https://scholars.lib.ntu.edu.tw/handle/123456789/155724
標題: | Cubic GaN grown on (0 0 1) GaAs substrate by RF plasma assisted gas source MBE | 作者: | Sung, Li-Wei Lin, Hao-Hsiung Chia, Chih-Ta |
關鍵字: | A1. Crystal structures; A1. Growth models; A3. Molecular beam epitaxy; B1. Nitrides; B2. Semiconducting gallium compounds | 公開日期: | 2002 | 卷: | 241 | 期: | 3 | 起(迄)頁: | 320-324 | 來源出版物: | Journal of Crystal Growth | 摘要: | Cubic GaN films have been grown on (0 0 1) GaAs substrates by using RF plasma assisted gas source MBE. The cubic GaN films were deposited at different Ga-flux to N-flux ratios that were determined by deposition rates directly. Three growth regimes are defined in the cubic GaN growth diagram. The optical quality of these films was measured by photoluminescence (PL). Micro-Raman scattering was performed to analyze the crystallization of the films. The optimal flux ratio for cubic GaN grown at Ts = 720°C is on the boundary between intermediate Ga stable regime and Ga droplet regime. © 2002 Elsevier Science B.V. All rights reserved. |
URI: | https://www.scopus.com/inward/record.uri?eid=2-s2.0-0036606618&doi=10.1016%2fS0022-0248%2802%2901289-7&partnerID=40&md5=10bbdd3dc261aebcebfa2ba636136eed | DOI: | 10.1016/S0022-0248(02)01289-7 | SDG/關鍵字: | Chemical vapor deposition; Crystal lattices; Crystallization; Film growth; Molecular beam epitaxy; Photoluminescence; Raman scattering; Semiconducting gallium arsenide; Thermal effects; Thin films; Optical quality; Gallium nitride |
顯示於: | 電機工程學系 |
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