin oxide and reach the Si anode with sufficiently high energy. The hot electrons cause the impact ionization, and generate the secondary hot electrons and hot holes in Si substrates. The visible light comes from the radiative recombination between the secondary hot electrons and hot holes, and the hot carrier recombination model can fit the visible electroluminescence spectra. © 2000 American Institute of Physics. |
URI: | http://ntur.lib.ntu.edu.tw//handle/246246/145910 https://www.scopus.com/inward/record.uri?eid=2-s2.0-0009774040&doi=10.1063%2f1.1332825&partnerID=40&md5=92aa0d8cbf91c9a331458b6981e4e930 |
ISSN: | 00036951 | DOI: | 10.1063/1.1332825 |
顯示於: | 電機工程學系 |
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