|Title:||A 78–114 GHz Monolithic Subharmonically Pumped GaAs-Based HEMT Diode Mixer||Authors:||Hwang, Yuh-Jing
Sinclair, Malcolm W.
Gough, Russell G.
|Keywords:||MMIC;millimeter-wave mixer||Issue Date:||Jun-2002||Publisher:||Taipei:National Taiwan University Dept Chem Engn||Journal Volume:||VOL. 12||Journal Issue:||NO. 6||Start page/Pages:||-||Source:||IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS||Abstract:||
A W-band subharmonically pumped (SHP) diode
mixer is designed for fixed LO frequency operation. It is fabricated
on a 4-mil substrate using 0.15 m GaAs PHEMT MMIC process.
The on-wafer measurement results show that the conversion loss
is about 10 to 14 dB across the W band, as a 10 dBm 48 GHz LO
signal is pumped. To our knowledge, this is the state-of-the-art
result on low-conversion-loss wideband MMIC SHP diode mixer.
The packaged module measurement shows a similar result.
Both the simulation and measurement results are shown in good
|Appears in Collections:||化學系|
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