https://scholars.lib.ntu.edu.tw/handle/123456789/155681
標題: | High current gain AlGaAs/GaAs heterojunction bipolar transistor grown by molecular beam epitaxy | 作者: | Huang, Chen-Chih Lin, Hao-Hsiung |
公開日期: | 1993 | 卷: | 36 | 期: | 2 | 起(迄)頁: | 197-200 | 來源出版物: | Solid-State Electronics | 摘要: | The fabrication and characteristics of Npn AlGaAs/GaAs single heterojunction bipolar transistors (HBTs) with an emitter edge-thinning structure have been studied. A new and simple selective wet etching method was used to make the emitter edge-thinning structure. The best device obtained shows a common emitter differential current gain of 8700. To our knowledge, this is the highest current gain of AlGaAs/GaAs HBT grown by MBE reported to date. The Gummel plot of this device is analyzed and compared with another HBT which has no emitter edge-thinning structure and was fabricated on the same epiwafer. It is found that the base current of the emitter edge-thinning device is one-tenth smaller than that of the controlled device. In low current region, the effect of emitter edge-thinning structure is even more significant. Because of the reduction of 2-kT surface recombination current, the emitter edge-thinning device reveals its intrinsic 1-kT base current in high current region. © 1993. |
URI: | https://www.scopus.com/inward/record.uri?eid=2-s2.0-0027543803&doi=10.1016%2f0038-1101%2893%2990139-H&partnerID=40&md5=a88f43b7cfaf30e3776bd3c170faf129 | DOI: | 10.1016/0038-1101(93)90139-H | SDG/關鍵字: | Electric current measurement; Fabrication; Heterojunctions; Molecular beam epitaxy; Semiconducting aluminum compounds; Semiconducting gallium arsenide; Base current; Common emitter differential current gain; Emitter edge-thinning structure; Gummel plot; High current gain HBTs; Surface recombination current; Bipolar transistors |
顯示於: | 電機工程學系 |
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