https://scholars.lib.ntu.edu.tw/handle/123456789/155609
標題: | Room-Temperature Electroluminescence from Metal-Oxide-Silicon-Tunneling Diodes on (110) Substrates | 作者: | CHEE-WEE LIU Lee, Min-Hung Chang, Shu-Tong MIIN-JANG CHEN CHING-FUH LIN |
公開日期: | 2000 | 卷: | 39 | 期: | 10 B | 起(迄)頁: | L1016-L1018 | 來源出版物: | Japanese journal of applied physics | 摘要: | We report the band-edge electroluminescence at room temperature from metal-oxide-silicon tunneling diodes on (110) substrates. An electron-hole plasma recombination model can be used to fit the emission line shape. The reliability of this electroluminescence is studied and the emission intensity varies within 10% during a 2.5 × 104 C/cm2 stress. A comprehensive illustration composed of localized holes, phonons, and interface roughness is given to describe the radiative process. The picture can be used to explain the enhanced electroluminescence intensity, as compared to photoluminescence, and can be used to understand the substrate orientation effect on electroluminescence intensity. |
URI: | http://ntur.lib.ntu.edu.tw//handle/246246/145919 http://ntur.lib.ntu.edu.tw/bitstream/246246/145919/1/27.pdf https://www.scopus.com/inward/record.uri?eid=2-s2.0-0034292051&doi=10.1143%2fjjap.39.l1016&partnerID=40&md5=55ce6929a575227033ef9daa949ea6a4 |
ISSN: | 00214922 | DOI: | 10.1143/jjap.39.l1016 | SDG/關鍵字: | Electroluminescence; Electrons; Infrared radiation; Interfaces (materials); Mathematical models; MOS devices; Phonons; Photoluminescence; Substrates; Surface roughness; Temperature; Band edge emission; Electron hole plasma recombination model; Interface roughness; Tunnel diodes |
顯示於: | 電機工程學系 |
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