https://scholars.lib.ntu.edu.tw/handle/123456789/155708
標題: | Structural and optical properties of 0.98 μm InGaAs/InGaAsP strained-compensated multiple quantum well structures grown by gas-source molecular beam epitaxy | 作者: | Liu, Jin-Shung Wang, Jyh-Shyang Hsieh, K. Y. Lin, Hao-Hsiung |
公開日期: | 1999 | 期: | 206 | 起(迄)頁: | 15-22 | 來源出版物: | Journal of Crystal Growth | 摘要: | The effects of growth temperature on the structural and optical properties of gas-source molecular beam epitaxy grown 0.98 μm InGaAs/InGaAsP strain-compensated multiple quantum well structures were studied by transmission electron microscopy (TEM), double crystal X-ray diffraction and photoluminescence measurements. It was found that high quality of quantum well structures can be obtained at a lower growth temperature. A higher growth temperature caused an immiscible growth for the InGaAsP alloy from the observation of the TEM images. As a result, the optical and structural quality of the quantum well structure was drastically degraded. |
URI: | https://www.scopus.com/inward/record.uri?eid=2-s2.0-0033207498&doi=10.1016%2fS0022-0248%2899%2900317-6&partnerID=40&md5=5eb0e081ecb4df971738da98f14ed4c6 | DOI: | 10.1016/S0022-0248(99)00317-6 | SDG/關鍵字: | Crystal structure; Molecular beam epitaxy; Photoluminescence; Semiconducting indium gallium arsenide; Semiconductor growth; Thermal effects; Transmission electron microscopy; X ray diffraction analysis; Gas source molecular beam epitaxy; Growth temperature; Photoluminescence measurement; Semiconductor quantum wells |
顯示於: | 電機工程學系 |
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