https://scholars.lib.ntu.edu.tw/handle/123456789/173645| Title: | An Analysis of Base Bias Current Effect on SiGe HBTs | Authors: | Lin, Yo-Sheng Lu, Shey-Shi |
Issue Date: | 2005 | Journal Volume: | 52 | Journal Issue: | 1 | Start page/Pages: | 132-136 | Source: | IEEE Transactions on Electron Devices | URI: | http://www.scopus.com/inward/record.url?eid=2-s2.0-12344257975&partnerID=MN8TOARS http://scholars.lib.ntu.edu.tw/handle/123456789/316523 http://ntur.lib.ntu.edu.tw/bitstream/246246/20060927122739789644/1/01372722.pdf |
DOI: | 10.1109/TED.2004.841347 |
| Appears in Collections: | 電子工程學研究所 |
| File | Description | Size | Format | |
|---|---|---|---|---|
| 01372722.pdf | 345.19 kB | Adobe PDF | View/Open |
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