https://scholars.lib.ntu.edu.tw/handle/123456789/173653
標題: | The comparison of isolation technologies and device models on SiGe bipolar low noise amplifier | 作者: | Hua, W.C. Yang, T.Y. Liu, C.W. |
關鍵字: | SiGe;Low noise amplifier;Deep trench isolation;Junction isolation;Mextram 504 | 公開日期: | 2004 | 起(迄)頁: | 425-428 | 來源出版物: | Applied Surface Science 224 | 摘要: | Junction isolation is promising for cost reduction & high power circuit applications due to its relatively lower fabrication complexity & thermal conductivity, but larger area & collector-substrate capacitance (Ccs) seem drawbacks as compared to the deep trench isolation (DTI) technology. A simulation work is proposed for the size selection guide of unit cell to have the low cost benefit of junction isolation without sacrificing the gain & noise performance of the low noise amplifier (LNA) operated at 5.2 GHz. |
URI: | http://ntur.lib.ntu.edu.tw//handle/246246/2006111501233450 | 其他識別: | 246246/2006111501233450 |
顯示於: | 電子工程學研究所 |
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