https://scholars.lib.ntu.edu.tw/handle/123456789/155734
Title: | Highly-strained 1.24-μm InGaAs/GaAs quantum-well lasers | Authors: | Sung, L.W. HAO-HSIUNG LIN |
Issue Date: | 2003 | Journal Volume: | 83 | Journal Issue: | 6 | Start page/Pages: | 1107-1109 | Source: | Applied Physics Letters | Abstract: | A study was performed on highly strained 1.24-μm InGaAs/GaAs quantum-well lasers. It was shown that the threshold current density was 405 A/cm2 for an as-cleaved diode laser with 873-μm cavity length. The results showed that the internal quantum efficiency and laser cavity loss were 93% and 6.4 cm-1, respectively. |
URI: | hhttps://www.scopus.com/inward/record.uri?eid=2-s2.0-0041924981&doi=10.1063%2f1.1600504&partnerID=40&md5=048bb32ac10a4003a6b264744ffbddbd | DOI: | 10.1063/1.1600504 | SDG/Keyword: | Current density; Photoluminescence; Quantum efficiency; Semiconducting indium gallium arsenide; Emission wavelengths; Quantum well lasers |
Appears in Collections: | 電機工程學系 |
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