https://scholars.lib.ntu.edu.tw/handle/123456789/155868
標題: | Electroluminescence at Si band gap energy based on metal–oxide–silicon structures | 作者: | CHING-FUH LIN CHEE-WEE LIU MIIN-JANG CHEN Lee, M. H. Lin, I. C. |
公開日期: | 2000 | 卷: | 87 | 期: | 12 | 起(迄)頁: | 8793-8795 | 來源出版物: | Journal of Applied Physics | 摘要: | Room-temperature electroluminescence corresponding to Si band gap energy from metal-oxide-semiconductor structures on both p-type and n-type Si is observed. With very thin oxide grown by rapid thermal oxidation, the metal-oxide-semiconductor structures behave like light emitting diodes. Luminescence is observed under forward bias even with a current density as low as 0.67 A/cm2. The physical reason for the electroluminescence is discussed and attributed to the localized wave function that leads to the spread of momentum. As a result, the spread momentum causes the electron-hole radiative recombination to occur relatively easily. © 2000 American Institute of Physics. |
URI: | http://ntur.lib.ntu.edu.tw//handle/246246/148149 https://www.scopus.com/inward/record.uri?eid=2-s2.0-0001218210&doi=10.1063%2f1.373612&partnerID=40&md5=93a0ec24c3b897f438812dd756d2f9fb |
ISSN: | 00218979 | DOI: | 8793-8795 |
顯示於: | 電機工程學系 |
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