https://scholars.lib.ntu.edu.tw/handle/123456789/173503
標題: | 奈米結構光電元件之研究— 總計畫 | 作者: | 林浩雄 | 關鍵字: | 分子束磊晶;含銻化合物半導體;銻砷化鎵量子井;矽鍺量子點;砷化銦鎵量 子點雷射;molecular beam epitaxy;Sb-based compound semiconductor;GaAsSb quantum well;Ge quantum dot;InGaAs quantum dot laser diode | 公開日期: | 31-七月-2002 | 出版社: | 臺北市:國立臺灣大學電子工程學研究所 | 摘要: | 本計畫包括下面三項重要的奈米結構光電元件技術的發展研究。茲分敘其重要的研 究結果如下:(1)以固態源分子束磊晶機在砷化鎵基板上成長銻砷化鎵/砷化鎵量子井和 在銻砷化鎵/砷化鎵量子井方面,所成長的銻砷化鎵/砷化鎵多層量子井寬面積雷射結構 在室溫光激螢光譜波長為1.27μm,半寬為67meV。並且成功製作出在室溫下起振的銻砷 化鎵/砷化鎵量子井雷射,放光波長在1.26μm,其起振電流密度低達201A/cm2。(2) 研究 矽鍺自形成量子點(SAQD) 成長及形狀相變的機制。製造了原型之鍺量子點紅外線偵測 元件。其偵測波段位於2-4μm,並且無正向入射偵測之間的問題。(3)在量子點方面,我 們成長出砷化銦/砷化銦鎵量子點,密度約2.3×1010cm-2,室溫光激螢光譜波長為 1.282μm;並且製作出在室溫起振的多層量子點寬面積雷射二極體,其放光波長在 1.18μm。我們同時也量測了量子點雷射二極體的頻寬,並進行動態特性的模擬。 This project has three subprojects. In the first subproject, we study the molecular beam epitaxial growth of Sb-based materials and devices that have been gradually drawing attention in high-speed electronics and optoelectronics. The growth conditions for GaAsSb/GaAs heterojunctions were investigated. A semi-empirical incorporation model for Sb and As was developed for precious composition control. Based on the results from growth condition optimization, we have successfully fabricated a type II GaAsSb/GaAs quantum well laser diode on GaAs substrate. The device demonstrates an emission wavelength of 1.26 mm and a threshold current density as low as 201A/cm2 at room temperature. In the second subproject, the evolution of self-assembled Ge quantum dots is studied. Understanding and controlling the growth of self-assembled strained semiconductor quantum dot (SAQD) is critical in realizing the application potential based on such nanostructure. In particular, the metastability of SAQD needs to be clarified. Here we conduct quantitative analysis on the shape evolution of Ge SAQDs grown on Si(100). It is found that the Ge SAQDs evolve from pyramid to dome shape beyond a critical volume Vc. However, coexistence of both island shapes in the neighbourhood of Vc is evident, indicating the shape may be trapped by a metastability. This metastability of island can be explained as a first-order phase transition, similar to the supercooling of water. With a model incorporating both the strain energy gain and the surface energy cost, an energy barrier for the shape transition ~3meV per atom is estimated. At the same time, the volume range of metastability can be predicted and compared with the experimental finding. Our analysis should be equally applicable to other systems such as III-V quantum dots(e.g. InAs/GaAs(100)). In the third subproject, InGaAs/GaAs QDs are grown and Fabry-Perot QD laser diodes are fabricated. At room temperature, long-wavelength lasing at 1.19 mm from QDs is demonstrated. The threshold current density from an 8´1200 mm stripe laser diode is below 500 A/cm2. The emission wavelength from the QD ground state is around 1.28 mm, not far from the target wavelength of 1.3mm which is of important application in fiber communication systems. |
URI: | http://ntur.lib.ntu.edu.tw//handle/246246/19974 | 其他識別: | 902215E002035 | Rights: | 國立臺灣大學電子工程學研究所 |
顯示於: | 電子工程學研究所 |
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902215E002035.pdf | 247.18 kB | Adobe PDF | 檢視/開啟 |
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