https://scholars.lib.ntu.edu.tw/handle/123456789/155602
標題: | Roughness-enhanced electroluminescence from metal oxide silicon tunneling diodes | 作者: | CHEE-WEE LIU MIN-HUNG LEE MIIN-JANG CHEN CHING-FUH LIN MING-YAU CHERN |
公開日期: | 2000 | 卷: | 21 | 期: | 12 | 起(迄)頁: | 601-603 | 來源出版物: | IEEE Electron Device Letters | 摘要: | An approximate two-order increase in magnitude in electroluminescence was observed for the metal-oxide-silicon tunneling diodes with oxide grown at 900 °C, as compared to 1000 °C. The x-ray reflectivity revealed that the oxide grown at 900 °C has rougher interface than that grown at 1000 °C. The role of interface roughness can be understood in a model composed of phonons and interface roughness. An external quantum efficiency of approximately 10-6 was obtained using Al electrodes. |
URI: | http://ntur.lib.ntu.edu.tw//handle/246246/145911 http://ntur.lib.ntu.edu.tw/bitstream/246246/145911/1/19.pdf https://www.scopus.com/inward/record.uri?eid=2-s2.0-0034504101&doi=10.1109%2f55.887479&partnerID=40&md5=27ba6452516a21c505a185170dc5b817 |
ISSN: | 07413106 | DOI: | 10.1109/55.887479 | SDG/關鍵字: | Carrier mobility; Diodes; Electrodes; Electron tunneling; Light emitting diodes; MOS devices; Photolithography; Quantum efficiency; Silicon; Surface roughness; Metal oxide silicon diodes; Electroluminescence |
顯示於: | 電機工程學系 |
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